NA52W PNP Search Results

NA52W PNP Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SA1213		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini
2SA1943		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-230 V / IC=-15 A / hFE=55~160 / VCE(sat)=-3.0 V / TO-3P(L)
TTA012		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini
TTA004B		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-160 V / IC=-1.5 A / hFE=140~280 / VCE(sat)=-0.5 V / TO-126N
TTA2070		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-1 A / hFE=200~500 / VCE(sat)=-0.20V / tf=90 ns / PW-Mini

NA52W PNP Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
tip320 Abstract: MJ032C 9t18 80586 MJ032 4050gg diode hitachi MJE-371 BOT32 MJE371 Text: POWER SILICON PNP Item Part Number Number I C 5 10 >= 20 80582 80940 80940 80940 80940F 80940F 2N6419 2N6419 ~~~~~7 25 30 2S81215 80T30DF 80T320F TIP320 80942 80942 80942 80942F ~~~~~~5 35 40 80X16 80X16 TIP32E TIP32E TIP32E TIP32F TIP32F TIP32F +~~~~;~g	Original	O-126var O-126 O-220 O-127var 127var 12Gvar 220A8 tip320 MJ032C 9t18 80586 MJ032 4050gg diode hitachi MJE-371 BOT32 MJE371	PDF
NA51 transistor Abstract: na52 transistor BV 726 C 1 Converter NA52W pnp NA52W BV 726 C Converter na51 npn BV 726 C na52 power transistor na51 Text: NATL SEMICOND {DISCRETE} 6501130 NATL CL Z CL CÎ ~2ö SEMICOND, DE I tS0113Q 0035573 T 28C DISCRETE CT1 National ÉSA Semiconductor 35573 - f - 3 in < z r\ Z Q. 10 < NA51 (NPN) 3.5Am p complementary pow er transistors NA52(PNP) features PH packages and lead coding	OCR Scan	tS0113Q O-126 O-220 T0-220 35S7b NB021EY NB122EY NB112EY NB312E NA51 transistor na52 transistor BV 726 C 1 Converter NA52W pnp NA52W BV 726 C Converter na51 npn BV 726 C na52 power transistor na51	PDF
NA51 transistor Abstract: NA51W power transistor na51 na52 transistor NA52W NA52W pnp na51 NA52U na52 na51 npn Text: NATL SEMICOND {DISCRETE} 6501130 CL Z CL NATL ~2ö SEMICOND, DE I tS0113Q 0035573 T 28C DISCRETE CT1 National ÉSA Semiconductor 35573 - f - 3 C Î in < z r\ Z Q. 10 < NA51 (NPN) NA52(PNP) 3 .5 A m p com plem entary p o w e r tra n s is to rs features [T I packages and lead coding	OCR Scan	tSD113D O-126 T0-220 O-126 Q03SS7b 10iiF 33-If NB021EY NB122EY NR001E NA51 transistor NA51W power transistor na51 na52 transistor NA52W NA52W pnp na51 NA52U na52 na51 npn	PDF
NA51W Abstract: NA52W NB313Y NA52W pnp 35604 NB311 NB312 NB313 NB321 NB322 Text: NB311,312,313 NPN , NB321,3 2 2 ,323(PNP) NATL SEUICOND {DISCRETE} 6501130 NATL ifl EMICOND, (DISCRETE) 28C National Semiconductor r - 35601 n - 2 , } 3 ^ 0 - 7 NB311, 312, 313 (NPN) * , NB321, 3 2 2,3 N P ) 1,5ArnP com plem entary pow er drivers 2 ,3 23(P	OCR Scan	bSD113D NB311, NB321, andTO-202 b5D113D NB313Y" NB022EY NR001E NB113EY NA51W NA52W NB313Y NA52W pnp 35604 NB311 NB312 NB313 NB321 NB322	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF