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    NTE63 Price and Stock

    NTE Electronics Inc

    NTE Electronics Inc NTE6354

    Diode 400V 300A 2-Pin DO-9
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical NTE6354 1 1
    • 1 $7.582
    • 10 $7.582
    • 100 $7.582
    • 1000 $7.582
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    Arrow Electronics NTE6354 1 1
    • 1 $7.582
    • 10 $7.582
    • 100 $7.582
    • 1000 $7.582
    • 10000 $7.582
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    NTE Electronics Inc NTE6359

    Diode, Rectifier, 300A, 1Kv, Do-9; Repetitive Peak Reverse Voltage:1Kv; Average Forward Current:300A; Forward Voltage Max:-; Diode Module Configuration:-; Diode Case Style:Do-9; No. Of Pins:2Pins; Operating Temperature Max:180°C Rohs Compliant: Yes |Nte Electronics NTE6359
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark NTE6359 Bulk 1
    • 1 -
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    Quest Components NTE6359 1
    • 1 $116.6
    • 10 $116.6
    • 100 $116.6
    • 1000 $116.6
    • 10000 $116.6
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    NTE Electronics Inc NTE6355

    Diode, Rectifier, 300A, 400V, Do-9; Repetitive Peak Reverse Voltage:400V; Average Forward Current:300A; Forward Voltage Max:-; Diode Module Configuration:-; Diode Case Style:Do-9; No. Of Pins:2Pins; Operating Temperature Max:180°C Rohs Compliant: Yes |Nte Electronics NTE6355
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark NTE6355 Bulk 1
    • 1 -
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    NTE Electronics Inc NTE6356

    Standard Diode, 300A, 600V, Do-9; Repetitive Peak Reverse Voltage:600V; Average Forward Current:300A; Forward Voltage Max:-; Diode Module Configuration:-; Diode Case Style:Do-9; No. Of Pins:2Pins; Operating Temperature Max:180°C Rohs Compliant: Yes |Nte Electronics NTE6356
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark NTE6356 Bulk 1
    • 1 -
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    NTE Electronics Inc NTE6357

    Standard Diode, 300A, 600V, Do-9; Repetitive Peak Reverse Voltage:600V; Average Forward Current:300A; Forward Voltage Max:-; Diode Module Configuration:-; Diode Case Style:Do-9; No. Of Pins:2Pins; Operating Temperature Max:180°C Rohs Compliant: Yes |Nte Electronics NTE6357
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark NTE6357 Bulk 1
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    NTE63 Datasheets (14)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    NTE63 NTE Electronics Silicon NPN Transistor High Gain, Low Noise Amp Original PDF
    NTE630 NTE Electronics Silicon Rectifier Fast Recovery, Dual, Center Tap Original PDF
    NTE631 NTE Electronics Silicon Rectifier Diode High-Speed Switch (Surface Mount) Original PDF
    NTE633 NTE Electronics Silicon Rectifier Diode High Speed Switching (Surface Mount) Original PDF
    NTE6354 NTE Electronics Silicon Power Rectifier Diode, 300 Amp Original PDF
    NTE6355 NTE Electronics Silicon Power Rectifier Diode, 300 Amp Original PDF
    NTE6356 NTE Electronics Silicon Power Rectifier Diode, 300 Amp Original PDF
    NTE6357 NTE Electronics Silicon power rectifier diode, 300 Amp. Anode to case. Max repetitive peak reverse voltage 600V. Original PDF
    NTE6358 NTE Electronics Silicon Power Rectifier Diode, 300 Amp Original PDF
    NTE6359 NTE Electronics Silicon Power Rectifier Diode, 300 Amp Original PDF
    NTE6362 NTE Electronics Silicon power rectifier diode, 300 Amp. Cathode to case. Max repetitive peak reverse voltage 1400V. Original PDF
    NTE6363 NTE Electronics Silicon Power Rectifier Diode, 300 Amp Original PDF
    NTE6364 NTE Electronics Silicon Power Rectifier Diode, 300 Amp Original PDF
    NTE6365 NTE Electronics Silicon Power Rectifier Diode, 300 Amp Original PDF

    NTE63 Datasheets Context Search

    Catalog Datasheet
    Type
    Document Tags
    PDF

    NTE631

    Abstract: NTE633
    Text: NTE633 Silicon Rectifier Diode High Speed Switching Surface Mount Description: The NTE631 is a high−speed switching diode fabricated in planar technology and encapsulated in a very small rectangular ceramic SMD package. Features: D Small Ceramic SMD Package


    Original     		NTE633 NTE631 150mA NTE633 PDF

    NTE638

    Abstract: No abstract text available
    Text: NTE638 Damper Diode for TV Applications Absolute Maximum Ratings: Peak Reverse Voltage, VRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1600V Average Rectified Forward Current, IF AV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A


    Original     		NTE638 100mA, 200mA, NTE638 PDF

    NTE632

    Abstract: No abstract text available
    Text: NTE632 Silicon Rectifier Diode Dual Switching Series Pair Surface Mount Features: D Small Ceramic SMD Package D High Switching Speed D High Conductance D SOT−23 Molded Plastic Case Applications: D General Purpose Switching Applications Absolute Maximum Ratings: (TA = +25°C, unless otherwise specified)


    Original     		NTE632 OT-23 150mA NTE632 PDF

    NTE6368

    Abstract: 4500a NTE6369
    Text: NTE6368 & NTE6369 Silicon Power Rectifier Stud Mount, Fast Recovery, 250 Amp Features: D Fast Recovery Times D Soft Recovery Characteristics D Standard NTE6368 and Reverse (NTE6369) Polarities D High Surge Current Ratings D High Rated Blocking Voltages Applications:


    Original     		NTE6368 NTE6369 NTE6368) NTE6369) NTE6368 4500a NTE6369 PDF

    NTE6355

    Abstract: NTE6354 NTE6359 NTE6356 NTE6357 NTE6358 NTE6362 NTE6363 NTE6364 NTE6365
    Text: NTE6354 thru NTE6365 Silicon Power Rectifier Diode 300 Amp, DO9 Features: D Diffused Diode D High Voltage Ratings up to 1600 Volts D High Surge Current Capabilities D Available in Anode−to−Case or Cathode−to−Case Style Ratings and Characteristics:


    Original     		NTE6354 NTE6365 NTE6354, NTE6355* NTE6356, NTE6357* NTE6358, NTE6359* NTE6355 NTE6359 NTE6356 NTE6357 NTE6358 NTE6362 NTE6363 NTE6364 NTE6365 PDF

    Untitled

    Abstract: No abstract text available
    Text: NTE639 General Purpose Silicon Rectifier High Voltage, Standard Recovery DO201AD Type Package Features: D Diffused Junction D Low Forward Voltage Drop D High Current Capability D High Reliability D High Surge Current Capability Maximum Ratings and Electrical Characteristics:


    Original     		NTE639 DO201AD 1255C 1505C 205C/W PDF

    NTE631

    Abstract: No abstract text available
    Text: NTE631 Silicon Rectifier Diode High−Speed Switch Surface Mount Description: The NTE631 is a high−speed switching diode fabricated in planar technology and encapsulated in a very small rectangular ceramic SMD package. Features: D Small Ceramic SMD Package


    Original     		NTE631 NTE631 PDF

    NTE6355

    Abstract: NTE6358
    Text: NTE6354 thru NTE6365 Silicon Power Rectifier Diode, 300 Amp Features: D Diffused Diode D High Voltage Ratings up to 1600 Volts D High Surge Current Capabilities D Available in Anode–to–Case or Cathode–to–Case Style Ratings and Characteristics: Average Forward Current TC = +130°C Max , IF(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300A


    Original     		NTE6354 NTE6365 NTE6354, NTE6355* NTE6356, NTE6357* NTE6358, NTE6359* NTE6355 NTE6358 PDF

    NTE6357

    Abstract: NTE6355 151000 NTE6354 NTE6356 NTE6358 NTE6359 NTE6362 NTE6363 NTE6364
    Text: NTE6354 thru NTE6365 Silicon Power Rectifier Diode, 300 Amp Features: D Diffused Diode D High Voltage Ratings up to 1600 Volts D High Surge Current Capabilities D Available in Anode–to–Case or Cathode–to–Case Style Ratings and Characteristics: Average Forward Current TC = +130°C Max , IF(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300A


    Original     		NTE6354 NTE6365 NTE6354, NTE6355* NTE6356, NTE6357* NTE6358, NTE6359* NTE6357 NTE6355 151000 NTE6356 NTE6358 NTE6359 NTE6362 NTE6363 NTE6364 PDF

    NTE634

    Abstract: 400v 20A ultra fast recovery diode RESISTANCE 46K NTE635 NTE636
    Text: NTE634 thru NTE636 2 Amp Ultra Fast Recovery Controlled Avalanche Rectifiers Description: The NTE634, NTE635, and NTE636 are 2A Controlled Avalanche Rectifiers encased in a rugged glass SOD57 axial lead package, using a high temperature alloyed construction. These packages are


    Original     		NTE634 NTE636 NTE634, NTE635, NTE636 NTE634 NTE635 400v 20A ultra fast recovery diode RESISTANCE 46K NTE635 PDF

    NTE63

    Abstract: No abstract text available
    Text: NTE63 Silicon NPN Transistor High Gain, Low Noise Amp Description: The NTE63 is a silicon NPN high frequency transistor designed primarily for use in high–gain, low noise tuned and wiseband small–signal amplifiers and applications requiring fast switching times.


    Original     		NTE63 NTE63 PDF

    NTE637

    Abstract: No abstract text available
    Text: NTE637 Schottky Barrier Diode Surface Mount Absolute Maximum Ratings: (Ta = +25°C, Note 1, unless otherwise specified) Repetitive Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V


    Original     		NTE637 200mA 600mA 290mW 100mA NTE637 PDF

    NTE629

    Abstract: NTE630
    Text: NTE629 & NTE630 Silicon Rectifier Fast Recovery, Dual, Center Tap Description: The NTE629 and NTE630 are dual, fast recovery silicon rectifiers in a TO220 type package designed for special applications such as DC power supplies, inverters, converters, ultrasonic systems, choppers and low RF interference.


    Original     		NTE629 NTE630 NTE629 NTE630 PDF

    NTE7232

    Abstract: NTE2682 NTE2684 NTE7239 pdf/ES-F8DB-14A464-A
    Text: NTE SEMICONDUCTORS ADDED SINCE MAY 2013 NTE PART NO. DESCRIPTION Datasheet Link NTE573-1 RECTIFIERS Schottky Barrier Rectifier, 100V, 5 Amp, DO‐201AD Case NTE573‐2 Schottky Barrier Rectifier, 200V, 5 Amp, DO‐201AD Case


    Original     		NTE573â 201ADÂ com/specs/500to599/pdf/nte573â NTE639 214AAÂ NTE7232 NTE2682 NTE2684 NTE7239 pdf/ES-F8DB-14A464-A PDF