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    P-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V Search Results

    P-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650-12P Murata Manufacturing Co Ltd AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P Visit Murata Manufacturing Co Ltd
    MGN1S1208MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1D120603MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN Visit Murata Manufacturing Co Ltd
    MGN1S1212MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0508MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-8V GAN Visit Murata Manufacturing Co Ltd

    P-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: STP6621 P Channel Enhancement Mode MOSFET -18.0A SCRIPTION STP6621 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original     		STP6621 STP6621 -60V/-10 -60V/-8 PDF

    Untitled

    Abstract: No abstract text available
    Text: STP6623 P Channel Enhancement Mode MOSFET -18.0A SCRIPTION STP6621 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original     		STP6623 STP6621 -60V/-10 -60V/-8 STP6623 PDF

    Untitled

    Abstract: No abstract text available
    Text: STN4438 N Channel Enhancement Mode MOSFET 8.2A DESCRIPTION STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original     		STN4438 STN4438 Code120 PDF

    IRF P CHANNEL MOSFET 200V 20A

    Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
    Text: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω


    Original     		RF1S9630SM RF1S4N100SM RF1S630SM RF1S70N06SM RF1S70N03SM O-263AB) LC96586 IRF P CHANNEL MOSFET 200V 20A P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252 PDF

    500W TRANSISTOR AUDIO AMPLIFIER

    Abstract: IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet
    Text: Power for Computing Analog Discrete Interface & Logic Power Solutions for • Conversion · Distribution · Management · Minimization There’s a lot more to power than power management. Optimizing system power in computing applications requires innovative products for power conversion, distribution,


    Original     		Power247TM, 500W TRANSISTOR AUDIO AMPLIFIER IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet PDF

    complementary MOSFET 2sk

    Abstract: transistor+2sk 2SK series 2SK 20a 600v 2sk 1181 2SK 150A 2SK+series
    Text: SHINDENGEN Power MOSFET HVX-2 series Shindengen Electric Mfg.Co.,Ltd. Tokyo, Japan. 021^307 □□□2330 Tflû SHINDENGEN Power MOSFET Products and Their Applications s. VDSS V Input 60 150 DC12V DC24V 180 200 230 250 350 300 500 600 700 900 DC48V to 72V


    OCR Scan     		DC12V DC24V DC48V AC100V AC200V 0-60V) 2SJ487 2SK2816 2SJ488 2SJ489 complementary MOSFET 2sk transistor+2sk 2SK series 2SK 20a 600v 2sk 1181 2SK 150A 2SK+series PDF

    apm6048

    Abstract: APM6048D P-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V APM6048DU4 apm60 Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A STD-020C Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4 To-252-4
    Text: APM6048DU4 Dual Enhancement Mode MOSFET N-and P-Channel Features • Pin Description D1 D2 N-Channel 60V/8A, RDS(ON)=40mΩ (typ.) @ VGS=10V RDS(ON)=60mΩ (typ.) @ VGS=4.5V • P-Channel -60V/-8A, RDS(ON)=85mΩ (typ.) @ VGS= -10V S1 G1 RDS(ON)=105mΩ (typ.) @ VGS=-4.5V


    Original     		APM6048DU4 -60V/-8A, O-252-4 LO-252 apm6048 APM6048D P-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V APM6048DU4 apm60 Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A STD-020C Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4 To-252-4 PDF

    Untitled

    Abstract: No abstract text available
    Text: • M3D E27 1 0 0 5 3 73 0 7fl4 ■ HAS _ 2N6763 2N6764 H a r r is N-Channel Enhancem ent-Mode Power MOS Field-Effect Transistors A u g u st 1991 Features Package TO -20 4 A E BOTTOM VIEW • 31A and 38A, 60V - 100V • rDS on = 0 .0 8 ÎÎ and 0 .0 5 5 ÎÎ


    OCR Scan     		2N6763 2N6764 2N6763 2N6764 PDF

    B60N06

    Abstract: b60 n06 MTB60N06J3 N06 MOSFET
    Text: CYStech Electronics Corp. Spec. No. : C708J3 Issued Date : 2009.04.29 Revised Date : Page No. : 1/7 N -Channel Enhancement Mode Power MOSFET MTB60N06J3 BVDSS 60V ID 12A RDSON MAX 60mΩ Features • Low Gate Charge • Simple Drive Requirement • RoHS compliant & Halogen-free package


    Original     		C708J3 MTB60N06J3 O-252 UL94V-0 B60N06 b60 n06 MTB60N06J3 N06 MOSFET PDF

    HITACHI 2SJ56 TO-3 AMP 200V 125W MOSFET

    Abstract: 2SJ56 2sk176 mosfet cross reference 2sk135 audio application lateral mosfet audio amplifier BUZ901P 2sJ50 mosfet hitachi mosfet power amplifier audio application BUZ900P BUZ900D
    Text: M A G IMA r^ T E C BUZ 900D BUZ 9 0 1 D NEW PRODUCT SILICON N-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIG H POWER AMPLIFIER APPLICATION FEATURES HIGH SPEED SW ITCHING N - CHANNEL POWER MOSFET SEMEFAB DESIG NED AND DIFFUSED


    OCR Scan     		BUZ905D BUZ906D -100mA -160V -200V HITACHI 2SJ56 TO-3 AMP 200V 125W MOSFET 2SJ56 2sk176 mosfet cross reference 2sk135 audio application lateral mosfet audio amplifier BUZ901P 2sJ50 mosfet hitachi mosfet power amplifier audio application BUZ900P BUZ900D PDF

    fma16n60e

    Abstract: FMA16N60E,16N60E
    Text: DATE DRAWN Mar.-30-'07 CHECKED Mar.-30-'07 CHECKED Mar.-30-'07 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor


    Original     		MS5F6841 FMA16N60E H04-004-05 H04-004-03 fma16n60e FMA16N60E,16N60E PDF

    16n60e

    Abstract: 16N60 TO-220F JEDEC
    Text: DATE CHECKED Mar.-30-'07 CHECKED Mar.-30-'07 NAME DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor


    Original     		FMP16N60E MS5F6840 H04-004-05 H04-004-03 16n60e 16N60 TO-220F JEDEC PDF

    MV16N60E

    Abstract: ic MARKING QG
    Text: DATE DRAWN Feb.-05-'08 CHECKED Feb.-05-'08 CHECKED Feb.-05-'08 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor


    Original     		FMV16N60E MS5F7021 H04-004-05 H04-004-03 MV16N60E ic MARKING QG PDF

    16n60e

    Abstract: 16N60ES
    Text: DATE DRAWN Oct.-10-'08 CHECKED Oct.-10-'08 CHECKED Oct.-10-'08 NAME APPROVED DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor


    Original     		FMH16N60ES MS5F7248 H04-004-05 H04-004-03 16n60e 16N60ES PDF

    Ic C 141

    Abstract: ic MARKING QG
    Text: DATE DRAWN Oct.-06-'08 CHECKED Oct.-06-'08 CHECKED Oct.-06-'08 NAME APPROVED DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor


    Original     		FMV16N60ES MS5F7246 H04-004-05 H04-004-03 Ic C 141 ic MARKING QG PDF

    16n60e

    Abstract: marking code EA SMD MOSFET Method CF st smd diode marking code ex KE 16A DIODE
    Text: Device Name DATE DRAWN Mar.-30-'07 CHECKED Mar.-30-'07 CHECKED Mar.-30-'07 NAME APPROVED : DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used


    Original     		FMI16N60E FMC16N60E FMB16N60E MS5F6842 MS5F68e H04-004-03 16n60e marking code EA SMD MOSFET Method CF st smd diode marking code ex KE 16A DIODE PDF

    TLF35584

    Abstract: TLE9180 77GHz Radar TLE5041 TLE8000 TLE8758 RRN7740 BGT24ATR12 TLE8760 RTN7730
    Text: Driving the Future of Automotive Electronics Automotive Application Guide www.infineon.com/automotive 2 Contents Challenges and Trends 04 Safety Applications 06 Body Applications 22 Powertrain Applications 37 H EV Applications 48 Enhanced Communication 54


    Original     		PDF

    19n60e

    Abstract: HALL 95A 95a hall 19n60e fuji 19n60e fuji to-220 mosfet 600V 9.5A N-CHANNEL FMV19N60E ic MARKING QG IRP10 LTD310
    Text: DATE DRAWN Feb.-05-'08 CHECKED Feb.-05-'08 CHECKED Feb.-05-'08 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor


    Original     		FMV19N60E MS5F7020 H04-004-05 H04-004-03 19n60e HALL 95A 95a hall 19n60e fuji 19n60e fuji to-220 mosfet 600V 9.5A N-CHANNEL FMV19N60E ic MARKING QG IRP10 LTD310 PDF

    HALL 95A

    Abstract: 95a hall 19n60e
    Text: DRAWN Oct.-25-'07 CHECKED Oct.-25-'07 DATE CHECKED Oct.-25-'07 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor


    Original     		October-25-2007 MS5F06941 FMH19N60E H04-004-05 MS5F06941 H04-004-03 HALL 95A 95a hall 19n60e PDF

    fma19n60e

    Abstract: 19n60e HALL 95A
    Text: DATE DRAWN Oct.-25-'07 CHECKED Oct.-25-'07 CHECKED Oct.-25-'07 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor


    Original     		October-25-2007 MS5F06943 FMA19N60E H04-004-05 MS5F06943 H04-004-03 fma19n60e 19n60e HALL 95A PDF

    19n60e

    Abstract: HALL 95A 95a hall 19n60
    Text: DRAWN Oct.-25-'07 CHECKED Oct.-25-'07 DATE CHECKED Oct.-25-'07 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor


    Original     		October-25-2007 MS5F06942 FMR19N60E H04-004-05 MS5F06942 H04-004-03 19n60e HALL 95A 95a hall 19n60 PDF

    16N60G

    Abstract: HER 107 diode HER 103 diode FMW16N60G 16N60
    Text: DATE CHECKED Jun.-01-'05 CHECKED Jun.-01-'05 NAME DWG.NO. Th i s m at er i al and t he i nfo r mat i on her ei n i s t he p r ope r t y of Fuj i El ect r i c C o.,Lt d. They s hal l be nei t her r epr oduced, copi ed, l ent , or d i s cl os e d i n a ny way what s o ev er f or t he us e of any


    Original     		FMW16N60G MS5F6146 H04-004-05 H04-004-03 16N60G HER 107 diode HER 103 diode FMW16N60G 16N60 PDF

    uc3842 unitrode 100 watt

    Abstract: 24v dc power supply with uc3842 UCC2800 application note buck schematic UC3842 note buck converter non isolated UNITRODE applications handbook uc3842 -96 UC3843 in non isolated flyback converter UC3843 application note buck uc3843 12v 5a supply design UC3843 in non isolated boost converter UC3842 application 24V
    Text: UCC1800/1/2/3/4/5 UCC2800/1/2/3/4/5 UCC3800/1/2/3/4/5 Low-Power BiCMOS Current-Mode PWM FEATURES DESCRIPTION • 100mA Typical Starting Supply Current The UCC1800/1/2/3/4/5 family of high-speed, low-power integrated circuits contain all of the control and drive components required for off-line


    Original     		UCC1800/1/2/3/4/5 UCC2800/1/2/3/4/5 UCC3800/1/2/3/4/5 100mA UCC1800/1/2/3/4/5 500mA UC3842 UC3842A/5 U-132. UCC3802 uc3842 unitrode 100 watt 24v dc power supply with uc3842 UCC2800 application note buck schematic UC3842 note buck converter non isolated UNITRODE applications handbook uc3842 -96 UC3843 in non isolated flyback converter UC3843 application note buck uc3843 12v 5a supply design UC3843 in non isolated boost converter UC3842 application 24V PDF

    19n60es

    Abstract: 19n60 FMH1
    Text: DATE DRAWN Sep.-29-'08 CHECKED Sep.-29-'08 CHECKED Sep.-29-'08 NAME APPROVED DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor


    Original     		FMH19N60ES MS5F7206 H04-004-05 H04-004-03 19n60es 19n60 FMH1 PDF