P29V-2W-4
Abstract: No abstract text available
Text: NEC ELECTRONICS INC ML.E D h fW C NEC Electronics Inc. □ fc.427525 D035b23 7 D N E C E ^ M - Z^ 3 - / 5 fiPD424100 4,194,304 X 1-Bit Dynamic CMOS RAM February 1991 Description Pin Configurations The ¿/PD424100 is a fast-page dynamic RAM organized as 4,194,304 words by 1 bit and designed to operate
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OCR Scan
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D035b23
uPD424100
/PD424100
26/20-Pin
63NR-749a
P29V-2W-4
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PDF
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424100-70
Abstract: No abstract text available
Text: bM2 7 SSS 0 0 4 1 7 ^ 3 0 1 S •NECEj DATA SHEET NEC M OS INTEGRATED CIRCUIT ELECTRON D EVICE /¿PD424100-L 4M BIT DYNAMIC CMOS RAM FAST PAGE MODE DESCRIPTION The NEC ¿(PD424100-L is a 4194304-w ord by 1 bit dynam ic CM O S RAM w ith optional fast page m ode. CM OS
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OCR Scan
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PD424100-L
PD424100-L
4194304-w
/JPD424100-L
26-pin
20-pin
PD424100V
S60-00
424100-70
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PDF
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30-pin simm memory dynamic
Abstract: No abstract text available
Text: MC-424100A8 4,194,304 X 8-Bit Dynamic CMOS RAM Module NEC Electronics Inc. Description Pin Configurations The MC-424100A8 is afast-page 4,194,304-word by 8-bit dynamic RAM module designed to operate from a single + 5-volt power supply. Advanced CMOS cir
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OCR Scan
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MC-424100A8
304-word
pPD424100
16-ms
MC-424100A8
83IH-6815B
30-pin simm memory dynamic
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PDF
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424100A
Abstract: No abstract text available
Text: MC-424100A9 4,194,304 X 9-Bit Dynamic CMOS RAM Module NEC Electronics Inc. Description Pin Configurations The MC-424100A9 is a fast-page 4,194,304-word by 9-bit dynamic RAM module designed to operate from a single +5-volt power supply. Advanced CMOS circuitry, includ
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OCR Scan
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MC-424100A9
304-word
fiPD424100
16-ms
MC-424100A9
424100A
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PDF
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nec 424100
Abstract: No abstract text available
Text: M ié W W NEC Electronics Inc. JLIPD424100, 424100A/L, 42S4100A/L 4,194,304 X 1-Bit Dynamic CM O S RAM Description Features The devices listed below are fast-page dynamic RAMs organized as 4,194,304 words by 1 bit and designed to operate from a single power supply.
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OCR Scan
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JLIPD424100,
24100A/L,
42S4100A/L
424100-xx
424100-xxL
24100A-XX
42S4100A-xx
424100L-AXX
42S4100L-Axx
1PD424100,
nec 424100
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PDF
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nec 424256
Abstract: nec 424100 511000 424256 424256 nec KM41C1000 NEC 421000 m5m44c256 S4C1024 514256
Text: SIEM EN S Cross reference Memory Components 1 Mx1 256 K SIE M E N S HYB 511000 HYB 514256 HYB 514100 TO SHIBA TC 511000 TC 514256 TC 514100 HITACHI HM 511000 HM 514256 HM 514100 NEC jiP D 421000 XPD 424256 (XPD 424100 M ITSUBISHI M5M4C1000 M5M44C256 M5M514000
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M5M4C1000
MSM511000
MB81C1000
KM41C1000
MT4C1024
S4C1024
M5M44C256
MB81C4256
KM44C256
MT4C4256
nec 424256
nec 424100
511000
424256
424256 nec
NEC 421000
514256
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PDF
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SIMM 30-pin
Abstract: No abstract text available
Text: MC-424100A8 4,194,304 X 8-Bit Dynamic CMOS RAM Module NEC Electronics Inc. Description Pin Configurations The MC-424100A8 is a fast-page 4,194,304-word by 8-bit 30-Pin Leaded SIMM dynam ic RAM module designed to operate from a single + 5-volt power supply. Advanced CMOS cir
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OCR Scan
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MC-424100A8
304-word
uPD424100
30-Pin
MC-424100A8
SIMM 30-pin
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PDF
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nec 424100
Abstract: PD424100-70L
Text: NEC MOS INTEGRATED CIRCUIT juPD424100, 424100-L 4 M-BIT DYNAMIC RAM 4 M-WORD BY 1-BIT, FAST PAGE MODE Description The /iPD424100, 424100-L are 4 194 304 words by 1 bit dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.
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OCR Scan
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uPD424100
uPD424100-L
/iPD424100,
424100-L
26-pin
20-pin
/iPD424100-60
PD424100-70
iPD424100-80
nec 424100
PD424100-70L
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PDF
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Untitled
Abstract: No abstract text available
Text: MC-424100A9 4,194,304 X 9-Bit Dynamic CMOS RAM Module IH M li W NEC Electronics Inc. Description Pin Configurations The MC-424100A9 is afast-p age 4,194,304-word by 9-bit dynamic RAM module designed to operate from a single + 5-vo lt power supply. Advanced CMOS circuitry, includ
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OCR Scan
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MC-424100A9
MC-424100A9
304-word
30-Pin
PD424100
83IH-6815B
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PDF
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Untitled
Abstract: No abstract text available
Text: NEC Electronics Inc. MC-424000A9, -424100A 9 4,194,304 X 9-Bit Dynamic CMOS RAM Module Description Pin Configurations The M C -424000A 9 and the MC-424100A9 are fast-page 4,194,304-word by 9-bit dynam ic RAM modules de signed to o p e ra te from a single + 5 -v o lt power supply.
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OCR Scan
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MC-424000A9,
-424100A
-424000A
MC-424100A9
304-word
30-Pin
/JPD424100
-424100A9
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PDF
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MC-424000A9BA
Abstract: C-424000A9BA simm 30-pin 9-bit MC-424000A9
Text: jW X Y * t i M2à W NEC Electronics Inc. Description The M C-424000A9 and the M C-424100A9 are fast-page 4,194,304-word by 9-bit dynam ic RAM modules de signed to o perate from a single + 5 -v o lt power supply. Advanced CM OS circuitry, including a single-transistor
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OCR Scan
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MC-424000A9,
-424100A9
MC-424000A9
C-424100A9
304-word
PD424100
dur005
30-Pin
MC-424000A9BA)
C-424000A9BA
MC-424000A9BA
C-424000A9BA
simm 30-pin 9-bit
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PDF
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nec 424100
Abstract: upd424100 424100 424100-L upd424100-80 upd424100-80l 408L4
Text: NEC MOS INTEGRATED CIRCUII /¿ P D 4 2 4 1 0 0 , 4 2 4 1 0 0 -1 4 M-BIT DYNAMIC RAM 4 M-WORD BY 1-BIT, FAST PAGE MODE Description The fiPD 424100, 424100-L are 4 194 304 words by 1 bit dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.
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OCR Scan
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424100-L
26-pin
20-pin
uPD424100-60
uPD424100-70
uPD424100-80
uPD424100-10
uPD424100-60L
uPD424100-70L
nec 424100
upd424100
424100
upd424100-80l
408L4
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PDF
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A/M29F010B(45/70/90/MT352/CG/sigma asc 333
Abstract: No abstract text available
Text: L IÆ j W NEC Electronics Inc. HIPD424100, 4241OOA/L, 42S41OOA/L 4,194,304 x 1-Bit Dynamic CMOS RAM October 1992 Description Features The devices listed below are fast-page dynamic RAMs organized as 4,194,304 words by 1 bit and designed to operate from a single power supply.
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HIPD424100,
4241OOA/L,
42S41OOA/L
424100-xx
424100-xxL
24100A-XX
42S4100A-xx
424100L-Axx
42S4100L-Axx
A/M29F010B(45/70/90/MT352/CG/sigma asc 333
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-424000A36 SERIES 4M -WORD BY 36-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-424000A36 series is a 4 194 304 words by 36 bits dynamic RAM module on which 8 pieces of 16M DRAM uPD 4217400 and 4 pieces of 4M
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MC-424000A36
36-BIT
UPD424100)
b42752S
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PDF
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upd424100
Abstract: d424100 upd424100la nec vw rcd 300 nec 424100 UPD424100GS
Text: F L.427525 DGHlfil? 301 H N E C E AT A SHEET NEC MOS INTEGRATED CIRCUIT PD424100 4 M-BIT DYNAMIC RAM 4 M-WORD BY 1-BIT, FAST PAGE MODE DESCRIPTION The //PD424100 ¡s a 4 194 304 w ords by 1 bit dynam ic CMOS RAM. The fast page mode capability realize high speed access and low power consum ption.
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OCR Scan
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uPD424100
//uPD424100
26-pin
20-pin
uPD424100-60
/iuPD424100-70
uPD424100-80
iuPD424100-10
190process
d424100
upd424100la
nec vw rcd 300
nec 424100
UPD424100GS
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PDF
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41C1000
Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258
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OCR Scan
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41C256
41C257
41C258
41C464
41C466
41C1000
44C256
44C258
44C1002
TC51257
fujitsu 814100
TC 55464 toshiba
HN62304
hn623257
658128
816b
hn62324
M7202A
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PDF
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K93C46
Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257
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OCR Scan
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416C256
14800A
14900A
514170B
514280B
KM23C16000G
KM23C16100G
KM23C16000FP
KM23C16100FP
HN624017FB
K93C46
93cs46n
MB832001
hn62308
41C1000
93C46LN
41464
hn623257
HM63832
DT71256
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PDF
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nec 424100
Abstract: 424100 nec v70 LA80 pd424100
Text: N E C Electronics Inc. JIPD424100, 424100A/L, 42S4100A/L 4,194,304 X 1-Bit Dynamic CMOS RAM Description Features .Erf W The devices listed below are fast-page dynamic RAMs organized as 4,194,304 words by 1 bit and designed to operate from a single power supply.
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OCR Scan
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uPD424100
uPD424100A/L
uPD42S4100A/L
424100-xx
424100-xxL
24100A-XX
42S4100A-xx
424100L-AXX
42S4100L-Axx
pPD424100,
nec 424100
424100
nec v70
LA80
pd424100
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PDF
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MW-66
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-424000A32, 424000A36 SERIES 4 M-WORD BY 32-BIT, 4 M-WORD BY 36-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-424000A32 series is a 4,194,304 words by 32 bits dynam ic RAM m odule on which 8 pieces o f 16 M DRAM: /jPD4217400 are assembled.
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OCR Scan
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MC-424000A32,
424000A36
32-BIT,
36-BIT
MC-424000A32
uPD4217400
MC-424000A36
iPD4217400
PD424100
M72B-S0A47
MW-66
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET / MOS INTEGRATED CIRCUIT MC-428000A32, 428000A36 SERIES 8 M-WORD BY 32-BIT, 8 M-WORD BY 36-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-428000A32 series is a 8,388,608 w ords by 32 bits dynamic R A M module on which 16 pieces of 16 M DRA M : /¿PD4217400 are assembled.
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OCR Scan
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MC-428000A32,
428000A36
32-BIT,
36-BIT
MC-428000A32
PD4217400
MC-428000A36
jiPD424100
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PDF
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41C464
Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page
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OCR Scan
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41C256
41C257
41C258
41C464
41C466
41C1000
41C1002
44C256
44C258
41C4000
TC55B8128
424170 NEC
CY70199
44C1000
IOT7164
HN62308BP
HN62404P
TC5116100
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PDF
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NEC D2732
Abstract: 41C1000 41256 81c4256 6264 SRAM 44256 dram NEC 2732 nec 4217400 814400 Texas Instruments eprom 2732
Text: New Page 1 DRAM ORGANIZATION/ DENSITY FUJISTU GOLDSTAR HITACHI HYNDAI MB GM HM HY 256K x 1 256K 81256 71C256 51256 MICRON MT 53C256 1256 MITSUBISHI M5M 4256 1M x 1(1M) 81C1000 71C1000 511000 531000 4C1024 41000 256K x 4(1M) 81C4256 71C4256 514256 534256 4C4256
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Original
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71C256
53C256
81C1000
71C1000
4C1024
81C4256
71C4256
4C4256
71C4400
4C4001
NEC D2732
41C1000
41256
6264 SRAM
44256 dram
NEC 2732
nec 4217400
814400
Texas Instruments eprom 2732
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PDF
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Fuse T3A
Abstract: IEC536 DIN IEC 68-2-2 EMC 2428 power supply connector EN61000-6-2 EN61000-6-4 IEC53 EN6100062 UL60079-15
Text: 4 Power Supplies SDP Low Power DIN Rail Series The compact, lightweight DIN Rail power supplies come in output voltages from 5 to 48 Vdc and power ratings of up to 100 Watts. These extra small, efficient units are designed specifically for the industrial environment. Each
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Original
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design024)
EN60950)
IEC529)
IEC536)
EN60950,
UL60079-15
UL508
93/68/EEC)
EN61000-3-2,
Fuse T3A
IEC536
DIN IEC 68-2-2
EMC 2428 power supply connector
EN61000-6-2
EN61000-6-4
IEC53
EN6100062
UL60079-15
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PDF
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IEC536
Abstract: E137632 Fuse T3A EN61000-6-2
Text: 3 Power Supplies SDP Low Power DIN Rail Series The compact, lightweight DIN Rail power supplies come in output voltages from 5 to 48 Vdc and power ratings of up to 100 Watts. These extra small, efficient units are designed specifically for the industrial environment. Each
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Original
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Applicat60
SR-332,
EN61000-6-3
EN61000-6-4)
EN61000-6-2
EN61000-6-1)
EN55024)
EN60950)
IEC529)
IEC536)
IEC536
E137632
Fuse T3A
EN61000-6-2
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PDF
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