The Japanese Transistor Manual 1981
Abstract: NE32484A NE32484A-SL NE32484A-T1 NE32484A-T1A
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
|
PDF
|
The Japanese Transistor Manual 1981
Abstract: japanese transistor manual 1981 NEC Ga FET marking L K 2645 transistor NE32484A NE32484A-SL NE32484A-T1 NE32484A-T1A NEC 3552 nec gaas fet marking
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE32484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent
|
Original
|
NE32484A
NE32484A
NE32484A-SL
The Japanese Transistor Manual 1981
japanese transistor manual 1981
NEC Ga FET marking L
K 2645 transistor
NE32484A-SL
NE32484A-T1
NE32484A-T1A
NEC 3552
nec gaas fet marking
|
PDF
|
NE32484AS
Abstract: NE32484A NE32484A-SL NE32484A-T1 FET 4812
Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32484A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA FEATURES 1.4 • HIGH ASSOCIATED GAIN: 11 dB typical at 12 GHz 24 • LG = 0.25 µm, WG = 200 µm • LOW COST METAL/CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE
|
Original
|
NE32484A
NE32484A
NE32484A-SL.
24-Hour
NE32484AS
NE32484A-SL
NE32484A-T1
FET 4812
|
PDF
|
NE32484A
Abstract: NE32484AS NE32484A-SL NE32484A-T1 1S2118
Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32484A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA FEATURES 1.4 • HIGH ASSOCIATED GAIN: 11 dB typical at 12 GHz 24 • LG = 0.25 µm, WG = 200 µm • LOW COST METAL/CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE
|
Original
|
NE32484A
NE32484A
NE32484A-SL.
24-Hour
NE32484AS
NE32484A-SL
NE32484A-T1
1S2118
|
PDF
|
NE32484A
Abstract: NE32484AS NE32484A-SL NE32484A-T1
Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32484A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA FEATURES 1.4 • HIGH ASSOCIATED GAIN: 11 dB typical at 12 GHz 24 1.2 21 • LG = 0.25 µm, WG = 200 µm • LOW COST METAL/CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE
|
Original
|
NE32484A
NE32484A
NE32484A-SL.
24-Hour
NE32484AS
NE32484A-SL
NE32484A-T1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32684A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, I ds = 10 mA FEATURES VERY LOW NOISE FIGURE: 0.5 dB typical at 12 GHz HGH ASSOCIATED GAIN: n 1 .5 dB Typical at 12 GHz _ CO T> La s 0.20 pm, Wa = 200 im
|
OCR Scan
|
NE32684A
E32684A
IS12I
IS12S21I
NE32684A
NE32484AS
NE32484A-T1
NE32684A-SL.
|
PDF
|
GLDS
Abstract: No abstract text available
Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32484A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, I ds = 10 mA FEATURES • VERY LOW NOISE FIGURE: 0 .6 dB typical at 12 G H z 24 • HIGH ASSOCIATED GAIN: 21 11 dB typical at 12 G H z • L g = 0.25 nm, W g = 200 nm
|
OCR Scan
|
NE32484A
resul83
IS12I
IS22I2
IS12S21I
NE32484AS
NE32484A-T1
NE32484A-SL.
GLDS
|
PDF
|
TH 2066.4
Abstract: 13811
Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32484A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, Ids = 10 mA FEATURES • VERY LOW NOISE FIGURE: 0.6 dB typical at 12 GHz 24 • HIGH ASSOCIATED GAIN: 11 dB typical at 12 GHz m • Lg = 0.25 [im, W g = 200 [im
|
OCR Scan
|
NE32484A
NE32484Ais
NE32484AS
NE32484A-T1
NE32484A-SL.
24-Hour
TH 2066.4
13811
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32484A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, I d s = 10 mA FEATURES • VERY LOW NOISE FIGURE: 0.6 dB typical at 12 GHz • HIGH ASSOCIATED GAIN: 11 dB typical at 12 GHz • Lg = 0.25 jam, W g = 200 irn
|
OCR Scan
|
NE32484A
TheNE32484Ais
NE32484AS
E32484A-T1
NE32484A-SL.
24-Hour
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32484A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V d s = 2 V, I d s = 10 mA FEATURES VERY LOW NOISE FIGURE: 0.6 dB typical at 12 GHz 24 HIGH ASSOCIATED GAIN: 11 dB typical at 12 GHz 21 L g = 0.25 jim , W g = 200 |im
|
OCR Scan
|
NE32484A
NE32484A
NE32484AS
NE32484A-T1
NE32484A-SL.
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32484A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vos = 2 V, Ids = 10 mA FEATURES • VERY LOW NOISE FIGURE: 0.6 dB typical at 12 GHz • HIGH ASSOCIATED GAIN: 11 dB typical at 12 GHz m T3 • Lg = 0.25 |im, W q = 200 |im
|
OCR Scan
|
NE32484A
E32484Ais
IS12I
IS12S21I
NE32484AS
NE32484A-T1
NE32484A-SL.
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32484A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, I ds = 10 mA FEATURES • VERY LOW NOISE FIGURE: 0.6 dB typical at 12 GHz • HIGH ASSOCIATED GAIN: 11 dB typical at 12 GHz m • Lg = 0.25 |im, Wg = 200 urn
|
OCR Scan
|
NE32484A
E32484A
NE32484AS
NE32484A-T1
NE32484A-SL.
L427525
|
PDF
|
