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    onsemi NDS9956A

    MOSFET 2N-CH 30V 3.7A 8SOIC
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    National Semiconductor Corporation NDS9956A

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    NDS9956 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NDS9956 Fairchild Semiconductor Length/Height 1.75 mm Width 4.05 mm Depth 5.2 mm Power dissipation 2.5 W Transistor polarity N Channel (Dual) Current Id cont. 3.5 A Current Idm pulse 14 A Pitch row 6.3 mm c Original PDF
    NDS9956 National Semiconductor Power MOSFETS SOIC-8 Dual/Single DMOS Scan PDF
    NDS9956A Fairchild Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS9956A Fairchild Semiconductor Dual N-Channel Enhancement Mode Field Effect Trans Original PDF
    NDS9956A Fairchild Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS9956A Unknown Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS9956A Toshiba Power MOSFETs Cross Reference Guide Original PDF
    NDS9956A National Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Scan PDF
    NDS9956A_NL Fairchild Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF

    NDS9956 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NDS9956A

    Abstract: No abstract text available
    Text: February 1996 NDS9956A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


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    PDF NDS9956A NDS9956A

    NDS9956A

    Abstract: No abstract text available
    Text: N February 1996 NDS9956A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density


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    PDF NDS9956A NDS9956A

    Untitled

    Abstract: No abstract text available
    Text: February 1996 NDS9956A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


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    PDF NDS9956A

    NDS9956A

    Abstract: F011 F63TNR F852 FDS9953A L86Z CBVK741B019
    Text: February 1996 NDS9956A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original
    PDF NDS9956A NDS9956A F011 F63TNR F852 FDS9953A L86Z CBVK741B019

    NDS9956A

    Abstract: No abstract text available
    Text: February 1996 NDS9956A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


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    PDF NDS9956A NDS9956A

    mosfet cross reference

    Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local


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    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


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    PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    R-T curves RJC

    Abstract: motorola application note AN-569 tesec DV240 AN1028 AN-569 DV240 NDS9956
    Text: AN1028 April, 1996 Maximum Power Enhancement Techniques for SOT-223 Power MOSFETs Alan Li, Brij Mohan, Steve Sapp, Izak Bencuya, Linh Hong 1. Introduction As packages become smaller, achieving efficient thermal performance for power applications requires that the designers employ new methods of meliorating the heat flow out of devices. Thus


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    PDF AN1028 OT-223 OT223 R-T curves RJC motorola application note AN-569 tesec DV240 AN1028 AN-569 DV240 NDS9956

    tesec DV240

    Abstract: AN1027 AN-569 DV240 NDS9956
    Text: AN1027 April, 1996 Maximum Power Enhancement Techniques for SuperSOTTM-8 Power MOSFETs Alan Li, Brij Mohan, Steve Sapp, Izak Bencuya, Linh Hong 1. Introduction As packages become smaller, achieving efficient thermal performance for power applications requires that the designers employ new methods of meliorating the heat flow out of devices. Thus


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    PDF AN1027 tesec DV240 AN1027 AN-569 DV240 NDS9956

    BC1482-ND

    Abstract: 0603 smd CAPACITOR CAPACITOR 33PF smd schottky diode 82 NTC Thermistor smd 10k 0603 2.1mm DC power jack SAMTEC smd capacitor pot 10K ohm 22pf smd capacitor smd schottky diode s4
    Text: 2400 Vendor Part # Digikey 0 490-1370-2-ND 1 490-1370-2-ND 2 490-1382-2-ND 1 490-1392-6-ND 2 PCC180CNTR-ND 2 PCC220CNTR-ND 2 PCC330ACVTR-ND 2 PCC680ACVTR-NDD 1 PCC103BNTR-ND 17 PCC1828TR-ND 1 PCC1816TR-ND 2 399-1586-2-ND 1 399-3029-2-ND 2 PCE3338TR-ND Value


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    PDF 490-1370-2-ND 490-1382-2-ND 490-1392-6-ND PCC180CNTR-ND PCC220CNTR-ND PCC330ACVTR-ND PCC680ACVTR-NDD PCC103BNTR-ND PCC1828TR-ND BC1482-ND 0603 smd CAPACITOR CAPACITOR 33PF smd schottky diode 82 NTC Thermistor smd 10k 0603 2.1mm DC power jack SAMTEC smd capacitor pot 10K ohm 22pf smd capacitor smd schottky diode s4

    REG711-5

    Abstract: NDS9956A J4-14 RS232 MAX202 j316 F1 J37 M30280F J416
    Text: 5 4 3 2 1 DVDD_3.3V C20 0.22uF DVDD_5.0V Power Source Select 6 8 GND 4 C19 2.2uF + REG711-5.0 R25 10k 1 JP2-1 14 7 T1OUT T2OUT 13 8 R1IN R2IN RS232_OUT RS232_IN J2-4 RS232_RTS J2-5 2 C1+ 1 C1C2+ 3 4 C2- 5 T1IN T2IN 11 10 R1OUT R2OUT 12 9 VCC V- J2-7 J2-6 RS232 POWER


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    PDF REG711-5 J2-20 J2-11 J2-10 J1-20 J1-17 J1-16 J4-20 J4-19 MAX202 NDS9956A J4-14 RS232 MAX202 j316 F1 J37 M30280F J416

    Diode BAY 61

    Abstract: irl3803 equivalent Si4425DY equivalent fds6680a equivalent ITF87052SVT1 HUF76132P3 HUF76132S3S HUF76132SK8 HUF76137P3 HUF76139P3
    Text: LC-00011.1 r2 8/24/00 8:23 PM Page 1 www.intersil.com MOSFETs MOSFETs for Computer Desktop, Servers and Workstations Desktop Power Solutions 30V LOGIC LEVEL Part No. Polarity HUF76145P3 N HUF76145S3S N HUF76143P3 N HUF76143S3S N HUF76139P3 N HUF76139S3S N


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    PDF LC-00011 HUF76145P3 HUF76145S3S HUF76143P3 HUF76143S3S HUF76139P3 HUF76139S3S HUF76137P3 HUF76137S3S HUF76132P3 Diode BAY 61 irl3803 equivalent Si4425DY equivalent fds6680a equivalent ITF87052SVT1 HUF76132P3 HUF76132S3S HUF76132SK8 HUF76137P3 HUF76139P3

    FDC6331

    Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
    Text: Discrete Temperature range Software version Revision date 2N7002 SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A 2N7002MTF SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A BS170 TO-92-3 Electrical 25°C to 125°C Orcad 9.1 Mar 22, 2002 BSS123 SOT-23-3


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    PDF 2N7002 2N7002MTF BS170 BSS123 BSS138 BSS84 FDB045AN08A0 FDB2532 FDB3632 FDB3652 FDC6331 fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305

    R-T curves RJC

    Abstract: AN1026 AN-569 DV240 NDS9956
    Text: N 2. Theory Alan Li, Brij Mohan, Steve Sapp, Izak Bencuya, Linh Hong When a device operates in a system under the steady-state condition, the maximum power dissipation is determined by the maximum junction temperature rating, the ambient temperature, and the junction-to-ambient


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    PDF

    TCA780

    Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
    Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP


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    PDF 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    IRF9310

    Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross Reference lists MOSFETs by either industry standard part number or by manufacturer’s part number for which there is an ON Semiconductor nearest or similar replacement. For devices not listed, or for additional


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    PDF device2176 r14153 CR108/D IRF9310 mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


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    9956A

    Abstract: No abstract text available
    Text: FAIRCHILD February 1996 SEM ICONDUCTO R NDS9956A Dual N-Charmel Enhancement Mode Field Effect Transistor General Description Features T h e s e N -C hannel en hance m en t m o de pow er field effect tra nsistors are produced using Fairchild's proprietary, high


    OCR Scan
    PDF NDS9956A 9956A

    Untitled

    Abstract: No abstract text available
    Text: February 1996 N NDS9956A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density


    OCR Scan
    PDF NDS9956A NDS9956A 193tQ

    NDS9956A

    Abstract: No abstract text available
    Text: National Semiconductor” M ay 1996 NDS9956A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancem ent m ode p ow er field effect tran sisto rs are produced using National's p ro p rie ta ry, high cell density, DMOS technology.


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    PDF NDS9956A b5G113G DD4D047 NDS9956A

    NDS9956A

    Abstract: so8 LD3 Transistor dj rw
    Text: February 1996 N NDS9956A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density


    OCR Scan
    PDF NDS9956A NDS9956A 0D33347 so8 LD3 Transistor dj rw

    601lt

    Abstract: Complementary MOSFET Half Bridge NDS351AN MDs9933 NDS331N NDS356 NDS9936 NDS9952A FDV302P
    Text: Discrete Power and Signal Technologies Fairchild Sem iconductor Selection Guides Surface Mount Power MOSFETs Part Num ber v 3S IV _ J « L 'd A) _ " P i ' I I ' (W ) ¡Remarks P art V0S Num ber (V) iV t M » W w t u iv * » 45V Id (A) 2IV i Po j (W ) I Remarks |


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    PDF S8426A* NQS8426t NDS8425 NDS8926 NDS9925A NDS8410A NDS8410Î NDS9410A NOS8936 NDS9936 601lt Complementary MOSFET Half Bridge NDS351AN MDs9933 NDS331N NDS356 NDS9952A FDV302P

    Untitled

    Abstract: No abstract text available
    Text: S E M IC O N D U C T O R w w w .fa irc h ild s e m i.c o m tm RC5060 ACPI Switch Controller Features Applications • Implements ACPI control with PWROK, SLP_S3# and • Camino Platform ACPI Controller • Whitney Platform ACPI Controller SLP_S5# Description


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    PDF RC5060 RC5060 DS30005057