Untitled
Abstract: No abstract text available
Text: ADVANCE M in P n M I - MT4LC16270 256K X 16 DRAM DRAM 256K x 16 DRAM 3.3V EDO PAGE MODE FEATURES • Single +3.3V ±0.3V power supply* • Industry-standard xl6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Low power, 0.3mW standby; 165mW active, typical
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MT4LC16270
165mW
512-cycle
CYCLE24
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PDF
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precon ten
Abstract: No abstract text available
Text: PRELIMINARY 1 MEG x 4 DRAM DRAM 3.3V EDO PAGE MODE, OPTIONAL SELF REFRESH FEATURES • • • • • • • • • • PIN ASSIGNMENT Top View Single +3.3V ±0.3V power supply Low power, 250|iW standby; lOOmW active, typical JEDEC-standard pinout and packages
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OCR Scan
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MT4LC4007J
024-cycle
128ms
25-35ns
20/26-Pin
CYCLE24
precon ten
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PDF
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c2m6b
Abstract: 4lc2m8
Text: MT4LC2M8B1 L 2 MEG X 8 DRAM fU IIC R O N DRAM 2 MEG x 8 DRAM 3.3V, FAST PAGE MODE, OPTIONAL EXTENDED REFRESH FEATURES PIN ASSIGNMENT (Top View) • JE D E C - and in d u stry -sta n d a rd x8 p in o u ts, tim in g , • • OPTIONS 28-Pin 300 mil SOJ (DA-3)
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048-cy
28-Pin
MT4LC2M88KL.
c2m6b
4lc2m8
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY 4 MEG x 4 DRAM DRAM 3.3V, EDO PAGE MODE, OPTIONAL SELF REFRESH FEATURES PIN ASSIGNMENT Top View • Industry-standard x4 pinout, timing, functions and packages • High-performance CM OS silicon-gate process • Single +3.3V ±0.3V power supply
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OCR Scan
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150mW
048-cycle
24/26-Pin
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT4LC1M16C3 S 1 MEG X 16 DRAM M IC R O N I SEMICONDUCTOR ÍMC DRAM 1 M E G x 1 6 DRAM 3.3V FAST PAGE MODE, OPTIONAL SELF REFRESH • JEDEC- and industry-standard xl6 timing, functions, pinouts and packages • High-performance CMOS silicon-gate process
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OCR Scan
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MT4LC1M16C3
024-cycle
225mW
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT4LC4M16N3/R6 4 MEG X 16 DRAM l^ iic n g N 4 M E G X 16 D R A M S DRAM 3.3V, EDO PAGE MODE PIN ASSIGNMENT Top View • Single +3.3V +0.3V power supply • Industry-standard x l6 pinout, timing, functions and package • 13 row-addresses, 9 column-addresses (N3) or
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OCR Scan
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MT4LC4M16N3/R6
096-cycle
50-Pin
C4M16N3/R6
0D1334Ã
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE M in S Q M I MT4LC8M8EÎ/B& S MEG X 8 DRAM 8 MEG X 8 DRAM DRAM 3.3V FAST PAGE MODE FEATURES • Single +3.3V ±0.3V power supply • Industry-standard x8 pinout, timing, functions and packages • 13 row-addresses, 10 column-addresses El or 12 row-addresses, 11 column-addresses (B6)
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096-cycle
MT4lCaMtE1/86
DD11213
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE MICRON ^ MT4LC8M8P4/C2 MEG X 8 DRAM - 8 8 MEG x 8 DRAM DRAM 3.3V, EDO PAGE MODE FEATURES PIN ASSIGNMENT Top View • Sin g le + 3 .3 V ± 0 .3 V p o w er su p p ly • In d u stry-stan d ard x8 p in o u t, tim in g , fu n ctio n s and p ackages • 13 row -ad d resses, 10 co lu m n -a d d resse s (P 4) or
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096-cy
32-Pin
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY |U 1IC R O N M T4LC 2M 8E 7 S 2 MEG X 8 DRAM DRAM 2 MEG x 8 DRAM FEATURES PIN ASSIGNMENT (Top View) • Industry-standard x8 pinout, tim ing, functions and packages • High-perform ance CM OS silicon-gate process • Single +3.3V ±0.3V power supply
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150mW
048-cycle
28-Pin
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PDF
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Untitled
Abstract: No abstract text available
Text: ni CR ON S E M I C O N D U C T O R IN b3E D • b l l l S M T DDafibìfl flfl? ■ I1RN PRELIMINARY MT4LC4M4A1/B1 S 4 MEG X 4 DRAM MICRON ■ StVlCG KO^CTO aiNC DRAM 4 MEG x 4 DRAM 3.3V FAST-PAGE-MODE, OPTIONAL SELF REFRESH FEATURES • JEDEC and industry-standard x4 pinout, timing,
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300mW
048-cycle
096-cycle
A0-A11
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PDF
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MT4LC4M4G6
Abstract: No abstract text available
Text: PRELIMINARY MT4LC4M4G6 4 MEG x 4 BURST EDO DRAM 4 MEG x 4 BURST EDO DRAM FEATURES PIN ASSIGNMENT Top View • Burst order, interleave or linear, program m ed by executing WCBR cycle after initialization • Single pow er supply: +3.3V ±5% • All inputs a n d o u tp u ts are LVTTL com patible w ith 5V
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OCR Scan
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048-cycle
24/26-Pin
MT4LC4M4G6
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT4LC8M8E1/B6 MEG X 8 DRAM |U |I C = R O N 8 DRAM 8 MEG X 8 DRAM 3.3V, FAST PAGE MODE FEATURES • Single +3.3V +0.3V power supply • Industry-standard x8 pinout, timing, functions and packages • 13 row-addresses, 10 column-addresses El or 12 row-addresses, 11 column-addresses (B6)
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OCR Scan
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096-cycle
32-Pin
MT4LC8M8E1/56
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PDF
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Untitled
Abstract: No abstract text available
Text: MT4LC4M4E8 L 4 MEG X 4 DRAM |V|IC=RON 4 MEG x 4 DRAM DRAM 3.3V, EDO PAGE MODE, OPTIONAL EXTENDED REFRESH PIN ASSIGNMENT (Top View) • Industry-standard x4 pinout, timing, functions and packages • High-performance CMOS silicon-gate process • Single +3.3V ±0.3V power supply
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150mW
048-cycle
0Q13B3S
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE DRAM 8 MEG x 8 3.3V, BURST EDO FEATURES PIN ASSIGNMENT Top View • B u rst ord er, in terlea v e o r linear, p ro g ram m ed by execu tin g W C B R cycle after initialization • Sin g le + 3 .3 V ± 5 % p o w er su p p ly OPTIONS -52 -60 • P ack ages
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MT41C
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PDF
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MT4LC4M4G6
Abstract: No abstract text available
Text: PRELIMINARY MT4LC4IW4GS 4 M EG x4 BURSTEDO DRAM 4 MEG x 4 BURST EDO DRAM FEATURES PIN ASSIGNMENT Top View • Burst order, interleave or linear, programmed by executing WCBR cycle after initialization • Single power supply: +3.3V ±5% • All inputs and outputs are LVTTL compatible with 5V
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OCR Scan
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048-cycle
26-Pin
000xBwhere
MT4LC4M4G6
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PDF
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Untitled
Abstract: No abstract text available
Text: MT4LC2M8E7 S 2 MEG x 8 DRAM MICRON I TECHNOLOGY, M C. DRAM 2 MEG x 8 DRAM 3.3V, EDO PAGE MODE, OPTIONAL SELF REFRESH FEATURES PIN ASSIGNMENT (Top View) 28-Pin SOJ 28-Pin SOJ • Industry-standard x8 pinout, timing, functions and packages • High-performance CMOS silicon-gate process
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OCR Scan
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28-Pin
165mW
048-cycle
bill541
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PDF
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Untitled
Abstract: No abstract text available
Text: MT4LC2M8B1 S 2 MEG X 8 DRAM MICRON I TECHNOLOGY. INC DRAM 2 MEG x 8 DRAM 3.3V, FAST PAGE MODE, OPTIONAL SELF REFRESH PIN ASSIGNMENT (Top View) • JEDEC- and industry-standard x8 pinouts, tim ing, functions a n d packages • H igh-perform ance CMOS silicon-gate process
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OCR Scan
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200mW
048-cycle
28-Pin
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY V lIC R O r V ! 1 MT4LC4007J(S MEG X 4 DRAM 1 MEG x 4 DRAM DRAM FEATURES • • • • • • • • • • Single +3.3V ±0.3V power supply Low power, 0.25m W standby; 115mW active, typical JEDEC-standard pinout and packages High-perform ance CM OS silicon-gate process
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OCR Scan
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MT4LC4007J
115mW
024-cycle
128ms
25-35ns
20/26-Pin
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PDF
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Untitled
Abstract: No abstract text available
Text: M T4LC 4M 4G 6 4 MEG x 4 B U RST EDO DRAM DRAM 4 MEG x 4 3.3V, BURST EDO FEATURES • • • • • • • • OPTIONS 24/26-Pin SOJ D A -2 DJ • R e fresh S ta n d a r d (2,048 c y c le s at 3 2 m s) N one P art N u m b e r E x a m p le : M T 4 L C 4 M 4 G 6 D J-5 2
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OCR Scan
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048-cycle
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PDF
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