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NTE Electronics Inc NTE2539 Transistor, bjt, npn,400V V(Br)Ceo,25A I(C),to-247Var Rohs Compliant: Yes \|Nte Electronics NTE2539
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	NTE2539	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Onlinecomponents.com	NTE2539		33			1 - 10 $13.48 100 $10.5 1000 $9.4 10000 $9.4	Buy Now
Bristol Electronics	NTE2539		1			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	NTE2539		1			1 $12 10 $12 100 $12 1000 $12 10000 $12	Buy Now
NTE Electronics Inc NTE2530 Transistor NPN Silicon 400V IC=2A TO-126N Case Tf=0.6us High Voltage Driver Compl To NTE2531
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	NTE2530		80			1 - 10 $3.35 100 $2.67 1000 $2.37 10000 $2.2	Buy Now
Bristol Electronics	NTE2530		2			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	NTE2530		1			1 $6 10 $6 100 $6 1000 $6 10000 $6	Buy Now
NTE Electronics Inc NTE2532 EPROM - NMOS Memory - 32K - 300ns - UV Erasable - 24-lead DIP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	NTE2532		2			1 $32.61 10 $26.35 100 $23.32 1000 $22.05 10000 $22.05	Buy Now
Bristol Electronics	NTE2532		1			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	NTE2532		4			1 $21.4403 10 $21.4403 100 $21.4403 1000 $21.4403 10000 $21.4403	Buy Now
	NTE2532		1			1 $20.8 10 $20.8 100 $20.8 1000 $20.8 10000 $20.8	Buy Now
NTE Electronics Inc NTE253MCP Matched Complementary Pair Of NTE253 And NTE254
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	NTE253MCP		2			1 $5.46 10 $4.96 100 $3.84 1000 $3.4 10000 $3.31	Buy Now
NTE Electronics Inc NTE253
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	NTE253		10			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	NTE253		5		2	1 - 10 $3 100 $3 1000 $3 10000 $3	Buy Now
Quest Components	NTE253		10			1 $2.2115 10 $2.0346 100 $2.0346 1000 $2.0346 10000 $2.0346	Buy Now
	NTE253		8			1 $2.52 10 $1.89 100 $1.89 1000 $1.89 10000 $1.89	Buy Now
	NTE253		4			1 $4 10 $3 100 $3 1000 $3 10000 $3	Buy Now

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NTE253 Datasheets (12)

Part	Manufacturer	Description	Datasheet Type	PDF
NTE253	NTE Electronics	Silicon Complementary Transistor Darlington Power Amplifier	Original	PDF
NTE253	NTE Electronics	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor NPN, Si, Darlington Power Amp, Pkg Style TO126	Scan	PDF
NTE2530	NTE Electronics	Silicon Complementary Transistor High Voltage Switch	Original	PDF
NTE2531	NTE Electronics	Silicon Complementary Transistor High Voltage Switch	Original	PDF
NTE2532	NTE Electronics	Integrated Circuit NMOS, 32K EPROM, 300ns	Original	PDF
NTE2533	NTE Electronics	Silicon NPN Transistor High-Definition Color Display Horizontal Deflection Output	Original	PDF
NTE2534	NTE Electronics	Silicon Complementary Transistor High Current Switch	Original	PDF
NTE2535	NTE Electronics	Silicon Complementary Transistor High Current Switch	Original	PDF
NTE2536	NTE Electronics	Silicon Complementary Transistor High Current Switch	Original	PDF
NTE2537	NTE Electronics	Silicon Complementary Transistor High Current Switch	Original	PDF
NTE2538	NTE Electronics	Silicon NPN Transistor High Voltage, High Current Switch	Original	PDF
NTE2539	NTE Electronics	Silicon NPN Transistor High Voltage, High Speed Switch	Original	PDF

NTE253 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
NTE2534 Abstract: NTE2535 Text: NTE2534 NPN & NTE2535 (PNP) Silicon Complementary Transistors High Current Switch Features: D Low Collector Emitter Saturation Voltage Applications: D Relay Drivers D High Speed Inverters D Converters Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)	Original	PDF	NTE2534 NTE2535 10IB1 10IB2 NTE2535, NTE2534 NTE2535
NTE2539 Abstract: No abstract text available Text: NTE2539 Silicon NPN Transistor High Voltage, High Speed Switch Features: D High Breakdown Voltage and Reliability D Fast Switching Speed D Wide ASO Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V	Original	PDF	NTE2539 NTE2539
PNP Monolithic Transistor Pair Abstract: NTE253MCP DSA0013913 SILICON COMPLEMENTARY transistors darlington Text: NTE253 NPN & NTE254 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126 type case designed for general–purpose amplifier and low–speed switching applications.	Original	PDF	NTE253 NTE254 NTE253MCP PNP Monolithic Transistor Pair DSA0013913 SILICON COMPLEMENTARY transistors darlington
NPN VCEO 800V Abstract: NTE2533 NPN Transistor 1500V 20a Text: NTE2533 Silicon NPN Transistor High−Definition Color Display Horizontal Deflection Output TO3PBL Type Package Features: D High Speed: tf = 100ns Typ D High Breakdown Voltage: VCBO = 1500V D High Reliability Absolute Maximum Ratings: TA = +25°C unless otherwise specified	Original	PDF	NTE2533 100ns 100mA, NPN VCEO 800V NTE2533 NPN Transistor 1500V 20a
Untitled Abstract: No abstract text available Text: NTE2536 NPN & NTE2537 (PNP) Silicon Complementary Transistors High Current Switch Features: D High Current Capacity D Wide ASO Range D Low Saturation Voltage Applications: D Motor Drivers D Relay Drivers D Converters Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)	Original	PDF	NTE2536 NTE2537
Untitled Abstract: No abstract text available Text: NTE2530 NPN & NTE2531 (PNP) Silicon Complementary Transistors High Voltage Driver Features: D High Current Capacity: IC = 2A D High Breakdown Voltage: VCEO = 400V Min Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V	Original	PDF	NTE2530 NTE2531 10IB1 10IB2 500mA,
NPN VCEO 800V Abstract: NTE2533 Text: NTE2533 Silicon NPN Transistor High–Definition Color Display Horizontal Deflection Output Features: D High Speed: tf = 100ns Typ D High Breakdown Voltage: VCBO = 1500V D High Reliability Absolute Maximum Ratings: TA = +25°C unless otherwise specified	Original	PDF	NTE2533 100ns 100mA, NPN VCEO 800V NTE2533
NTE2538 Abstract: No abstract text available Text: NTE2538 Silicon NPN Transistor High Voltage, High Current Switch Features: D High Breakdown Voltage and Reliability D Fast Switching Speed D Wide ASO Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V	Original	PDF	NTE2538 NTE2538
NTE2531 Abstract: pnp 400v 4a to251 transistor pnp 30V 2A 1W NTE2530 Text: NTE2530 NPN & NTE2531 (PNP) Silicon Complementary Transistors High Voltage Driver TO251 Features: D High Current Capacity: IC = 2A D High Breakdown Voltage: VCEO = 400V Min D TO251 Type Package Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)	Original	PDF	NTE2530 NTE2531 10IB1 -10IB2 500mA, NTE2531 pnp 400v 4a to251 transistor pnp 30V 2A 1W NTE2530
pnp 400v 4a Abstract: PNP 400V NTE2530 NTE2531 POWER TRANSISTORS 10A 400v pnp NTE253 Text: NTE2530 NPN & NTE2531 (PNP) Silicon Complementary Transistors High Voltage Driver Features: D High Current Capacity: IC = 2A D High Breakdown Voltage: VCEO = 400V Min Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V	Original	PDF	NTE2530 NTE2531 10IB1 -10IB2 500mA, pnp 400v 4a PNP 400V NTE2530 NTE2531 POWER TRANSISTORS 10A 400v pnp NTE253
10MILLISECOND Abstract: NTE253 74 ttl Text: NTE2532 Integrated Circuit NMOS, 32K EPROM, 300ns Description: The NTE2532 is a 32,768–bit, ultraviolet–light–erasable, electrically–programmable read–only memory in a 24–Lead DIP type package. This device is fabricated using N–channel silicon–gate	Original	PDF	NTE2532 300ns NTE2532 10MILLISECOND NTE253 74 ttl
NTE199 Abstract: NTE2324 NTE262 NTE109 NTE3098 nte222 NTE290A nte184 NTE192A NTE309K Text: Semiconductor Directory Mfr.Õs Type 13 Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page MPX2010GS MPX2050DP MPX2050GP MPX2100A MPX2100AP 15.08 17.27 17.69 17.74 14.57 MOT	Original	PDF	MPX2010GS MTP75N06HD NTE102A NTE2312 MPX2050DP MTP8N50E NTE103 NTE2315 MPX2050GP MTW10N100E NTE199 NTE2324 NTE262 NTE109 NTE3098 nte222 NTE290A nte184 NTE192A NTE309K
STk442-130 Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717 Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components	Original	PDF	100-up) STk442-130 M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
123AP Abstract: NTE159 NTE123AP NTE290A 935-6072 NTE184 NTE199 NTE128 NTE293 NTE130 Text: NTE Electronics Transistors Bi-Polar Transistors Ñ Continued Stock No. Mfr.Õs Type Polarity and Material Description and Application 935-0755 935-0760 935-0840 935-0841 935-0845 935-0855 107 108 123A 123AP 124 126 NPN-Si NPN-Si NPN-Si NPN-Si NPN-Si PNP-Ge	Original	PDF	123AP NTE159) NTE396) NTE375) NTE159 NTE123AP NTE290A 935-6072 NTE184 NTE199 NTE128 NTE293 NTE130

Untitled Abstract: No abstract text available Text: MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE2056 16-Lead DIP, See Diag. 249 8-B it Multiplying D/A Converter Range Control 0 Compensation A6 n 0 A7 0 V ret(-) A 5B ^ A1 Q 0 A8 (LSB) A2 B 0 Data Out a: Q A7 A3 Q Q Data In A 2 g 0 A6 A4 Q j A0 Q	OCR Scan	PDF	NTE2056 16-Lead NTE2102 350ns NTE2104 200ns NTE2107 22-Lead
Untitled Abstract: No abstract text available Text: BI-POLAR TRANSISTORS Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain Maximum Collector Power Dissipation (Watts) Typical Freq. (MHz) Case Style Diag. No. Maximum Collector Current (Amps) BVCeo BVEbo	OCR Scan	PDF	NTE248) NTE247) NTE250) NTE275) NTE244) NTE243) NTE246) NTE245) D003SSD
a5 gnd Abstract: NTE4164 NTE2117 NTE2164 BB 298 NTE2102 64k dynamic RAM 64k nmos static ram NTE2114 NTE2128 Text: MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE2056 16-Lead DIP, See Diag. 249 8 -B it Multiplying D/A Converter NTE2102 16-Lead DIP, See Diag. 249 NMOS, 1K Static RAM (SRAM), 350ns NTE2104 16-Lead DIP, See Diag. 249 NMOS, 4K Dynamic RAM (DRAM), 200ns	OCR Scan	PDF	NTE2056 16-Lead NTE2102 350ns NTE2104 200ns NTE2107 22-Lead a5 gnd NTE4164 NTE2117 NTE2164 BB 298 64k dynamic RAM 64k nmos static ram NTE2114 NTE2128

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NTE253 Datasheets (12)

NTE253 Datasheets Context Search

NTE2534

NTE2539

PNP Monolithic Transistor Pair

NPN VCEO 800V

Untitled

Untitled

NPN VCEO 800V

NTE2538

NTE2531

pnp 400v 4a

10MILLISECOND

NTE199

STk442-130

123AP

Untitled

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a5 gnd