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onsemi NGTB20N120IHRWG IGBT TRENCH/FS 1200V 40A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NGTB20N120IHRWG	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Verical	NGTB20N120IHRWG		143		96	1 - 10 - 100 $3.7625 1000 $3.4 10000 $3.4	Buy Now
Rochester Electronics	NGTB20N120IHRWG		143		1	1 $3.2 10 $3.2 100 $3.01 1000 $2.72 10000 $2.72	Buy Now
Flip Electronics	NGTB20N120IHRWG		58			1 - 10 - 100 - 1000 - 10000 -	Get Quote

NGTB20N120IHRWG Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NGTB20N120IHRWG		On Semiconductor	IGBT 1200V 20A FS2-RC Induction Heating		Original	PDF

NGTB20N120IHRWG Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
20N120IHR Abstract: No abstract text available Text: NGTB20N120IHRWG Product Preview IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering	Original	NGTB20N120IHRWG NGTB20N120IHR/D 20N120IHR	PDF
Untitled Abstract: No abstract text available Text: NGTB20N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, provides and superior performance in demanding switching applications, and offers	Original	NGTB20N120IHRWG NGTB20N120IHR/D	PDF
Untitled Abstract: No abstract text available Text: NGTB20N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, provides and superior performance in demanding switching applications, and offers	Original	NGTB20N120IHRWG NGTB20N120IHR/D	PDF
Untitled Abstract: No abstract text available Text: NGTB20N120IHRWG Product Preview IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering	Original	NGTB20N120IHRWG NGTB20N120IHR/D	PDF
Untitled Abstract: No abstract text available Text: NGTB20N120IHRWG Product Preview IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, provides and superior performance in demanding switching applications, and offers	Original	NGTB20N120IHRWG NGTB20N120IHR/D	PDF