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    RFD16N06 Price and Stock

    onsemi RFD16N06LESM9A

    MOSFET N-CH 60V 16A TO252AA
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    DigiKey RFD16N06LESM9A Digi-Reel 3,081 1
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    RFD16N06LESM9A Cut Tape 3,081 1
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    RFD16N06LESM9A Reel 2,500 2,500
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    Avnet Americas RFD16N06LESM9A Reel 13 Weeks 2,500
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    Mouser Electronics RFD16N06LESM9A 3,756
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    Newark RFD16N06LESM9A Cut Tape 1,737 5
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    RFD16N06LESM9A Reel 2,500
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    Onlinecomponents.com RFD16N06LESM9A
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    Rochester Electronics RFD16N06LESM9A 278 1
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    TME RFD16N06LESM9A 382 1
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    Richardson RFPD RFD16N06LESM9A 2,500
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    New Advantage Corporation RFD16N06LESM9A 2,500 1
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    Fairchild Semiconductor Corporation RFD16N06SM9A

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    Bristol Electronics RFD16N06SM9A 1,334
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    Quest Components RFD16N06SM9A 2,034
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    RFD16N06SM9A 1,067
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    HARTING Technology Group RFD16N065M9A

    Electronic Component
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    ComSIT USA RFD16N065M9A 2,500
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    Fairchild Semiconductor Corporation RFD16N06LESM9A

    Electronic Component
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    ComSIT USA RFD16N06LESM9A 1,722
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    Chip 1 Exchange RFD16N06LESM9A 800
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    Intel Corporation RFD16N06LESM9A

    INSTOCK
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    RFD16N06 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RFD16N06 Harris Semiconductor 16A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFET Original PDF
    RFD16N06 Intersil 16A, 60V, 0.047 ?, N-Channel Power MOSFET Original PDF
    RFD16N06LE Fairchild Semiconductor 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFET Original PDF
    RFD16N06LE Intersil 16A, 60V, 0.047 ?, Logic Level, N-Channel Power MOSFETs Original PDF
    RFD16N06LESM Fairchild Semiconductor 16 A, 60 V, 0.047 ohm, Logic Level, N-Channel Power MOSFET Original PDF
    RFD16N06LESM Harris Semiconductor Power MOSFET Product Matrix Original PDF
    RFD16N06LESM Intersil 16A, 60V, 0.047 ?, Logic Level, N-Channel Power MOSFETs Original PDF
    RFD16N06LESM Toshiba Power MOSFETs Cross Reference Guide Original PDF
    RFD16N06LESM9A Fairchild Semiconductor 16 A, 60 V, 0.047 ohm, Logic Level, N-Channel Power MOSFET Original PDF
    RFD16N06SM Harris Semiconductor 16A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFET Original PDF
    RFD16N06SM Harris Semiconductor Power MOSFET Product Matrix Original PDF
    RFD16N06SM Harris Semiconductor 16A, 60V, 0.047 Ohm, N-Channel Power MOSFET Original PDF
    RFD16N06SM Toshiba Power MOSFETs Cross Reference Guide Original PDF

    RFD16N06 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    16n06l

    Abstract: 16n06 AN7254 AN7260 RFD16N06LE RFD16N06LESM RFD16N06LESM9A TB334 16N06LE TA49027
    Text: RFD16N06LE, RFD16N06LESM Data Sheet 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum


    Original     		RFD16N06LE, RFD16N06LESM 16n06l 16n06 AN7254 AN7260 RFD16N06LE RFD16N06LESM RFD16N06LESM9A TB334 16N06LE TA49027 PDF

    Untitled

    Abstract: No abstract text available
    Text: RFD16N06LESM Data Sheet September 2002 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs Features • 16A, 60V These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum


    Original     		RFD16N06LESM PDF

    pspice model

    Abstract: F16N06 RFD16N06SM9A AN9321 AN7254 AN7260 FIGURE13 RFD16N06 RFD16N06SM mosfet motor dc 48v
    Text: RFD16N06, RFD16N06SM S E M I C O N D U C T O R 16A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packaging • 16A, 60V JEDEC TO-251AA • rDS ON = 0.047Ω SOURCE DRAIN GATE DRAIN (FLANGE) • Temperature Compensating PSPICE Model


    Original     		RFD16N06, RFD16N06SM O-251AA 175oC O-252AA RFD16N06 RFD16N06SM 1e-30 07e-3 19e-7) pspice model F16N06 RFD16N06SM9A AN9321 AN7254 AN7260 FIGURE13 mosfet motor dc 48v PDF

    Untitled

    Abstract: No abstract text available
    Text: RFD16N06LESM October 2013 Data Sheet N-Channel Logic Level Power MOSFET 60 V, 16 A, 47 mΩ Features • 16A, 60V These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    Original     		RFD16N06LESM RFD16N06LESM PDF

    F16N06

    Abstract: N06 MOSFET TO-252AA Package mos fet *16N06 AN9321 RFD16N06 RFD16N06SM RFD16N06SM9A TB334
    Text: [ /Title RFD16 N06, RFD16 N06SM /Subject (16A, 60V, 0.047 Ohm, N-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFET, TO251AA, TO252AA) /Cre- RFD16N06, RFD16N06SM Semiconductor 16A, 60V, 0.047 Ohm, N-Channel Power MOSFET


    Original     		RFD16 N06SM) O251AA, O252AA) RFD16N06, RFD16N06SM 1e-30 07e-3 19e-7) F16N06 N06 MOSFET TO-252AA Package mos fet *16N06 AN9321 RFD16N06 RFD16N06SM RFD16N06SM9A TB334 PDF

    16N06

    Abstract: RFD16N06
    Text: RFD16N06LE, RFD16N06LESM Data Sheet Title FD1 06L D16 6LE M bt A, V, 47 m, gic vel, anwer OSTs) utho October 1999 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs Features These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes


    Original     		RFD16N06LE, RFD16N06LESM TB334 16N06 RFD16N06 PDF

    16n06l

    Abstract: 16N06 16N06LE AN7254 AN7260 RFD16N06LE RFD16N06LESM RFD16N06LESM9A TB334
    Text: RFD16N06LE, RFD16N06LESM Data Sheet 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum


    Original     		RFD16N06LE, RFD16N06LESM 16n06l 16N06 16N06LE AN7254 AN7260 RFD16N06LE RFD16N06LESM RFD16N06LESM9A TB334 PDF

    16n06l

    Abstract: AN7254 AN7260 RFD16N06LESM RFD16N06LESM9A TB334
    Text: RFD16N06LESM Data Sheet September 2002 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs Features • 16A, 60V These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum


    Original     		RFD16N06LESM 16n06l AN7254 AN7260 RFD16N06LESM RFD16N06LESM9A TB334 PDF

    SS*2n60b

    Abstract: FDD5614P FQD7P20 FDD6512A SFR9224 FQD14N15 IRFR420A MA8630 MOSFET TO-252 FDD6530A
    Text: Discrete MOSFET TO-252 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-252(DPAK) N-Channel FDD3706 20 Single 0.009 0.011 0.016 - 16 50 44 FDD6512A 20 Single - 0.021 0.031


    Original     		O-252 O-252 FDD3706 FDD6512A FDD6530A RFD20N03SM FDD6676 ISL9N306AD3ST FDD6672A FDD66 SS*2n60b FDD5614P FQD7P20 FDD6512A SFR9224 FQD14N15 IRFR420A MA8630 MOSFET TO-252 FDD6530A PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


    Original     		PDF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor PDF

    FLMP SuperSOT-6

    Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
    Text: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1


    Original     		SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80 PDF

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237 PDF

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 PDF

    irf540n irf640

    Abstract: IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460
    Text: MOSFET Selection Trees Power MOSFET Products N-CHANNEL MOSFETs N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S


    Original     		BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 irf540n irf640 IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460 PDF

    RFD14N05 spice

    Abstract: HUF76343 HRF3205 equivalent HUF75623P3 MOSFET S1A HRF3205 HUF76645P3 RF1K49093 RFP70N06 HRF3205S
    Text: Power MOSFET SPICE and Thermal Models Power MOSFET Products Features • • • • Sub Circuit Approach Full Operating Temperature Range Accurate Gate Charge Modeling BVDSS Modeling at Low and High Currents • • • Package Inductances Gate Source Resistance


    Original     		HRF3205 HRF3205S HRFZ44N HUF75229P3 HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S RFD14N05 spice HUF76343 HRF3205 equivalent HUF75623P3 MOSFET S1A HRF3205 HUF76645P3 RF1K49093 RFP70N06 HRF3205S PDF

    Untitled

    Abstract: No abstract text available
    Text: RFD16N06LE, RFD16N06LESM Semiconductor April 1999 Data Sheet 16A, 60V, 0.047 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    OCR Scan     		RFD16N06LE, RFD16N06LESM PDF

    16n06l

    Abstract: pspice model for ttl
    Text: m W HARRIS S E M I C O N D U C T O R March1994 RFD16N06LE RFD16N06LESM 16A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs MegaFETs Packaging Features JEDEC TO-251 AA TOP VIEW • 16A, 60V • rDS(ON) = 0 .0 4 7 Q • 2KV ESD Protected


    OCR Scan     		RFD16N06LE RFD16N06LESM O-251 h1994 O-252AA RFD16N06LESM 6756e-4 425e-7 59e-10 16n06l pspice model for ttl PDF

    F16N06

    Abstract: 00u2 107E3 *16N06 16N06
    Text: RFD16N06, RFD16N06SM fu HARRIS S E M I C O N D U C T O R 16A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packaging JEDEC TO-251AA • 16A, 6 0V • rDS<ON = 0 .0 4 7 U D R A IN F L A N G E ) • Temperature Compensating PSPICE Model


    OCR Scan     		RFD16N06, RFD16N06SM O-251AA O-252AA RFD16N06 RFD16N06SM O-251AA O-252AA F16N06 F16N06 00u2 107E3 *16N06 16N06 PDF

    16n06le

    Abstract: No abstract text available
    Text: RFD16N06LE, RFD16N06LESM in t e f s il D ata S h e e t 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum


    OCR Scan     		RFD16N06LE, RFD16N06LESM AN7254 AN7260. 16n06le PDF

    Untitled

    Abstract: No abstract text available
    Text: Hormis S RFD16N06, RFD16N06SM Semiconductor y 16A, 60V, 0.047 Ohm, N-Channel Power MOSFET September 1998 Features Description • 16A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives opti­


    OCR Scan     		RFD16N06, RFD16N06SM 1e-10 1e-30 07e-3 19e-7) 45e-3 66e-5) 25e-3 PDF

    RF1S42N03L

    Abstract: No abstract text available
    Text: HARRI S DI S CRE TE P O W E R MOS F E T LINE T O - 2 5 2 PACKAGE STANDARD GATE DEVICES V dss V r DS(ON) 1 (A ) T O -2 5 2 A A CHANNEL 20V 0.0250 20A RFD20N02SM N 50V 0.3000 8A RFD8P05SM P 0.0470 16A RFD16N05SM N 0.100Q 14A RFD14N05SM N 0.1500 15A RFD15P05SM


    OCR Scan     		RFD20N02SM RFD8P05SM RFD16N05SM RFD14N05SM RFD15P05SM RFD16N06SM RFD14N06SM RFD15P06SM RFD8P06ESM RFD3055SM RF1S42N03L PDF

    field-effect transistors

    Abstract: 05LSM RFP8N18L RFP25N06L transistors 2N6904 field-effect transistor RFP14N05L M 615 transistor transistor 684
    Text: _ POWER MOSFETs 6 L O G IC L E V E L P O W E R M O S F E T s PAGE 2N6901 N-Channel Logic Level Power MOS Field-Effect Transistor L2F E T . 6-3 2N6902 N-Channel Logic Level Power MOS Field-Effect Transistor (L2F E T ) .


    OCR Scan     		2N6901 2N6902 2N6903 2N6904 RFL1N08L, RFL1N10L RFL1N12L, RFL1N15L RFL1N18L, RFL1N20L field-effect transistors 05LSM RFP8N18L RFP25N06L transistors field-effect transistor RFP14N05L M 615 transistor transistor 684 PDF