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    NEC JAPAN 567 Search Results

    NEC JAPAN 567 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CC1100ERGPT Texas Instruments Low-Power Sub-1GHz RF Transceiver for China and Japan frequency bands 20-QFN -40 to 85 Visit Texas Instruments Buy
    CC1100ERGPR Texas Instruments Low-Power Sub-1GHz RF Transceiver for China and Japan frequency bands 20-QFN -40 to 85 Visit Texas Instruments Buy
    D12320VTE20V Renesas Electronics Corporation Microcontrollers for General Purpose System Control Applications (Non Promotion), TFQFP, / Visit Renesas Electronics Corporation
    D12324SVF25V Renesas Electronics Corporation Microcontrollers for General Purpose System Control Applications (Non Promotion), FQFP, /Tray Visit Renesas Electronics Corporation
    D12373RVFQ33V Renesas Electronics Corporation Microcontrollers for General Purpose System Control Applications (Non Promotion), LQFP, /Tray Visit Renesas Electronics Corporation

    NEC JAPAN 567 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    nec 78078gf

    Abstract: 78078gf 78078Y uPD78076 uPD78076Y uPD78078 uPD78078Y uPD78P078 uPD78P078KL-T uPD78P078Y
    Text: µPD78078, 78078Y SUBSERIES 8-BIT SINGLE-CHIP MICROCONTROLLER µ PD78076 µ PD78078 µ PD78P078 NEC Corporation 1994 µ PD78076Y µ PD78078Y µ PD78P078Y Document No. U10641EJ3V0UM00 Date Published January 1997 N Printed in Japan NOTES FOR CMOS DEVICES


    Original     		PDF PD78078, 78078Y PD78076 PD78078 PD78P078 PD78076Y PD78078Y PD78P078Y U10641EJ3V0UM00 nec 78078gf 78078gf uPD78076 uPD78076Y uPD78078 uPD78078Y uPD78P078 uPD78P078KL-T uPD78P078Y

    ECU 206 7.4.5

    Abstract: VR4181 ss2a20 PD30181 lts 543 data sheet VR4102 7 segment display LTS 543 Brf12 lts 543 pin diagram LTS 543 seven segment display
    Text: User’s Manual VR4181 64-/32-bit Microprocessor µPD30181 Document No. U14272EJ1V0UMJ1 1st edition Date Published September 2000 NS CP(K)  NEC Corporation 2000  MIPS Technologies, Inc. 1998 Printed in Japan [MEMO] 2 User’s Manual U14272EJ1V0UM00


    Original     		PDF VR4181TM 64-/32-bit PD30181 U14272EJ1V0UMJ1 U14272EJ1V0UM00 ECU 206 7.4.5 VR4181 ss2a20 PD30181 lts 543 data sheet VR4102 7 segment display LTS 543 Brf12 lts 543 pin diagram LTS 543 seven segment display

    se617

    Abstract: SE641 transistor f423 sd667 transistor hh 004 transistor f422 bv0T F423 n010x L442
    Text: Block Library CMOS-9HD Family, EA-9HD Family CMOS Gate Array, CMOS Embedded Array Ver.6.0 Document No. Date Published A13052EJ6V0BL00 6th edition December 2000 NS CP(K) NEC Corporation 1997 Printed in Japan [MEMO] Block Library A13052EJ6V0BL Summary of Contents


    Original     		PDF A13052EJ6V0BL00 A13052EJ6V0BL se617 SE641 transistor f423 sd667 transistor hh 004 transistor f422 bv0T F423 n010x L442

    UPD75P518GF-3b9

    Abstract: E 13007-2 IC-2672 UPD75P518GF uPD75P518 13007-2 WM7 SMD transistor marking code pD75P518GF SMD TRANSISTOR MARKING code wm2 transistor 2n 7849
    Text: USER'S MANUAL µPD75518 4 BIT SINGLE-CHIP MICROCOMPUTER µPD75517 µPD75518 µPD75P518 NEC Corporation 1990 Document No. IEU-1305E O. D. No. IEU-743E Date Published January 1995 P Printed in Japan Cautions on CMOS Devices 1 Countermeasures against static electricity for all MOSs


    Original     		PDF PD75518 PD75517 PD75P518 IEU-1305E IEU-743E) PD75518 PORT0-PORT15 UPD75P518GF-3b9 E 13007-2 IC-2672 UPD75P518GF uPD75P518 13007-2 WM7 SMD transistor marking code pD75P518GF SMD TRANSISTOR MARKING code wm2 transistor 2n 7849

    MARKING CODE A00B

    Abstract: c009 marking MARKING CODE A00E 7 segment LED display project 7SEGMENT a006 a00a Bar Display Driver LED DIODE C012 marking a004
    Text: USER’S MANUAL 60:;.3 6<67 0#6,08/$725 REFERENCE For IBM-PC/AT Series (WindowsTM Ver. V1.40 and later NEC Corporation 1996 Document No. U10181EJ3V0UM00 (2nd edition) Date Published September 1996 P Printed in Japan IBM-PC/AT is a trademark of IBM Corporation.


    Original     		PDF U10181EJ3V0UM00 MARKING CODE A00B c009 marking MARKING CODE A00E 7 segment LED display project 7SEGMENT a006 a00a Bar Display Driver LED DIODE C012 marking a004

    tip 0ff 0401 ANALOG

    Abstract: MARKING CODE A00E 1001376 16 pin 7-segment display 188 17xxxXXX
    Text: USER ’S MANUAL SM78 78K K0 SYSTE STEM M SIMULATOR REFERENCE TM For IBM-PC/AT Series Windows Ver. V1.40 and later Document No. U10181EJ3V0UM00 (2nd edition) Date Published July 1996 P NEC Corporation 1996 Printed in Japan IBM-PC/AT is a trademark of IBM Corporation.


    Original     		PDF U10181EJ3V0UM00 tip 0ff 0401 ANALOG MARKING CODE A00E 1001376 16 pin 7-segment display 188 17xxxXXX

    UPD78014

    Abstract: CC78K0 ID78K0-NS RA78K0 SM78K0 U17016EJ1V0UM
    Text: User’s Manual CC78K0 Ver. 3.60 C Compiler Language Target Device 78K0 Series Document No. U17016EJ1V0UM00 1st edition Date Published April 2004 CP(K) NEC Electronics Corporation 2004 Printed in Japan [MEMO] 2 User’s Manual U17016EJ1V0UM HP9000 series 700 is a trademark of Hewlett-Packard Company.


    Original     		PDF CC78K0 U17016EJ1V0UM00 U17016EJ1V0UM HP9000 UPD78014 ID78K0-NS RA78K0 SM78K0 U17016EJ1V0UM

    tip 0ff 0401 ANALOG

    Abstract: CC78K0 ID78K0 SM78K SM78K0 AY 5 4007
    Text: USER ’S MANUAL SM78 78K K0 SYSTE STEM M SIMULATOR REFERENCE TM For IBM-PC/AT Series Windows Ver. V1.40 and later Document No. U10181EJ3V0UM00 (2nd edition) Date Published July 1996 P NEC Corporation 1996 Printed in Japan IBM-PC/AT is a trademark of IBM Corporation.


    Original     		PDF SM78K0 U10181EJ3V0UM00 tip 0ff 0401 ANALOG CC78K0 ID78K0 SM78K SM78K0 AY 5 4007

    nec. 5.5 473

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET LASER DIODE NX6508 Series 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application.


    Original     		PDF NX6508 nec. 5.5 473

    TOSA MQW Laser diode SFP

    Abstract: sfp connector for STM-1 and STM-4 nec 470 38
    Text: PRELIMINARY DATA SHEET LASER DIODE NX8510UD Series 1 470 TO 1 610 nm FOR CWDM 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA DESCRIPTION The NX8510UD is a 1 470 to 1 610 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical


    Original     		PDF NX8510UD TOSA MQW Laser diode SFP sfp connector for STM-1 and STM-4 nec 470 38

    NX5501

    Abstract: NX5304 NX5306 NX5307 NX5504 NX6306 NX6307 NX6508 STM-16 nec. 5.5 473
    Text: PRELIMINARY DATA SHEET LASER DIODE NX6508 Series 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series are 1 470 to 1 610 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application.


    Original     		PDF NX6508 NX5501 NX5304 NX5306 NX5307 NX5504 NX6306 NX6307 STM-16 nec. 5.5 473

    NL1100

    Abstract: NL1100L nec Infrared transmitter
    Text: DATA SHEET TRANSCEIVER MODULE NL1100,NL1100L FAST SERIAL INFRARED LINK FOR IrDA DATA RATE: 2.4 k to 4.0 Mbps DESCRIPTION The NL1100 and NL1100L are Infrared Rays link units for high speed application of IrDA. Their units incorporate a high speed infrared Rays LED and an integrated photo detector with wide bandwidth amplifier.


    Original     		PDF NL1100 NL1100L NL1100L nec Infrared transmitter

    TOSA DWDM

    Abstract: NX8531NH TEC TOSA
    Text: DATA SHEET LASER DIODE NX8530NH,NX8531NH 1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE 2.5 Gb/s DIRECTLY MODULATION LIGHT SOURCE FOR DWDM APPLICATIONS DESCRIPTION The NX8530NH and NX8531NH are 1 550 nm Multiple Quantum Wells MQW structured Distributed Feed-Back (DFB) laser diode module TOSA


    Original     		PDF NX8530NH NX8531NH NX8531NH NX8530NH) NX8531NH) TOSA DWDM TEC TOSA

    NEC JAPAN 567

    Abstract: NX8563LF PX10160E
    Text: DATA SHEET LASER DIODE NX8563LF 1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE CW LIGHT SOURCE FOR DWDM APPLICATIONS DESCRIPTION The NX8563LF is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with Polarization Maintain


    Original     		PDF NX8563LF NX8563LF NEC JAPAN 567 PX10160E

    ingaasp

    Abstract: No abstract text available
    Text: DATA SHEET LASER DIODE NX8562LF 1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE CW LIGHT SOURCE FOR DWDM APPLICATIONS DESCRIPTION The NX8562LF is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with Polarization Maintain


    Original     		PDF NX8562LF NX8562LF ingaasp

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET LASER DIODE NX8508 Series 1 470 TO 1 610 nm InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE FOR 2.5 Gb/s, CWDM DESCRIPTION The NX8508 Series are 1 470 to 1 610 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode coaxial modules with an


    Original     		PDF NX8508

    NEC Ga FET marking L

    Abstract: NE76184B marking K gaas fet NEC Ga FET marking A nec gaas fet marking NEC Ga FET marking Rf nec 9000 NEC Ga FET marking V NEC Ga FET "marking V" NEC Ga FET
    Text: DATA SHEET GaAs MES FET NE76184B L to X BAND OSC N-CHANNEL GaAs MES FET DESCRIPTION NE76184B is a N-channel GaAs MES FET housed in ceramic package. The device is fabricated by ion implantation for improved RF and DC performance reliability and uniformity.


    Original     		PDF NE76184B NE76184B NE76184B-T1 NE76184B-T1A NEC Ga FET marking L marking K gaas fet NEC Ga FET marking A nec gaas fet marking NEC Ga FET marking Rf nec 9000 NEC Ga FET marking V NEC Ga FET "marking V" NEC Ga FET

    UPD75P518

    Abstract: P117H dwa 108 a uPD78350 rq 8239 ASM-010 uPD75212A uPD75268 IE-75000-R IE-75001-R
    Text: USER'S MANUAL NEC IE-75000-R/IE-75001-R IN-CIRCUIT EMULATOR Document No. EEU-1455 0. D. No. EEU-846B Date Published January 1997 N Printed in Japan USER’S MANUAL NEC IE -7 5 0 0 0 -R /IE -7 5 0 0 1 -R IN-CIRCUIT EMULATOR NEC Corporation 1993 MS-DOS^


    OCR Scan     		PDF IE-75000-R/IE-75001-R EEU-1455 EEU-846B) UPD75P518 P117H dwa 108 a uPD78350 rq 8239 ASM-010 uPD75212A uPD75268 IE-75000-R IE-75001-R

    GR 733

    Abstract: ASR12 emlC-17K m15f a h 001 AF-9703 m067 m068 IE-17K-ET RA17K uPD170xx
    Text: User’s Manual ¿íPD170xx Series 4-bit Single-chip Microcontroller Common items D ocum ent No. U 13262E J2V 0U M 00 2nd edition (P revious No. IE U -1363) Date P ublished May 1998 N CP(K) NEC Corporation 1993 Printed in Japan NEC [MEMO] 2 NOTES FOR CMOS DEVICES


    OCR Scan     		PDF uPD170xx 13262E GR 733 ASR12 emlC-17K m15f a h 001 AF-9703 m067 m068 IE-17K-ET RA17K

    Mem 5116

    Abstract: 1i3h PC10 PC11 PC13
    Text: User’s Manual 17K Series 4-bit Singlechip Microcontrollers Instructions Document No. U12986EJ2V0UM00 2nd edition (Previous No. IEU-1312) Date Published September 1997 NECCorporation 1991 Printed in Japan NEC [MEMO] The information in this document is subject to change without notice.


    OCR Scan     		PDF U12986EJ2V0UM00 IEU-1312) Mem 5116 1i3h PC10 PC11 PC13

    TRANSISTOR 5101 FG

    Abstract: j 13007-2 WM7 SMD transistor marking code MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR TRANSISTOR SMD MARKING CODE s01 smd transistor bq SAA 1025 AHL touch 1015G ELAP cm 76
    Text: NEC USER’S MANUAL J0.PD75518 4 BIT SINGLE-CHIP MICROCOMPUTER HPD75517 X P D 7 5 5 1 8 |iPD75P518 Document No. IEU-1305E (O. D. No. IEU-743E Date Published January 1995 P Printed in Japan F£C Corporation 1990 •I b427SSS 0D^S3EH 174 ■ Cautions on CM OS D evices


    OCR Scan     		PDF uPD75518 HPD75517 iPD75P518 IEU-1305E IEU-743E) b427SSS on-154 PD75518 b427525 00R57Q7 TRANSISTOR 5101 FG j 13007-2 WM7 SMD transistor marking code MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR TRANSISTOR SMD MARKING CODE s01 smd transistor bq SAA 1025 AHL touch 1015G ELAP cm 76

    0C062

    Abstract: OC062 0C032 SKE 502 triac MAC 97 AB SKE 1/17 1E71 238-356 0C026 OC025
    Text: APPLICA T/ON NOTE SEC ß PD17104 APPLICATION FÜR ELECTRIC FAN ! Document No. tEA-1261 0.0 . No. lEA-677 Date Published August 1990P Printed in Japan APPLICA T/ON NOTE NEC /¿PD171 04 APPLICATION FOR ELECTRIC FAN NEC Corporation 1990 No p a rt o f th is d o cu m e n t m ay be copied o r reproduced in any fo rm o r by any means w ith o u t th e p rio r w ritte n


    OCR Scan     		PDF uPD17104 tEA-1261 lEA-677) 1990P PD171 0C062 OC062 0C032 SKE 502 triac MAC 97 AB SKE 1/17 1E71 238-356 0C026 OC025

    OC170

    Abstract: TFK 241 NEC uPB OC171 PD71051 TB1010 IE-17K-ET tB1234 ge dsm hex ng 0C170
    Text: USER’S MANUAL I mp*""* jijjMF ^jgj sMMMI HHMI s mmm I jBT V^C. M *"" *l>® WMi aHMMiK mmm s I CL1CE-ET VERSION 1.6 Oocu^cn \ o EEU 1468 0 .0 . No. EEU 931 Date Pub.'ishcd January 1994 P Printed :n Japan NEC USER'S MANUAL IE -1 7 K -E 1 CLICE-ET VERSION 1.6


    OCR Scan     		PDF IE-17K-E1 RS-232-C. OC170 TFK 241 NEC uPB OC171 PD71051 TB1010 IE-17K-ET tB1234 ge dsm hex ng 0C170

    NEC 2561

    Abstract: nec 2561 le NEC 2561 LE 301 sem 2105 16 pin saa 1074 SAA 1061 nec 2561 4 pin cp 1099 c 945 p 331 saa 1049
    Text: PRELIMINARY DATA SHEET_ NEC GaAs MES FET NE72218 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 5.0 dB TYP. @f = 12 GHz • Gate Length : Lg = 0.8 yum recessed gate • Gate Width : Wg = 400 ym


    OCR Scan     		PDF NE72218 NE72218-T1 NE72218-T2 NEC 2561 nec 2561 le NEC 2561 LE 301 sem 2105 16 pin saa 1074 SAA 1061 nec 2561 4 pin cp 1099 c 945 p 331 saa 1049