NPN SILICON EPITAXIAL PLANAR TRANSISTOR HIGH VOLT Search Results

NPN SILICON EPITAXIAL PLANAR TRANSISTOR HIGH VOLT Result Highlights (5)

Part	Manufacturer	Description
MG800FXF1JMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
2SA1213	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini
2SA1943	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-230 V / IC=-15 A / hFE=55~160 / VCE(sat)=-3.0 V / TO-3P(L)
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini

NPN SILICON EPITAXIAL PLANAR TRANSISTOR HIGH VOLT Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD TC200 Preliminary NPN EPITAXIAL SILICON TRANSISTOR EPITAXIAL PLANAR NPN TRANSISTOR DESCRIPTION The UTC TC200 is an epitaxial planar NPN transistor; it uses UTC’s advanced technology to provide the customers with high DC	Original	TC200 TC200 TC200L-x-T92-B TC200G-x-T92-B TC200L-x-T92-K TC200G-x-T92-K QW-R201-087	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 2SC4467 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED PLANAR TRANSISTOR  DESCRIPTION The UTC 2SC4467 is a silicon NPN triple diffused planar transistor, it uses UTC’s advanced technology to provide the customers with high DC current gain and high collector-base	Original	2SC4467 2SC4467 2SC4467L-x-T3P-T 2SC4467G-x-T3P-T 2SC4467L-x-T3N-T 2SC4467G-x-T3N-T QW-R214-018	PDF
transistor b1 Abstract: hlb124 NPN Transistor 600V 1S1000 utchlb124 Text: UTC HLB124 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC HLB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications. 1 FEATURES * High Speed Switching * Low Saturation Voltage	Original	HLB124 HLB124 O-220 HLB124L QW-R203-029 transistor b1 NPN Transistor 600V 1S1000 utchlb124	PDF
Untitled Abstract: No abstract text available Text: UTC 2SC2482 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR APPLICATIONS HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATIONS COLOR TV HORIZ. DRIVER APPLICATIONS COLOR TV CHROMA OUTPUT APPLICATIONS 1 FEATURES High Voltage :V BR CEO= 300V	Original	2SC2482 O-92NL 100ms* 500ms* QW-R211-015	PDF
Untitled Abstract: No abstract text available Text: UTC 2SD1060 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PLANAR SILICON TRANSISTOR FEATURE Low collector-to-emitter saturation voltage: VCE sat =0.4V max/IC=3A, IB=0.3A APPLICATIONS 1 Suitable for relay drivers, high-speed inverter, converters, and other general large-current switching.	Original	2SD1060 O-252 QW-R209-002	PDF
Untitled Abstract: No abstract text available Text: UTC 2SD1060 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PLANAR SILICON TRANSISTOR FEATURE Low collector-to-emitter saturation voltage: VCE sat =0.4V max/IC=3A, IB=0.3A APPLICATIONS 1 Suitable for relay drivers, high-speed inverter, converters, and other general large-current switching.	Original	2SD1060 O-126 QW-R204-012	PDF
2SA1786 Abstract: 2SC4646 35123 2SC4646E Text: Ordering number:EN3512B 2SA1786 : PNP Epitaxial Planar Silicon Transistor 2SC4646 : NPN Triple Diffused Planar Silicon Transistor 2SA1786/2SC4646 High Voltage Driver Applications Features Package Dimensions • Large current capacity IC=2A . · High breakdown voltage (VCEO≥400V).	Original	EN3512B 2SA1786 2SC4646 2SA1786/2SC4646 VCEO400V) 2SA1786/2SC4646] 2SA1786 2SC4646 35123 2SC4646E	PDF
Untitled Abstract: No abstract text available Text: BU406 NPN Epitaxial Silicon Transistor Features Description • High-Voltage Capability The BU406 is a 400 V 7 A Silicon Epitaxial Planar NPN Transistor. The BU406 is designed for high speed switching applications which utilizes the industry standard TO-220 package offering flexibility in	Original	BU406 BU406 O-220 O-220 BU406TU	PDF
BC394 Abstract: No abstract text available Text: BC394 EPITAXIAL PLANAR NPN • HIGH VOLTAGE AMPLIFIER DESCRIPTION The BC394 is a silicon Planar Epitaxial NPN transistor in Jedec TO-18 metal case, designed for general purpose high-voltage and video amplifier applications. TO-18 INTERNAL SCHEMATIC DIAGRAM	Original	BC394 BC394	PDF
Untitled Abstract: No abstract text available Text: Ordering number : ENN3511A 2SA1785 : PNP Epitaxial Planar Silicon Transistor 2SC4645 : NPN Triple Diffused Planar Silicon Transistor 2SA1785/2SC4645 High Voltage Driver Applications Features Package Dimensions • Large current capacity IC=1A . · High breakdown voltage (VCEO≥400V).	Original	ENN3511A 2SA1785 2SC4645 2SA1785/2SC4645 2SA1785/2SC4645] 2SA1785 2SC4645/D	PDF
monochrome diagram Abstract: monochrome crt schematic BU407 Text: BU407 HIGH CURRENT NPN SILICON TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR APPLICATIONS HORIZONTAL DEFLECTION FOR MONOCHROME TVs ■ DESCRIPTION The BU407 is a silicon Epitaxial Planar NPN transistor in Jedec TO-220 plastic package.	Original	BU407 BU407 O-220 O-220 monochrome diagram monochrome crt schematic	PDF
CZT2000 Abstract: No abstract text available Text: Central CZT2000 TM Semiconductor Corp. NPN SILICON EXTREMELY HIGH VOLTAGE DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT2000 type is an NPN Epitaxial Planar Silicon Darlington Transistor manufactured in an epoxy molded surface mount package,	Original	CZT2000 OT-223 160mA, 160mA CZT2000	PDF
sot 23 marking code c29 Abstract: "Darlington Transistor" high voltage darlington CMPTA29 Text: Central CMPTA29 TM Semiconductor Corp. HIGH VOLTAGE NPN SILICON DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA29 is an NPN silicon darlington transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package,	Original	CMPTA29 CMPTA29 OT-23 100mA, 100mA 100MHz 26-September sot 23 marking code c29 "Darlington Transistor" high voltage darlington	PDF
2SA1773 Abstract: 2SC4616 300V transistor npn 2a Text: 2SA1773 / 2SC4616 Ordering number : EN3399D SANYO Semiconductors DATA SHEET 2SA1773 / 2SC4616 2SA1773 : PNP Epitaxial Planar Silicon Transistor 2SC4616 : NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications Features • • Large current capacity IC=2A .	Original	2SA1773 2SC4616 EN3399D 2SA1773 VCEO400V) 2SC4616 300V transistor npn 2a	PDF

2n3700 Abstract: tfk 140 Text: Silizium-NPN-Epitaxial-Planar-Transistor Silicon NPN Epitaxial Planar Transistor Anwendungen: Allgem ein Applications: G eneral Features: Besondere Merkmale: • Hohe Sperrspannung • High reverse voltage • Hohe S trom verstärkung • High current gain	OCR Scan		PDF
2n3019 Abstract: tfk 140 3019 npn transistor 554 -1 transistor Text: Silizium-NPN-Epitaxial-Planar-Transistor Silicon NPN Epitaxial Planar Transistor Anwendungen: A llgem ein und Verstärker Applications: G eneral and a m plifier Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage • Hohe S trom verstärkung	OCR Scan		PDF
air variable capacitor Abstract: POWER TRANSISTOR 2sC3102 2sc3102 transistor CAPACITOR MURATA tta series 2SC3102 2SC310 mica capacitor mica material capacitor murata pir Text: MITSUBISHI RF POWER TRANSISTOR 2SC3102 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC3102 is a silicon NPN epitaxial planar type transistor specifi OUTLINE DRAWING cally designed for high power amplifiers applications in UHF band. Dimensions in mm R1 FEATURES	OCR Scan	2SC3102 2SC3102 PoS60W, 520MHz, 520MHz. 520MHz) 100pF to10pF air variable capacitor POWER TRANSISTOR 2sC3102 2sc3102 transistor CAPACITOR MURATA tta series 2SC310 mica capacitor mica material capacitor murata pir	PDF
transistor w 431 Abstract: TRANSISTOR BC 431 TRANSISTOR 431 transistor 431 c 431 transistor a 431 transistor y 431 transistor transistor bc 488 bc 106 transistor w 431 transistor Text: BC 431 'W Silizium-NPN-Epitaxial-Planar-NF-Transistor Silicon NPN Epitaxial Planar AF Transistor Anwendungen: Treiber und Endstufen Applications: Driver and po w e r stages Besondere Merkmale: • Hohe Sperrspannung Features: • High reverse voltage • Verlustleistung 6:25 mW	OCR Scan		PDF
2SC3241 Abstract: 330L RF POWER TRANSISTOR 30MHz Text: MITSUBISHI RF POWER TRANSISTOR 2SC3241 NPN EPITAXIAL PLANAR TYPE DISCRIPTION OUTLINE DRAWING 2SC3241 is a silicon NPN epitaxial planar typ e transistor Dimensions in mm specifically designed fo r high power am plifiers in HF band. FEATURES • High gain: G pe ^ 12.3dB	OCR Scan	2SC3241 30MHz, 330L RF POWER TRANSISTOR 30MHz	PDF
Untitled Abstract: No abstract text available Text: Central CZT2000 Semiconductor Corp. NPN SILICON EXTREMELY HIGH VOLTAGE DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT2000 type is an NPN Epitaxial Planar Silicon Darlington Transistor manufactured in an epoxy molded surface mount package,	OCR Scan	CZT2000 OT-223 160mA, 160mA 100hA	PDF
2SC4548 Abstract: No abstract text available Text: I Ordering number: EN 3188 2SA1740/2SC4548 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications F eatu res • High breakdown voltage • Adoption of MBIT process • Excellent hpElinearlity	OCR Scan	2SA1740 250mm2 2SA1740/2SC4548 -----12SA1740/2SC4548 250mm2XOi 2SC4548	PDF
Untitled Abstract: No abstract text available Text: Ordering number: EN3511A _ 2SA1785/2SC4645 2SA1785:PNP Epitaxial Planar Silicon Transistor 2SC4645:NPN Triple Diffused Planar Silicon Transistor High Voltage Driver Applications F e a tu re s •Large current capacity Ic = 1A • High breakdown voltage (Vceo = 400V)	OCR Scan	EN3511A 2SA1785/2SC4645 2SA1785 2SC4645 2SA1785 12894TH AX-8287/517OTA 2SA1785/2 SC4645	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI RF POWER TRANSISTOR 2SC3102 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION 2SC3102 is a silicon NPN epitaxial planar type transistor specifi OUTLINE DRAWING cally designed fo r high power amplifiers applications in UHF band. Dim ensions in mm R1 FEATURES	OCR Scan	2SC3102 2SC3102 520MHz, 520MHz. 520MHz) 100pF to10pF to20pF	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI RF POWER TRANSISTOR 2SC4838 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC4838 is a silicon NPN epitaxial planar type transistor OUTLINE DRAWING Dimension in mm specifically designed -for RF power amplifiers in 1,65GHz. FEATURES High power gain : Gpb S 9.3dB, Po fe 6W	OCR Scan	2SC4838 2SC4838 65GHz. 65GHz, 2SC4525	PDF

NPN SILICON EPITAXIAL PLANAR TRANSISTOR HIGH VOLT Search Results

NPN SILICON EPITAXIAL PLANAR TRANSISTOR HIGH VOLT Result Highlights (5)

NPN SILICON EPITAXIAL PLANAR TRANSISTOR HIGH VOLT Datasheets Context Search

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transistor b1

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2SA1786

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BC394

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monochrome diagram

CZT2000

sot 23 marking code c29

2SA1773

2n3700

2n3019

air variable capacitor

transistor w 431

2SC3241

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2SC4548

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