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    NE76184AS Search Results

    NE76184AS Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE76184AS NEC GENERAL PURPOSE L TO X-BAND GaAs MESFET Original PDF
    NE76184A-SL NEC GENERAL PURPOSE FET N-CHANNEL GaAs MES FET Original PDF

    NE76184AS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NE76184AS

    Abstract: x-band power transistor NE76184A-SL NE76184A-TI
    Text: GENERAL PURPOSE L TO X-BAND GaAs MESFET NE76184AS NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA FEATURES 24 • HIGH ASSOCIATED GAIN: 12 dB typical at 4 GHz • LG = 1.0 µm, WG = 400 µm • LOW COST METAL/CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE


    Original     		PDF NE76184AS NE76184AS NE76184A-TI NE76184A-SL 24-Hour x-band power transistor NE76184A-SL NE76184A-TI

    transistor NEC D 587

    Abstract: NE76184A NE76184A-SL NE76184A-T1 NE76184A-T1A 149-8 MAG
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    TC-2303

    Abstract: NEC 3377 NE76184A transistor NEC D 582 transistor NEC D 587 NE76184A-SL NE76184A-T1 NE76184A-T1A p1085
    Text: DATA SHEET GaAs MES FET NE76184A GENERAL PURPOSE FET N-CHANNEL GaAs MES FET DESCRIPTION NE76184A is a N-channel GaAs MES FET housed in ceramic package. The device is fabricated by ion implantation for improved RF and DC performance reliability and uniformity. Its


    Original     		PDF NE76184A NE76184A NE76184A-SL NE76184A-T1 NE76184A-T1A TC-2303 NEC 3377 transistor NEC D 582 transistor NEC D 587 NE76184A-SL NE76184A-T1 NE76184A-T1A p1085

    SG 2368

    Abstract: LS 2027 audio amp c 2688 nec LS 2027 amp
    Text: DATA SHEET GaAs MES FET NE76184A GENERAL PURPOSE FET N-CHANNEL GaAs MES FET DESCRIPTION N E76184A is a N-channel GaAs MES FET housed in ce­ ramic package. The device is fabricated by ion im plantation for im proved RF and DC perform ance reliability and uniform ity. Its


    OCR Scan     		PDF NE76184A NE76184A NE76184A-SL NE76184A-T1 NE76184A-T1A SG 2368 LS 2027 audio amp c 2688 nec LS 2027 amp

    ne76184a

    Abstract: No abstract text available
    Text: GENERAL PURPOSE L TO X-BAND GaAs MESFET FEATURES NE76184A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 3 V, Id s = 10 m A L O W N O IS E F IG U R E : 0.8 dB typical at 4 GHz 24 H IG H A S S O C IA T E D G A IN : 21 12 dB typical at 4 GHz 18 L g = 1.0 tu n , W g = 4 0 0 jim


    OCR Scan     		PDF NE76184A NE76184A S12S21| 0QL5522 NE76184AS NE76184A-TI NE76184A-SL b427525

    76184a

    Abstract: NE76184A/CEL
    Text: GENERAL PURPOSE LTO X-BAND GaAs MESFET NE76184A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V d s= 3 V, Ids= 10 mA FEATURES LOW NOISE FIGURE: 0.8 dB typical at 4 GHz HIGH ASSOCIATED GAIN: 12 dB typical at 4 GHz CD ~D o z U_ L g = 1.0 jim , Wg = 4 0 0 jim


    OCR Scan     		PDF NE76184A NE76184A IS12S21I NE76184AS E76184A-TI E76184A-SL 76184a NE76184A/CEL

    NE76184A at 5 GHz

    Abstract: NE76184A
    Text: GENERAL PURPOSE L TO X-BAND GaAs MESFET NE76184A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vos = 3 V, Ids = 10 mA FEATURES LOW NOISE FIGURE: 24 0.8 dB typical at 4 GHz a> T} HIGH ASSOCIATED GAIN: 21 12 dB typical at 4 GHz 18 \£ 2 Lo s 1.0 im, Wo = 400


    OCR Scan     		PDF NE76184A NE76184A S12S21| NE76184A-SL. NE76184A at 5 GHz