Untitled
Abstract: No abstract text available
Text: Ordering number : EN5300A N-Channel Silicon MOSFET 2SK2316 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. • Ultrahigh-speed switching. unit: mm 2062A-PCP • Low-voltage drive 2.5V drive . [2SK2316] 1 : Gate 2 : Drain
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EN5300A
2SK2316
062A-PCP
2SK2316]
250mm2Ã
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN*A2303 PCP1402 Advance Information http://onsemi.com N-Channel Power MOSFET 250V, 1.2A, 2.4Ω, Single PCP Features • On-resistance RDS on =1.8Ω(typ.) • Input Capacitance Ciss=210pF(typ.) • Halogen free compliance Specifications
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A2303
PCP1402
210pF
600mm2Ã
A2303-5/5
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2062a
Abstract: 2SK2316
Text: Ordering number : EN5300A N-Channel Silicon MOSFET 2SK2316 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. • Ultrahigh-speed switching. • Low-voltage drive 2.5V drive . unit: mm 2062A-PCP [2SK2316] 1 : Gate 2 : Drain
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EN5300A
2SK2316
062A-PCP
2SK2316]
250mm2
2062a
2SK2316
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN*A2326 PCP1405 Advance Information http://onsemi.com N-Channel Power MOSFET 250V, 0.6A, 6.5Ω, Single PCP Features • On-resistance RDS on 1=5Ω(typ.) • 2.5V drive • Protection diode in • Halogen free compliance Specifications
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A2326
PCP1405
A2326-5/5
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PCP1403-TD-H
Abstract: No abstract text available
Text: Ordering number : ENA2294A PCP1403 N-Channel Power MOSFET 60V, 4.5A, 117mΩ, Single PCP http://onsemi.com Features • On-resistance RDS on 1=92mΩ(typ.) • 4V drive • Protection Diode in • Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25°C
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ENA2294A
PCP1403
600mm2Ã
A2294-5/5
PCP1403-TD-H
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN*A2294 PCP1403 Advance Information http://onsemi.com N-Channel Power MOSFET 60V, 4.5A, 117mΩ, Single PCP Features • On-resistance RDS on 1=92mΩ(typ.) • 4V drive • Protection Diode in • Halogen free compliance Specifications
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A2294
PCP1403
600mm2Ã
A2294-5/5
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA2227 PCP1302 P-Channel Power MOSFET −60V, −3A, 266mΩ, Single PCP http://onsemi.com Features • On-resistance RDS on 1=200mΩ(typ.) • 4V drive • Halogen free compliance • Protection Diode in Specifications Absolute Maximum Ratings at Ta = 25°C
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ENA2227
PCP1302
600mm2Ã
A2227-5/5
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA2303A PCP1402 Power MOSFET 250V, 2.4Ω, 1.2A, Single N-Channel http://onsemi.com Features • On-resistance RDS on =1.8Ω (typ) Input Capacitance Ciss=210pF (typ) Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25C
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ENA2303A
PCP1402
210pF
600mm2ï
A2303-5/5
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2SK2153
Abstract: 2SJ332S
Text: • Device Lineup ♦ 2.5V-Drive Power MOSFETs Absolute maximum ratings Ta = 25DC Type No, Package 2SJ381 PCP 2SJ382 TP-FA 2SJ383 2SJ419 2SK2317 2SK2318 FW201 ±10 2 ±12 r r rD (W) lytsi typ Ciss typ (S) (pF) 3.5 400/700 280/400 2.4 170 240/380 155/220 ^
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2SJ381
2SJ382
2SJ383
2SJ419
2SJ42Q
2SK2316
2SK2317
2SK2318
2SK2440
2SK2441
2SK2153
2SJ332S
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2SJ437
Abstract: 2SK244
Text: il ucakon Examples lUsing a Schotfky Barner diode AC a d a p te r Using a power MOSFET) ; •>- - ■►! — ■-* A C a d a p te r o u tp u t o - o u tp u t Battery Battery ■ Device Lineup ♦ Schottky Barrier Diodes Package SB20W03P PCP SB40W03T TP-FA
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SB20W03P
SB40W03T
SBA100-04ZP
SBA160-Q4ZP
SBA50-04Y
SBA10Q-04Y
SBA160-04Y
characteristicsSJ466
2SJ437
2SJ257
2SK244
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e1220
Abstract: 2SK2437
Text: SAfiYO New Products Of New Package 5/6-pi n XP Seri es :FX type 1 The Sanyo new package 5/6-pin XPs are intermediate sized devices between Sanyo PCP and TP packages and have high power capability. This package line includes large current switching transistor series, power MOS FET series, and other device series.
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MT950206TR
e1220
2SK2437
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Untitled
Abstract: No abstract text available
Text: SAfjYO New Products Of New Package 5/6-pi n XP Ser ies :FX type 2 SANYO new 5/6-pin XP packages are intermediate sized devices between SANYO PCP and TP packages and have high power capability. This packages line includes complex types of large-current switching transistors, of a low saturation-voltage transistor (fast
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B1302
SB20W03P
D1628
FX90KTR
i11er
MT970331TR
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SB002-15SPA
Abstract: SB005-09CP SB005-09SPA SB01-15NP SB02-09CP SB02-09NP SB02-15 SB05-09 SB10-09T S0T143
Text: SAfiYO Small-Signal High-Voltage Schottky Barri er Diodes 2 S i n g l e T y p e S{: Mounted on ceramic board (250mm' X 0.8mm) ☆: Mounted on Cu foil (16mm‘X 0.2mmt) on glass epoxy board 0:Refer to the individual catalogue of each product because the center part of PCP outline is completely
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250mm'
T0-126
SB005-09CP
SB02-09CP
SB10-09PCSJ
T0-126LP
T0-220CI
T0-220ML
SC-67,
OT-186)
SB002-15SPA
SB005-09SPA
SB01-15NP
SB02-09NP
SB02-15
SB05-09
SB10-09T
S0T143
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2SB1205
Abstract: FX851
Text: SANYO New Products Of New Package 5/6-pi n XP Seri es :FX type 2 SANYO new 5 /6 -p in XP packages a re in te rm ed ia te sized d e vices between SANYO PCP and TP packages and have high power cap a b ility . This packages lin e in clu d e s complex types of la rg e -c u rre n t sw itchin g t r a n s i s to r s , of a low s a tu ra tio n -v o lta g e t r a n s i s to r ( f a s t
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B1121
SB30-03P
B1302
SB20W03P
D1628
0W03P
50202TR
2SB1205
FX851
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K1412
Abstract: K1413 K1464 K923A 2sk1412 to220ml AK1052 AK924 2SJ193 2SK1460
Text: PE5L 89-10 SANYO SEMICONDUCTOR CORP 32E D 7 ci c17G7ti □Q0ci 2 ci l a T '3 ? '0 / ííS^V:í¿^^^i¿^<#rA‘ííf'A,íí'í»ltlKi-niS .040450’ vJ|tV Sanyo Power MOSFETs SANYO Electric Co.,Ltd. Semiconductor Division MKM Series 8 0 0 4 -9 2 9 9 SENICOiiilUCTOR CORP
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17G7ti
2SK1467
2SK14691
2SK1470
--2SK1471
2SK1472
2SK1473
2SK1474
2SK1475
1800m
K1412
K1413
K1464
K923A
2sk1412 to220ml
AK1052
AK924
2SJ193
2SK1460
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mosfet k 2038
Abstract: TO-40-040 PCP MOSFET 2sd1851 TRANSISTOR transistor 2SA transistor 2 sa 72 2SB1205 2SC5155
Text: Produci Selection Guide by Function High-Voltage Applications Absolute maximum ratings Package Electrical characteristics T a = 2 5 t ICBO max @ VCB Type No. Page Type Drawing num ber VCBO (V ) VCEO (V ) vebo (V ) 1C (m A ) PC (m W ) A ICBOmax ( * A) VCB
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2SK2170
2SK1068
2SK1069
2SK1332
2SK2219
2SK303
2SK545
2SK771
mosfet k 2038
TO-40-040
PCP MOSFET
2sd1851 TRANSISTOR
transistor 2SA transistor 2 sa 72
2SB1205
2SC5155
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2SK2747
Abstract: 2SK2748 2SJ403 2SK536 2SK1467 2SJ254 2SJ255 2SJ256 2SJ263 2SJ264
Text: Continued from previous page Absolute maximum ratings Type No. Package type Applications Electrical characteristics Ta » 251C RDS(on)@ID ' VGS W Voss (V) ID (A) PD (W) Teh 0« V 6^*> RDS(on) max(Q) to |Yf»| VDS • M> (A) Vgs (V) VDS 00 to (A) 2SJ282
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Ta-25t)
2SJ282
T0220
2SJ348
2SJ478V
2SJ254
T0220ML
2SJ255
2SK2747
2SK2748
2SJ403
2SK536
2SK1467
2SJ256
2SJ263
2SJ264
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2sc3153
Abstract: 2SJ335 transistor 2sc4460 2SC4427 2sc4460 2SC3151 2SC3152 2SC3277 2SC3448 2SC3449
Text: Continued from previous page Absolute maximum ratings Type No. Package type Applications Electrical characteristics Ta « 25 ~C hre@VCE • 1C VCBO (V) VCEO (V) V ebo (V) (A) (W ) A 1C PC fr@ VC E ■ IC tf(toff) max U s) (A) fr (MHz) 2SC3151 T03PB Switching requlator
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2SC3151
T03PB
10to40
2SC3152
2SC3I53
2SC3277
2sc3153
2SJ335
transistor 2sc4460
2SC4427
2sc4460
2SC3448
2SC3449
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Untitled
Abstract: No abstract text available
Text: • Devices Related to Batteries and DC/DC Converters Low-saturation Transistors Absolute maximum ratings Ta = 25°C Type No. Package 2SB1295 CP VCbo V CEO (V) (V) 15 v CE(sat) Pc (W) (A) 15 Electrical characteristics (Ta = 25°C) 0.8 0.2 VCE (V) •c (A)
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2SB1295
2SB1122
2SD1622
250mm2
SB007-03Q
SB007W
SB007T03Q
FC806
SB007-03Q
SB007W03Q
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k669 transistor
Abstract: k544 K932 transistor mosfet k544 k427 transistor k583 k427 K932 k222 mosfet k546
Text: SAfÊYO Small-signal Junction FETs/MOSFETs F e a tu re s Case O u tlin e s unit.'m m SANYO:SMCP 1 : S ource, 2 : Drá i n, 3 : Ga te * V e r y low n o is e f ig u r e * L arge |Y f s | * Low g a te le a k c u r r e n t * S m a ll-s iz e d package p e r m ittin g FET-used s e t s to be made s m a lle r
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250mm
Ratings/Ta-25
2SK2170UA)
2SK1069
2SK1332CV)
2SK209KH)
2SK2219CD)
T0-126LP
T0-220CI
T0-220ML
k669 transistor
k544
K932 transistor
mosfet k544
k427 transistor
k583
k427
K932
k222 mosfet
k546
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3SK190
Abstract: SGF19 2SC2814-2 2sk543 cross 2sc2078 2SK715
Text: High Frequency Transistors Electrical characteristics Ta = 25 deg. C Absolute maximum ratings Device Package type Application lcao max @ Vcb VcBQ VCEO Vebo (V) (V) (V) , te (mA) Pc (mW) J o Icbo max m hFE @ Vce • Ic Vcb (V) h rc f i @ Vce • lc Vce Ip
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2SK1645*
2SK1646*
SGF104
SGF11v
SGF15*
3SK190
SGF19
2SC2814-2
2sk543 cross
2sc2078
2SK715
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Untitled
Abstract: No abstract text available
Text: • Overview Currently, battery-operated portable equipment sucn as notebook computers, portable telephones, video cameras n office a ./'j :v -■ equipment and AV equipment are becoming increasingly common. Accordingly, many devices are required witn low-voltage C" ve:- ar 3
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2SJ381
FX207
2SJ382
2SJ383
2SJ419
2SJ420
FW101
2SK2316
FX208
2SK2317
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mosfet HF amplifier
Abstract: 3SK266 2sk2073 2SK931 2SA1688 2SA1857 2SA1863 2SC4399 2SC4400 2SC4432
Text: TRANSISTORS H ig h -F re q u en cy T ra n s is to rs Absolut« maximum ratings Device Package AppHeaiiens ir* mA VCBO ; » geo r X a o <VJ ! (V) I (V) PC (mW) Electrical characteristics (T, = 25 °C) I I leso max @ Vcb Ti I 2SA1863* SMCP HF amplifier 15
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2SA1863Â
2SC4918*
2SA1857
2SC4400
2SC4399
2SA1688
FC119
2SC2814
2SC4504
2SA1724
mosfet HF amplifier
3SK266
2sk2073
2SK931
2SA1863
2SC4432
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svc253
Abstract: MARKING 1ED 5176 to-220 PCP MOSFET MCP6 Marking sanyo
Text: VARIABLE-CAPACITANCE DIODES IOCAP SA0YO Low-volt age and high-voltage variable capacitance diodes are available for both of AM electronic tuning use and FM electronic tuning use. gg F e a t u r e s ♦ High capacitance ratio ♦ Good linearity ♦ Small-sized package
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SVC321SPA
SVC323
SVC325
SVC34KVA)
SVC342
SVC343
SVC344
SVC345
SVC346
SVC347CVI)
svc253
MARKING 1ED
5176 to-220
PCP MOSFET
MCP6 Marking sanyo
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