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    NEC POWER SUPPLY Search Results

    NEC POWER SUPPLY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    NEC POWER SUPPLY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    nat7210bpd

    Abstract: NEC uPD7210 Ta 7210 p 74573 nat7210bp NAT7210 NAT7210APD uPD7210 74245 BIDIRECTIONAL transceiver ci 74245
    Text: IEEE 488.2 Controller Chip Drop-In Replacement for NEC µPD7210 NAT7210 Pin-compatible with NEC µPD7210 Software-compatible with NEC µPD7210 or TI TMS9914A controller chips Low power consumption Meets all IEEE 488.2 requirements Bus line monitoring Preferred implementation of


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    PDF PD7210 NAT7210 PD7210 TMS9914A nat7210bpd NEC uPD7210 Ta 7210 p 74573 nat7210bp NAT7210 NAT7210APD uPD7210 74245 BIDIRECTIONAL transceiver ci 74245

    pa1556ah

    Abstract: PA1501H nec PA1501H PA1556A PA1550H PA1556 PA1522H uPA1712 pa1560h 2sk3326
    Text: NEC Power MOS FET Low Voltage MOS FET Series High Voltage MOS FET Series Semi Power MOS FET MOS FET Array NEC Power MOS FET N7-L Series Low Voltage Power MOS FET Lower On-state Resistance Easier drive by 4V, 4.5V, CMOS Logic IC N5-H Series High Voltage Power MOS FET


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    PDF O-251/-252, O-220/-262 SC-96 SC-95 SC-96 OT-23) D10702EJAV0PF00 pa1556ah PA1501H nec PA1501H PA1556A PA1550H PA1556 PA1522H uPA1712 pa1560h 2sk3326

    NL10260BC19-01D

    Abstract: rgb led 30w NL10260BC19 1290H
    Text: NEC NEC LCD Technologies, Ltd. Product Number: NL10260BC19-01D 8.9-inch WSVGA for industrial application Screen size 8.9 inch 23cm diagonal Interface LVDS (RGB 8 bits each / 6 bits each) Resolution 1024(H) x 600(V) pixels Power supply voltage 3.3V Display area


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    PDF NL10260BC19-01D 300cd/m2 NL10260BC19-01D rgb led 30w NL10260BC19 1290H

    P041M-1S

    Abstract: pd416 PD4168 AOAE p041m S200N
    Text: NEC fiPD4168 8,192 X 8-BIT NMOS XRAM NEC Electronics Inc Revision 1 Description Pin Configuration The NEC^PD4168 is an 8,192 word by 8-bit NMOS XRAM designed to operate from a single +5V power supply. The NEC *<PD4168 is termed an XRAM because it Incor­ porates some of the best features of both SRAMs Nonmultiplexed addresses, simple interface requirements


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    PDF uPD4168 PD4168 mPD4168 PD4168 P041M-1S pd416 AOAE p041m S200N

    Untitled

    Abstract: No abstract text available
    Text: NEC yPD42641 4,194,304 x 1-Bit Silicon File NEC Electronics Inc. Description Pin Identification The ¿/PD42641 is a fast-page, low-power dynamic RAM organized as 4,194,304 words by 1 bit and designed to operate from a single +5-volt power supply. Advanced


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    PDF uPD42641 /PD42641 83CL-M868 lfefc-15 jiPD42641 JJPD42641 JUPD42641

    Untitled

    Abstract: No abstract text available
    Text: NEC 3.3-V olt, 0.44-M icron G ate Arrays NEC Electronics Inc. Prelim inary April 1996 Figure 1. 672-pin BGA Description NEC’s 3.3-volt QB-8 fam ily consists of ultra-highperform ance, subm icron gate arrays targeted for applications requiring high speeds and low power


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    PDF 672-pin

    Untitled

    Abstract: No abstract text available
    Text: NEC //PC324 QUAD LOW-POWER OPERATIONAL AMPLIFIER NEC Electronics Inc. Pin Configuration D escription The/iPC 324 is a quad operational am plifier designed to operate from either single or split power supplies, with very low current drain. The input common mode


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    PDF //PC324 LM324 /iPC324C //PC324G2e PC324

    2SC1600

    Abstract: NE57510 NE57500 ne575 2SC1042 2SC1642 NE57520 321E S21E 2SC164
    Text: NEC/ CALIFORNIA NEC SbE D b4S7414 00053^^ 4TS * N E C C T ^ - o s NE57500 NE57510 NE57520 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • HIGH OSCILLATOR POWER OUTPUT: 700 m W at 1.7 GHz The NE575 series of NPN silicon medium power transistors is


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    PDF b4S7414 NE57500 NE57510 NE57520 NE575 2SC1600 2SC1042 2SC1642 NE57520 321E S21E 2SC164

    UPD23C1000

    Abstract: NEC 28PIN DIP
    Text: NEC NEC Electronics Inc. pPD23C1000A 131,072 x 8-Bit Mask-Programmable CMOS ROM Description Pin Configuration The jtPD23Cl000A is a 131,072-word by 8-bit static ROM fabricated with CMOS silicon-gate technology and designed to operate from a single + 5-volt power supply.


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    PDF uPD23C1000A 072-word 28-pin pPD23C1000A JUPD23C1000A UPD23C1000 NEC 28PIN DIP

    nec 2716 eprom

    Abstract: 2364 eprom NEC 2732 pin diagram of ic 2764 pin diagram of ic 2732 2732 rom 2732 eprom Electronic Arrays 2732 memory chip ROM 2764
    Text: NEC NMUS juPD2364 NEC Electronic U.S.A. Inc. Electronic A rrays Division READ ONLY MEMORY 8192 WORDS, 8 BITS/WORD FEATURES: GENERAL DESCRIPTION: • Three Fast Access Times -450nsec -350nsec -300nsec • All Inputs and Outputs TTL Compatible • Single +5V ± 10% Power Supply


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    PDF uPD2364 iPD2364 -450ns35PC 2364-30PC 450nsec 350nsec 300nsec nec 2716 eprom 2364 eprom NEC 2732 pin diagram of ic 2764 pin diagram of ic 2732 2732 rom 2732 eprom Electronic Arrays 2732 memory chip ROM 2764

    Untitled

    Abstract: No abstract text available
    Text: JJPD23C4001E 524,288 X 8-Bit Mask-Programmable CMOS ROM NEC NEC Electronics Inc. Description Pin Configuration The /iPD23C4001 E is a 524,288-word by 8-bit static ROM fabricated with CMOS silicon-gate technology and designed to operate from a single + 5-volt power supply.


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    PDF JJPD23C4001E /iPD23C4001 288-word 600-mil, 32-pin 32-Pin fiPD23C4001E

    AS11D

    Abstract: C-41256A8 30-pin SIMM
    Text: NEC MC-41256A8 262,144 X 8-Bit Dynamic NMOS RAM Module NEC Electronics Inc. Description Pin Configuration The MC-41256A8 is a 262,144-word by 8-bit NMOS RAM module designed to operate from a single + 5-volt power supply. Advanced dynamic circuitry, including a


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    PDF MC-41256A8 30-Pin 144-word /iPD41256 MC-41256A8 83IH-6594B AS11D C-41256A8 30-pin SIMM

    Untitled

    Abstract: No abstract text available
    Text: NEC NEC Electronics Inc. JUPD23C1001E 131,072 x 8-Bit Mask-Programmable CMOS ROM Description Pin Configuration The fiPD23Cl001E is a 131,072-word by 8-bit static ROM fabricated with CMOS silicon-gate technology and de­ signed to operate from a single + 5-volt power supply.


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    PDF uPD23Cl001E 072-word 600-mil, 32-pin JUPD23C1001E fiPD23C1001E

    Untitled

    Abstract: No abstract text available
    Text: ffPD421x900/L, 42S1X900/L x = 6, 7 2,097,152 X 9-Bit Dynamic CMOS RAM NEC NEC Electronics Inc. Description The devices listed below are fast-page dynamic RAMs organized as 2M words by 9 bits and designed to operate from a single power supply. Optional features


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    PDF ffPD421x900/L, 42S1X900/L 42S16900 42S17900 jjPD421x 900/L 8T-22 pPD421x900/L,

    Untitled

    Abstract: No abstract text available
    Text: NEC NEC Electronics Inc. MC-421000A36 1,048,576 x 36-Bit Dynamic CMOS RAM Module Description Pin Configuration The MC-421000A36 is a fast-page dynamic RAM mod­ ule organized as 1,048,576 words by 36 bits and de­ signed to operate from a single +5-volt power supply.


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    PDF MC-421000A36 36-Bit MC-421000A36 -421000A OP-16 iPD421000GX iPD424400GS MC-42100M36BT7FT

    MC-421000A36

    Abstract: No abstract text available
    Text: NEC NEC Electronics Inc. MC-421000A36 1,048,576 x 36-Bit Dynamic CMOS RAM Module Description Pin Configuration The MC-421000A36 is afast-p age dynamic RAM module organized as 1,048,576 words by 36 bits and designed to o perate from a single + 5-volt power supply. Ad­


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    PDF MC-421000A36 36-Bit 83YL-7246B MC-421000A36

    8676A

    Abstract: No abstract text available
    Text: NEC pPD424101 4,194,304 X 1-Bit Dynamic CMOS RAM NEC Electronics Inc. Description Pin Identification The ¿/PD424101 is a nibble-m ode dynam ic RAM orga­ nized as 4,194,304 words by 1 bit and designed to o perate from a single + 5 -v o lt power supply. Advanced


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    PDF uPD424101 /PD424101 JUPD424101 fiPD424101 5B-16 8676A

    MC157

    Abstract: No abstract text available
    Text: NEC MC-157 262,144 x 8-Bit Dynamic CMOS RAM Module NEC Electronics Inc. Description Pin Configuration The MC-157 is a CMOS-fabricated RAM module orga­ nized as 262,144 words by 8 bits and designed to operate from a single + 5-volt power supply. Good system oper­


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    PDF MC-157 30-Pin juPD424256 MC-157 MC157

    d42s4800

    Abstract: No abstract text available
    Text: NEC NEC Electronics Inc. pPD424800A/L, 42S4800A/L 524,288 X 8-Bit Dynamic CMOS RAM Preliminary Information Description The /JPD424800A/L and /JPD42S4800A/L are fast-page dynam ic RAMs organized as 524,288 words by 8 bits and designed to o p e ra te from a single power supply.


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    PDF pPD424800A/L, 42S4800A/L /JPD424800A/L /JPD42S4800A/L 24800A 424800L 42S4800A 42S4800L d42s4800

    Untitled

    Abstract: No abstract text available
    Text: NEC KC 9 8 NEC Electronics Inc. ¿IPD70108H V20HL 16-Bit Microprocessor: Advanced, High-Performance, Low-Power, CMOS Preliminary November 1991 Description D Maskable (INT) and nonmaskable (NMI) interrupts The/jPD70108H (V20HL ) is a high-performance, 16-bit


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    PDF IPD70108H V20HL) 16-Bit The/jPD70108H V20HLâ 16-bit /JPD8088/8086 /PD70108/116 V20HL pPD8088.

    Untitled

    Abstract: No abstract text available
    Text: NEC pPD28C05 512 X 8-BIT CMOS E EPROM NEC Electronics Inc. Description Pin Configuration The juPD28C05 is an electrically erasable and program­ mable read-only memory EEPROM organized as 512 words by 8 bits. The device operates from a + 5-volt power supply and is fabricated w ith an advanced CMOS


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    PDF pPD28C05 juPD28C05 24-Pin nPD28C05 mPD28C05 /iPD28C05

    Untitled

    Abstract: No abstract text available
    Text: NEC NEC Electronics Inc. Description The juPC319 is a precision high-speed comparator designed to operate from single or split power supplies from +5 V to ±15 V. It features excellent input charac­ teristics and drive compatibilities to all popular logic


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    PDF juPC319 PC319 LM319 /yPC319 //PC319 yUPC319

    ns 16101

    Abstract: 7864A nec v80
    Text: NEC NEC Electronics Inc. fiPD4216101, 4217101 16,777,216 X 1-Bit Dynamic CMOS RAM Advance Information Description The juPD4216101 and the /JPD4217101 are nibble-mode dynamic RAMs organized as 16,777,216 words by 1 bit and designed to operate from a single +5-volt power


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    PDF uPD4216101 uPD4217101 /tPD4217101 pPD4217101 LE-60 LE-70 LE-80 LE-10 /PD4217101V-60 /PD4217101G5-60 ns 16101 7864A nec v80

    LM1010

    Abstract: d71086 5s20
    Text: NEC NEC Electronics Inc. Description The fiPD71037 is a direct memory access DMA control­ ler that provides high-speed data transfers between peripheral devices and memory for microprocessor sys­ tems. It is faster and draws less power than its predeces­


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    PDF uPD71037 64K-byte iPD71037 jttPD71037CZ-10 GB-10 LM-10 fiPD71037 JUPD71037 B-6523B B-6S22B LM1010 d71086 5s20