c2611
Abstract: BD437 8229 2SB649A 2SD669A 2SB649 2SB772 2SC3417 2SD882 BD238
Text: TO-126 PACKAGE MX MICROELECTRONICS ● Applied for power drive power switch . TYPE 2SB772 2SD882 2SB649 2SB649A 2SD669A 2SD669A 2SC3417 BD437 BD238 BD329 BD330 NPN PD OR *Tc= Ic PNP 25℃ mW (mA) PNP NPN PNP PNP NPN NPN NPN NPN PNP NPN PNP ICBO VCBO VCEO * ICEO
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Original
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O-126
2SB772
2SD882
2SB649
2SB649A
2SD669A
2SC3417
BD437
BD238
c2611
BD437
8229
2SB649A
2SD669A
2SB649
2SB772
2SC3417
2SD882
BD238
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PDF
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str 6707
Abstract: philips 23 2108 npn transistor ic str 6707 TO-202 transistor NPN BF859 BP317 D-20097 transistor d 2333 philips ltd 202
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D067 BF859 NPN high-voltage transistor Product specification Supersedes data of 1996 Dec 09 1999 Apr 14 Philips Semiconductors Product specification NPN high-voltage transistor BF859 DESCRIPTION NPN transistor in a TO-202 plastic package.
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Original
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M3D067
BF859
O-202
MBH794
O-202)
SCA63
115002/00/03/pp8
str 6707
philips 23
2108 npn transistor
ic str 6707
TO-202 transistor NPN
BF859
BP317
D-20097
transistor d 2333
philips ltd 202
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PDF
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2n2712 data sheet
Abstract: 2N3711 equivalent 2N3904 2n4058 2N2926 2N3393 2N3859A equivalent to PNP 2N2712 2N2714 2N2923
Text: Small Signal Transistors TO-92 Case TYPE NO. DESCRIPTION LEAD VCBO VCEO VEBO CODE V (V) ICBO @ VCB (nA) (V) MAX 5.0 *ICES *ICEV MAX 500 18 hFE @ VCE @ IC (V) (mA) NF toff 2N2712 NPN AMPL/SWITCH ECB MIN 18 - - - - 2N2714 NPN AMPL/SWITCH ECB 18 18 5.0
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Original
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2N2712
2N2714
2N2923
2N2924
2N2925
2N4289
2N4400
2n2712 data sheet
2N3711 equivalent
2N3904
2n4058
2N2926
2N3393
2N3859A equivalent to PNP
2N2712
2N2714
2N2923
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PDF
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BF858
Abstract: BF859 BF857 BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D067 BF857; BF858; BF859 NPN high-voltage transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1996 Dec 09 Philips Semiconductors Product specification NPN high-voltage transistors
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Original
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M3D067
BF857;
BF858;
BF859
O-202
MBH794
O-202.
BF858
BF859
BF857
BP317
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PDF
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BF859
Abstract: BF857 BF858 BF859 equivalent
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D067 BF857; BF858; BF859 NPN high-voltage transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1996 Dec 09 Philips Semiconductors Product specification NPN high-voltage transistors
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Original
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M3D067
BF857;
BF858;
BF859
O-202
MBH794
BF859
BF857
BF858
BF859 equivalent
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PDF
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1902 transistor
Abstract: BTN2129A3
Text: CYStech Electronics Corp. Spec. No. : C853A3 Issued Date : 2004.07.14 Revised Date :2004.09.02 Page No. : 1/5 NPN Epitaxial Planar Transistor BTN2129A3 Description The BTN2129A3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed
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C853A3
BTN2129A3
BTN2129A3
R2120
UL94V-0
1902 transistor
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PDF
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BF422A
Abstract: NPN transistor ECB TO-92 1902 transistor BF422 BF422A3 BF423A3 C234A3
Text: Spec. No. : C234A3 Issued Date : 2004.02.27 Revised Date : 2004.07.28 Page No. : 1/4 CYStech Electronics Corp. NPN Epitaxial Planar Transistor BF422A3 Description • NPN high voltage transistors in a TO-92 plastic package. • Complementary to BF423A3. Features
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Original
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C234A3
BF422A3
BF423A3.
UL94V-0
BF422A
NPN transistor ECB TO-92
1902 transistor
BF422
BF422A3
BF423A3
C234A3
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PDF
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NPN transistor ECB TO-92
Abstract: BF420A3 1902 transistor BF420 BF420A3S
Text: Spec. No. : C234A3-A Issued Date : 2004.03.02 Revised Date : 2004.10.18 Page No. : 1/4 CYStech Electronics Corp. NPN Epitaxial Planar Transistor BF420A3/S Description • NPN high voltage transistors in a TO-92 plastic package. • Complementary to BF421A3/S.
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Original
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C234A3-A
BF420A3/S
BF421A3/S.
UL94V-0
NPN transistor ECB TO-92
BF420A3
1902 transistor
BF420
BF420A3S
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PDF
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302 opto
Abstract: GET06017 Q62702-P1624 Q62702-P1625 Q62702-P1641 npn phototransistor
Text: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 302 Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 450 nm bis 1100 nm • Hohe Linearität • TO-18, Bodenplatte, klares Epoxy-Gießharz, mit Basisanschluß • Gruppiert lieferbar
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Original
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Q62702-P1641ppe.
GET06017
302 opto
GET06017
Q62702-P1624
Q62702-P1625
Q62702-P1641
npn phototransistor
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PDF
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transistor potencia
Abstract: PA6015 t092 ebc Transistor BC558 ebc CEB npn PB6025 PA6014 transistores BF494
Text: SI» I1ICR0ELETR0NICA S/A SDE D • fl531Bñ4 OOODOOfl 4 ■ TRANSISTORES Term. Tipo BC546 Pol. NPN BC547 NPN BC548 NPN BC549 NPN BC556 PNP BC557 PNP BC558 BC559 BF199 BF494 BF495 PNP PNP NPN NPN NPN PA6013 NPN PB6013 PNP PA6014 NPN PB6014 PNP PA6015 NPN PB6015 PNP
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OCR Scan
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fl531BÃ
BC546
BC547
BC548
BC549
BC556
BC557
PA6015
PB6015
PA6025
transistor potencia
t092
ebc Transistor
BC558 ebc
CEB npn
PB6025
PA6014
transistores
BF494
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PDF
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NPN transistor 2n4400 beta value
Abstract: TP4058 NPN transistor 2n 3904 TP4059 transistor EBC 3904 TP4060 2N2712 to-92hs TP3644 2N2711 2N2924
Text: Econoline S P R AGUE GENERAL-PURPOSE SMALL-SIGNAL AMPLIFIERS PO LA RIT Y D-C C U R R E N T G AIN hFE Conditions Limits 2N2711 2N2712 2N2923 2N2924 2N2925 2N2926« 2N3392 2N3393 2N3394 2N3395Y 2N3396Y 2N3397? 2 N3398T 2N3721 2N5172 NPN NPN NPN NPN NPN NPN
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OCR Scan
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2N2711
2N2712
2N2924
2N2925
2N2926Â
2N4401
2N4402
2N4403
MPS2713
MPS2714
NPN transistor 2n4400 beta value
TP4058
NPN transistor 2n 3904
TP4059
transistor EBC 3904
TP4060
2N2712 to-92hs
TP3644
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PDF
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2SA673A
Abstract: 2SC1213A ic100na NPN transistor ECB TO-92
Text: 2SA673A 2SC1213A SILICON TRANSISTOR 2SA673A PNP and 2SC1213A TO-92 (NPN) are silicon epitaxial transistors designed for medium power amplifiers and switching applications. (PNP) is complementary to 2SC1213A 2SA673A (NPN). ECB ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage
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OCR Scan
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2SA673A
2SC1213A
2SA673A
2SC1213A
500mA
400mW
100mA
ic100na
NPN transistor ECB TO-92
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PDF
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2N5249
Abstract: No abstract text available
Text: CRO DESCRIPTION 2N5249 is NPN silicon planar transistor designed for AF small signal amplifier stages. 2N5249 NPN SILICON TRANSISTOR TO-92B ECB ABSOLUTE M AXIMUM RATINGS Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
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OCR Scan
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2N5249
O-92B
2N5249
100mA
330mW
300fiS,
Aug-96
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PDF
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Untitled
Abstract: No abstract text available
Text: IC 2N3417 NPN SILICON TRANSISTOR TO-92 2N3417 is NPN silicon planar transistor designed for general purpose power applications. AF medium ECB ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage VCB0 Collector-Emitter Voltage Emitter-Base Voltage Collector Current
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OCR Scan
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2N3417
2N3417
500mA
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PDF
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|
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2N3417
Abstract: transistor BO 540 NPN transistor ECB TO-92
Text: 2N3417 NPN SILICON TRANSISTOR TO-92 2N3417 is NPN silicon planar transistor designed for general purpose power applications. AF medium ECB ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation
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OCR Scan
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2N3417
2N3417
500mA
transistor BO 540
NPN transistor ECB TO-92
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PDF
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TP107B
Abstract: 2N5133 TP107A 2N3565 TP109B tp107 TP252A TP251B MPS-A13 pnp 2N5138
Text: Q Q D f l O I I C EconolineR Plastic-Molded 0I KHV UC Silicon SEPT" Transistors SMALL-SIGNAL LOW NOISE AMPLIFIERS P O LA R IT Y Pd 25 C mW 2N3565 2N5133 2N5138 2N 5376 2N5377 2N5378 2N 5379 NPN NPN PNP NPN NPN PNP PNP 625 625 625 500 500 500 500 30 20 30
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OCR Scan
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2N3565
2N5133
2N5138
2N5377
2N5378
MPS5308A
2N5306
2N5306A
2N5307
2N5308
TP107B
TP107A
TP109B
tp107
TP252A
TP251B
MPS-A13 pnp
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PDF
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NPN transistor ECB TO-92
Abstract: 2N3414 0181 ecb
Text: NPN SILICON TRANSISTOR DESCRIPTION 2N3414 is NPN silicon transistor designed for general purpose AF medium power applications. TO-92 ECB ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Operating & Storage Junction Temperature
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OCR Scan
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2N3414
500mA
100jiA
10fiA
NPN transistor ECB TO-92
0181 ecb
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PDF
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2N5249
Abstract: "Small Signal Amplifier"
Text: 2N5249 NPN SILICON TRANSISTOR TO-92B DESCRIPTION 2N5249 is NPN silicon planar transistor designed for AF small signal amplifier stages. ECB ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Power Dissipation
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OCR Scan
|
2N5249
O-92B
100mA
330mW
10/iA
50PARAMETER
300/xS,
Aug-96
"Small Signal Amplifier"
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PDF
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2SC1815
Abstract: MICRO ELECTRONICS ltd transistor 2SC1815 GR
Text: 2SC1815 NPN SILICON TRANSISTOR TO-92B 2SC1815 is NPN silicon epitaxial transistor designed for RF, AF amplifier and general purpose applications. ECB ABSOLUTE MAXIMUM RATINGS 45 V Collector-Base Voltage vCB0 Collector-Emitter- Voltage VCEO Emitter-Base Voltage
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OCR Scan
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2SC1815
T0-92B
300mW
41Q321
MICRO ELECTRONICS ltd transistor
2SC1815 GR
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PDF
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2N4954
Abstract: 2N4951 2N4952 2N49 2N495 2N4953 B115m 631 TO92
Text: Ä!fliC»S€lH€ilSlf COrp. Central Semiconductor Corp. central Semiconductor Corp. 1 4 5 Adam s A venue Hauppauge, N e w York 1 1 7 8 8 ♦ » 2N4951 2N4952 2N4953 2Ub3Sb NPN SILICON TRANSISTORS JEDEC TO-92 CASE ECB DESCRIPTION The CENTRAL SEMICONDUCTOR 2N4951 Series types are Epoxy Molded Silicon NPN Transistors
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OCR Scan
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2N4951
2N4952
2N4953
2N495
2N4954)
2N4954
150mA,
100MHz
2N49
B115m
631 TO92
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PDF
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T BF859 NPN high-voltage transistor Product specification Supersedes data of 1996 Dec 09 Philips Sem iconductors 1999 Apr 14 PHILIPS Philips Semiconductors Product specification NPN high-voltage transistor BF859 DESCRIPTION
|
OCR Scan
|
BF859
115002/00/03/pp8
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PDF
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Untitled
Abstract: No abstract text available
Text: CRO DESCRIPTION The above types are NPN silicon planar epitaxial transistors for use in AF small amplifiers and direct coupled circuits. Their maximum power dissipation = 160mW at Ta=25°C. CASE T0-92Á MPS TYPES MPS/2N2923,4,5 and similar types NPN SILICON
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OCR Scan
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160mW
T0-92Ã
MPS/2N2923
T0-92B
MPS/2N2711
12pFnÂ
MPS/2N2712
MPSMPS/2N3398
200MHz
Dec-95
|
PDF
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BOX69477
Abstract: 2N5307 2N5308
Text: 2N 5307 & 2N 5308 NPN DARLINGTON AM P IFIER MECHANICAL OUTLINE TO-92B GENERAL DESCRIPTION : The 2N 5307 & 2N 5308 are NPN silicon planar epitaxial Darlington amplifiers* The devices are suitable for preamplifier input stages requir ing high input impedance or very high
|
OCR Scan
|
O-92B
300mA
200mA
200mA
TELEX-43510
BOX69477
2N5307
2N5308
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PDF
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2N5307
Abstract: No abstract text available
Text: 2N 5307 & 2N 5308 NPN DARLINGTON GENERAL DESCRIPTION : A M P IFIER MECHANICAL OUTLINE TO-92B The 2N 5307 & 2N 5308 are NPN silicon planar epitaxial Darlington amplifiers. The devices are suitable for preamplifier input stages requir ing high input impedance or very high
|
OCR Scan
|
O-92B
400sM
10ftnA
20MHz
2N5307
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PDF
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