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    MT4LC400

    Abstract: No abstract text available
    Text: MT4LC4001 J S 1 MEG X 4 DRAM M IC R O N DRAM 1 MEG x 4 DRAM 3.3V, FAST PAGE MODE OPTIONAL SELF REFRESH PIN ASSIGNMENT (Top View) • Single +3.3V ±0.3V power supply • Low power, 0.3m W standby; lOOmW active, typical • Industry-standard x4 pinout, tim ing, functions and


    OCR Scan     		MT4LC4001 024-cycle 128ms 20/26-Pin MT4LC4001J MT4LC400 PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE MT4LC4001J S 1 MEG X 4 DRAM ICRGN 1 MEG X 4 DRAM DRAM 3.3V EXTENDED REFRESH SELF REFRESH FEATURES • Single +3.3V ±.3V power supply • Low power, 100|iW standby; 125mW active, typical • Industry-standard x4 pinout, timing, functions and packages


    OCR Scan     		MT4LC4001J 125mW 024-cycle 128ms PDF

    44c4001

    Abstract: No abstract text available
    Text: ADVANCE MICRON I MT4LC4001J S 1 RAM 1 MEG MEG X x 44 D DRAM SEMICSKUCTORMC DRAM 1 MEG x 4 DRAM 3.3V FAST-PAGE-MODE OPTIONAL SELF REFRESH FEATURES • Single+3.3V ±.3V power supply • Low power, 250^W standby; 150mW active, typical • Industry-standard x4 pinout, timing, functions and


    OCR Scan     		MT4LC4001J 150mW 024-cycle 128ms 44c4001 PDF

    Untitled

    Abstract: No abstract text available
    Text: MT4LC4001 J S 1 MEG X 4 DRAM MICRON • TECHNO! OGY. INC 1 MEG x 4 DRAM DRAM 3.3V, FAST PAGE MODE OPTIONAL SELF REFRESH PIN A SSIG N M EN T (Top View) • Single +3.3V +0.3V power supply • Low power, 0.3mW standby; lOOmW active, typical • Industry-standard x4 pinout, timing, functions and


    OCR Scan     		MT4LC4001 024-cycle 128ms 150jj 20/26-Pin PDF

    Untitled

    Abstract: No abstract text available
    Text: MT4LC4001 J S 1 MEG X 4 DRAM l^ iic n o N 1 MEG x 4 DRAM DRAM FEATURES • Single +3.3V + .3V pow er supply • Low power, 250nW standby; lOOmW active, typical • Industry-standard x4 pinout, timing, functions and packages • High-performance CMOS silicon-gate process


    OCR Scan     		MT4LC4001 250nW 024-cycle 128ms 20/26-Pin MT4LC4001JIS) MT4LC4001J PDF

    A817B

    Abstract: SOT23-5 marking MAV operational
    Text: ADVANCE MT4LC4001J S 1 MEG x 4 DRAM I^ IIC R O N DRAM 1 MEG x 4 DRAM 3.3V EXTENDED REFRESH SELF REFRESH FEATURES • Single +3.3V ±.3V power supply • Low power, 100|iW standby; 125mW active, typical • Industry-standard x4 pinout, tim ing, functions and


    OCR Scan     		MT4LC4001J 125mW 024-cycle 128ms 20-Pin CYCLE24 A817B SOT23-5 marking MAV operational PDF

    WT16LD

    Abstract: tc 97101 INTERNAL DIAGRAM OF IC 7476
    Text: PRELIMINARY M IC n a iM 1 M T 16LD T 164(S), M T16LD(T)464(X)(S) 1 MEG, 4 MEG X 64 DRAM M OD ULES 1 MEG, 4 MEG x 64 DRAM MODULE 8, 32 MEGABYTE, 3.3V, OPTIONAL SELF REFRESH, FAST PAGE OR EDO PAGE MODE FEATURES • JEDEC- and industry-standard pinout in a 168-pin,


    OCR Scan     		T16LD 168-pin, 024-cycle 128ms 048-cycle MT16LD WT16LD tc 97101 INTERNAL DIAGRAM OF IC 7476 PDF

    tc 97101

    Abstract: No abstract text available
    Text: ADVANCE |V |C = R O N 1 MEG DRAM MODULE X MT16LD T 164(S) 64 DRAM MODULE 1 MEG x 64 DRAM FEATURES • Industry-standard pinout in a 168-pin, dual read-out, single-in-line package • High-perform ance CM OS silicon-gate process • Single +3.3V +0.3V power supply


    OCR Scan     		MT16LD 168-pin, 024-cycle 128ms DE-24) DE-25) tc 97101 PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE M IC m n N 1 MT8LD T 132(X)(S), M T16LD(T)232(X)(S) 1 MEG, 2 MEG X 32 DRAM M ODULES DRAM 1 m e g , 2 MEG x 32 4, 8 MEGABYTE, 3.3V, OPTIONAL SELF M O D U L E m o d e ESH’ FAST PAGE ° R ED° PAGE FEATURES PIN ASSIGNMENT (Front View) OPTIONS Timing


    OCR Scan     		T16LD 72-pin 800mW 024-cycle 128ms MT16LD PDF

    4c4001jd

    Abstract: D-22A mt4m0
    Text: M I I C R O N D 22A 4 M E G D R A M D IE T DRAM DIE 4 MEG DRAM 1 MEG X 4, 4 M E G x 1 FEATURES • • • • Single 5.0V or 3.3V power supply Industry-standard timing and functions High-performance CMOS silicon-gate process All inputs, outputs and clocks are TTL- and CMOScompatible


    OCR Scan     		150mm C1V94, 4c4001jd D-22A mt4m0 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY lU ll^ c a n iM 1 — - MT8LD132 S , MT16LD232(S) 1 MEG, 2 MEG X 32 DRAM MODULE 1 MEG, 2 MEG x 32 DRAM MODULE 4, 8 MEGABYTE, 3.3V, FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES PIN ASSIGNMENT (Top View) OPTIONS 72-Pin SIMM (DE-7) 1 Meg x 32 (DE-8) 2 Meg x 32


    OCR Scan     		MT8LD132 MT16LD232 024-cy PDF

    D-22A

    Abstract: No abstract text available
    Text: MI CR ON S E M I C O N D U C T O R INC b^E ]> • b l l l S M T D G 1 D D 1 E 2ÖD ■ fIRN MICRON I D 22A 4 MEG DRAM DIE SEMICONDUCTOR IKC DRAM DIE 4 MEG DRAM 1 MEG X 4, 4 MEG x 1 FEATURES • • • • Single 5.0V or 3.3V power supply Industry-standard timing and functions


    OCR Scan     		150mm 354x182 D-22A PDF

    Untitled

    Abstract: No abstract text available
    Text: M T4LC 4001J S 1M EGX 4 D R A M MICRON I 1 1 MEG x 4 DRAM DRAM FEATURES • Single +3.3V ±.3V power supply • Low power, 250|xW standby; 100m W active, typical • Industry-standard x4 pinout, timing, functions and packages • High-performance CMOS silicon-gate process


    OCR Scan     		024-cyde 128ms MT4IC4001J 0D112b? MT4LC4001 CYCLE24 DD112b0 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MT8LD132 S , MT16LD232(S) 1 MEG, 2 MEG x 32 ORAM MODULE MICRON H SEMICONDUCTOR INC. 1 MEG, 2 MEG x 32 4, 8 MEGABYTE, 3.3V, FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES • In d u stry -stan d ard p in o u t in a 72-pin single-in-line package


    OCR Scan     		MT8LD132 MT16LD232 72-pin 024-cycle 128ms MT8LD132IS1. PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY M M Q N MT16LD T 164(S), MT16LD(T)464(X)(S) 1 MEG, 4 MEG X 64 DRAM MODULES I DRAM |y | 0 Q 18, 32MEG’ 4 MEG x 64 MEGABYTE, 3.3V, OPTIONAL SELF L £ REFF^ESH, FAST PAGE OR EDO PAGE FEATURES PIN ASSIGNMENT (Front View) 168-Pin DIMM • JEDEC- and industry-standard pinout in a 168-pin,


    OCR Scan     		MT16LD 168-Pin 168-pin, 024-cycle PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM DIE 4 MEG DRAM 1 MEG X 4, 4 MEG x 1 FEATURES Single 5.0V or 3.3V pow er supply Industry-standard timing and functions High-performance CMOS silicon-gate process All inputs, outputs and clocks are TTL- and CMOScompatible • Refresh modes: RAS ONLY, CAS-BEFORE-RAS CBR ,


    OCR Scan     		150mm Q011D01 PDF

    001245b

    Abstract: 16 MB Micron EDO SIMM Module PC25N
    Text: ADVANCE M IC R O N MT8LD T 132(X)(S), MT16LD(T)232(X)(S) -I MEG, 2 MEG X 32 DRAM MODULES • □ R Iv i O A M D U 1 m e g , 2 M E G x 3 2 4, 8 MEGABYTE, 3.3V, OPTIONAL SELF L E modeesh ’ fa st pa g e o r ed o pa g e FEATURES • JEDEC-standard pinout in a 72-pin single-in-line


    OCR Scan     		MT16LD 72-pin 800mW 024-cycle 128ms 001245b 16 MB Micron EDO SIMM Module PC25N PDF