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    NPT25015D Search Results

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    NPT25015D Price and Stock

    MACOM NPT25015D

    RF MOSFET HEMT 28V 8SOIC
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    DigiKey NPT25015D Tube 66 1
    • 1 $64.06
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    Mouser Electronics NPT25015D
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    • 100 $49.05
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    Richardson RFPD NPT25015D 1
    • 1 $54.26
    • 10 $54.26
    • 100 $54.26
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    NPT25015D Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NPT25015D M/A-Com Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - HEMT N-CH 28V 23W DC-3GHZ 8SOIC Original PDF

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    NPT25015

    Abstract: NPT25015D EAR99 JESD22-A114 JESD22-A115 APP-NPT25015-25 NDS-004 NPT25015DT
    Text: NPT25015 Datasheet Gallium Nitride 28V, 23W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from DC - 3000 MHz • 23W P3dB peak envelope power PEP


    Original     		PDF NPT25015 2500-2700MHz EAR99 200mA, 2500MHz, NDS-004 NPT25015D JESD22-A114 JESD22-A115 APP-NPT25015-25 NPT25015DT

    Untitled

    Abstract: No abstract text available
    Text: NPT25015 Gallium Nitride 28V, 23W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from DC - 3000 MHz • 23W P3dB peak envelope power PEP


    Original     		PDF NPT25015 2500-2700MHz EAR99 200mA, 2500MHz, NDS-004

    NPT25015DT

    Abstract: NPT25015DR
    Text: NPT25015 Gallium Nitride 28V, 23W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from DC - 3000 MHz • 23W P3dB peak envelope power PEP


    Original     		PDF NPT25015 2500-2700MHz EAR99 200mA, 2500MHz, NDS-004 NPT25015DT NPT25015DR