Untitled
Abstract: No abstract text available
Text: □ IXYS HiPerFET Power MOSFETs IXFN 200 N06 IXFN180 N07 IXFN 200 N07 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, L ow trr Symbol N07 N06 N07 N06 70 60 70 60 V V V V Continuous ±20 V Transient ±30 V 180 A Td = 25°C to 150°C; RGS = 1 M ß
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OCR Scan
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IXFN180
E153432
200N06/200N07
180N07
200N06
180N07
200N07
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PDF
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110N06
Abstract: 9000 044 053 siemens 110N07 P8000
Text: HiPerFETTM Power MOSFETs VDSS IXFK 110 N06 IXFK 105 N07 IXFK 110 N07 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions VDSS TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; RGS = 1 MW VGS VGSM Maximum Ratings N07 N06 N07
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ID130
150OC
100OC
110N06
9000 044 053 siemens
110N07
P8000
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PDF
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TO-264 Jedec package outline
Abstract: ID130 110N07
Text: HiPerFETTM Power MOSFETs VDSS IXFK 110 N06 IXFK 105 N07 IXFK 110 N07 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions VDSS TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; RGS = 1 MW VGS VGSM Maximum Ratings N07 N06 N07
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Original
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O-264
ID130
150OC
100OC
TO-264 Jedec package outline
ID130
110N07
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PDF
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9000 044 053 siemens
Abstract: 110N07
Text: HiPerFETTM Power MOSFETs VDSS IXFK 110 N06 IXFK 105 N07 IXFK 110 N07 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions VDSS TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; RGS = 1 MW VGS VGSM Maximum Ratings N07 N06 N07
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Original
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O-264
ID130
150OC
100OC
9000 044 053 siemens
110N07
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PDF
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n0612
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFH 76 N06-11 IXFH 76 N06-12 IXFH 76 N07-11 IXFH 76 N07-12 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS ID25 RDS on 60 V 60 V 70 V 70 V 76 A 76 A 76 A 76 A 11 mW 12 mW 11 mW 12 mW Preliminary data sheet Symbol
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Original
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N06-11
N06-12
N07-11
N07-12
ID119
O-247
100ms
n0612
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PDF
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200N07
Abstract: 180N07 200N06 BT 1496
Text: HiPerFETTM Power MOSFETs VDSS Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient N07 N06 N07 N06 ID25 A TC= 25°C ID130 IDM IAR TC= 130°C, limited by external leads TC= 25°C, pulse width limited by TJM
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Original
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ID130
200N06/200N07
180N07
200N07
200N06
BT 1496
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PDF
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFH 76 N06-11 IXFH 76 N06-12 IXFH 76 N07-11 IXFH 76 N07-12 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS ID25 RDS on 60 V 60 V 70 V 70 V 76 A 76 A 76 A 76 A 11 mW 12 mW 11 mW 12 mW Preliminary data sheet Symbol
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Original
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N06-11
N06-12
N07-11
N07-12
O-247
ID119
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PDF
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transistor ixfh application note
Abstract: n0612 N-0611
Text: HiPerFETTM Power MOSFETs IXFH 76 N06-11 IXFH 76 N06-12 IXFH 76 N07-11 IXFH 76 N07-12 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS ID25 RDS on 60 V 60 V 70 V 70 V 76 A 76 A 76 A 76 A 11 mW 12 mW 11 mW 12 mW Preliminary data sheet Symbol
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Original
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N06-11
N06-12
N07-11
N07-12
O-247
ID119
transistor ixfh application note
n0612
N-0611
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PDF
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Untitled
Abstract: No abstract text available
Text: □ IXYS HiPerFET'“ V DSS IXFH IXFH IXFH IXFH Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS Family 76 76 76 76 N06-11 N06-12 N07-11 N07-12 60 60 70 70 V V V V D DS on ^D25 76 76 76 76 A A A A 11 12 11 12 mQ mQ mQ mQ Preliminary data sheet
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OCR Scan
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N06-11
N06-12
N07-11
N07-12
O-247
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PDF
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transistor ixfh application note
Abstract: Converters D119 VUO35-16 N07
Text: HiPerFETTM Power MOSFETs VDSS IXFH IXFH IXFH IXFH N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family 76 76 76 76 N06-11 N06-12 N07-11 N07-12 60 60 70 70 V V V V ID25 76 76 76 76 A A A A RDS on 11 12 11 12 mW mW mW mW Preliminary data sheet Symbol
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Original
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N06-11
N06-12
N07-11
N07-12
transistor ixfh application note
Converters
D119
VUO35-16 N07
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PDF
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Untitled
Abstract: No abstract text available
Text: VDSS HiPerFET Power MOSFETs IXFH IXFH IXFH IXFH N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family 76 76 76 76 N06-11 N06-12 N07-11 N07-12 60 V 60 V 70 V 70 V ^D25 76 76 76 76 A A A A p DS on 11 12 11 12 m£2 m il mQ mQ TO-247 AD Symbol Test Conditions
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OCR Scan
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N06-11
N06-12
N07-11
N07-12
O-247
IXFH76N06-11
IXFH76N06-12
IXFM76N07-11
IXFH7SN07-12
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PDF
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STM TO 247 package inductance
Abstract: No abstract text available
Text: H ÎYY^s JL flHVw A- Ik»!? HiPerFET Power MOSFETs V DSS IXFH IXFH IXFH IXFH N-Channel Enhancement Mode High dv/dt, L o w trr, HDM O S™ Family 76 76 76 76 N06-11 N06-12 N07-11 N07-12 60 60 70 70 V V V V D DS on ^D25 76 76 76 76 A A A A 11 12 11 12 mQ
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OCR Scan
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N06-11
N06-12
N07-11
N07-12
O-247
N06-11
N06-12
N07-11
N07-12
STM TO 247 package inductance
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PDF
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Untitled
Abstract: No abstract text available
Text: [ /Title RFF70 N06 /Subject (25A, 60V, 0.025 Ohm, N-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, N-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF70N06 Semiconductor 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET September 1998
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Original
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RFF70N06
RFF70N06
MIL-S-19500.
150oC,
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
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PDF
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F16N06
Abstract: N06 MOSFET TO-252AA Package mos fet *16N06 AN9321 RFD16N06 RFD16N06SM RFD16N06SM9A TB334
Text: [ /Title RFD16 N06, RFD16 N06SM /Subject (16A, 60V, 0.047 Ohm, N-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFET, TO251AA, TO252AA) /Cre- RFD16N06, RFD16N06SM Semiconductor 16A, 60V, 0.047 Ohm, N-Channel Power MOSFET
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Original
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RFD16
N06SM)
O251AA,
O252AA)
RFD16N06,
RFD16N06SM
1e-30
07e-3
19e-7)
F16N06
N06 MOSFET
TO-252AA Package mos fet
*16N06
AN9321
RFD16N06
RFD16N06SM
RFD16N06SM9A
TB334
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PDF
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200N06
Abstract: SOT-227 Package
Text: HiPerFETTM Power MOSFETs IXFN 200 N06 IXFN 200 N07 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 IL RMS TC= 25°C; Chip capability
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Original
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728B1
200N06
SOT-227 Package
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PDF
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200N07
Abstract: 200N06 180N07 IXFN180
Text: HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol IXFN 200 N06 IXFN 180 N07 IXFN 200 N07 Maximum Ratings TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; RGS = 1 MW VGS VGSM Continuous Transient ID25 TC= 25°C; Chip capability
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Original
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150OC
100OC
200N07
200N06
180N07
IXFN180
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PDF
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IXFN180
Abstract: 200N06
Text: HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol IXFN 200 N06 IXFN 180 N07 IXFN 200 N07 Maximum Ratings TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; RGS = 1 MW VGS VGSM Continuous Transient ID25 TC= 25°C; Chip capability
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Original
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200N06/200N07
180N07
IXFN180
150OC
100OC
IXFN180
200N06
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PDF
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol IXFN 200 N06 IXFN 180 N07 IXFN 200 N07 Maximum Ratings TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient I D25 TC= 25°C; Chip capability
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Original
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PDF
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Untitled
Abstract: No abstract text available
Text: □ IXYS HiPerFET VDSS Power MOSFETs IXFK 110 N06 IXFK 105 N07 IXFK 110 N07 N -C h an n el E n h a n ce m e n t M ode A v a la n c h e R ated, High dv/dt, L o w trr Symbol TestConditions v DSS Tj = 25°C to 150°C v DGR Td = 25°C to 150°C; RGS = 1 M£i
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OCR Scan
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O-264
110N06
105N07
110N07
|
PDF
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76N06
Abstract: 76N07-11 76N07-12 70N06
Text: IXFH 76N07-11 IXFH 76N07-12 IXFH 76N06 nixY S Preliminary Data D HiPerFET Power MOSFETs IXFH 76N06 IXFH 76N07-11 IXFH 76N07-12 ^DSS ^D25 60 V 70 V 70 V 76 A 76 A 76 A DS on 11 m £2 11 m i2 1 2 m i2 trr 150 ns 150 ns 150 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family
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OCR Scan
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76N06
76N07-11
76N07-12
O-247
70N06
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PDF
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200N06
Abstract: 4835 b 110N06 n
Text: HiPerFET Power MOSFETs v ' * f k 110 no7 IXFN 200 N07 IXFK110N06 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr i y p k o n n Nfifi D DSS ^D25 DS on 70 V 110 A 70 V 200 A 60 V 110 A 60 V 200 A trr < 250 ns 6 6 6 6 m£2 mQ mQ mQ TO-264 AA (IXFK)
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OCR Scan
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IXFK110N06
O-264
OT-227
E153432
13Fig,
110NO6
200M06
110N07
200N06
4835 b
110N06 n
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. 30V N-Channel Enhancement-Mode MOSFET LN2306LT1G VDS= 30V RDS ON , Vgs@10V, [email protected] = 38mΩ RDS(ON), [email protected], [email protected] = 43mΩ RDS(ON), [email protected], [email protected] = 62mΩ 3 1 2 Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance
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Original
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LN2306LT1G
236AB)
3000/Tape
LN2306LT3G
10000/Tape
06LT1G
OT-23
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PDF
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N06 MOSFET
Abstract: LN2306LT1G n06g ln2306 43m marking N-Channel, 30V, 4.0A, Power MOSFET SOT-23
Text: LESHAN RADIO COMPANY, LTD. 30V N-Channel Enhancement-Mode MOSFET LN2306LT1G VDS= 30V RDS ON , Vgs@10V, [email protected] = 38mΩ RDS(ON), [email protected], [email protected] = 43mΩ RDS(ON), [email protected], [email protected] = 62mΩ 3 1 2 Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance
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Original
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LN2306LT1G
236AB)
3000/Tape
LN2306LT3G
10000/Tape
OT-23
N06 MOSFET
LN2306LT1G
n06g
ln2306
43m marking
N-Channel, 30V, 4.0A, Power MOSFET SOT-23
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. LN2306LT1G S-LN2306LT1G 30V N-Channel Enhancement-Mode MOSFET VDS= 30V RDS ON , Vgs@10V, [email protected] = 38mΩ RDS(ON), [email protected], [email protected] = 43mΩ RDS(ON), [email protected], [email protected] = 62mΩ 3 1 2 Features Advanced trench process technology
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Original
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LN2306LT1G
S-LN2306LT1G
AEC-Q101
236AB)
LN2306LT3G
S-LN2306LT3G
3000/Tape
10000/Tape
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PDF
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