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    NPN IC 25MA Search Results

    NPN IC 25MA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation

    NPN IC 25MA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC4296

    Abstract: No abstract text available
    Text: 2SC4296 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor µA 400min V hFE VCE=4V, IC=6A 10 to 30 23.0±0.3 100max IC=25mA IB 4 A VCE(sat) IC=6A, IB=1.2A 0.5max PC 75(Tc=25°C) W VBE(sat) IC=6A, IB=1.2A 1.3max


    Original     		PDF 2SC4296 Pulse20) 400min 10typ 85typ 100max FM100 2SC4296

    2SC4296

    Abstract: No abstract text available
    Text: 2SC4296 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor µA 400min V hFE VCE=4V, IC=6A 10 to 30 23.0±0.3 100max IC=25mA IB 4 A VCE(sat) IC=6A, IB=1.2A 0.5max PC 75(Tc=25°C) W VBE(sat) IC=6A, IB=1.2A 1.3max


    Original     		PDF 2SC4296 Pulse20) 400min 10typ 85typ 100max FM100 2SC4296

    2SC5370

    Abstract: FM20
    Text: 2SC5370 Silicon NPN Epitaxial Planar Transistor 40 V IEBO VEBO 7 V V BR CEO IC 12 A Ratings Unit VCB=60V 10max µA Conditions VEB=7V 10max µA IC=25mA 40min V hFE VCE=2V, IC=6A 70min∗ IB 3 A VCE(sat) IC=6A, IB=0.3A 0.3max PC 30(Tc=25°C) W VBE(sat) IC=6A, IB=0.3A


    Original     		PDF 2SC5370 10max 40min 70min 90typ 120typ O220F) 2SC5370 FM20

    2SC5370

    Abstract: FM20 2402 transistor
    Text: 2SC5370 Silicon NPN Epitaxial Planar Transistor 40 V IEBO VEBO 7 V V BR CEO IC 12 A 2SC5370 Unit VCB=60V 10max µA Conditions VEB=7V 10max µA IC=25mA 40min V hFE VCE=2V, IC=6A 70min∗ IB 3 A VCE(sat) IC=6A, IB=0.3A 0.3max PC 30(Tc=25°C) W VBE(sat) IC=6A, IB=0.3A


    Original     		PDF 2SC5370 10max 40min 70min 90typ 120typ O220F) 2SC5370 FM20 2402 transistor

    2SC4130

    Abstract: FM20 transistor+2sC4130
    Text: 2SC4130 Silicon NPN Epitaxial Planar Transistor High Voltage and High Speed Switchihg Transistor µA 400min V hFE VCE=4V, IC=3A 10 to 30 16.9±0.3 100max IC=25mA IB 2 A VCE(sat) IC=3A, IB=0.6A 0.5max PC 30(Tc=25°C) W VBE(sat) IC=3A, IB=0.6A 1.3max V Tj


    Original     		PDF 2SC4130 Pulse14) 100max 400min 15typ 50typ O220F) 2SC4130 FM20 transistor+2sC4130

    2SD2141 equivalent

    Abstract: 2SD2141 FM20 DMS-10
    Text: Equivalent circuit 2SD2141 Silicon NPN Triple Diffused Planar Transistor ICBO VCEO 380±50 V IEBO VEBO 6 V V BR CEO 6(Pulse10) A hFE IC Symbol Conditions VCB=330V 10max µA VEB=6V 20max mA IC=25mA 330 to 430 V 1500min VCE=2V, IC=3A 1 A VCE(sat) IC=4A, IB=20mA


    Original     		PDF 2SD2141 Pulse10) 10max 20max 1500min 20typ 95typ O220F) 120mA 2SD2141 equivalent 2SD2141 FM20 DMS-10

    TMS1000

    Abstract: No abstract text available
    Text: 2SC4512 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1726 Conditions Ratings Unit V ICBO VCB=120V 10max µA VCEO 80 V IEBO VEB=6V 10max µA VEBO 6 V V(BR)CEO IC=25mA 80min V IC 6 A hFE VCE=4V, IC=2A 50min 10.2±0.2 3 A VCE(sat) IC=5A, IB=0.2A


    Original     		PDF 2SC4512 2SA1726) 10max 80min 50min 20typ 110typ MT-25 to100) TMS1000

    2SC4064

    Abstract: No abstract text available
    Text: 2SC4064 Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1567 V(BR)CEO IC 12 A hFE µA VEB=6V 10max µA IC=25mA 50min V VCE=1V, IC=6A 50min IB 3 A VCE(sat) IC=6A, IB=0.3A 0.35max V PC 35(Tc=25°C) W fT VCE=12V, IE=–0.5A 40typ MHz 150 °C COB


    Original     		PDF 2SC4064 100max 10max 50min 35max 40typ 180typ 2SA1567) O220F) 2SC4064

    2SC4382

    Abstract: 2SC4381 FM20 2SC4382 transistor DSA0016509
    Text: 2SC4381/4382 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1667/1668 V ICBO VCB= VEBO 6 V IEBO IC 2 A V(BR)CEO 150 VEB=6V 200 V µA 10max IC=25mA 150min 200min 1 A hFE VCE=10V, IC=0.7A 60min PC 25(Tc=25°C) W VCE(sat) IC=0.7A, IB=0.07A


    Original     		PDF 2SC4381/4382 2SA1667/1668) 10max 150min 200min 60min 15typ 35typ O220F) 2SC4382 2SC4381 FM20 2SC4382 transistor DSA0016509

    2SC4064

    Abstract: 2SA1567 FM20
    Text: 2SC4064 Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1567 IC 12 A hFE VEB=6V 10max µA IC=25mA 50min V VCE=1V, IC=6A 50min IB 3 A VCE(sat) IC=6A, IB=0.3A 0.35max V PC 35(Tc=25°C) W fT VCE=12V, IE=–0.5A 40typ MHz 150 °C COB VCB=12V, f=1MHz


    Original     		PDF 2SC4064 2SA1567) 100max 10max 50min 35max 40typ 180typ 2SC4064 2SA1567 FM20

    2SD2017

    Abstract: FM20
    Text: 2SD2017 Silicon NPN Triple Diffused Planar Transistor VCEO 250 V IEBO VEBO 20 V V BR CEO IC 6 A hFE VCE=2V, IC=2A 2000min Conditions Unit VCB=300V 100max µA VEB=20V 10max mA IC=25mA 250min 10.1±0.2 V IB 1 A VCE(sat) IC=2A, IB=2mA 1.5max PC 35(Tc=25°C) W


    Original     		PDF 2SD2017 O220F) 2000min 100max 10max 250min 20typ 65typ 150x150x2 100x100x2 2SD2017 FM20

    2SC3890

    Abstract: FM20
    Text: 2SC3890 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor µA IEBO VEB=10V 100max µA V(BR)CEO IC=25mA 400min V hFE VCE=4V, IC=3A 10 to 30 IB 2 A VCE(sat) IC=3A, IB=0.6A 0.5max PC 30(Tc=25°C) W VBE(sat) IC=3A, IB=0.6A


    Original     		PDF 2SC3890 100max 400min Pulse14) 10typ 50typ O220F) 2SC3890 FM20

    2SC3179

    Abstract: 2SA1262
    Text: 2SC3179 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1262 ICBO VCEO 60 V IEBO VEBO 6 V V(BR)CEO IC 4 A hFE Symbol Conditions 2SC3179 Unit VCB=80V 100max µA VEB=6V 100max µA IC=25mA 60min V VCE=4V, IC=1V 40min IB 1 A VCE(sat) IC=2A, IB=0.2A


    Original     		PDF 2SC3179 2SA1262) 100max 60min 40min 15typ 60typ 29typ 2SC3179 2SA1262

    2SC4662

    Abstract: FM20
    Text: 2SC4662 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor µA IEBO VEB=10V 100max µA V(BR)CEO IC=25mA 400min V hFE VCE=4V, IC=1.5A 10 to 30 IB 2 A VCE(sat) IC=1.5A, IB=0.3A 0.5max PC 30(Tc=25°C) W VBE(sat) IC=1.5A, IB=0.3A


    Original     		PDF 2SC4662 100max 400min 20typ 30typ Pulse10) O220F) 2SC4662 FM20

    Untitled

    Abstract: No abstract text available
    Text: 2SC4065 Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1568 ±12 A IC VEB=6V 60max mA IC=25mA 60min V hFE VCE=1V, IC=6A 50min IC=6A, IB=1.3A 0.35max VECO=10A 2.5max V IB 3 A VCE(sat) PC 35(Tc=25°C) W VFEC Tj 150 °C fT VCE=12V, IE=–0.5A


    Original     		PDF 2SC4065 100max 60max 60min 50min 35max 24typ 180typ 2SA1568) O220F)

    2SC3852A

    Abstract: 2sc3852 FM20 3852-A DSA0016508
    Text: 2SC3852/3852A High hFE LOW VCE sat Silicon NPN Epitaxial Planar Transistor IC 3 A V(BR)CEO VEB=6V V µA 100max IC=25mA 60min 80min V 1 A hFE VCE=4V, IC=0.5A 500min PC 25(Tc=25°C) W VCE(sat) IC=2A, IB=50mA 0.5max V Tj 150 °C fT VCE=12V, IE=–0.2A 15typ


    Original     		PDF 2SC3852/3852A 100max 60min 80min 500min 15typ 50typ O220F) 2SC3852 2SC3852A 2SC3852A FM20 3852-A DSA0016508

    2SC4662

    Abstract: FM20
    Text: 2SC4662 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor µA IEBO VEB=10V 100max µA V(BR)CEO IC=25mA 400min V hFE VCE=4V, IC=1.5A 10 to 30 IB 2 A VCE(sat) IC=1.5A, IB=0.3A 0.5max PC 30(Tc=25°C) W VBE(sat) IC=1.5A, IB=0.3A


    Original     		PDF 2SC4662 100max 400min 20typ 30typ Pulse10) O220F) 2SC4662 FM20

    2SC4511

    Abstract: 2SA1725 FM20
    Text: 2SC4511 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1725 V(BR)CEO IC 6 A hFE VEB=6V 10max µA IC=25mA 80min V VCE=4V, IC=2A 50min∗ 10.1±0.2 3 A VCE(sat) IC=2A, IB=0.2A 0.5max V PC 30(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz


    Original     		PDF 2SC4511 2SA1725) 10max 80min 50min 20typ 110typ to100) to140) 2SC4511 2SA1725 FM20

    2SC2922

    Abstract: 2SA1216 IC-25 DSA0016507
    Text: 2SC2922 Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1216 ICBO Ratings Unit VCB=180V 100max µA VEB=5V 100max µA IC=25mA 180min V 24.4±0.2 180 V IEBO VEBO 5 V V(BR)CEO IC 17 A hFE VCE=4V, IC=8V IB 5 A VCE(sat) IC=8A, IB=0.8A 2.0max V PC


    Original     		PDF 2SC2922 2SA1216) MT-200 100max 180min 50typ 250typ 30min 2SC2922 2SA1216 IC-25 DSA0016507

    2SC2023

    Abstract: No abstract text available
    Text: 2SC2023 Silicon NPN Triple Diffused Planar Transistor V ICBO VCEO 300 V IEBO VEBO 6 V V BR CEO IC 2 A hFE 2SC2023 Unit VCB=300V 1.0max mA VEB=6V 1.0max mA IC=25mA 300min V VCE=4V, IC=0.5A 30min IB 0.2 A VCE(sat) IC=1.0A, IB=0.2A 1.0max V PC 40(Tc=25°C) W


    Original     		PDF 2SC2023 MT-25 300min 30min 10typ 75typ 100x100x2 50x50x2 2SC2023

    2SC5333

    Abstract: FM20
    Text: 2SC5333 Silicon NPN Triple Diffused Planar Transistor IC 2 A hFE VEB=6V 1.0max mA IC=25mA 300min V VCE=4V, IC=0.5A 30min IB 0.2 A VCE sat IC=1.0A, IB=0.2A 1.0max V PC 35(Tc=25°C) W fT VCE=12V, IE=–0.2A 10typ MHz Tj 150 °C COB VCB=10V, f=1MHz 75typ pF


    Original     		PDF 2SC5333 300min 30min 10typ 75typ O220F) 2SC5333 FM20

    2SC2922

    Abstract: transistor 2sc2922 2SA1216 2sc2922 safe operating area
    Text: 2SC2922 Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1216 Symbol ICBO Conditions 2SC2922 Unit VCB=180V 100max µA VEB=5V 100max µA IC=25mA 180min V 24.4±0.2 VCEO 180 V IEBO VEBO 5 V V(BR)CEO IC 17 A hFE VCE=4V, IC=8V IB 5 A VCE(sat) IC=8A, IB=0.8A


    Original     		PDF 2SC2922 2SA1216) MT-200 100max 180min 50typ 250typ 2SC2922 transistor 2sc2922 2SA1216 2sc2922 safe operating area

    2SD2017

    Abstract: FM20
    Text: 2SD2017 Silicon NPN Triple Diffused Planar Transistor VCEO 250 V IEBO VEBO 20 V V BR CEO IC 6 A hFE VCE=2V, IC=2A 2000min Conditions Unit VCB=300V 100max µA VEB=20V 10max mA IC=25mA 250min 10.1±0.2 V IB 1 A VCE(sat) IC=2A, IB=2mA 1.5max PC 35(Tc=25°C) W


    Original     		PDF 2SD2017 O220F) 2000min 100max 10max 250min 20typ 65typ 150x150x2 100x100x2 2SD2017 FM20

    2sd2083

    Abstract: 2sb1383
    Text: 2SD2083 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1383 IEBO VEB=6V 10max mA 6 V V(BR)CEO 25(Pulse40) A hFE IC=25mA 120min VCE=4V, IC=12A 2000min V 2 A VCE(sat) IC=12A, IB=24mA 1.8max PC 120(Tc=25°C) W VBE(sat) IC=12A, IB=24mA 2.5max


    Original     		PDF 2SD2083 2SB1383) 10max Pulse40) 120min 2000min 20typ 340typ MT-100 2sd2083 2sb1383