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    P0* DBM SOT89 Search Results

    P0* DBM SOT89 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    K1305

    Abstract: heating radiators KGF1521 KGF1522 KGF1145 KGF1146 KGF1156 KGF1165 KGF1191 KGF1203
    Text: INTRODUCTION PRODUCT OVERVIEW PRODUCT/ PACKAGE CORRESPONDENCE ELECTRICAL CHARACTERISTICS PACKAGE DIMENSIONS PACKING SPECIFICATIONS HANDLING PRECAUTIONS REFLOW CONDITIONS 1 PRODUCT OVERVIEW 1 ¡ electronic components PRODUCT OVERVIEW E2Q0003-16-60 PRODUCT OVERVIEW


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    E2Q0003-16-60 KGF1145 KGF1146 KGF1155B/1155 KGF1156 KGF1165 KGF1175B/1175 KGF1191 KGF1203 KGF1521 K1305 heating radiators KGF1521 KGF1522 KGF1145 KGF1146 KGF1156 KGF1165 KGF1191 KGF1203 PDF

    XMFP1-M3

    Abstract: D 8243 HC E176 e170315 OF FET E176 FET E119 E176 field effect transistor E176 fet mc34063 step down external transistor 28428
    Text: GaAs GaAs FIELD EFFECT TRANSISTOR GaAs FIELD EFFECT TRANSISTOR Murata Manufacturing Co., Ltd. Cat. No. O35E Contents Small Signal FETs XMFS Series ••••••••••••••••••••••••••••••••••••••••••••••••••••••


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    Rating3-5698410 XMFP1-M3 D 8243 HC E176 e170315 OF FET E176 FET E119 E176 field effect transistor E176 fet mc34063 step down external transistor 28428 PDF

    KGF1312

    Abstract: jan 8168 marking HD SOT89
    Text: This version: Jul. 1998 Previous version: Jan. 1998 E2Q0028-38-72 ¡ electronic components KGF1312 ¡ electronic components KGF1312 Power FET Plastic Package Type GENERAL DESCRIPTION The KGF1312, housed in a SOT-89 type plastic-mold package, is a discrete UHF-band power FET


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    E2Q0028-38-72 KGF1312 KGF1312, OT-89 KGF1312 jan 8168 marking HD SOT89 PDF

    GaAS fet sot89

    Abstract: P0* RF SOT89 pin diagram of 7473
    Text: ODRKGF1312-03 Electronic Components KGF1312 Issue Date:Nov 30, 2003 Driver-FET Plastic Package Type GENERAL DESCRIPTION The KGF1312, housed in a SOT-89 type plastic-mold package, is a discrete UHF-band driver FET that features high output power and high efficiency. The KGF1312 specifications are guaranteed to a fixed matching circuit


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    KGF1312 ODRKGF1312-03 KGF1312, OT-89 KGF1312 850MHz; GaAS fet sot89 P0* RF SOT89 pin diagram of 7473 PDF

    SHF-0589

    Abstract: MCH18
    Text: Preliminary Preliminary Product Description Stanford Microdevices’ SHF-0589 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added


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    SHF-0589 SHF-0589 34dBm 500mA. EDS-101242 MCH18 PDF

    mmic SOT-89 h1

    Abstract: FR4 dielectric constant at 2.4 Ghz SOT-89 LM1 SHF-0189 Stanford Microdevices 4 ghz LL1608-FH6N8K MCH18 FR4 dielectric constant 4.6 H1 SOT-89 S12vs
    Text: Preliminary Preliminary Product Description SHF-0189 Stanford Microdevices’ SHF-0189 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added


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    SHF-0189 SHF-0189 100mA. EDS-101240 mmic SOT-89 h1 FR4 dielectric constant at 2.4 Ghz SOT-89 LM1 Stanford Microdevices 4 ghz LL1608-FH6N8K MCH18 FR4 dielectric constant 4.6 H1 SOT-89 S12vs PDF

    SHF 205

    Abstract: SOT-89 LM1 SHF-0189 Scattering parameter
    Text: Preliminary Preliminary Product Description SHF-0189 Stanford Microdevices’ SHF-0189 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added


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    SHF-0189 100mA. EDS-101240 SHF 205 SOT-89 LM1 SHF-0189 Scattering parameter PDF

    FR4 dielectric constant 4.6

    Abstract: FR4 dielectric constant at 2.4 Ghz H1 SOT-89 fet mmic SOT-89 h1 LL1608-FH6N8K MCH18 SHF-0189 H1 SOT-89 826 5v sot-89 S12VS
    Text: Product Description Stanford Microdevices’ SHF-0189 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added


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    SHF-0189 100mA. EDS-101240 FR4 dielectric constant 4.6 FR4 dielectric constant at 2.4 Ghz H1 SOT-89 fet mmic SOT-89 h1 LL1608-FH6N8K MCH18 H1 SOT-89 826 5v sot-89 S12VS PDF

    FR4 dielectric constant 4.6

    Abstract: CD268 SHF-0289 Stanford SHF-0289 SHF 189 MCH18 822 a b
    Text: Preliminary Preliminary Product Description SHF-0289 Stanford Microdevices’ SHF-0289 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added


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    SHF-0289 SHF-0289 30dBm 250mA. EDS-101241 FR4 dielectric constant 4.6 CD268 Stanford SHF-0289 SHF 189 MCH18 822 a b PDF

    Stanford SHF-0289

    Abstract: SHF-0289 Stanford Microdevices 4 ghz MCH18 SHF 189
    Text: Product Description Stanford Microdevices’ SHF-0289 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added


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    SHF-0289 30dBm 250mA. EDS-101241 Stanford SHF-0289 Stanford Microdevices 4 ghz MCH18 SHF 189 PDF

    K 1358 fet transistor

    Abstract: 28428 A 27631 transistor xmfp1-m3 XMFP3-M3 064110 9-8318 GaAS fet sot89 S0731 65851
    Text: このカタログはNo.O35をムラタのwebサイトよりPDF形式でダウンロードしたものです。 GaAs No.O35.pdf 98.3.18 GaAs FET GaAs FIELD EFFECT TRANSISTOR Cat.No. O35 このカタログはNo.O35をムラタのwebサイトよりPDF形式でダウンロードしたものです。


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    O35webPDF CGRM39 RMCR03 1000pF 4700pF K 1358 fet transistor 28428 A 27631 transistor xmfp1-m3 XMFP3-M3 064110 9-8318 GaAS fet sot89 S0731 65851 PDF

    MMZ20363B

    Abstract: NONLINEAR MODEL LDMOS MMZ25333B MRFE6VP6300 Product Selector Guide
    Text: RF Products Selector Guide freescale.com/RF RF Product Selector Guide Freescale is the global leader in RF transistors for power amplifiers, the most trusted source of RF solutions for more than 30 years. Freescale offers RF solutions for most communication and industrial applications serving wireless


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    ujt 2646

    Abstract: TRANSISTOR J 5804 label infineon barcode msc 1697 MSC 1697 IC pin diagram Rohde und Schwarz Active Antenna HE 011 cd 6283 audio smd transistor v75 log tx2 0909 IC data book free download
    Text: D a t a B o o k , J a n. 20 0 1 GaAs Components N e v e r s t o p t h i n k i n g . Edition 2001-01-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany Infineon Technologies AG 2001. All Rights Reserved. Attention please!


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    D-81541 14-077S Q62702-D1353 Q62702-G172 Q62702-G173 ujt 2646 TRANSISTOR J 5804 label infineon barcode msc 1697 MSC 1697 IC pin diagram Rohde und Schwarz Active Antenna HE 011 cd 6283 audio smd transistor v75 log tx2 0909 IC data book free download PDF

    MICROWAVE ASSOCIATES ISOLATOR

    Abstract: AS218 transistor
    Text: Semiconductor Discretes for RF-Microwave Applications Skyworks Solutions Skyworks Solutions, Inc. is an innovator of high-performance analog and mixed-signal semiconductors enabling mobile connectivity. The company’s power amplifiers, front-end modules and


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    CAT501-09A MICROWAVE ASSOCIATES ISOLATOR AS218 transistor PDF

    MRF8P9040N

    Abstract: rf Amplifier mhz Doherty 470-860 MRF1513NT1 s2p MRF8S21100H MRF8S21100HS MRF8S9220HR3 AN1643 MRF6P23190H MRF8S9170NR3 MW6S004NT1
    Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 35.1 5/2010 RF Product Selector Guide Freescale Semiconductor offers a comprehensive portfolio of RF products, primarily serving the cellular infrastructure, general purpose amplifier, broadcast, aerospace and industrial


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    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor KGF1638_ P la stic G a A s Po w er F E T for G S M and T D M A A p p lica tio n s DESCRIPTION The KGF1638 is a high power, high efficiency GaAs power FET that features high gain at high currents w ith ultra low im pedance drive required for cellular, ISM , PHS and PCS applications. This device is


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    KGF1638_ KGF1638 OT-89 33dBm L72424D KGF1638 b7Z4E40 D02ET01 PDF

    cq 721

    Abstract: ma 17393 KGF1323 P0* DBM SOT89 T4 0660
    Text: O K I electronic components KGF1323 Power FET for UHF-Band and PCS Frequencies Plastic Mold Type G E N E R A L DESCRIPTION The KGF1323, housed in an SOT-89 type plastic-mold package, is a discrete UHF-band power FET that features high efficiency and high output power. The KGF1323 specifications are


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    KGF1323 KGF1323, OT-89 KGF1323 resistance90 7E424G 002E7T7 F1323 cq 721 ma 17393 P0* DBM SOT89 T4 0660 PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor KGF1637_ Plastic GaAs Power FET for FM and FDMA Cellular Applications DESCRIPTION The KGF1637 is a high power, high efficiency GaAs power FET that features high gain at high current w ith ultra low im pedance drive required for cellular, ISM, PH S and PCS applications. This device is


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    KGF1637_ KGF1637 OT-89 b72424D KGF1637 h72424D b72MBM0 PDF

    Untitled

    Abstract: No abstract text available
    Text: This version: Jul. 1998 Previous version: Jan. 1998 E2Q0027-38-72 O K I electronic components KGF1284 Power FET Plastic Package Type GENERAL DESCRIPTION The KGF1284, housed in a SOT-89 type plastic-mold package, is a discrete power FET with frequencies ranging from the UHF-to L-band. This device features high efficiency, high output


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    E2Q0027-38-72 KGF1284 KGF1284, OT-89 KGF1284 than21 PDF

    sn 10 k 0846

    Abstract: type 65.53 KGF1Z83
    Text: E2Q0026-38-72 This version: Jul. 1998 Previous version: Jan. 1998 O K I electronic components_ KGF1283_ Power FET Plastic Package Type GENERAL DESCRIPTION The KGF1283, housed in aSOT-89 typeplastic-mold package, is a discrete UHF-band power FET


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    E2Q0026-38-72 KGF1283_ KGF1283, aSOT-89 KGF1283 KGF1283 sn 10 k 0846 type 65.53 KGF1Z83 PDF

    chw marking sot23

    Abstract: sps 1951 transistor trimmer electron 3296 bw 9028 transistor smd marking BA rn ph 4148 zener diode
    Text: Contents at a Glance VOLUME I Device Index Alphanumeric . . viii Chapter One Selector G u id e . 1.1-1 Chapter Two RF Monolithic Integrated C ircu


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    BFT65

    Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert
    Text: Table of Contents Selection Guide Ordering Codes Inhaltsverzeichnis Typeniibersicht Bestellnummern Scope of Applications Technical Information Quality Specifications Einsatzhinweise Technische Angaben Qualitatsangaben Package Outlines Mounting Instructions


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    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


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    AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720 PDF

    transistors JX 6822 A

    Abstract: MATSUA compressor R12 scf 101 saw filter gte wiring diagram audio amplifier ic 6283 am/transistors JX 6822 A Sansui 21 i fs circuit diagram MC145202 addendum ne602 scrambler motorola power transistor 7752 MC145026
    Text: Contents at a Glance VOLUME I Device Index Alphanumeric . viii Chapter One Selector G u id e .1.1-1


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    MCH12140 MCK12140 2PHX11136Q-21 transistors JX 6822 A MATSUA compressor R12 scf 101 saw filter gte wiring diagram audio amplifier ic 6283 am/transistors JX 6822 A Sansui 21 i fs circuit diagram MC145202 addendum ne602 scrambler motorola power transistor 7752 MC145026 PDF