OF TRANSISTORS Search Results

OF TRANSISTORS Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

OF TRANSISTORS Price and Stock

Filter by Manufacturer


onsemi MMBT3906WT1G General Purpose Bipolar Transistor PNP Bipolar Transistor
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	MMBT3906WT1G		60,000			1 - 10 - 100 - 1000 - 10000 $0.0131	Buy Now
onsemi MMBT100 Bipolar Transistors - BJT NPN Transistor General Purpose
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	MMBT100		45,000			1 - 10 - 100 - 1000 - 10000 $0.0323	Buy Now
onsemi BC856BDW1T1G Bipolar Transistors - BJT PNP Transistor General Purpose
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	BC856BDW1T1G		27,000			1 - 10 - 100 - 1000 - 10000 $0.0204	Buy Now
onsemi MPSA05RA Bipolar Transistors - BJT NPN Transistor Medium Power
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	MPSA05RA		12,000			1 - 10 - 100 - 1000 - 10000 $0.0742	Buy Now
Microchip Technology Inc 2N3442 Bipolar Transistors - BJT NPN Transistor
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	2N3442					1 - 10 - 100 $35.24 1000 $35.24 10000 $35.24	Buy Now

Find more OF TRANSISTORS price and stock on Findchips.com

OF TRANSISTORS Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MC33091AD Abstract: KK33091A KK33091AD KK33091AN MS-012AA MS-001-BA Text: TECHNICAL DATA Powerful High-grade FET driver KK33091A Description of basic functions. The capability of handling high voltages on power line attributed to transient commutation of loads in conditions of automobile exploitation. Load of microcircuit is a device on the base of MOS transistors	Original	KK33091A KK33091AN KK33091AD 012AA) MC33091AD KK33091A MS-012AA MS-001-BA	PDF
IL33091 Abstract: IL33091AD mos transistor IL33091A IL33091AN MC33091AD MS-012AA Text: TECHNICAL DATA Powerful High-grade FET driver IL33091A Description of basic functions. The capability of handling high voltages on power line attributed to transient commutation of loads in conditions of automobile exploitation. Load of microcircuit is a device on the base of MOS transistors	Original	IL33091A IL33091AN IL33091AD 012AA) IL33091 mos transistor IL33091A MC33091AD MS-012AA	PDF
BLV 730 Abstract: COE82101 BLY90 BLW60 BLV25 BLW89 rf transformer philips india SC-10 amplifier Blw89 transistor blv 33 transistor Text: TECHNICAL PUBLICATION Considerations on efficiency of the RF power transistors in the different classes of operation COE82101 Philips Semiconductors Considerations on efficiency of the RF power transistors in the different classes of operation CONTENTS 1 SUMMARY	Original	COE82101 SCA57 BLV 730 COE82101 BLY90 BLW60 BLV25 BLW89 rf transformer philips india SC-10 amplifier Blw89 transistor blv 33 transistor	PDF
2SC5083 Abstract: ROHM FTL 2sc4043 TO220SD TO220FN 2SC1740S 2SC1809S 2SC2058S 2SC2926S 2SC4010 Text: Design Support Document RECOMMENDABLE CONDITION OF SOLDERING LEAD TYPE TRANSISTORSUR CONDITION OF SOLDERING FOR LEAD TYPE TRANSISTOR LEAD FREE Sn-3Ag-0.5Cu VERSION CONTENTS RECOMMENDABLE CONDITION OF SOLDERING DIP 2/3 RECOMMENDABLE CONDITION OF HAND SOLDERING	Original	R1010A 2SC5083 ROHM FTL 2sc4043 TO220SD TO220FN 2SC1740S 2SC1809S 2SC2058S 2SC2926S 2SC4010	PDF
ELECTRONIC BALLAST DIAGRAM 1000W Abstract: No abstract text available Text: DMS150B42N60 DMS Electronic Components Push-pull controller for electronic ballast with power transistors DMS150B42N60 Is the high-speed controller of electronic ballast the using method OSS One Cycle Control - control of size of a current in each step of	Original	DMS150B42N60 DMS150B42N60 ELECTRONIC BALLAST DIAGRAM 1000W	PDF
Untitled Abstract: No abstract text available Text: Order this document by MC1472/D MC1472 Dual Peripheral-High-Voltage Positive NAND" Driver The dual driver consists of a pair of PNP buffered AND gates connected to the bases of a pair of high voltage NPN transistors. They are similar to the MC75452 drivers but with the added advantages of: 1 70 V capability	Original	MC1472/D MC1472 MC75452 MC1472 MC1472/D*	PDF
RFD16N05 Abstract: rfp50n06 DB223B DIODE DATABOOK RFP22N10 rfp50n06 substitute AN9321 RFP3055 RFP45N06 RFP70N06 Text: Practical Aspects of Using PowerMOS Transistors to Drive Inductive Loads Application Note Introduction Many of the more recent applications of PowerMOS transistors, particularly low voltage devices, have been as solenoid drivers. In this type of application the device is simply used	Original		PDF
2sc5083 Abstract: TO220FN water level control circuit diagram to126 to126 case TO220SD water level controller circuit diagram liquid (WATER) Level Controller TO126 package TO126 transistor Text: Soldering conditions Leaded type Transistors Condition of soldering for Leaded type Transistors Lead free paste Sn-3Ag-0.5Cu version CONTENTS Recommended condition of flow soldering 2/3 Condition of hand soldering 2/3 Tolerance range for heatproof of soldering	Original		PDF
pine alpha st-100s arakawa chemical Abstract: 2SB1051K tssop8 package 750H ST-100S Text: Soldering conditions Surface mount type Transistors Condition of soldering for Surface mount type Transistors Lead free paste Sn-3Ag-0.5Cu version CONTENTS Recommended condition of reflow soldering 2/4 Recommended condition of flow soldering 2/4 Condition of hand soldering	Original		PDF
LM11CN Abstract: No abstract text available Text: LM11C, CL Precision Operational Amplifiers The LM11C is a precision, low drift operational amplifier providing the best features of existing FET and Bipolar op amps. Implementation of super gain transistors allows reduction of input bias currents by an order of magnitude	Original	LM11C, LM11C LM308A. LM11CN	PDF
pepi c Abstract: 2SC4938 2SD1664 2SD1760 G746 SC101 mosfet nepi Text: Operation notes Transistors Operation notes !Selecting semiconductor devices The reliability of semiconductor devices is determined primarily by conditions of use. When using semiconductors, pay careful attention to any changes in conditions and be aware of the specifications of each device. Absolute maximum	Original	2SC4938) 2SD1760) 2SD1664) pepi c 2SC4938 2SD1664 2SD1760 G746 SC101 mosfet nepi	PDF
USE OF TRANSISTOR Abstract: pepi c thermal transistor and or IC Ultrasonic pepi testing good or bad electronic components circuit TO-220FN pn junction diode structure shin-etsu Chemical Text: Operation notes Transistors Operation notes zSelecting semiconductor devices The reliability of semiconductor devices is determined primarily by conditions of use. When using semiconductors, pay careful attention to any changes in conditions and be aware of the specifications of each device. Absolute maximum	Original		PDF
curve tracer Abstract: BUK543-100A BUK553-100A Text: Philips Semiconductors PowerMOS Transistors All manufacturers of power MOSFETs provide a data sheet for every type produced. The purpose of the data sheet is primarily to give an indication as to the capabilities of a particular product. It is also useful for the purpose of	Original		PDF
flyback transformer diagram Abstract: TDA 4862 Small Signal MOSFETs schematic diagram flyback converter BSP 300 12 pin flyback transformer SMD step up transformer switch mode transformer switched mode power tda4862 Text: Miniaturization of Switched Mode Power Supplies by the Use of SIPMOS Small-Signal Transistors with High Blocking Capability Until now, more extensive miniaturization of switched mode power supplies has been held up by the lack of suitable components. One definitive component for switched mode power	Original		PDF

AN-7514 Abstract: fark AN-7517 RFP22N10 RFP3055 RFP45N06 RFP50N06 RFP70N06 ierc heatsink PSD1-2U Text: Practical Aspects of Using PowerMOS Transistors to Drive Inductive Loads Application Note Introduction Title N75 ubct ractil pect of ing werOS an tors ive duce ads) utho ) eyords nter- Many of the more recent applications of PowerMOS transistors, particularly low voltage devices, have been as solenoid	Original		PDF
igbt types Abstract: IGBT snubber for inductive load igbt igbt in smps l series IGBT design drive circuit of IGBT Text: Insulated Gate Bipolar Transistors IGBT The IGBT is a combination of bipolar and MOS technologies. The best features of bipolar transistors are synergistically melded with the voltagecontrolled properties of MOSFETs. Sum mary of various IGBT types. Table 1: Standard devices (page 8)	OCR Scan	-12S3 -12S4 -12G3 -12G4 igbt types IGBT snubber for inductive load igbt igbt in smps l series IGBT design drive circuit of IGBT	PDF
VT1620 Abstract: LM11CN LM308 Text: M MOTOROLA -Precision Operational Amplifiers The LM11C is a precision, low drift operational am plifier providing the best features of existing FET and Bipolar op amps. Implementation of super gain transistors allows reduction of input bias currents by an order of magnitude	OCR Scan	LM11C LM308A. VT1620 LM11CN LM308	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors PowerMOS Transistors All manufacturers of power MOSFETs provide a data sheet for every type produced. The purpose of the data sheet is primarily to give an indication astothe capabilities of a particular product. It is also useful for the purpose of	OCR Scan		PDF
Marking XA XB XC XD XE XF XH XI XJ XK XM Abstract: marking YJ transistors YK NPN RN2608 - RN2908 QF npn Marking 47 marking YB YB MARKING ic marking YK kn marking Text: 3. List of Principal Characteristics of Built-In Resistor Transistors BRT SSM 3. List of Principal Characteristics of Built-In Resistor Transistors (BRT) * 3.1 Sm ail Super M ini Typ e (SSM) Polarity Type No. RN1101 RN1102 RN1103 RN1104 RN1105 RN1106 RN1107	OCR Scan	RN1101 RN1102 RN1103 RN1104 RN1105 RN1106 RN1107 RN1108 RN1109 RN1110 Marking XA XB XC XD XE XF XH XI XJ XK XM marking YJ transistors YK NPN RN2608 - RN2908 QF npn Marking 47 marking YB YB MARKING ic marking YK kn marking	PDF
lm11c Abstract: No abstract text available Text: g MOTOROLA Precision Operational Amplifiers The LM11C is a precision, low drift operational am plifier p' aviding the best features of existing FET and Bipolar op amps. Implementation of super gain transistors allows reduction of input bias currents by an order of magnitude	OCR Scan	LM11C LM308A.	PDF
DTA214Y Abstract: DTA123E DTB114T Text: DIGITAL TRANSISTOR PARTS LIST ALPHA-NUMERIC INDEX OF BASIC PART NUMBER OF DIGITAL TRANSISTORS. THE REGULAR PART NUMBER OF ROHM’S DIGITAL TRANSISTORS IS COMPOSED OF BASIC PART NUMBER AND PACKAGE CODE AND ACCORDING TO VARIATIONS, SUFFIX “ A” IS ADDED. PACKAGE STYLE	OCR Scan	100mA DTA115U, DTC115U, DTA125T, DTC125T DTA113T DTA113Z DTA114E DTA114G DTA114T DTA214Y DTA123E DTB114T	PDF
LM11C Abstract: IC i voltage follower LM11CN LM308A Text: g MOTOROLA Precision O perational A m plifiers The LM11C is a precision, low drift operational amplifier providing the best features of existing FET and Bipolar op amps. Implementation of super gain transistors allows reduction of input bias currents by an order of magnitude	OCR Scan	LM11C LM308A. b3Lj7253 IC i voltage follower LM11CN LM308A	PDF
BUK553-100A Abstract: No abstract text available Text: Philips Semiconductors PowerMOS Transistors All manufacturers of power MOSFETs provide a data sheet for every type produced. The purpose of the data sheet is primarily to give an indication as to the capabilities of a particular product. It is also useful for the purpose of	OCR Scan		PDF
LM11 op amp Abstract: LM11CLN c4082 LM11C "LM11" Text: LM11C LM11CL MOTOROLA SEMICONDUCTOR TECHNICAL DATA Precision Operational Amplifiers The LM11C is a precision, low drift operational amplifier providing the best features of existing FET and Bipolar op amps. Implementation of super gain transistors allows reduction of input bias currents by an order of magnitude over	OCR Scan	LM11C LM11CL LM308A. LM11 op amp LM11CLN c4082 "LM11"	PDF

OF TRANSISTORS Search Results

OF TRANSISTORS Result Highlights (5)

OF TRANSISTORS Price and Stock

onsemi MMBT3906WT1G

onsemi MMBT100

onsemi BC856BDW1T1G

onsemi MPSA05RA

Microchip Technology Inc 2N3442

OF TRANSISTORS Datasheets Context Search

MC33091AD

IL33091

BLV 730

2SC5083

ELECTRONIC BALLAST DIAGRAM 1000W

Untitled

RFD16N05

2sc5083

pine alpha st-100s arakawa chemical

LM11CN

pepi c

USE OF TRANSISTOR

curve tracer

flyback transformer diagram

AN-7514

igbt types

VT1620

Untitled

Marking XA XB XC XD XE XF XH XI XJ XK XM

lm11c

DTA214Y

LM11C

BUK553-100A

LM11 op amp