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    NTE299 Search Results

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    NTE299 Price and Stock

    NTE Electronics Inc NTE2999

    Power Mosfet N-Channel 500V Id=10A To-220 Full Pack Case High Speed Switch Rds=0.73 Ohm Typ Rohs Compliant: Yes |Nte Electronics NTE2999
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    NTE Electronics Inc NTE2995

    Power Mosfet N-Channel 600V Id=10A To-220 Case High Speed Switch Rohs Compliant: Yes |Nte Electronics NTE2995
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    TME NTE2995 12 1
    • 1 $6.05
    • 10 $4.81
    • 100 $4.32
    • 1000 $4.32
    • 10000 $4.32
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    NTE Electronics Inc NTE2998

    Power Mosfet P-Channel 200V Id=8A To-3 Case High Speed Switch |Nte Electronics NTE2998
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    NTE Electronics Inc NTE2993

    Mosfet, N Channel, 400V, 0.4Ohm, 14A, To-3; Channel Type:N Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:14A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2V |Nte Electronics NTE2993
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    TME NTE2993 3 1
    • 1 $36.4
    • 10 $28.9
    • 100 $26
    • 1000 $26
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    NTE Electronics Inc NTE2996

    N Channel Mosfet, 60V, 84A, To-220; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:84A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Nte Electronics NTE2996
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    NTE299 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NTE299 NTE Electronics Silicon NPN Transistor RF Power Amp, Driver Original PDF
    NTE299 NTE Electronics Bipolar Transistors Scan PDF
    NTE2991 NTE Electronics MOSFET N-Channel, Enhancement Mode High Speed Switch Original PDF
    NTE2992 NTE Electronics MOSFET N-Channel, Enhancement Mode High Speed Switch Original PDF
    NTE2993 NTE Electronics MOSFET N-Channel, Enhancement Mode High Speed Switch Original PDF
    NTE2996 NTE Electronics MOSFET N-Channel, Enhancement Mode High Speed Switch Original PDF
    NTE2999 NTE Electronics MOSFET N-Channel, Enhancement Mode High Speed Switch Original PDF

    NTE299 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NTE2906

    Abstract: NTE2998 NTE290
    Text: NTE2906 MOSFET N−Channel, Enhancement Mode High Speed Switch Compl to NTE2998 D Features: D High Speed Switching D High Voltage D High Energy Rating D Enhancement Mode D Integral Protection Diode G S Absolute Maximum Ratings: (TC = +25C unless otherwise specified)


    Original     		PDF NTE2906 NTE2998) NTE2906 NTE2998 NTE290

    NTE2996

    Abstract: No abstract text available
    Text: NTE2996 MOSFET N-Channel, Enhancement Mode High Speed Switch Features: D Ultra Low On-Resistance D Dynamic dv/dt Rating D +175°C Operating Temperature D Fast Switching D Fully Avalanche Rated Absolute Maximum Ratings: Drain Current, ID Continuous VGS = 10V


    Original     		PDF NTE2996 00A/s, NTE2996

    NTE2996

    Abstract: No abstract text available
    Text: NTE2996 MOSFET N−Channel, Enhancement Mode High Speed Switch Features: D Ultra Low On−Resistance D Dynamic dv/dt Rating D +175°C Operating Temperature D Fast Switching D Fully Avalanche Rated Absolute Maximum Ratings: Drain Current, ID Continuous VGS = 10V


    Original     		PDF NTE2996 NTE2996

    NTE2998

    Abstract: p-channel 200V
    Text: NTE2998 MOSFET P−Channel, Enhancement Mode High Speed Switch D Features: D High Speed Switching D High Voltage D High Energy Rating D Enhancement Mode D Integral Protection Diode G S Absolute Maximum Ratings: TC = +25°C unless otherwise specified Drain−Source Voltage, VDSX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V


    Original     		PDF NTE2998 NTE2998 p-channel 200V

    NTE2995

    Abstract: No abstract text available
    Text: NTE2995 MOSFET N−Channel, Enhancement Mode High Speed Switch Features: D RDS on = 0.65Ω Typical D Extremely High dv/dt Capability D Gate Charge Minimized D Gate−to−Source Zener Diode Protected Applications: D High Current, High Speed Switching D Ideal for Off−Line Power Supplies, Adaptor and PFC


    Original     		PDF NTE2995 NTE2995

    NTE2991

    Abstract: No abstract text available
    Text: NTE2991 MOSFET N−Channel, Enhancement Mode High Speed Switch Features: D Ultra Low On−Resistance D Dynamic dv/dt Rating D +175°C Operating Temperature D Fast Switching D Fully Avalanche Rated Absolute Maximum Ratings: Drain Current, ID Continuous VGS = 10V


    Original     		PDF NTE2991 NTE2991

    NTE2998

    Abstract: NTE2906 p-channel 200V NTE299
    Text: NTE2998 MOSFET P−Channel, Enhancement Mode High Speed Switch Compl to NTE2906 D Features: D High Speed Switching D High Voltage D High Energy Rating D Enhancement Mode D Integral Protection Diode G S Absolute Maximum Ratings: (TC = +25C unless otherwise specified)


    Original     		PDF NTE2998 NTE2906) NTE2998 NTE2906 p-channel 200V NTE299

    NTE2994

    Abstract: mosfet 300V 10A datasheet
    Text: NTE2994 MOSFET N−Channel, Enhancement Mode High Speed Switch Absolute Maximum Ratings: TC = +25°C unless otherwise specified Drain−Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V


    Original     		PDF NTE2994 NTE2994 mosfet 300V 10A datasheet

    NTE2993

    Abstract: No abstract text available
    Text: NTE2993 MOSFET N−Channel, Enhancement Mode High Speed Switch Features: D Repetitive Avalanche Ratings D Dynamic dv/dt Rating D Simple Drive Requirements D Ease of Paralleling Absolute Maximum Ratings: Drain−Source Voltage VGS = 0V, ID = 1mA , VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V


    Original     		PDF NTE2993 NTE2993

    NTE299

    Abstract: No abstract text available
    Text: NTE299 Silicon NPN Transistor RF Power Amp, Driver Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V


    Original     		PDF NTE299 27MHz, 166mA NTE299

    d-215 diode

    Abstract: NTE2997
    Text: NTE2997 MOSFET P−Channel, Enhancement Mode High Speed Switch Features: D Good Frequency Characteristics D High Speed Switching D Wide Area of Safe Operation D Enhancement Mode D Equipped with Gate Protection Diodes D G S Applications: D Low Frequency Power Amplifier


    Original     		PDF NTE2997 d-215 diode NTE2997

    Untitled

    Abstract: No abstract text available
    Text: NTE2994 MOSFET N−Channel, Enhancement Mode High Speed Switch Absolute Maximum Ratings: TC = +25°C unless otherwise specified Drain−Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V


    Original     		PDF NTE2994

    Untitled

    Abstract: No abstract text available
    Text: NTE2993 MOSFET N−Channel, Enhancement Mode High Speed Switch Features: D Fast Switching D Low Drive Current D Ease of Paralleling D No Second Breakdown D Excellent Temperature Stability Absolute Maximum Ratings: TA = +25°C unless otherwise specified Drain−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V


    Original     		PDF NTE2993

    NTE2999

    Abstract: MOSFET 300V
    Text: NTE2999 MOSFET N−Channel, Enhancement Mode High Speed Switch Features: D High Speed Switching D Low On−Resistance D No Secondary Breakdown D Low Driving Power D Avalanche−Proof D G Applications: D Switching Regulators D UPS Uninterruptible Power Supply


    Original     		PDF NTE2999 NTE2999 MOSFET 300V

    NTE2990

    Abstract: Power MOSFET P-Channel 250V 50A
    Text: NTE2990 MOSFET P−Channel, Enhancement Mode High Speed Switch Features: D Low Drain−Source On−Resistance D Low Input Capacitance D High Avalanche Capability Ratings Applications: D Switching Regulators D UPS D DC−DC Converters D General Purpose Power Amplifier


    Original     		PDF NTE2990 NTE2990 Power MOSFET P-Channel 250V 50A

    SSH6N80

    Abstract: ptc6063 equivalent MTW15N25E SPA08N80C3 NTE2393 NTE99 SE7055 MTP4N90 SK3024 se5020
    Text: STI Type: MTM8N55 Notes: Breakdown Voltage: 550 Continuous Current: 8 RDS on Ohm: .50 Trans Conductance Mhos: 2.0 Trans Conductance A: 4.5 Gate Threshold min: Gate Threshold max: Resistance Switching ton: 70 Resistance Switching toff: 430 Resistance Switching ID: 4.0


    Original     		PDF MTM8N55 O-204AA/TO-3 MTM8N60 MTM8N40 O-262/I-2 SSI2N60B SSI4N60B SSH6N80 ptc6063 equivalent MTW15N25E SPA08N80C3 NTE2393 NTE99 SE7055 MTP4N90 SK3024 se5020