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    N82S17 Price and Stock

    Signetics N82S17F

    IC,SRAM,256X1,S-TTL,DIP,16PIN,CERAMIC
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    Chip 1 Exchange N82S17F 2,068
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    Signetics N82S17N

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    Component Electronics, Inc N82S17N 12
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    N82S17 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    N82S17 Signetics Bipolar Memory IC Data Book 1982 Scan PDF
    N82S17B Unknown IC Datasheet (Short Description and Cross Reference Only) Scan PDF
    N82S17F Signetics 256-Bit Bipolar RAM Original PDF
    N82S17F Unknown IC Datasheet (Short Description and Cross Reference Only) Scan PDF
    N82S17F Signetics Integrated Circuits Catalogue 1978/79 Scan PDF
    N82S17N Signetics 256-Bit Bipolar RAM Original PDF
    N82S17N Unknown IC Datasheet (Short Description and Cross Reference Only) Scan PDF
    N82S17N Signetics Integrated Circuits Catalogue 1978/79 Scan PDF
    N82S17R Signetics 256-Bit Bipolar RAM Original PDF

    N82S17 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ay-5-1012

    Abstract: ali m 3329 PROCESSOR ALI 3329 ali 3329 b ali 3329 SN74188 sn74s188 str 52100 SN7452 replacement of bel 187 transistor
    Text: GENERAL INFORMATION lie of Contents • Alphanumeric Index • Selection Guides • Glossary INTERCHANGEABiliTY GUIDE MOS MEMORIES TTL MEMORIES ECl MEMORIES MICROPROCESSOR SUMMARY 38510/MACH IV PROCUREMENT SPECIFICATION JAN Mll-M-38510 INTEGRATED CIRCUITS


    Original     		PDF 38510/MACH Mll-M-38510 Z501300 Z501200 Z501201 Z012510 ZOl1510 ay-5-1012 ali m 3329 PROCESSOR ALI 3329 ali 3329 b ali 3329 SN74188 sn74s188 str 52100 SN7452 replacement of bel 187 transistor

    82S16

    Abstract: N82S16N N82S116N 82S17 "pin compatible" N82S16 82S17 N82S17 82S116 S82S16 N82S117F
    Text: Signetics Memories - Bipolar Ram N82S16, N82S116, N82S17, N82S117 - 2 5 6 Bit Ram 256 x 1 C O N N E C T IO N D IA G R A M G E N E R A L D E S C R IP T IO N T he 8 2 S 1 6 / 1 16 and 8 2 S 1 7 / 1 17 are read/write m e m ory arrays w hich feature either open collector or -tri-state o utput optio ns


    OCR Scan     		PDF N82S16, N82S116, N82S17, N82S117 82S16/116 82S17/117 25jiA 100juA 82S16 N82S16N N82S116N 82S17 "pin compatible" N82S16 82S17 N82S17 82S116 S82S16 N82S117F

    82S16

    Abstract: 82S17 N82S16F N82S17F S82S16F S82S17F
    Text: M AY 1982 BIPOLAR M E M O R Y DIVISION 256-BIT BIPOLAR RAM 256 x 1 DESCRIPTION The 82S16 and 82S17 are R ea d /W rite m em ory a rrays w hich fe a tu re e ith e r open c o lle c to r or 3-sta te o u tp u t o p tio n s fo r o p ­ tim iz a tio n o f w ord e xp a n sio n in bused


    OCR Scan     		PDF 256-BIT 82S16 /82S17 82S16 82S17 N82S16F N82S17F S82S16F S82S17F

    74s188 programming

    Abstract: 74S471 N82S06 74S470 dip18 package str 52100 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 74S472 PROM PROGRAMMING 8080a 74S287 programming instructions
    Text: The E ngineering Staff of TEXAS INSTRUMENTS INCORPORATED Semiconductor Memory Data Book y for \ T exas In Design Engineers s t r u m e n t s >le of Contents • Alphanumeric Index • GENERAL INFORMATION Selection Guides • Glossary INTERCHANGEABILITY GUIDE


    OCR Scan     		PDF 38510/MACH MIL-M-38510 74s188 programming 74S471 N82S06 74S470 dip18 package str 52100 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 74S472 PROM PROGRAMMING 8080a 74S287 programming instructions

    6301-1 prom

    Abstract: 3622 prom mmi 3601 PROM 3601 intel 3601 PROM PROM intel 3601 9344C N82S141 74S189 N82S137
    Text: BIPOLAR MEMORY DIVISION MAY 1982 8192-BIT BIPOLAR PROM 1024 x 8 82HS181 /82HS181A (T.S.) DESCRIPTION FEATURES The 82HS181 is fie ld p rog ra m m a b le , w h ich m eans th a t cu s to m p a tte rn s are im ­ m e d ia te ly a va ila b le by fo llo w in g th e fu s in g


    OCR Scan     		PDF 8192-BIT 1024x8) 82HS181/82HS181A 82HS181 N82HS185 N82S25 N82S16 TBP18SA030J, 6301-1 prom 3622 prom mmi 3601 PROM 3601 intel 3601 PROM PROM intel 3601 9344C N82S141 74S189 N82S137

    N82S191

    Abstract: 6301-1 prom 82S191 SIGNETICS prom 6331-1 PROM intel 3601 SIGNETICS prom n82s141 74S200 HM76161-5 93427C
    Text: MAY 1982 BIPOLAR MEMORY DIVISION 16,384-BIT BIPOLAR PROM 2048 X 8 DESCRIPTION The 82S191 Is field programmable, which means that custom patterns are Immediate­ ly available by following the fusing proce­ dure given in this data manual. The 82S191 is supplied with all outputs at a logical low.


    OCR Scan     		PDF 384-BIT 2048x8) 82S191 82S191 N82S191 N82HS185 N82S25 N82S16 6301-1 prom SIGNETICS prom 6331-1 PROM intel 3601 SIGNETICS prom n82s141 74S200 HM76161-5 93427C

    N82S141

    Abstract: 93427c 6331-1 N82S137 mmi 6301-1 74S200 N82S129 74S206 MMI 6341-1 AM27S29C
    Text: MAY 1982 BIPOLAR MEMORY DIVISION 8 1 92-BIT BIPOLAR PROM 2 0 4 8 x 4 _ 82HS485/82HS185A (T.S.) DESCRIPTION FEATURES The 82HS185 is fie ld program m able, vihich means th a t cu sto m patte rn s are im m ed iate ­ ly available by fo llo w in g th e fu sin g p roce ­


    OCR Scan     		PDF 8192-BIT 2048x4) 82HS185/82HS185A 82HS185 N82HS185 N82S25 N82S16 TBP18SA030J, N82S141 93427c 6331-1 N82S137 mmi 6301-1 74S200 N82S129 74S206 MMI 6341-1 AM27S29C

    THERMISTORS nsp 037

    Abstract: Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032
    Text: INDEX OF COMPONENTS A Section/Page No. A.C. Adaptor. Adaptor Kits BNC e tc . Adhesive Tapes. Adhesives, Various. Aerosols.


    OCR Scan     		PDF 200X300X360m THERMISTORS nsp 037 Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032

    TCA965 equivalent

    Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
    Text: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated


    OCR Scan     		PDF DG211. DG300 DG308 DG211 TCA965 equivalent ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401

    N82S181

    Abstract: 82S181 N82S141 74S200 mmi 3601 6331-1 prom tbp24sa10 93427C n82s147 MMI 6330
    Text: MAY 1982 BIPOLAR MEMORY DIVISION 8192-BIT BIPOLAR PROM 1024 x 8 DESCRIPTION FEATURES The 82S180 and 82S181 are field program­ mable, which means that custom patterns are immediately available by follow ing the fusing procedure given in this data manual.


    OCR Scan     		PDF 8192-BIT 1024x8) 82S180 /82S181 82S180 82S181 N82S181 N82S141 74S200 mmi 3601 6331-1 prom tbp24sa10 93427C n82s147 MMI 6330

    GFB7400D

    Abstract: FEY101B TCA290A Rifa pmr 2026 EF184 ORP52 Mullard Mullard quick reference guide GZF1200 ITT A2610 YD 6409
    Text: AN INTRODUCTION TO: Cartwright ELECTRONIC COMPONENTS 517 LAWMOOR STREET DIXONS BLAZES INDUSTRIAL ESTATE GLASGOW G5 041-429 7771 Cartwright Electronic Components started trading in April, 1971 as the electronics division of John T. Cartwright & Sons ERD North Ltd . From very modest


    OCR Scan     		PDF

    FZH 191

    Abstract: FZJ 101 FZH 261 fzh 111 fzh 171 FZH111 FZH 101 FZH 161 fzh 141 fzh 281
    Text: Elektronik. Wir bauen die Elemente. • VflLVO Professionelle Integrierte Schaltungen, Mikroprozessoren Produktprogramm Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die M ikroelektronik - entwickelt sich im m er rascher zum M otor für eine


    OCR Scan     		PDF Integrie8510. FZH 191 FZJ 101 FZH 261 fzh 111 fzh 171 FZH111 FZH 101 FZH 161 fzh 141 fzh 281