Untitled
Abstract: No abstract text available
Text: ADVANCE IC R O IM 512K WIDE DRAM X MT4C8512/3 S 8 WIDE DRAM 512K x 8 DRAM FEATURES • Industry-standard x8 pinouts, timing, functions and packages • Address entry: ten row-addresses, nine columnaddresses • High-performance CMOS silicon-gate process • Single +5V ±10% power supply
|
OCR Scan
|
PDF
|
MT4C8512/3
MT4C8513
024-cycle
128ms
350mW
28-Pin
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY M IC R O N 512K WIDE DRAM MT4C8512/3 L WIDE DRAM X 8 512K x 8 DRAM FEATURES PIN ASSIGNMENT Top View • Industry-standard x8 pinouts, timing, functions and packages • Address entry: ten row-addresses, nine columnaddresses • High-perform ance CM OS silicon-gate process
|
OCR Scan
|
PDF
|
MT4C8512/3
MT4C8513
024-cycle
128ms
350mW
28-Pin
MT4C8512/3L
Z1993.
T4C8512/3
|
Untitled
Abstract: No abstract text available
Text: blllSM'ì 0004371 2E2 B U R N SSE D MICRON TECHNOLOGY INC ADVANCE ic n o N MT4C8512/3 5 1 2 K x 8 DRAM DRAM 512K x 8 DRAM FAST PAGE M O D E • Industry standard x8 pinouts, timing, functions and packages • Address entry: 10 row addresses, nine column addresses
|
OCR Scan
|
PDF
|
MT4C8512/3
350mW
024-cycle
MT4C8513
28-Pin
blllS41
|
BCM 6302
Abstract: micron MT4C database for 4081 ic
Text: OBSOLETE MARCH 1995 D18A 512K X 8, 256K x 16 D R A M D IE I^IICRON 512Kx 8, 256Kx 16 DRAM DRAM DIE MT4C8512D18A and MT4C16257D18A G EN ERAL PHYSICAL SPECIFICATIONS • Wafer thickness =18.5 mils ±0.5 mils. • The backside wafer surface Is polished bare silicon.
|
OCR Scan
|
PDF
|
114x114
512Kx
256Kx
MT4C8512D18A
MT4C16257D18A
150mm
BCM 6302
micron MT4C
database for 4081 ic
|
Untitled
Abstract: No abstract text available
Text: SPR i 1993 PRELIMINARY MICRON • 512K X SEMICONDUCTOR MC WIDE DRAM MT4C8512/3 L WIDE DRAM 8 512K x 8 DRAM LOW POWER, EXTENDED REFRESH FEATURES • Industry-standard x8 pinouts, timing, functions and packages • Address entry: ten row-addresses, nine columnaddresses
|
OCR Scan
|
PDF
|
MT4C8512/3
MT4C8513
024-cycle
128ms
350mW
28-Pin
S12/3L
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY MT4C8512/3 5 1 2 K x 8 WIDE DRAM |U|IC=RON 512K WIDE DRAM X 8 DRAM WIDE DRAM FAST-PAGE-MODE FEATURES PIN ASSIGNMENT Top View • Industry-standard x8 pinouts, tim ing, functions and packages • Address entry: ten row-addresses, nine columnaddresses
|
OCR Scan
|
PDF
|
MT4C8512/3
024-cycle
MT4C8513
28-Pin
DQ2512/3
|
MT4C8512
Abstract: ITE 8512 MT4CB512
Text: M IC R O N 512K DRAM MT4C8512 X 8 DRAM 512K x 8 DRAM FAST PAGE MODE FEATURES • Industry-standard x8 pinouts, tim ing, functions and packages • Address entry: ten row-addresses, nine colurnnaddresses • High-perform ance CM OS silicon-gate process • S in g le + 5 V ±10% power supply*
|
OCR Scan
|
PDF
|
MT4C8512
024-cycle
28-Pin
Q1994,
ITE 8512
MT4CB512
|
Untitled
Abstract: No abstract text available
Text: MICRO N T E C H N O L O G Y INC b l l l S H I D D D 4 36 S Ö17 • URN 55E D ADVANCE MT4C8512/3 L 512K X 8 DF5AM MICRON 512K x 8 DRAM LOW POWER, EXTENDED REFRESH FEATURES • Industry standard x8 pinouts, timing, functions and packages • Address entry: 10 row addresses, nine column
|
OCR Scan
|
PDF
|
MT4C8512/3
MT4C8513
024-cycle
128ms
350mW
MT4C8512/3L
|
Untitled
Abstract: No abstract text available
Text: niCRON S E M I C O N D U C T O R INC L3E D • b 1 1 1 5 14^ 0 0 0 7 71 S ATI ■ URN ADVANCE MICRON ■ 512K SEMICONDUCTOR. INC. WIDE DRAM X MT4C8512/3S 8 WIDE DRAM 512K x 8 DRAM FEATURES • Industry-standard x8 pinouts, timing, functions and packages • Address entry: ten row-addresses, nine columnaddresses
|
OCR Scan
|
PDF
|
MT4C8512/3S
MT4C8513
024-cycle
128ms
MT4C8512/3
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY M IC R O N 512K WIDE DRAM MT4C8512/3 L WIDE DRAM X 8 512K x 8 DRAM LOW POWER, EXTENDED REFRESH FEATURES PIN ASSIGNMENT Top View OPTIONS • M ASKED W RITE Not available Available • Packages Plastic SOJ (400 mil) Plastic TSOP (400 mil) Plastic ZIP (375 mil)
|
OCR Scan
|
PDF
|
MT4C8512/3
28-Pin
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY MICRON I MT4C8512/3 512K X 8 WIDE DRAM •CmCOMOUCTCM. WC WIDE DRAM 512K X 8 DRAM FAST-PAGE-MODE FEATURES PIN ASSIGNMENT Top View • In d ustry-stand ard x 8 pinouts, tim ing, functions and • • • • • • • • • p ackages A d d ress entry: ten row -addresses, nine colum nad dresses
|
OCR Scan
|
PDF
|
MT4C8512/3
024-cycle
28-Pierves
C1993
|
Untitled
Abstract: No abstract text available
Text: M IC R O N • 512K X U M ic o N o u c rio n . « e WIDE DRAM MT4C8512/3 L WIDE DRAM 8 512K x 8DRAM LOW POWER, EXTENDED REFRESH FEATURES • Industry-standard x8 pinouts, tim ing, functions and packages • Address entry: ten row-addresses, nine columriaddresses
|
OCR Scan
|
PDF
|
MT4C8512/3
MT4C8513
024-cycle
128ms
28-Pin
|
Untitled
Abstract: No abstract text available
Text: JUl i fi 1993 MICRON I MT4C8512/3 L 512K X 8 WIDE DRAM SEMICONDUCTOR. ML WIDE DRAM 512K x 8 DRAM LOW POWER, EXTENDED REFRESH FEATURES • Industry-standard x8 pinouts, timing, functions and packages • Address entry: ten row-addresses, nine columnaddresses
|
OCR Scan
|
PDF
|
MT4C8512/3
MT4C8513
024-cyde
128ms
350mW
12StiS
MT4C8512/3
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY M IC R O N 512K WIDE DRAM 512K X 8 X 8 MT4C8512/3 WIDE DRAM DRAM FAST-PAGE-MODE FEATURES • Industry-standard x8 pinouts, timing, functions and packages • Address entry: ten row-addresses, nine columnaddresses • High-performance CMOS silicon-gate process
|
OCR Scan
|
PDF
|
MT4C8512/3
350mW
024-cycle
MT4C8513
28-Pin
|
|
|
MT4C8512
Abstract: No abstract text available
Text: " j r ."' i 8 * 9 3 MT4C8512/3 512K x 8 WIDE DRAM MICRON B S tM lC O H O U C T O R INC WIDE DRAM 512K x 8 DRAM FAST-PAGE-MODE FEATURES • Industry-standard x8 pinouts, timing, functions and packages • Address entry: ten row-addresses, nine columnaddresses
|
OCR Scan
|
PDF
|
MT4C8512/3
024-cycle
MT4C8513
C1993.
MT4C8512
|
Untitled
Abstract: No abstract text available
Text: MICRON SEMICONDUCTOR INC b?E D • b 1 1 1 5 MT 000^7=57 711 ■ MRN OBSOLETE JUNE 94 D18A 512K X 8, 256K X 16 DRAM DIE M IC R O N B SEMiCONO'JCTOa INC. 512Kx8, 256Kx16 DRAM DRAM DIE MT4C8512D18A and MT4C16257D18A GENERAL PHYSICAL SPECIFICATIONS • • •
|
OCR Scan
|
PDF
|
114x114
512Kx8,
256Kx16
MT4C8512D18A
MT4C16257D18A
150mm
|
Untitled
Abstract: No abstract text available
Text: MICRON SE M I C ON DU C TO R INC b3E D • blllSHR DDGfibD? 7 3 e! * M R N MICRQN I M T 4 C 8 5 1 2 /3 5 1 2 K X 8 W ID E D R A M SEBICO M O UCTO Rinc WIDE DRAM 512K X 8 DRAM FAST-PAGE-MODE FEATURES PIN ASSIGNMENT Top View • Industry-standard x8 pinouts, timing, functions and
|
OCR Scan
|
PDF
|
024-cycle
C19S3.
MT4C8512/3
MT4CIS12/3
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY M IC R O N 512K X 8 M T 4 C 8 5 1 2/3 L W ID E D R A M 512K x 8 DRAM WIDE DRAM FEATURES • Industry-standard x8 pinouts, timing, functions and packages • Address entry: ten row-addresses, nine columnaddresses • High-performance CMOS silicon-gate process
|
OCR Scan
|
PDF
|
MT4C8513
024-cycle
128ms
350mW
MT4C8512/3
|
LM 8512
Abstract: T4C marking marking t4c
Text: ADVANCE M T4C 8512/3 S 512K x 8 W IDE DRAM M IC R O N WIDE DRAM 512K x 8 DRAM FEATURES PIN ASSIGNMENT Top View • Industry-standard x8 pinouts, timing, functions and packages • Address entry: ten row-addresses, nine columnaddresses • High-perform ance CM O S silicon-gate process
|
OCR Scan
|
PDF
|
MT4C8513
024-cycle
128ms
350mW
28-Pin
MT4C8512/3S
MT4C8512/3
LM 8512
T4C marking
marking t4c
|
ITE 8512
Abstract: ge 8513 M992 MT4CB512
Text: ADVANCE M T4C 85 12/3 L 512K X 8 DRAM |v iic = R a i\j 512K x 8 DRAM LOW POWER, EXTENDED REFRESH PIN ASSIGNMENT Top View • Ind ustry stand ard x8 p in o u ts, tim in g , fu n ctio n s and packages • A d d ress en try: 1Ü row ad d resses, n in e colu m n
|
OCR Scan
|
PDF
|
024-cycle
MT4C8512/3L
MT4C9512/34.
ITE 8512
ge 8513
M992
MT4CB512
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY |W|IC=RC3N 512K M T4C 8 512/3 L WIDE DRAM X 8 512K x 8 DRAM WIDE DRAM LOW POWER, EXTENDED REFRESH FEATURES PIN ASSIGNMENT Top View OPTIONS 28-Pin ZIP (DB-3) 28-Pin SOJ (DC-4) MARKING • Timing 60ns access 70ns access 80ns access • MASKED WRITE
|
OCR Scan
|
PDF
|
MT4C8513
024-cycle
128ms
350mW
28-Pin
MT4C8512/3
WT4C6512/3
S1993,
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY M IC R O N 512 K 512K WIDE DRAM X X M T4C851 2/3 8 W ID E D R A M 8 DRAM WIDE DRAM FAST-PAGE-MODE FEATURES PIN ASSIGNMENT Top View • Industry-standard x8 pinouts, timing, functions and packages • Address entry: ten row-addresses, nine columnaddresses
|
OCR Scan
|
PDF
|
T4C851
024-cycle
T4C8513
28-Pin
MT4C8512/3
|
MT42C4256Z
Abstract: No abstract text available
Text: l i f- V nib MICRON • 512K X MT20D51240 40 DRAM M O DULE 512K X 40 DRAM FAST PAGE MODE MT20D51240 LOW POWER, EXTENDED REFRESH (MT20D51240 L) FEATURES • • • • • • • • • 72-pin single-in-line package High-performance, CMOS silicon-gate process.
|
OCR Scan
|
PDF
|
MT20D51240
MT20D51240)
MT20D51240
72-pin
780mW
512-cyde
MT20D51240G
MT2D2568M
MT42C4256Z
|
Untitled
Abstract: No abstract text available
Text: ADVANCE WIDE DRAM 512K x 8 DRAM EXTENDED REFRESH SELF REFRESH FEATURES • Industry-standard x8 pinouts, timing, functions and packages • Address entry: ten row-addresses, nine columnaddresses • High-performance CMOS silicon-gate process • Single +5V ±10% power supply
|
OCR Scan
|
PDF
|
MT4C8513
024-cycle
128ms
350mW
28-Pin
CYCLE24
MT4C851Z/3S
|
