S12VS Search Results

S12VS Price and Stock

Filter by Manufacturer


Nexperia PTVS12VS1UR-QX PTVS12VS1UR-Q/SOD123W/SOD2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PTVS12VS1UR-QX	Digi-Reel	2,960		1	1 $0.41 10 $0.274 100 $0.41 1000 $0.13 10000 $0.13	Buy Now
	PTVS12VS1UR-QX	Cut Tape	2,960		1	1 $0.41 10 $0.274 100 $0.41 1000 $0.13 10000 $0.13	Buy Now
Avnet Americas	PTVS12VS1UR-QX	Reel			9,000	1 - 10 - 100 - 1000 - 10000 $0.09996	Buy Now
Mouser Electronics	PTVS12VS1UR-QX		4,544			1 $0.41 10 $0.274 100 $0.185 1000 $0.13 10000 $0.087	Buy Now
Newark	PTVS12VS1UR-QX	Cut Tape			5	1 $0.416 10 $0.321 100 $0.193 1000 $0.122 10000 $0.122	Buy Now
TTI	PTVS12VS1UR-QX	Reel			9,000	1 - 10 - 100 - 1000 - 10000 $0.093	Buy Now
Nexperia PTVS12VS1UR,115 TVS DIODE 12VWM 19.9VC SOD123W
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PTVS12VS1UR,115	Cut Tape	2,212		1	1 $0.38 10 $0.251 100 $0.38 1000 $0.116 10000 $0.116	Buy Now
	PTVS12VS1UR,115	Digi-Reel	2,212		1	1 $0.38 10 $0.251 100 $0.38 1000 $0.116 10000 $0.116	Buy Now
	PTVS12VS1UR,115	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.085	Buy Now
Avnet Americas	PTVS12VS1UR,115	Reel			9,000	1 - 10 - 100 - 1000 - 10000 $0.08717	Buy Now
	PTVS12VS1UR,115	Reel		6 Weeks	9,000	1 - 10 - 100 - 1000 - 10000 $0.08717	Buy Now
Mouser Electronics	PTVS12VS1UR,115		85,758			1 $0.38 10 $0.245 100 $0.177 1000 $0.116 10000 $0.083	Buy Now
Newark	PTVS12VS1UR,115	Cut Tape	44,352		5	1 $0.412 10 $0.293 100 $0.204 1000 $0.135 10000 $0.135	Buy Now
Bristol Electronics	PTVS12VS1UR,115		550			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Rochester Electronics	PTVS12VS1UR,115		1,200		1	1 $0.0835 10 $0.0835 100 $0.0785 1000 $0.071 10000 $0.071	Buy Now
TTI	PTVS12VS1UR,115	Reel	6,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.085	Buy Now
TME	PTVS12VS1UR,115		3,670		1	1 $0.349 10 $0.234 100 $0.159 1000 $0.112 10000 $0.112	Buy Now
Avnet Asia	PTVS12VS1UR,115		45,000	6 Weeks	9,000	1 - 10 - 100 - 1000 - 10000 $0.09543	Buy Now
Avnet Silica	PTVS12VS1UR,115		9,000	8 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	PTVS12VS1UR,115			8 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Nexperia PTVS12VS1UTR,115 TVS DIODE 12VWM 19.9VC SOD123W
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PTVS12VS1UTR,115	Digi-Reel	1,682		1	1 $0.41 10 $0.274 100 $0.41 1000 $0.13 10000 $0.13	Buy Now
	PTVS12VS1UTR,115	Cut Tape	1,682		1	1 $0.41 10 $0.274 100 $0.41 1000 $0.13 10000 $0.13	Buy Now
	PTVS12VS1UTR,115	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.107	Buy Now
Avnet Americas	PTVS12VS1UTR,115	Reel		12 Weeks	9,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	PTVS12VS1UTR,115		3,588			1 $0.41 10 $0.274 100 $0.185 1000 $0.13 10000 $0.087	Buy Now
Newark	PTVS12VS1UTR,115	Cut Tape	3,000		5	1 $0.426 10 $0.331 100 $0.198 1000 $0.125 10000 $0.125	Buy Now
TTI	PTVS12VS1UTR,115	Reel			9,000	1 - 10 - 100 - 1000 - 10000 $0.097	Buy Now

Avnet Asia	PTVS12VS1UTR,115			12 Weeks	9,000	1 - 10 - 100 - 1000 - 10000 $0.09211	Buy Now
Avnet Silica	PTVS12VS1UTR,115		9,000	14 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	PTVS12VS1UTR,115			14 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Nexperia PTVS12VS1UR-8X TVS DIODE 12VWM 19.9VC SOD123W
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PTVS12VS1UR-8X	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics LLC PTVS12VS1UR-8X TVS DIODE 12VWM 19.9VC SOD123W
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PTVS12VS1UR-8X	Bulk			4,075	1 - 10 - 100 - 1000 - 10000 $0.07	Buy Now

Find more S12VS price and stock on Findchips.com

S12VS Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
FR4 dielectric constant at 2.4 Ghz Abstract: SHF-0189 S12VS Text: Microstrip Segment Specifications Preliminary Preliminary SHF-0189 DC-3GHz, 0.5 Watt GaAs HFET 900 MHz Application Circuit at 25° C Vds=8V, Idq=100mA Microstrip Segment Specifications Ref. desig. Value Part Number /Style Ref. desig. Value Cd1,8 18 pF RO HM MCH18 series	Original	PDF	SHF-0189 100mA) MCH18 LL1608- FR4 dielectric constant at 2.4 Ghz S12VS
FR4 dielectric constant 4.6 Abstract: CD268 SHF-0289 Stanford SHF-0289 SHF 189 MCH18 822 a b Text: Preliminary Preliminary Product Description SHF-0289 Stanford Microdevices’ SHF-0289 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added	Original	PDF	SHF-0289 SHF-0289 30dBm 250mA. EDS-101241 FR4 dielectric constant 4.6 CD268 Stanford SHF-0289 SHF 189 MCH18 822 a b
SHF-0589 Abstract: MCH18 Text: Preliminary Preliminary Product Description Stanford Microdevices’ SHF-0589 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added	Original	PDF	SHF-0589 SHF-0589 34dBm 500mA. EDS-101242 MCH18
rf 4*4 mm QFN Abstract: APS3628RS34P Text: Not recommended for new designs APS3628 Eight-way Active Power Splitter PRELIMINARY DATA SHEET- Rev 1.2 FEATURES • Single Input, Eight Output Design • Wideband Operation to above 1 GHz • Nominal 4.2 dB Gain • 4 dB Typical Noise Figure • Single +3.3 V Supply	Original	PDF	APS3628 APS3628 rf 4*4 mm QFN APS3628RS34P
Stanford SHF-0289 Abstract: SHF-0289 Stanford Microdevices 4 ghz MCH18 SHF 189 Text: Product Description Stanford Microdevices’ SHF-0289 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added	Original	PDF	SHF-0289 30dBm 250mA. EDS-101241 Stanford SHF-0289 Stanford Microdevices 4 ghz MCH18 SHF 189
mmic SOT-89 h1 Abstract: FR4 dielectric constant at 2.4 Ghz SOT-89 LM1 SHF-0189 Stanford Microdevices 4 ghz LL1608-FH6N8K MCH18 FR4 dielectric constant 4.6 H1 SOT-89 S12vs Text: Preliminary Preliminary Product Description SHF-0189 Stanford Microdevices’ SHF-0189 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added	Original	PDF	SHF-0189 SHF-0189 100mA. EDS-101240 mmic SOT-89 h1 FR4 dielectric constant at 2.4 Ghz SOT-89 LM1 Stanford Microdevices 4 ghz LL1608-FH6N8K MCH18 FR4 dielectric constant 4.6 H1 SOT-89 S12vs
SHF 205 Abstract: SOT-89 LM1 SHF-0189 Scattering parameter Text: Preliminary Preliminary Product Description SHF-0189 Stanford Microdevices’ SHF-0189 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added	Original	PDF	SHF-0189 100mA. EDS-101240 SHF 205 SOT-89 LM1 SHF-0189 Scattering parameter
SHF-0289 Abstract: SHF 189 FR4 dielectric constant vs temperature Text: Preliminary Preliminary Product Description SHF-0289 Stanford Microdevices’ SHF-0289 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added	Original	PDF	SHF-0289 30dBm 250mA. EDS-101241 SHF 189 FR4 dielectric constant vs temperature
FR4 dielectric constant 4.6 Abstract: FR4 dielectric constant at 2.4 Ghz H1 SOT-89 fet mmic SOT-89 h1 LL1608-FH6N8K MCH18 SHF-0189 H1 SOT-89 826 5v sot-89 S12VS Text: Product Description Stanford Microdevices’ SHF-0189 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added	Original	PDF	SHF-0189 100mA. EDS-101240 FR4 dielectric constant 4.6 FR4 dielectric constant at 2.4 Ghz H1 SOT-89 fet mmic SOT-89 h1 LL1608-FH6N8K MCH18 H1 SOT-89 826 5v sot-89 S12VS
CAPACITOR SM Abstract: S11V ID11 CL10B103KBNC LL1608-FS27NJ SGL-0263 S12vs inductor manufact Text: Preliminary Preliminary SGL-0263 1.5 - 2.4 GHz, Cascadable SiGe HBT MMIC Low Noise Amplifier Product Description Sirenza Microdevices SGL-0263 is a high performance SiGe HBT MMIC low noise amplifier featuring 1 micron emitters with FT up to 50 GHz. It is designed for operation at voltages as	Original	PDF	SGL-0263 SGL-0263 EDS-101502 CAPACITOR SM S11V ID11 CL10B103KBNC LL1608-FS27NJ S12vs inductor manufact
Untitled Abstract: No abstract text available Text: Preliminary Preliminary SGL-0263 1.5 - 2.4 GHz, Cascadable SiGe HBT MMIC Low Noise Amplifier Product Description Sirenza Microdevices SGL-0263 is a high performance SiGe HBT MMIC low noise amplifier featuring 1 micron emitters with FT up to 50 GHz. It is designed for operation at voltages as	Original	PDF	SGL-0263 SGL-0263 EDS-101502
MGF4918D Abstract: mgf4914 MGF4914D MGF4910 mitsubishi mgf MGF4917D MGF4916D MGF4917 MGF4910D Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GF4910D Series TA P E C A R R IER S U P E R LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE D R A W IN G The MGF4910D series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic	OCR Scan	PDF	MGF4910D 491OD 12GHz MGF4914D: MGF4916D: MGF4917D: MGF4918D: M5M27C102P MGF4918D mgf4914 MGF4914D MGF4910 mitsubishi mgf MGF4917D MGF4916D MGF4917
tpc8130 Abstract: No abstract text available Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS u P C 8 1 3 0 T A , u P C 8 1 3 1 T A -1 5 dBm INPUT, VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE DESCRIPTION The ,uPC8130TA and ,uPC8131TA are silicon monolithic integrated circuits designed as variable gain amplifier.	OCR Scan	PDF	uPC8130TA uPC8131TA uPC8119T uPC8120T WS60-00-1 C10535E) tpc8130
Untitled Abstract: No abstract text available Text: De \| aiBMb^B □ DO DOS S L Transistor Absolute Maximum Ratings CaseTemperature*25°C -Symbols Features v • Usable to 4 GHz • Rugged Hermetic Package V .c b o . VcEO - V ebo Description . Ic Pt The SCA 0 0 0 5 is a small signal NPN RF-UHF silicon bipolar transistor, With ft—2.2 GHz, the device is	OCR Scan	PDF

MGF4418D Abstract: low noise x band hemt transistor MGF4410D NF510 MGF4416D gm 09 134 755 MGF4417D low noise hemt transistor k 1241 transistor transistor K D 2499 Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> bSM'iôe'i 0 Q 1 7 Û Ô 3 T32 MGF4410D Series SU PER LOW NOISE InGaAs HEMT DESCRIPTION The M G F 4 4 1 0 D OUTLINE DRAWING series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic	OCR Scan	PDF	MGF4410D 12GHz MGF4416D: MGF4417D: MGF4418D: unit071 0017A6b MGF4418D low noise x band hemt transistor NF510 MGF4416D gm 09 134 755 MGF4417D low noise hemt transistor k 1241 transistor transistor K D 2499

Privacy Settings

S12VS Search Results

S12VS Price and Stock

Nexperia PTVS12VS1UR-QX

Nexperia PTVS12VS1UR,115

Nexperia PTVS12VS1UTR,115

Nexperia PTVS12VS1UR-8X

Rochester Electronics LLC PTVS12VS1UR-8X

S12VS Datasheets Context Search

FR4 dielectric constant at 2.4 Ghz

FR4 dielectric constant 4.6

SHF-0589

rf 4*4 mm QFN

Stanford SHF-0289

mmic SOT-89 h1

SHF 205

SHF-0289

FR4 dielectric constant 4.6

CAPACITOR SM

Untitled

MGF4918D

tpc8130

Untitled

MGF4418D