TPC8403
Abstract: No abstract text available
Text: TPC8403 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type P Channel U-MOSII/N Channel U-MOSII TPC8403 Motor Dreive Notebook PC Portable Machines and Tools Unit: mm • P Channel RDS (ON) = 45 mΩ (typ.) N Channel RDS (ON) = 25 mΩ (typ.) High forward transfer admittance: P Channel |Yfs| = 6.2 S (typ.)
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TPC8403
TPC8403
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TPC8404
Abstract: No abstract text available
Text: TPC8404 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type P Channel π-MOSV/N Channel π-MOSV TPC8404 Motor Dreive Switching Regulator Applications • • Unit: mm Low drain-source ON resistance: P Channel RDS (ON) = 1.85 Ω (typ.) N Channel RDS (ON) = 1.2 Ω (typ.)
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TPC8404
-250V)
TPC8404
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TPC8404
Abstract: No abstract text available
Text: TPC8404 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type P Channel π-MOSV/N Channel π-MOSV TPC8404 Motor Dreive Switching Regulator Applications • • Unit: mm Low drain-source ON resistance: P Channel RDS (ON) = 1.85 Ω (typ.) N Channel RDS (ON) = 1.2 Ω (typ.)
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TPC8404
-100A
-250V)
TPC8404
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Untitled
Abstract: No abstract text available
Text: [ /Title RFF60P 06 /Subject (25A, 60V, 0.030 Ohm, P-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, P-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF60P06 Semiconductor 25A, 60V, 0.030 Ohm, P-Channel Power MOSFET September 1998
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RFF60P06
RFF60P06
MIL-S-19500.
150oC,
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
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TPC8405
Abstract: No abstract text available
Text: TPC8405 TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type P Channel U−MOS IV/N Channel U-MOS III TPC8405 Lithium Ion Secondary Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm z Low drain-source ON resistance : P Channel RDS (ON) = 25 mΩ (typ.)
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TPC8405
TPC8405
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A12 marking
Abstract: A12S MARKING A12 SOT-23 n-channel SOT-89 P-channel A12 s M/TOREX MARKING RULE
Text: XP13/15/16 Series •MARKING RULE ① Represents channel and product group MARK CHANNEL/PRODUCT GROUP ●XP13x Series 1 2 3 4 5 ①②③ N-Channel, Single P-Channel, Single N-Channel, Dual P-Channel, Dual N-Channel, P-Channel, Complementary ②,③ Represents Product number
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XP13/15/16
XP13x
XP131A*
XP132A*
XP133A*
XP134A*
XP135A*
XP15x
OT-23
XP16x
A12 marking
A12S
MARKING A12 SOT-23
n-channel SOT-89
P-channel
A12 s
M/TOREX MARKING RULE
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TPC8405
Abstract: No abstract text available
Text: TPC8405 TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type P Channel U−MOS IV/N Channel U-MOS III TPC8405 Lithium Ion Secondary Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm z Low drain-source ON resistance : P Channel RDS (ON) = 25 mΩ (typ.)
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TPC8405
TPC8405
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sot-363 n-channel mosfet
Abstract: sot-363 p-channel mosfet Dual N-Channel mosfet sot-363 marking code 12 SOT-363 amplifier high current sot-363 p-channel mosfet MARKING 3C5 CMKDM3590 Dual P-Channel mosfet sot-363 SOT-363 marking th CMKDM3575
Text: Central CMKDM3590 N-CH/N-CH CMKDM7590 P-CH/P-CH CMKDM3575 N-CH/P-CH SURFACE MOUNT N-CHANNEL AND P-CHANNEL DUAL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS TM Semiconductor Corp. DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are combinations of dual N-Channel and P-Channel
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CMKDM3590
CMKDM7590
CMKDM3575
OT-363
CMKDM3590:
CMKDM7590:
CMKDM3575:
RATI150
CMKDM7590
sot-363 n-channel mosfet
sot-363 p-channel mosfet
Dual N-Channel mosfet sot-363
marking code 12 SOT-363 amplifier
high current sot-363 p-channel mosfet
MARKING 3C5
Dual P-Channel mosfet sot-363
SOT-363 marking th
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS CJ7252KDW N Channel + P Channel Power MOSFET SOT-363 DESCRIPTION This N Channel + P Channel MOSFET has been designed using advanced power trench process to optimize the RDS ON .
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OT-363
CJ7252KDW
OT-363
2N7002K
CJ502K
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Untitled
Abstract: No abstract text available
Text: 2N5018 P-CHANNEL JFET Linear Systems replaces discontinued Siliconix 2N5018 The 2N5018 is a single P-Channel JFET switch This p-channel analog switch is designed to provide low on-resistance and fast switching. The hermetically sealed TO-18 package is well suited
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2N5018
2N5018
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LS5018
Abstract: No abstract text available
Text: LS5018 P-CHANNEL JFET Linear Systems replaces discontinued Siliconix 2N5018 The LS5018 is a single P-Channel JFET switch This p-channel analog switch is designed to provide low on-resistance and fast switching. The SOT-23 package provides ease of manufacturing,
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LS5018
2N5018
OT-23
500mW
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2n5019
Abstract: No abstract text available
Text: 2N5019 P-CHANNEL JFET Linear Systems replaces discontinued Siliconix 2N5019 The 2N5019 is a single P-Channel JFET switch This p-channel analog switch is designed to provide low on-resistance and fast switching. The hermetically sealed TO-18 package is well suited
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2N5019
2N5019
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Untitled
Abstract: No abstract text available
Text: SST5019 P-CHANNEL JFET Linear Systems replaces discontinued Siliconix SST5019 The SST5019 is a single P-Channel JFET switch This p-channel analog switch is designed to provide low on-resistance and fast switching. The SOT-23 package provides ease of manufacturing,
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SST5019
SST5019
OT-23
500mW
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jfet idss -6ma
Abstract: No abstract text available
Text: SST5018 P-CHANNEL JFET Linear Systems replaces discontinued Siliconix SST5018 The SST5018 is a single P-Channel JFET switch This p-channel analog switch is designed to provide low on-resistance and fast switching. The SOT-23 package provides ease of manufacturing,
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SST5018
SST5018
OT-23
500mW
jfet idss -6ma
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Untitled
Abstract: No abstract text available
Text: 2N5019 P-CHANNEL JFET Linear Systems replaces discontinued Siliconix 2N5019 The 2N5019 is a single P-Channel JFET switch This p-channel analog switch is designed to provide low on-resistance and fast switching. The TO-92 provides a low cost option and ease of
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2N5019
2N5019
500mW
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P-Channel JFET
Abstract: 2n5018
Text: 2N5018 P-CHANNEL JFET Linear Systems replaces discontinued Siliconix 2N5018 The 2N5018 is a single P-Channel JFET switch This p-channel analog switch is designed to provide low on-resistance and fast switching. The TO-92 provides a low cost option and ease of
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2N5018
2N5018
500mW
P-Channel JFET
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Untitled
Abstract: No abstract text available
Text: PN5018 P-CHANNEL JFET Linear Systems replaces discontinued Siliconix PN5018 The PN5018 is a single P-Channel JFET switch This p-channel analog switch is designed to provide low on-resistance and fast switching. The TO-92 provides a low cost option and ease of
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PN5018
PN5018
500mW
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CEDM7001
Abstract: CEDM8001 sot top marking codes
Text: Product Brief CEDM7001 N-Channel CEDM8001 (P-Channel) SOT-883L 20V, 100mA, MOSFETs in the ultra miniature SOT-883L package Top View Bottom View Typical Electrical Characteristics The Central Semiconductor CEDM7001 (N-Channel) and complementary CEDM8001 (P-Channel) are single 20V, 100mA
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CEDM7001
CEDM8001
OT-883L
100mA,
OT-883L
100mA
100mA
CEDM7001
CEDM8001
sot top marking codes
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FET pair n-channel p-channel
Abstract: FET P-Channel Switch logic level complementary MOSFET switch 2n7000 complement logic level complementary MOSFET mosfet discrete totem pole drive CIRCUIT Power MOSFET p-Channel n-channel dual mosfet power P-Channel N-Channel CIRCUIT TP0610 series VN0300L equivalent
Text: AN804 P-Channel MOSFETs, the Best Choice for High-Side Switching Ed Oxner Historically, p-channel FETs were not considered as useful as their n-channel counterparts. The higher resistivity of p-type silicon, resulting from its lower carrier mobility, put it at a disadvantage compared to
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AN804
21-Jun-94
VP0300L
O-226AA
VN0300L
TP0610L
2N7000
FET pair n-channel p-channel
FET P-Channel Switch
logic level complementary MOSFET switch
2n7000 complement
logic level complementary MOSFET
mosfet discrete totem pole drive CIRCUIT
Power MOSFET p-Channel n-channel dual
mosfet power P-Channel N-Channel CIRCUIT
TP0610 series
VN0300L equivalent
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Untitled
Abstract: No abstract text available
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET TrenchFET Gen III - P-Channel Breakthrough P-Channel Technology Dramatically Cuts RDS on KEY BENEFITS • Lowest on-resistance per area achieved for a p-channel MOSFET: down to half of
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SC-75
Si1865DDL
Si7997DP
SiA923AEDJ
SiA929DJ
SC-70
SiA527DJ
SiA537EDJ
VMN-PT0197-1402
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td 1603
Abstract: LS3N164
Text: LS3N164 P-CHANNEL MOSFET The LS3N164 is an enhancement mode P-Channel Mosfet The LS3N164 is an enhancement mode P-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications.
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LS3N164
LS3N164
375mW
td 1603
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Optical Detector
Abstract: EG*G Heimann Optoelectronics GmbH EG*G Optoelectronics Heimann electron Detector 42 1E-18 CHV30P C1300 transistor c900 C900
Text: Lighting Imaging Telecom Sensors Channel Photomultipliers Channel Photomultipliers Overview and Specifications . P H O T O M U L T I P L I E R C P M C H A N N E L Description PerkinElmer Optoelectronics, formerly EG&G Optoelectronics, is pleased to introduce the Channel
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DS-291
Optical Detector
EG*G Heimann Optoelectronics GmbH
EG*G Optoelectronics
Heimann
electron Detector 42
1E-18
CHV30P
C1300
transistor c900
C900
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Untitled
Abstract: No abstract text available
Text: T e m ic Si6963DQ Semiconductors Dual P-Channel 2.5-V G-S Rated MOSFET Product Summary V d s (V) Id (A) ±3.5 ±2.7 rDS(on) (£2) 0.050 @ VGs = -4.5 V 0.085 @ VGs = -2.5 V 20 Si S2 o p 6 6 P-Channel MOSFET P-Channel MOSFET TSSOP-8 Si6963DQ Top View Di D2
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OCR Scan
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Si6963DQ
25Source
S-53246â
26-May-97
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Untitled
Abstract: No abstract text available
Text: Supertexinc. TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET BVpss/BV^ N-Channel P-Channel 200V -200V Order Number/Package ^DS ON ( m 8 X ) N-Channel 7.0 SO-8 P-Channel 12 TC2320TG Features Low Threshold DMOS Technology □ Low threshold □ Low on resistance
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-200V
TC2320TG
TC2320
TC2320TG
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