Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    N39 TRANSISTOR Search Results

    N39 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    N39 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SOT23 W1P

    Abstract: MARKING W1P transistor w1P MARKING W2 SOT23 marking code R2 sot23 marking code w2 sot23 marking code W1p marking code P2p SOT23 marking W1 sot23 marking code w2 sot323
    Text: DISCRETE SEMICONDUCTORS Marking codes RF Wideband Transistors Supersedes data of 1997 Nov 21 1999 Jul 21 Philips Semiconductors RF Wideband Transistors Marking codes TYPE NUMBER TO PACKAGE AND MARKING CODE TYPE NUMBER PACKAGE BF547 BF547W BF747 BFC505 SOT23


    Original
    BF547 BF547W BF747 BFC505 OT323 OT353 OT143 SOT23 W1P MARKING W1P transistor w1P MARKING W2 SOT23 marking code R2 sot23 marking code w2 sot23 marking code W1p marking code P2p SOT23 marking W1 sot23 marking code w2 sot323 PDF

    BFG540 N43

    Abstract: w1p 22 SOT23 W1P sot143 Marking code V12 "W1P" f763 SOT89 MARKING CODE marking code V3 SOT89 N5 MARKING CODE V3 marking code
    Text: DISCRETE SEMICONDUCTORS DATA SHEET Marking codes RF Wideband Transistors 1997 Nov 22 File under Discrete Semiconductors, SC14 Philips Semiconductors RF Wideband Transistors Marking codes TYPE NUMBER TO PACKAGE AND MARKING CODE TYPE NUMBER PACKAGE MARKING CODE


    Original
    BF547 BF547W BF689K BF747 OT323 OT353 OT143 BFG540 N43 w1p 22 SOT23 W1P sot143 Marking code V12 "W1P" f763 SOT89 MARKING CODE marking code V3 SOT89 N5 MARKING CODE V3 marking code PDF

    n37 transistor

    Abstract: EL2075 EL4083 n38 transistor n34 transistor VFI15 VFI13 EL2082 EL4083CN EL4083CS
    Text: EL4083 CT ODU ENT E PR PLACEM r at T E L E O R S e B D C nte /tsc O NDE port MME ical Sup ersil.com O C E n t h w.in NO R oData r Tec oSheet r ww ct u conta -INTERSIL 1-888 December 1995, Rev. B FN7157 Current Mode Four Quadrant Multiplier Features The EL4083 makes use of an Elantec


    Original
    EL4083 FN7157 EL4083 n37 transistor EL2075 n38 transistor n34 transistor VFI15 VFI13 EL2082 EL4083CN EL4083CS PDF

    n37 transistor

    Abstract: N38 transistor NPN N43 fi-14 current conveyors EL4083 EL4083C EL4083CN N39 transistor QCX0002
    Text: EL4083C EL4083C Current Mode Four Quadrant Multiplier Features General Description  Novel current mode design Virtual ground current summing inputs Differential ground referenced current outputs  High speed both inputs 200 MHz bandwidth 12 ns 1% settling time


    Original
    EL4083C 4083C n37 transistor N38 transistor NPN N43 fi-14 current conveyors EL4083 EL4083C EL4083CN N39 transistor QCX0002 PDF

    current conveyors

    Abstract: 100 N31 transistor 2e17 n37 transistor 100 n37 three pin
    Text: EL4083C EL4083C Current Mode Four Quadrant Multiplier Features General Description  Novel current mode design Virtual ground current summing inputs Differential ground referenced current outputs  High speed both inputs 200 MHz bandwidth 12 ns 1% settling time


    Original
    EL4083C 4083C current conveyors 100 N31 transistor 2e17 n37 transistor 100 n37 three pin PDF

    inverter omron 3G3jV

    Abstract: inverter omron 3G3EV 3G3JV-AB004 3G3JV-AB007 inverter omron 3G3jV-a4022 OMRON 3G3JV 3G3JV-A2015 transistor A2022 catalog inverter omron 3G3EV 3G3JV-A2007
    Text: Cat.No. I905–E1–2 SYSDRIVE 3G3JV Series CATALOG Nomenclature Panel Top protection cover: Remove this cover when wiring the upper terminal block. Upper terminal block: A terminal block on the input side of the main circuit. Digital Operator: Used to set parameters, perform various


    Original
    3G3JV-A2001 3G3JV-A2002 3G3JV-A2004 3G3JV-A2007 3G3JV-A2015 3G3JV-A2022 3G3JV-A2037 3G3JV-AB001 3G3JV-AB002 3G3JV-AB004 inverter omron 3G3jV inverter omron 3G3EV 3G3JV-AB004 3G3JV-AB007 inverter omron 3G3jV-a4022 OMRON 3G3JV 3G3JV-A2015 transistor A2022 catalog inverter omron 3G3EV 3G3JV-A2007 PDF

    N45 transistor

    Abstract: Ghz dB transistor BFG505 bfg505xr MRA639
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG505; BFG505/X; BFG505/XR NPN 9 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFG505; BFG505/X; BFG505/XR


    Original
    BFG505; BFG505/X; BFG505/XR BFG505 MSB014 OT143B. BFG505/X N45 transistor Ghz dB transistor BFG505 bfg505xr MRA639 PDF

    inverter omron 3G3EV

    Abstract: sysdrive 3G3EV inverter omron 3G3EV 3g3EV omron inverter Sysdrive 3G3EV 3G3EV inverter 3G3EV A2004 omron inverter 11 kW 3g3ev 3G3EV-A2007 inverter omron 3G3EV -AB004 MA
    Text: USER’S MANUAL SYSDRIVE 3G3EV SERIES Standard Models Compact Low-noise Inverter Thank you for choosing this SYSDRIVE 3G3EV-series product. Proper use and handling of the product will ensure proper product performance, will length product life, and may prevent possible accidents.


    Original
    400-VAC-class 3G3EV-A4015M-CUE inverter omron 3G3EV sysdrive 3G3EV inverter omron 3G3EV 3g3EV omron inverter Sysdrive 3G3EV 3G3EV inverter 3G3EV A2004 omron inverter 11 kW 3g3ev 3G3EV-A2007 inverter omron 3G3EV -AB004 MA PDF

    BFG505

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D071 BFG505; BFG505/X NPN 9 GHz wideband transistors Product specification Supersedes data of September 1995 1998 Oct 02 Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG505; BFG505/X


    Original
    M3D071 BFG505; BFG505/X BFG505 SCA60 125104/00/03/pp16 BFG505 PDF

    vrm circuit testing

    Abstract: VRM Section of Motherboard VRM 9.0 CISPR22 249205 vrm section intel vrm circuit testing
    Text: VRM 9.0 DC-DC Converter Design Guidelines April 2001 Order Number 249205-002 VRM 9.0 DC-DC Converter Design Guidelines Information in this document is provided in connection with Intel® products. No license, express or implied, by estoppel or otherwise, to any intellectual property


    Original
    CISPR22 MILSTD-217F. UL1950 IEC950 vrm circuit testing VRM Section of Motherboard VRM 9.0 249205 vrm section intel vrm circuit testing PDF

    transistor P397

    Abstract: transistor P479 P449 p331 TRANSISTOR transistor k38 v6 transistor P519 am2 am3 p055 power transistor f AJ38 w38 transistor
    Text: MSX532 Matrix Switch Preliminary Data Sheet Features Description • • The MSX family of SRAM-based bit-oriented switching devices offers flow-through NRZ datarates of 300Mbps and registered clock frequencies of 200MHz. The 532 I/O Buffers IOBs are individually configured. The IOBs can be connected


    Original
    MSX532 200MHz 300Mbps MKT-MSX532-DS transistor P397 transistor P479 P449 p331 TRANSISTOR transistor k38 v6 transistor P519 am2 am3 p055 power transistor f AJ38 w38 transistor PDF

    n37 transistor

    Abstract: AH34 transistor crosspoint 256 x 256 ocx 256 w34 transistor AF39 IN125P U39-W39 AB-39 IN80P IN70N
    Text: OCX256 Crosspoint Switch Advanced Data Sheet Features • • • • 667 Mb/s port data bandwidth, >85Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable 256 configurable I/O ports – 128 dedicated differential input ports


    Original
    OCX256 85Gb/s all5202593, MKT-OCX256-DS n37 transistor AH34 transistor crosspoint 256 x 256 ocx 256 w34 transistor AF39 IN125P U39-W39 AB-39 IN80P IN70N PDF

    w34 transistor

    Abstract: IN118 IN125 IN19IN20 AB-39
    Text: OCX256 Crosspoint Switch Advanced Data Sheet Features • • • • 667 Mb/s port data bandwidth, >85Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable 256 configurable I/O ports – 128 dedicated differential input ports


    Original
    OCX256 85Gb/s all202593, MKT-OCX256-DS w34 transistor IN118 IN125 IN19IN20 AB-39 PDF

    fairchild aa35

    Abstract: Fairchild F8 A38 fairchild fairchild Af34 fairchild Af35 w38 transistor fairchild AG6 diode in60p OCX256 IN101P
    Text: OCX256 Crosspoint Switch Advanced Datasheet Features • • • • 667 Mb/s port data bandwidth, >85Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable LVDS I/O OCX256L and LVPECL I/O (OCX256P) versions


    Original
    OCX256 85Gb/s OCX256L) OCX256P) fairchild aa35 Fairchild F8 A38 fairchild fairchild Af34 fairchild Af35 w38 transistor fairchild AG6 diode in60p IN101P PDF

    SOT23 W1P

    Abstract: BFG540 N43 SOT89 MARKING CODE "W1P" MARKING W1P sot143 Marking code p1 PSH10 sot143 sot343 marking code V3 w1p code
    Text: Philips Semiconductors RF Wideband Transistors Marking codes TYPE NUMBER TO PACKAGE AND MARKING CODE TYPE NUMBER PACKAGE BF547 SOT23 BF547W BF689K SOT323 SOT54 BF747 SOT23 SOT54 BF763 BFC505 BFC520 BFE505 BFE520 BFG10 BFG10/X BFG10W/X BFG11 BFG11/X BFG11W/X


    OCR Scan
    BF547 BF547W BF689K BF747 BF763 BFC505 BFC520 BFE505 BFE520 BFG10 SOT23 W1P BFG540 N43 SOT89 MARKING CODE "W1P" MARKING W1P sot143 Marking code p1 PSH10 sot143 sot343 marking code V3 w1p code PDF

    transistor N43

    Abstract: 4083C
    Text: HIGH PERFORMANCE ANALOG iNTEOTATÊDCMCUfTS F eatu res Current Mode Four Quadrant Multiplier G eneral D escrip tion T he 4083C m akes use of an E lantec fully com plim entary oxide isolated bipolar process to produce a p a te n t pending cu rren t in, cu rren t out four q uadrant m ultiplier. In p u t and o u tp u t signal


    OCR Scan
    EL4083C ixin17 VFI10 VFI12 VFI13 VFI14 VFI15 VFI16 VFI17 transistor N43 4083C PDF

    sot-23 MARKING CODE ZA

    Abstract: b0808 BCB47B BCB17-16 marking za sot89 2SB0151K marking k5 sot89 SOT 86 MARKING E4 n33 SOT-23 10Y sot-23
    Text: SURFACE-MOUNTED DEVICE MARKINGS Because of their smali size, it's not possible to show types/ values on most surface-mounted components. The following tables show the code markings used to identify most common surface-mounted transistors and diodes. Note that the same


    OCR Scan
    OT-23, OT-89 OT-143 BZV49 OT-23 2SC2059K sot-23 MARKING CODE ZA b0808 BCB47B BCB17-16 marking za sot89 2SB0151K marking k5 sot89 SOT 86 MARKING E4 n33 SOT-23 10Y sot-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of September 1995 Philips Sem iconductors 1998 Oct 02 PHILIPS Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG505; BFG505/X FEATURES PINNING • High power gain DESCRIPTION


    OCR Scan
    BFG505; BFG505/X BFG505 SCA60 125104/00/03/pp16 PDF

    pj 0159

    Abstract: No abstract text available
    Text: PhNip^temicon^ b b 5 3 T 31 0 □ 2 *4T b 7 SMfl Hi AP X AKER P HI L I P S / B I S CRE T E NPN 9 GHz wideband transistor FEATURES • High power gain ^ b7E BFG505; BFG505/X; BFG505/XR PINNING PIN 4 DESCRIPTION • Low noise figure • High transition frequency


    OCR Scan
    BFG505; BFG505/X; BFG505/XR BFG505 BFG505 pj 0159 PDF

    557 sot143

    Abstract: PHILIPS 557 SOT143 BFG505 BFRS05 LG 631 TV LG t51 0194 asm 1442
    Text: Philips Semiconductors AMER bbS3T31 ODSHTb? P H IL IP S /D IS C R E T E NPN 9 GHz wideband transistor FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. SMfl ^ Product specification


    OCR Scan
    BFG505; BFG505/X; BFG505/XR BFG505 OT143 BFG505 BFG5064 557 sot143 PHILIPS 557 SOT143 BFRS05 LG 631 TV LG t51 0194 asm 1442 PDF

    transistor SMD 1p6

    Abstract: SMD transistor n36 TRANSISTOR N36 SMD report on colpitts oscillator a 933 transistor Transistor 933 smd n43 transistor A 933 BFG520 A3 smd transistor spec
    Text: Philips Semiconductors 933 MHz low power downconverter with 60 MHz I.F. ^ lcatlon rePort 933 \r H z L O W P O W E R D O W N C O N V E R T E R W IT H 60 M H z I.F . Introduction This application note describes the performance o f a 900 M Hz low voltage 3 volt dow nconverter


    OCR Scan
    Pf5103 BC807 BFG505X BFG520 BB131 BFG54 transistor SMD 1p6 SMD transistor n36 TRANSISTOR N36 SMD report on colpitts oscillator a 933 transistor Transistor 933 smd n43 transistor A 933 BFG520 A3 smd transistor spec PDF

    TRANSISTOR SMD L82

    Abstract: report on colpitts oscillator siemens c35 terminal BFG520 B69812-N1897-A320 BB131 BC807 BFG505 BFG505X smd transistor JJ
    Text: Philips Semiconductors 1890 MHz low power downconverter with 110 MHz I.F. Application report 1890 M H z L O W P O W E R D O W N C O N V E R T E R W IT H 110 M H z I .F . In tro d u c tio n T his application note describes the perform ance o f a 1890 M H z low voltage 3 volt


    OCR Scan
    L4-L11. B69812-N1897-A320) BC807 BFG505X BFG505 BB131 TRANSISTOR SMD L82 report on colpitts oscillator siemens c35 terminal BFG520 B69812-N1897-A320 BB131 BC807 BFG505 BFG505X smd transistor JJ PDF

    AH40

    Abstract: AW33 AA41 BC35 EPF8050M
    Text: EPF8050M FLEX 8000M Programmable Logic Device March 1995, ver. 3 Features Data Sheet • Prelim inary Information ■ ■ ■ ■ Architecture Description Ideal for ASIC prototyping Combination of four EPF81188 devices and one Field Programmable Interconnect FPIC device


    OCR Scan
    EPF8050M 8000M EPF81188 30-MHz EPF8050M 560-pin 26-inch 50-mil AH40 AW33 AA41 BC35 PDF

    epf8050M

    Abstract: No abstract text available
    Text: EPF8050M FLEX 8000M Programmable Logic Device March 1995, ver. 3 Features D a tasheet • Prelim inary Information ■ ■ ■ Architecture Description The Altera EPF8050M device combines four EPF81188 devices and one Field Programmable Interconnect FPIC device to create a 50,000-gate


    OCR Scan
    EPF8050M 8000M EPF8050M EPF81188 000-gate 560-pin EPF8050M, PDF