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    N-CHANNEL 600 VOLTS Search Results

    N-CHANNEL 600 VOLTS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    N-CHANNEL 600 VOLTS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXTV18N60P

    Abstract: PLUS220SMD
    Text: IXTQ 18N60P IXTV 18N60P IXTV 18N60PS PolarHVTM Power MOSFET VDSS ID25 = 600 V = 18 A ≤ 400 mΩ Ω RDS on N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGS Continuous


    Original     		PDF 18N60P 18N60PS PLUS220 IXTV18N60P 2005IXYS IXTV18N60P PLUS220SMD

    41a 049

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET IXFB 82N60P VDSS = 600 V ID25 = 82 A Ω RDS on ≤ 75 mΩ ≤ 200 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		PDF 82N60P PLUS264TM 41a 049

    Amp. mosfet 1000 watt

    Abstract: SHD225608
    Text: SENSITRON SEMICONDUCTOR SHD225608 TECHNICAL DATA DATA SHEET 915, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 600 Volt, 20 Amp, 0.35 Ohm MOSFET œ Isolated and Hermetically Sealed MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT


    Original     		PDF SHD225608 250mA Amp. mosfet 1000 watt SHD225608

    Untitled

    Abstract: No abstract text available
    Text: SFF20N60M SFF20N60Z Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com DESIGNER’S DATA SHEET 20 AMP / 600 Volts Typ 0.30 Ω N-Channel POWER MOSFET Part Number / Ordering Information 1/


    Original     		PDF SFF20N60M SFF20N60Z SFF20N60 O-254 O-254Z MIL-PRF-19500. SFF20N60M; SFF20N60MDB;

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD218513 SHD218513A SHD218513B TECHNICAL DATA DATA SHEET 747, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 600 Volt, 0.60 Ohm, 11A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on œ Electrically Equivalent to IRFPC50


    Original     		PDF SHD218513 SHD218513A SHD218513B IRFPC50 1/W54)

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF 1N60A 1N60A QW-R502-091

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD218513 SHD218513A SHD218513B TECHNICAL DATA DATA SHEET 747, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 600 Volt, 0.60 Ohm, 11A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on œ Electrically Equivalent to IRFPC50


    Original     		PDF SHD218513 SHD218513A SHD218513B IRFPC50

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF 1N60A 1N60A QW-R502-091

    SMM70N10

    Abstract: SFF70N10M SFF70N10Z
    Text: SFF70N10M SFF70N10Z SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 70 AMP 600 VOLT 0.030Ω N-CHANNEL POWER MOSFET DESIGNER'S DATA SHEET FEATURES: • Rugged construction with poly silicon gate


    Original     		PDF SFF70N10M SFF70N10Z SMM70N10 O-254 O-254Z 125oC) SFF70N10M SFF70N10Z

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 MOSFET 2Amps, 600/650 Volts N-CHANNEL MOSFET 1 TO- 251 1 DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original     		PDF O-220 QW-R502-053

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF QW-R502-052

    14n60

    Abstract: 14N60P IXYS DS
    Text: PolarHVTM HiPerFET Power MOSFET ISOPLUS220TM VDSS = 600 V ID25 = 8 A Ω RDS on ≤ 630 mΩ ≤ 200 ns trr IXFC 14N60P (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings


    Original     		PDF ISOPLUS220TM 14N60P 02-27-06-C 14n60 14N60P IXYS DS

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET VDSS = 600 V ID25 = 15 A Ω RDS on ≤ 250 mΩ ≤ 250 ns trr IXFC 30N60P IXFR 30N60P Electrically Isolated Back Surface N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol Test Conditions Maximum Ratings


    Original     		PDF 30N60P

    10N60P

    Abstract: UA740
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFA 10N60P IXFP 10N60P VDSS = 600 V ID25 = 10 A Ω RDS on ≤ 740 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS


    Original     		PDF 10N60P 10N60P UA740

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF 10N60 10N60 10N60L QW-R502-119

    23N60

    Abstract: G 23N60 transistor N 343 AD 123B1
    Text: IXFH 23N60Q IXFT 23N60Q HiPerFETTM Power MOSFETs VDSS ID25 = = = RDS on Q-Class 600 V 23 A 0.32 Ω trr ≤ 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Gate Charge and Capacitances Preliminary Data Sheet Symbol Test Conditions Maximum Ratings


    Original     		PDF 23N60Q 250ns O-247 O-268 728B1 123B1 728B1 065B1 23N60 G 23N60 transistor N 343 AD

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHVTM Power MOSFET IXTP 1R4N60P IXTY 1R4N60P VDSS ID25 RDS on = 600 = 1.4 ≤ 9.0 V A Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		PDF 1R4N60P 1R4N60P O-220 O-252 405B2

    IXTP14N60PM

    Abstract: No abstract text available
    Text: PolarHVTM Power MOSFET IXTP14N60PM VDSS ID25 RDS on (Electrically Isolated Tab) = 600 V = 7 A Ω ≤ 550 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		PDF IXTP14N60PM O-220 14N60P 8-21-06E IXTP14N60PM

    IXTP18N60PM

    Abstract: No abstract text available
    Text: PolarHVTM Power MOSFET IXTP18N60PM VDSS ID25 RDS on (Electrically Isolated Tab) = 600 V = 9 A Ω ≤ 420 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		PDF IXTP18N60PM O-220 IXTP18N60PM

    123B16

    Abstract: IXFN70N60Q2 DS99029A
    Text: HiPerFETTM Power MOSFET IXFN 70N60Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 600 V ID25 = 70 A Ω RDS on = 80 mΩ ≤ 250 ns trr Preliminary Data Sheet miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions


    Original     		PDF 70N60Q2 OT-227 E153432 728B1 065B1 123B1 123B16 IXFN70N60Q2 DS99029A

    IRFC9130

    Abstract: SNF80504 IRFC360 IRFC250 SPF8
    Text: I to MOSFETS HI Ik A o s DUAL N CHANNEL PO W ER M O SFETS PACKAGE 6 PIN SIP TO-61 ISOLATED RDS(ON *D DEVICE bvdss @ 0 .5 ' d CONTINUOUS Pd TYPE VOLTS OHMS OHMS WATTS CHIP SND600 600 0.6 IXTD15N60 SND500 500 0.4 11.0 14.0 125 125 IRFC450 SND460 600 20.0 125


    OCR Scan     		PDF SND600 SND500 SND460 SND410 SND400 SND310 SND300 SND200 SND100 IXTD15N60 IRFC9130 SNF80504 IRFC360 IRFC250 SPF8

    MTA4N60E

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTA4N60E Fully Isolated TMOS E-FET™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 4.0 AMPERES 600 VOLTS RDS on = 1-20 OHM


    OCR Scan     		PDF MTA4N60E b3b7254 01G3Q01 01G3GG2 MTA4N60E

    h12H

    Abstract: h-12-H NESM10N60
    Text: NESM10N60 POWER MOSFET - N CHANNEL • • • • SWITCHING POWER SUPPLIES REPETITIVE AVALANCHE RATING ISOLATED HERMETIC PACKAGE HIGH RELIABILITY ABSOLUTE MAXIMUM RATINGS Tc = 25°C unless otherwise noted PARAM ETERS/TEST CONDITIONS SYMBOL LIM ITS 600 Drain-Source Voltage


    OCR Scan     		PDF NESM10N60 h12H h-12-H NESM10N60

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTB2N60E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TB2N60E TMOS E-FET™ High Energy Pow er FET D2PAK for S urface Mount Motorola Preferred Device TMOS POWER FET 2.0 AMPERES 600 VOLTS N-Channel Enhancement-Mode Silicon Gate


    OCR Scan     		PDF MTB2N60E/D TB2N60E