Untitled
Abstract: No abstract text available
Text: Data Sheet Schottky barrier diode RB215T-60 Applications Switching power supply Dimensions Unit : mm Structure (1) (2) (3) Features 1)Cathode common type.(TO-220) 2)Low IR 3)High reliability Construcion Silicon epitaxal planar ROHM : O220FN
|
Original
|
RB215T-60
O-220)
O220FN
60Hz/1cyc)
200pF
100pF
R1120A
|
PDF
|
RFN20T
Abstract: No abstract text available
Text: RFN20TB4S Data Sheet Super Fast Recovery Diode RFN20TB4S zSerise Standard Fast Recovery zDimensions Unit : mm zStructure 㻠㻚㻡㼼㻜㻚㻟 䚷䚷䚷㻌㻜㻚㻝 㻞㻚㻤㼼㻜㻚㻞 䚷䚷䚷㻌㻜㻚㻝 zFeatures 1)Low switching loss 2)High current overload capacity
|
Original
|
RFN20TB4S
RFN20T
O220FN
R1120A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Data Sheet Schottky barrier diode RB225T-60 Dimensions Unit : mm Applications Switching power supply Structure Features 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability (1) (2) (3) Construction Silicon epitaxial planar
|
Original
|
RB225T-60
O-220)
O220FN
60Hz/1cyc)
200pF
100pF
R1120A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Data Sheet Super Fast Recovery Diode RFN20TB4S zSerise Standard Fast Recovery zDimensions Unit : mm zStructure 㻠㻚㻡㼼㻜㻚㻟 䚷䚷䚷㻌㻜㻚㻝 㻞㻚㻤㼼㻜㻚㻞 䚷䚷䚷㻌㻜㻚㻝 zFeatures 1)Low switching loss 2)High current overload capacity
|
Original
|
RFN20TB4S
RFN20T
O220FN
R1120A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Data Sheet Schottky barrier diode RB215T-90 Applications General rectification Common cathode dual chip Dimensions (Unit : mm) Structure (1) (2) (3) Features 1) Small power mold type.(PMDU) 2) Low IR 3) High reliability Construction Silicon epitaxial planar
|
Original
|
RB215T-90
O220FN
60Hz/1cyc)
200pF
100pF
R1120A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Data Sheet Schottky Barrier Diode RB228T100 lApplications Switching power supply lDimensions Unit : mm 8.0 lFeatures 1)Cathode common type. 2)Low IR 3)High reliability 4)AEC-Q101 qualified lStructure lConstruction Silicon epitaxial planer 13.5MIN 1.2 1.3
|
Original
|
RB228T100
AEC-Q101
O220FN
R1120A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Data Sheet Schottky Barrier Diode RB225T-40 Applications Switching power supply Dimensions Unit : mm Structure (1) (2) (3) Features 1)Cathode common type.(TO-220) 2)Low IR 3)High reliability 13.5Min. Construction Silicon epitaxial planer
|
Original
|
RB225T-40
O-220)
O220FN
200pF
100pF
R1120A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Data Sheet Fast recovery diodes RF2001T3D Applications General rectification Dimensions Unit : mm Structure Features 1) Cathode common type. (TO-220) 2) Ultra Low V F 3) Very fast recovery 4) Low switching loss (1) (2) (3) Construction Silicon epitaxial planar
|
Original
|
RF2001T3D
O-220)
O220FN
60Hz/1cyc)
200pF
100pF
R1120A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN20TB4SFH zSerise Standard Fast Recovery zDimensions Unit : mm zStructure 㻠㻚㻡㼼㻜㻚㻟 䚷䚷䚷㻌㻜㻚㻝 㻞㻚㻤㼼㻜㻚㻞 䚷䚷䚷㻌㻜㻚㻝 zFeatures 1)Low switching loss 2)High current overload capacity
|
Original
|
AEC-Q101
RFN20TB4SFH
RFN20T
O220FN
R1120A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Data Sheet Super Fast Recovery Diode RFN20TB4S zSerise Standard Fast Recovery zDimensions Unit : mm zStructure 㻠㻚㻡㼼㻜㻚㻟 䚷䚷䚷㻌㻜㻚㻝 㻞㻚㻤㼼㻜㻚㻞 䚷䚷䚷㻌㻜㻚㻝 zFeatures 1)Low switching loss 2)High current overload capacity
|
Original
|
RFN20TB4S
RFN20T
O220FN
R1120A
|
PDF
|