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    P-CHANNEL DEPLETION Search Results

    P-CHANNEL DEPLETION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    P-CHANNEL DEPLETION Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MPF970

    Abstract: MPF971 MPF910
    Text: MPF970 silicon MPF971 SILICON P-CHANNEL JUNCTION FIELD—EFFECT TRANSISTORS P-CHANNEL Depletion Mode (Type A ) Junction Field-Effect Transistors designed for chopper and high-speed switching applications. JUNCTION FIELD-EFFECT TRANSISTORS M A XIM U M RATINGS


    OCR Scan     		PDF MPF970 MPF971 MPF970 MPF971 MPF910

    MFE4007

    Abstract: mfe 4010 MFE4010 3 DG 1008 MFE4008 MFE4009 MFE4011 MFE4012
    Text: MFE4007 silicon MFE4012 thru P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS . . . depletion mode (Type A) Field-Effect Transistors designed for general-purpose amplifier applications. P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS • Tightly Specified loss Ranges — 2:1 for All Types


    OCR Scan     		PDF MFE4007 MFE4012 MFE4007 mfe 4010 MFE4010 3 DG 1008 MFE4008 MFE4009 MFE4011 MFE4012

    P-Channel Depletion Mosfets

    Abstract: mosfet 2N3796 2N3797 2N3796 MFE825 MFE3002 P-Channel Depletion Mosfet depletion mode mosfet 100 MHz MFE3003 N5484
    Text: MOSFETs Single Gate FIELD-EFFECT TRANSISTORS continued P-CHANNEL Enhancement MOSFETs MOSFETs are available in either depletion/enhancement or enhancement mode (in general, depletion/enhancement devices are operated in the depletion mode and are referred to as depletion devices). They are available in both N- and P-channel,


    OCR Scan     		PDF 2N5486 2N4416 2N4416A 2N5245 3N128* P-Channel Depletion Mosfets mosfet 2N3796 2N3797 2N3796 MFE825 MFE3002 P-Channel Depletion Mosfet depletion mode mosfet 100 MHz MFE3003 N5484

    BSS87

    Abstract: BSP315 SOT223 BSP171 BSS125
    Text: SIPMOS For complete package outlines, refer to pages PO-1 through PO-6 Low Power MOSFETs Type M axim um Ratings N = N Channel P = P Channel BSP17 BSP88 BSP89 BSP92 BSP 125 BSP129* BSP135* BSP149* BSP171 BSP295 BSP296 BSP297 BSP298 BSP299 BSP315 BSP316 BSP317


    OCR Scan     		PDF BSP17 BSP88 BSP89 BSP92 BSP129* BSP135* BSP149* BSP171 BSP295 BSP296 BSS87 BSP315 SOT223 BSS125

    692B

    Abstract: 444L-EVAL COP420L COP444L NSA1166 COP445L NSA1541A 1001R lcd epsom PC108A
    Text: Semiconductor COP444L/COP445L/COP344L/COP345L Single-Chip N-Channel Microcontrollers General Description Features The COP444L, COP445L, COP344L, and COP345L SingleChip N-Channel Microcontrollers are members of the C O P S tm family, fabricated using N-channel, silicon gate


    OCR Scan     		PDF COP444L/COP445L/COP344L/COP345L COP444L, COP445L, COP344L, COP345L COP445L TL/DD/6928-23 COP444L/COP445L/COP344L/COP345L 200pF^ NSA11W0R 692B 444L-EVAL COP420L COP444L NSA1166 NSA1541A 1001R lcd epsom PC108A

    BSP87

    Abstract: bsp296 l BSS125 bss149 to92d
    Text: SIPMOS For complete package outlines, refer to pages PO-1 through PO-6 Low Power MOSFETs Type Characteristics T( =25°C M axim um Ratings N = N Channel P = P Channel V BS107 BS170 BSS88 BSS89 BSS91 BSS92 BSS98 BSS100 BSSlOl BSSUO BSS124 BSS125 BSS129 BSS135


    OCR Scan     		PDF BS107 BS170 BSS88 BSS89 BSS91 BSS92 BSS98 BSS100 BSS124 BSS125 BSP87 bsp296 l bss149 to92d

    2N3822 equivalent

    Abstract: 2N3822
    Text: ' PH IL IP S INTERNATIONAL I l MIE D • ■ “ ~ 711002b a 0 2 b 3 m Jl T ■PHIN 2N3822 T — - z y - z s ' N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR S ym m etrical n-channel, depletion ty p e , silicon ju n ctio n fie ld -e ffe c t transistor, designed p rim a rily fo r


    OCR Scan     		PDF 711002b G2b341 2N3822 T-27-2S- 2N3822 2N3822 equivalent

    Sot23 SL6

    Abstract: BSS315 siemens sot223 BSP296N BSS100 BSS125 BSP129 BSP17 BSP89 BSS129
    Text: SIEMENS AKTIE NGE SELLSCHAF bOE D Ö235b05 0045424 77T « S I E G SIPMOS For complete package outlines, refer to pages PO-1 through PO-6 Low Power MOSFETs Type Maxim um Ratings N = N Channel P = P Channel BSP17 BSP88 BSP89 BSP92 BSP125 BSP129* BSP135* BSP149*


    OCR Scan     		PDF 6535b05 BSP17 OT223 BSP88 BSS88 BSP89 BSS89 BSP92 Sot23 SL6 BSS315 siemens sot223 BSP296N BSS100 BSS125 BSP129 BSS129

    Depletion MOSFET

    Abstract: switching transistor 331 b771D n channel depletion MOSFET N-Channel Depletion-Mode MOSFET BSD12 free transistor gbs transistor convertor 5 V to -5 V Depletion
    Text: 711Gä2t> Q0b770ö 217 • P H I N BSD12 MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon M OS field-effect transistor o f the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.


    OCR Scan     		PDF BSD12 Depletion MOSFET switching transistor 331 b771D n channel depletion MOSFET N-Channel Depletion-Mode MOSFET BSD12 free transistor gbs transistor convertor 5 V to -5 V Depletion

    BF960

    Abstract: transistor BF960 BF-960 transistor BG 20
    Text: 711002b Püb7531 fi3 a H P H IN BF960 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package w ith source and substrate interconnected, intended fo r use in u.h.f. applications in television tuners and professional communication equipment.


    OCR Scan     		PDF DDb7S31 BF960 800MHz BF960 transistor BF960 BF-960 transistor BG 20

    Untitled

    Abstract: No abstract text available
    Text: PMBF4391 PMBF4392 PMBF4393 bbS3^31 0025813 383 « A P X N AMER PHILIPS/DISCRETE b7E D y v . N-CHANNEL FETS Symmetrical silicon n-channel depletion type junction field-effect transistors on a plastic microminiature envelope intended fo r application in thick and thin-film circuits. The transistors are intended fo r low-power


    OCR Scan     		PDF PMBF4391 PMBF4392 PMBF4393 bbS3T31

    2114 ram

    Abstract: RAM 2114 COP420L 692B NSA1166 lcd epsom COP344L COP345L COP400 COP444L
    Text: COP444L/COP445L/COP344L/COP345L Single-Chip N-Channel Microcontrollers G eneral Description Features The COP444L, COP445L, COP344L, and COP345L Single­ Chip N-Channel Microcontrollers are members of the C O P S family, fabricated using N-channei, silicon gate


    OCR Scan     		PDF COP444L/COP445L/COP344L/COP345L COP444L, COP445L, COP344L, COP345L COP445L TL/DD/6928-23 COP444L/COP445L/COP344L/COP345L NSA1166 MM5450 2114 ram RAM 2114 COP420L 692B lcd epsom COP344L COP400 COP444L

    B913

    Abstract: mm5204 COP401L COP402 COP410L N40A bd ips ips bd mm74ls373 b9131
    Text: COP401L National Semiconductor COP401L ROMIess N-Channel Microcontroller General Description Features The CO P401L ROM Iess Microcontroller is a member of the C O P S family of microcontrollers, fabricated using N-channel, silicon gate MOS technology. The CO P401L


    OCR Scan     		PDF COP401L COP410L COP410L. COP402 COP404L divide-by-32 COP410L) B913 mm5204 N40A bd ips ips bd mm74ls373 b9131

    Untitled

    Abstract: No abstract text available
    Text: bbS3=i31 002544=1 =105 * A P X BSD22 b7E D N AMER PHI LIP S/DISCRETE MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the n-channel depletion mode type. The transistor is sealed in a SOT-143 envelope and features a low ON-resistance and low capacitances.


    OCR Scan     		PDF BSD22 OT-143

    B817

    Abstract: cop421l diagram of b817 B817 equivalent COP420L diode SKE 4F "B817" mm74ls373 MM74LS C0P404LSN-5
    Text: COP4Q4LSN-5 National Semiconductor COP404LSN-5 ROMIess N-Channel Microcontrollers General Description Features The COP404LSN-5 ROMIess Microcontroller is a member of the C O P S t m family, fabricated using N-channel, silicon gate MOS technology. The COP404LSN-5 contains CPU,


    OCR Scan     		PDF COP404LSN-5 COP444L COP444L. COP444L, 40-pin TL/DD/6817-13 B817 cop421l diagram of b817 B817 equivalent COP420L diode SKE 4F "B817" mm74ls373 MM74LS C0P404LSN-5

    ultra FAST DMOS FET Switches

    Abstract: SD2100 depletion fet depletion mode fet SST2100 XSD2100 FAST DMOS FET Switches
    Text: N-Channel Depletion Mode Lateral DMOS FET CCIIOQIC CORPORATION \J SD2100/SST2100 FEATURES DESCRIPTION • Fast S w itching. toN 1.0ns ! . crss2 p f The SD2100/SST2100 is a depletion mode DMOS lateral FET


    OCR Scan     		PDF SD2100/SST2100 SD2100/SST2100 OT-143. SD2100 SST2100 OT-143 XSD2100 10OfiA 1A44322 000102b ultra FAST DMOS FET Switches depletion fet depletion mode fet FAST DMOS FET Switches

    2N5460

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 2N5460/D SEMICONDUCTOR TECHNICAL DATA JF E T A m p lifie rs 2N 5460 th ru 2N 5462 P-Channel — Depletion MAXIMUM RATINGS Rating Symbol Value Unit VdG 40 Vdc V g SR 40 Vdc 'G f 10 mAdc Total Device Dissipation @ T /\ = 25°C


    OCR Scan     		PDF 2N5460/D O-226AA) 2N5460

    2N4391

    Abstract: 2n4393 2N4392 2N 4391 NS2N
    Text: 7 1 1 0 0 5 b O D h ö D ? 1* 50b • P H I N 2N4391 to 4393 y v N-CHANNEL FETS Silicon symmetrical n-channel depletion type junction field-effect transistors in TO -18 metal envelopes w ith the gate connected to the case. The transistors are intended for low power, chopper or switching,


    OCR Scan     		PDF 711005b 2N4391 0Gbfl077 2N4392 2N4393 2N 4391 NS2N

    2n3966

    Abstract: transistor 2sk CRS15
    Text: rr PHILIPS INTERNATIONAL MIE D B 711GÛ2b 0GEb3MS A ? B1 P H I N 2N3966 T -3 S -2 5 ' N-CHANNEL SILICON FET Symmetrical n-channel, depletion type, planar epitaxial junction field-effect transistor in a T O -7 2 metal envelope w ith the shield lead connected to the case. The transistor is suitable in a variety o f


    OCR Scan     		PDF 2N3966 -T-3S-25' aTO-72 002b34fl T-35-25 2n3966 transistor 2sk CRS15

    k 373

    Abstract: MRC252 BSD254 BSD254A BSD254AR
    Text: LiLi53cì3 1 Philips Sem iconductors 373 N-channel depletion mode vertical D-MOS transistors APX BSD254; BSD254A; BSD254AR N AflER P H I L I P S / D I S C R E T E FEATURES Product specification b7E D Q UICK REFERENCE DATA • High-speed switching SYMBOL • No secondary breakdown.


    OCR Scan     		PDF BSD254; BSD254A; BSD254AR BSD254 BSD254A k 373 MRC252 BSD254 BSD254A BSD254AR

    MM5314N

    Abstract: 7 segment led 12 Hour Digital Clock Circuit 12 hour digital clock with 7 segment displays and 7-segment led x4 MM5314 equivalent MM5314 MM5314 PIN DIAGRAM 7 segment 24 hr clock circuit TTL 24 hour digital clock dm8863
    Text: rm psryi Digital Clocks MM5309, MM5311, MM5312, MM5313, \ i MM5314 ,ÌMM5315 Digital Clocks General Description These digital clocks are monolithic MOS Integrated circuits utilizing P-channel low-thresltold^nhancement mode and ion implanted, depletion mode devices. The


    OCR Scan     		PDF MM5309, MM5311, MM5312, MM5313, MM5314 /MM5315 2N3904 2N39M AN00E riHS14 MM5314N 7 segment led 12 Hour Digital Clock Circuit 12 hour digital clock with 7 segment displays and 7-segment led x4 MM5314 equivalent MM5314 PIN DIAGRAM 7 segment 24 hr clock circuit TTL 24 hour digital clock dm8863

    t430 transistor

    Abstract: MOS T430 881-1 nec fet chopper P514 T430 66771 TG28 upa34a T030
    Text: NEC j s if / \ - r x b ~ 7 C o m p o u n d T ra n s is to r I / * a ' y s < & J : V r& W } m m & ¿ P A 3 4 A m N-Channel Depletion Twin M O S FET Chopper, Differential Amplifier O2 yuMOS F E T $: |p]— -f- -y 7 °_ h l' S L X ^ P A C K A G E D IM EN SIO N S Unit : mm)


    OCR Scan     		PDF PA34A 40MAX. 002AK( -44551ft) t430 transistor MOS T430 881-1 nec fet chopper P514 T430 66771 TG28 upa34a T030

    BSR56

    Abstract: No abstract text available
    Text: • bbS3T31 D03SS33 311 H A P X N AMER PHILIPS/DISCRETE BSR56 BSR57 BSR58 b7E D y v N-CHANNEL FETS Symmetrical silicon n-channel depletion type ju nctio n field-effect transistors in a plastic m icrom iniature envelope intended fo r application in thick and th in -film circuits. The transistors are intended fo r lowpower, chopper or switching applications in industrial service.


    OCR Scan     		PDF bbS3T31 D03SS33 BSR56 BSR57 BSR58 Drain-R56 BSR56; BSR57; BSR56

    MM53113N

    Abstract: MM53113 Digital Alarm Clock simple block diagram for digital alarm clock with MM5311 "Digital Alarm Clock" fluorescent wiring diagram 12 hour clock schematic digital clock with seconds and alarm time display Presettable Counter with alarm
    Text: » MM53113 •-¿gi National Semiconductor Digital Clocks MM53113 Digital Alarm Clock General Description The MM53113 digital alarm clock is a m onolithi ^M OS integrated circuit utilizing P-channel low-thresRolS, enhancement mode and ion-implanted depletion mode


    OCR Scan     		PDF MM53113 MM53113 24-hour 12-hour MM53113N Digital Alarm Clock simple block diagram for digital alarm clock with MM5311 "Digital Alarm Clock" fluorescent wiring diagram 12 hour clock schematic digital clock with seconds and alarm time display Presettable Counter with alarm