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    NTD4858NT4G Search Results

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    NTD4858NT4G Price and Stock

    UMW NTD4858NT4G

    MOSFET N-CH 25V 11.2A/73A DPAK
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    DigiKey NTD4858NT4G Reel 2,500 2,500
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    NTD4858NT4G Cut Tape 2,500 1
    • 1 $0.84
    • 10 $0.565
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    NTD4858NT4G Digi-Reel 2,500 1
    • 1 $0.84
    • 10 $0.565
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    Rochester Electronics LLC NTD4858NT4G

    POWER FIELD-EFFECT TRANSISTOR, 1
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    DigiKey NTD4858NT4G Bulk 807
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    onsemi NTD4858NT4G

    MOSFET N-CH 25V 11.2A/73A DPAK
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    DigiKey NTD4858NT4G Reel
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    NTD4858NT4G Cut Tape 1
    • 1 $0.9
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    Verical NTD4858NT4G 63,445 933
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    NTD4858NT4G 39,000 933
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    NTD4858NT4G 30,000 933
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    NTD4858NT4G 22,914 933
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    NTD4858NT4G 8,872 933
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    NTD4858NT4G 7,500 933
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    NTD4858NT4G 2,974 933
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    Rochester Electronics NTD4858NT4G 175,670 1
    • 1 $0.3576
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    TME NTD4858NT4G 1
    • 1 $0.74
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    • 100 $0.347
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    Flip Electronics NTD4858NT4G 739
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    NTD4858NT4G Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NTD4858NT4G On Semiconductor Power MOSFET 25V, 70A, Single N-Channel Original PDF

    NTD4858NT4G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    58ng

    Abstract: mosfet 58ng on 48 58ng 48 58ng
    Text: NTD4858N Power MOSFET 25 V, 73 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com


    Original     		PDF NTD4858N NTD4858N/D 58ng mosfet 58ng on 48 58ng 48 58ng

    mosfet 58ng

    Abstract: 58ng 48 58ng 4858ng mosfet+58ng on 48 58ng
    Text: NTD4858N Power MOSFET 25 V, 73 A, Single N−Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4858N NTD4858N/D mosfet 58ng 58ng 48 58ng 4858ng mosfet+58ng on 48 58ng

    58ng

    Abstract: mosfet 58ng 4858ng 48 58ng 4858N NTD4858N Power MOSFET 369D NTD4858N
    Text: NTD4858N Power MOSFET 25 V, 73 A, Single N-Channel, DPAK/IPAK Features •ăTrench Technology •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices


    Original     		PDF NTD4858N NTD4858N/D 58ng mosfet 58ng 4858ng 48 58ng 4858N NTD4858N Power MOSFET 369D NTD4858N

    58ng

    Abstract: 4858ng mosfet 58ng 48 58ng NTD4858N Power MOSFET 4858n NTD4858N NTD4858N-1G 369D NTD4858NT4G
    Text: NTD4858N Power MOSFET 25 V, 73 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com


    Original     		PDF NTD4858N NTD4858N/D 58ng 4858ng mosfet 58ng 48 58ng NTD4858N Power MOSFET 4858n NTD4858N NTD4858N-1G 369D NTD4858NT4G

    mosfet 58ng

    Abstract: 48 58ng
    Text: NTD4858N Power MOSFET 25 V, 73 A, Single N−Channel, DPAK/IPAK Features • • • • • Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices


    Original     		PDF NTD4858N NTD4858N/D mosfet 58ng 48 58ng