BCX55C
Abstract: BCX51 BCX51-10-AC BCX51-16-AD BCX52 BCX52-10-AG BCX52-16-AM BCX53 BCX54 BCX55
Text: SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS lee,e9 Ccnnl lAnu.nmc n Gii2 COMPLEMENTARY I TYPE - BCX51 - BCX54 BCX52 - BCX55 c BCX53 - BCX56 PARTMARKING BCX51 DETAILS - -AA BCX52 - AE BCX53-I O- AK E \@ c BCX53-I 6- AL BCX52-16-AM BCX51-16-AD - AH BCX53
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BCX51
BCX54
BCX52
BCX55
BCX53
BCX56
BCX51
BCX52
BCX53-I
BCX55C
BCX51-10-AC
BCX51-16-AD
BCX52-10-AG
BCX52-16-AM
BCX54
BCX55
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Untitled
Abstract: No abstract text available
Text: SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET GS -1.0 -10 -8 -6 -0.6 -4 -0.4 ISSUE 3 JANUARY 1996 FEATURES * 60 Volt VDS * RDS on =14Ω D S PARTMARKING DETAIL ML COMPLEMENTARY TYPE ZVN3306F -0.8 D= ZVP3306F G SOT23 ABSOLUTE MAXIMUM RATINGS.
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ZVN3306F
ZVP3306F
-100mA
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ZVN4210
Abstract: resh S10A fet ZVN4210G DSA003737
Text: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4210G ISSUE 2 - NOVEMBER 1995 FEATURES * Low RDS on = 1.5Ω PARTMARKING DETAIL - ZVN4210 VGS= 10V 9V 8V 7V ID - Drain Current (Amps) 5 4 3 6V 5V 2 4V 3.5V 3V 2.5V 2V 10 1 1 2 3 4 5 6 7 8 9 VDS - Drain Source Voltage (Volts)
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OT223
ZVN4210G
ZVN4210
DD25V,
ZVN4210
resh
S10A fet
ZVN4210G
DSA003737
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AVALANCHE TRANSISTOR
Abstract: FMMT413 SOT23 NPN LED driver 110V laser led DSA003671 avalanche mode transistor
Text: FMMT413 ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL Emitter Inductance Le Transition Frequency Collector-Base Capacitance MIN. TYP. MAX. UNIT CONDITIONS. 2.5 nH Standard SOT23 leads fT 150 MHz IC=10mA, VCE=5V f=20MHz Ccb 2 pF VCB=10V, IE=0 f=1MHz . SOT23 NPN SILICON PLANAR
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FMMT413
20MHz
FMMT413
AVALANCHE TRANSISTOR
SOT23 NPN
LED driver 110V
laser led
DSA003671
avalanche mode transistor
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10VZ/X/
Abstract: No abstract text available
Text: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4424G ISSUE 4 - OCTOBER 1995 FEATURES * 240 Volt BVDS * Extremely low RDS on =4.3Ω * Low threshold and Fast switching APPLICATIONS * Earth recall and dialling switches * Electronic hook switches * Battery powered equipment
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OT223
ZVN4424G
ZVN4424
ZVP4424G
400mA
10VZ/X/
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P-Channel FET 100v
Abstract: PARTMARKING mr ZVP3310 zvp3310f ZVN3310F DSA0037411 zvp331
Text: ZVP3310F TYPICAL CHARACTERISTICS VGS= -20V -16V -14V -12V -10V -9V -8V -7V -6V -0.2 -5V -4V -6 Drain Source -0.4 -8 -4 ID= -0.3A -2 -0.15A -0.075A -2 -4 -6 -8 -10 V I - Drain Current Amps -0.6 -10 -6 -8 -10 Voltage Saturation Characteristics Saturation Characteristics
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ZVP3310F
ZVN3310F
-150mA
P-Channel FET 100v
PARTMARKING mr
ZVP3310
zvp3310f
ZVN3310F
DSA0037411
zvp331
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FET SOT23 60V
Abstract: ML SOT23 ZVP3306F ZVN3306F DSA0037409
Text: ZVP3306F TYPICAL CHARACTERISTICS -4 -2 -200mA -100mA V Drain Source -6 -2 -4 -6 -8 I - Drain Current Amps ID= -400mA -8 -0.8 -12V -0.6 f=1MHz Ciss 20 Coss 10 Crss 5 / V -10 -20 -30 -40 -50 -60 1 -8 -10 Note:ID=- 0.2A VDS= -20V-40V -60V -4 -6 -8 -10 -12 -14
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ZVP3306F
-200mA
-100mA
-400mA
ZVN3306F
FET SOT23 60V
ML SOT23
ZVP3306F
ZVN3306F
DSA0037409
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Untitled
Abstract: No abstract text available
Text: FMMT415 FMMT417 TYPICAL CHARACTERISTICS 180 160 80 30 100 3. 20 40 20 40 60 80 100 120 140 160 180 -60 -40 -20 0 Maximum Avalanche Current v Pulse Width IUSB v Temperature for the specified conditions 100 220 80 200 V+- =10V - V 175°C 60 Risetime of Base
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FMMT415
FMMT417
100mA
200mA
20MHz
100MHz
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BAY63
Abstract: BCX71JR J8 BCX71JR sot23 mark ck BCX71JR-J8 h11E BCX71 BCX71G BCX71H BCX71HR
Text: SOT23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTORS BCX71 ISSUE 2 FEBRUARY 95 PARTMARKING DETAIL BCX71G BG BCX71H BH BCX71J BJ BCX71K BK BCX71GR CG BCX71HR 6P BCX71JR J8 BCX71KR CK ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated .
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BCX71
BCX71G
BCX71H
BCX71J
BCX71K
BCX71GR
BCX71HR
BCX71JR
BCX71KR
BAY63
BCX71JR
J8 BCX71JR
sot23 mark ck
BCX71JR-J8
h11E
BCX71
BCX71G
BCX71H
BCX71HR
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ZVP2110
Abstract: ZVN2110G ZVN211 ZVP2110G sot223 p-channel DSA0037405
Text: SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2110G TYPICAL CHARACTERISTICS VGS= -20V -16V -1.6 - Drain Current Amps g -Transconductance (mS) 250 200 VDS=-10V 150 100 50 BI -1.4 -12V -10V -9V -8V -1.2 -1.0 -0.8 -6V -0.4 -5V -4.5V -4V -3.5V I -2
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OT223
ZVP2110G
ZVN2110G
ZVP2110
-375mA
ZVP2110
ZVN2110G
ZVN211
ZVP2110G
sot223 p-channel
DSA0037405
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h12e
Abstract: BCW60DR CR SOT23 power 22E mark B1 sot23 BCW60 BCW60A BCW60AR BCW60B BCW60BR
Text: SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS BCW60 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . Collector-Emitter Breakdown Voltage V(BR)CEO Emitter-Base Breakdown Voltage V(BR)EBO Collector-Emitter Cut-off Current ICES 20 20
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BCW60
BCW60AR
BCW60BR
BCW60CR
BCW60DR
150oC
200Hz
h12e
BCW60DR
CR SOT23
power 22E
mark B1 sot23
BCW60
BCW60A
BCW60AR
BCW60B
BCW60BR
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fmmt417
Abstract: FMMT415 transistor 200V 100MA NPN npn 100n 1a AVALANCHE TRANSISTOR DSA003693 620PF
Text: FMMT415 FMMT417 TYPICAL CHARACTERISTICS 180 160 80 30 100 3. 20 40 20 40 60 80 100 120 140 160 180 -60 -40 -20 0 Maximum Avalanche Current v Pulse Width IUSB v Temperature for the specified conditions 100 220 80 200 V+- =10V - V 175°C 60 Risetime of Base
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FMMT415
FMMT417
100mA
200mA
20MHz
fmmt417
FMMT415
transistor 200V 100MA NPN
npn 100n 1a
AVALANCHE TRANSISTOR
DSA003693
620PF
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ZVN2106
Abstract: ZVN2106 equivalent zvn2106 sot223 ZVP2106G ZVN2106G DSA003735
Text: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN2106G ISSUE 3 – NOVEMBER 1995 FEATURES * 60 Volt VDS * RDS on =2Ω VGS= 10V 9V 3 8V 7V 2 6V 5V 1 4V 3V 1 2 3 4 VDD= 20V 30V 50V 16 VGS-Gate Source Voltage (Volts) ID(On) -On-State Drain Current (Amps)
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OT223
ZVN2106G
ZVP2106G
ZVN2106
ZVN2106
ZVN2106 equivalent
zvn2106 sot223
ZVP2106G
ZVN2106G
DSA003735
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BCW61DR
Abstract: BCW61CR BCW61BR H12E BCW61AR K3024 BCW60 h22e BCW61A BCW61B
Text: SOT23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTORS BCW61 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . V(BR)CEO Emitter-Base Breakdown Voltage V(BR)EBO Collector-Emitter Cut-off Current ICES -20 -20 µA nA VCES =-32V VCES =-32V ,Tamb=150oC
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BCW61
BCW60
150oC
-10mA
-50mA,
BCW61DR
BCW61CR
BCW61BR
H12E
BCW61AR
K3024
BCW60
h22e
BCW61A
BCW61B
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ZVP2106
Abstract: ZVP2106G ZVN2106G DSA0037403
Text: ZVP2106G -2.5 -12V -2.0 -10V -1.5 -9V -8V -1.0 -7V -6V -0.5 -5V -4V -10 -20 -30 -40 -50 ID On -On-State Drain Current (Amps) ID(On) -On-State Drain Current (Amps) VGS= -20V -18V -14V -3.0 -2.0 -1.8 VGS= -10V -1.6 -1.4 -1.2 -9V -1.0 -8V -0.8 -7V -0.6 -6V -0.4
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ZVP2106G
ZVP2106
ZVP2106G
ZVN2106G
DSA0037403
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33a sot223
Abstract: ZVN4310 ZVN4310G DSA0037383
Text: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4310G ISSUE 3 - FEBRUARY 1996 FEATURES * Very low RDS ON = .54Ω APPLICATIONS * DC - DC Converters * Solenoids/Relay Drivers for Automotive ID - Drain Current (Amps) 10 9 RDS(on)-Drain Source On Resistance (Ω)
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OT223
ZVN4310G
8V10V
ZVN4310
33a sot223
ZVN4310
ZVN4310G
DSA0037383
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ZVN4424G
Abstract: ZVN4424 ZVP4424G DSA0037385 10VZ/X/
Text: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4424G ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BVDSS 240 Gate-Source Threshold Voltage VGS(th) 0.8 Gate-Body Leakage IGSS
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OT223
ZVN4424G
400mA
ZVN4424G
ZVN4424
ZVP4424G
DSA0037385
10VZ/X/
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power 22E
Abstract: BCX70GR TRANSISTOR AH BCX70 BCX70G BCX70H BCX70HR BCX70J BCX70JR BCX70K
Text: SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR BCX70 BCX70 ISSUE 2 FEBRUARY 95 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL MIN. TYP. Collector-Emitter Breakdown Voltage V(BR)CEO 45 5 Emitter-Base Breakdown Voltage
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BCX70
BCX70G
150oC
200Hz
power 22E
BCX70GR
TRANSISTOR AH
BCX70
BCX70G
BCX70H
BCX70HR
BCX70J
BCX70JR
BCX70K
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zvn4206
Abstract: zvn4206 application FAST DMOS FET Switches n-CHANNEL ZVN4206G DSA003784
Text: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4206G ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BV DSS 60 Gate-Source Threshold Voltage VGS(th) 1.3 Gate-Body Leakage MAX.
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OT223
ZVN4206G
zvn4206
zvn4206 application
FAST DMOS FET Switches n-CHANNEL
ZVN4206G
DSA003784
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Untitled
Abstract: No abstract text available
Text: BSS66 BSS67 SOT23 NPN SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS PARTMARKING DETAILS BSS66 - M6 BSS67 - M7 BSS66R- M8 BSS67R - M9 ABSOLUTE MAXIMUM RATINGS VALUE UNIT V CBO 60 V V CEO 40 V V ebo !cm 6 V 200 mA Continuous Collector Current !c 100 mA Base Current
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BSS66
BSS67
BSS66
BSS67
BSS66R-
BSS67R
7D57fl
DS110
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Untitled
Abstract: No abstract text available
Text: BSS82B BSS82C SOT23 PIMP SILICON PLANAR SWITCHING TRANSISTORS PARTMARKING DETAILS BSS82B - CL BSS82C - CM ABSOLUTE MAXIMUM RATINGS C o llec to r-E m itte r V o lta g e E m itter-B ase V o ltag e VALUE U N IT V CBO -6 0 V V CE0 -6 0 V V EBO -5 V -8 0 0 mA 330
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BSS82B
BSS82C
BSS82B
BSS82C
SS82B
300/iS.
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Untitled
Abstract: No abstract text available
Text: BSS80B BSS80C SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS PARTMARKING DETAILS BSS80B - CH BSS80C - CJ ABSOLUTE M A X IM U M RATINGS P A R A M E TE R SYMBOL C ollector-B ase V o lta g e V CBO -6 0 V C o llec to r-E m itte r V o ltag e V CEO -4 0 V E m itter-B ase V o ltag e
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BSS80B
BSS80C
BSS80B
BSS80C
300jiS.
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BCW61BR
Abstract: BCW61DR BCW61CR BCW61 BCW61A BCW61AR BCW61B BCW61C BCW61D S0T23
Text: S0T23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTORS BCW61 PARTMARKING DETAILS:BCW61A - BA BCW61AR - CA BCW61B - BB BCW61BR - CB BCW61C - BC BCW61CR - CC BCW61D - BD BCW61DR - CD ABSOLUTE MAXIMUM RATINGS PARAMETER SYM BOL C ollector-B ase V oltag e C o lle c to r-E m itte r V oltag e
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S0T23
-BCW61A
BCW61B
BCW61C
BCW61D
BCW61AR
BCW61BR
BCW61CR
BCW61DR
BCW61
BCW61
BCW61A
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opti 85c
Abstract: No abstract text available
Text: HIGH-SPEED 3 2 K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM ADVANCED IDT70927S/L FEATURES: • True Dual-Ported memory cells which allow simultaneous reads of the same memory location • High-speed access — Commercial: 25/35/55ns max. • Low-power operation
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IDT70927S/L
25/35/55ns
IDT70927S
950mW
IDT70927L
I/015R
1/011R
I/06R
I/04R
opti 85c
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