Untitled
Abstract: No abstract text available
Text: STP6621 P Channel Enhancement Mode MOSFET -18.0A SCRIPTION STP6621 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are
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STP6621
STP6621
-60V/-10
-60V/-8
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Untitled
Abstract: No abstract text available
Text: STP6623 P Channel Enhancement Mode MOSFET -18.0A SCRIPTION STP6621 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are
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Original
|
PDF
|
STP6623
STP6621
-60V/-10
-60V/-8
STP6623
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