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    NTMFS4837NHT1G Price and Stock

    onsemi NTMFS4837NHT1G

    MOSFET N-CH 30V 10.2A/75A 5DFN
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    DigiKey NTMFS4837NHT1G Digi-Reel 1
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    NTMFS4837NHT1G Cut Tape 1
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    NTMFS4837NHT1G Reel
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    Avnet Americas NTMFS4837NHT1G Reel 3,000
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    Rochester Electronics NTMFS4837NHT1G 17,115 1
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    Rochester Electronics LLC NTMFS4837NHT1G

    MOSFET N-CH 30V 10.2A/75A 5DFN
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    DigiKey NTMFS4837NHT1G Bulk 734
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    NTMFS4837NHT1G Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NTMFS4837NHT1G On Semiconductor Power MOSFET 30 V, 75 A, Single N-Channel Original PDF

    NTMFS4837NHT1G Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    4837NH

    Abstract: No abstract text available
    Text: NTMFS4837NH Power MOSFET 30 V, 75 A, Single N-Channel, SO-8 FL Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăLow RG •ăThese are Pb-Free Devices*


    Original     		NTMFS4837NH NTMFS4837NH/D 4837NH PDF

    4837NH

    Abstract: NTMFS4837NHT1G NTMFS4837NHT3G
    Text: NTMFS4837NH Power MOSFET 30 V, 75 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices*


    Original     		NTMFS4837NH AND8195/D NTMFS4837NH/D 4837NH NTMFS4837NHT1G NTMFS4837NHT3G PDF

    4837NH

    Abstract: NTMFS4837NHT1G NTMFS4837NHT3G 4837n
    Text: NTMFS4837NH Power MOSFET 30 V, 75 A, Single N-Channel, SO-8 FL Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăLow RG •ăThese are Pb-Free Devices*


    Original     		NTMFS4837NH NTMFS4837NH/D 4837NH NTMFS4837NHT1G NTMFS4837NHT3G 4837n PDF

    4837NH

    Abstract: NTMFS4837NHT1G NTMFS4837NHT3G
    Text: NTMFS4837NH Power MOSFET 30 V, 75 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices*


    Original     		NTMFS4837NH AND8195/D NTMFS4837NH/D 4837NH NTMFS4837NHT1G NTMFS4837NHT3G PDF

    4837NH

    Abstract: No abstract text available
    Text: NTMFS4837NH Power MOSFET 30 V, 75 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices


    Original     		NTMFS4837NH AND8195/D NTMFS4837NH/D 4837NH PDF