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Monolithic Power Systems MEZDPD4506A-8534 DC DC CONVERTER 0.6-22V
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Monolithic Power Systems MEZDPD4506A-853A DC DC CONVERTER 0.6-22V
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Monolithic Power Systems MEZDPD4506A-8538 DC DC CONVERTER 0.6-22V
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DigiKey	MEZDPD4506A-8538	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Monolithic Power Systems MEZDPD4506A-853E DC DC CONVERTER 0.6-22V
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DigiKey	MEZDPD4506A-853E	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Monolithic Power Systems MEZDPD4506A-8539 DC DC CONVERTER 0.6-22V
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DigiKey	MEZDPD4506A-8539	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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PD450 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
PD450		Micro-Precision Technologies	Microwave Pin Diode Drivers		Scan	PDF

PD450 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
UPD4502161 Abstract: upd4502161g5a12 UPD4502161G5A12-7JF PD4502161 BD3/1/TX13/7.9/PP10/UPD4516421G5-A12-7JF Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD4502161 2M-bit Synchronous DRAM Description The µPD4502161 is a high-speed 2,097,152-bit synchronous dynamic random-access memory, organized as 65,536 x 16 × 2 word × bit × bank , respectively. The synchronous DRAM achieves high-speed data transfer using the pipeline architecture.	Original	PDF	PD4502161 PD4502161 152-bit 50-pin UPD4502161 upd4502161g5a12 UPD4502161G5A12-7JF BD3/1/TX13/7.9/PP10/UPD4516421G5-A12-7JF
KSS-210A Abstract: KSS210A sanyo SF90 SH1106 SOAD70A KSS150A PEA1030 KSS210B SOALP1200 cdm12.1 Text: Manufacturer Model Pickup AIWA CAB500 KSS150A AIWA CADW500 KSS150A AIWA CNX400 KSS210A AIWA CSDEX1 KSM2101BA AIWA CSDEX1 KSS210B AIWA CSDEX210 KSM2101BA AIWA CSDEX210 KSS210B AIWA CSDEX310 KSM2101BA AIWA CSDEX310 KSS210B AIWA CVDZ93W KSS150A AIWA CX810Z KSS210A	Original	PDF	CAB500 CADW500 CNX400 CSDEX210 CSDEX310 CVDZ93W CX810Z CXL60 KSS-210A KSS210A sanyo SF90 SH1106 SOAD70A KSS150A PEA1030 KSS210B SOALP1200 cdm12.1
uPD4504161 Abstract: upd4504161g5 Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4504161 4M-bit Synchronous DRAM Description The µPD4504161 is a high-speed 4,194,304-bit synchronous dynamic random-access memory, organized as 131,072 x 16 × 2 word × bit × bank , respectively. The synchronous DRAM achieves high-speed data transfer using the pipeline architecture.	Original	PDF	PD4504161 PD4504161 304-bit 50-pin uPD4504161 upd4504161g5
UPD4504161 Abstract: PD4504161 upd4504161g5 Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4504161 4M-bit Synchronous DRAM Description The µPD4504161 is a high-speed 4,194,304-bit synchronous dynamic random-access memory, organized as 131,072 x 16 × 2 word × bit × bank , respectively. The synchronous DRAM achieves high-speed data transfer using the pipeline architecture.	Original	PDF	PD4504161 PD4504161 304-bit 50-pin UPD4504161 upd4504161g5
NPCE781BA0DX Abstract: nuvoton NPCE781BA0DX 92HD79B1a5 92HD79B1 NPCE781 TPS51611 NPCE781B UP7534BRA8 npce781ba G7922R61U Text: 5 4 3 2 1 D D Berry DG15 Discrete/UMA Schematics Document Arrandale Intel PCH C C 2010-02-03 REV : A00 DY :None Installed UMA:UMA platform installed PARK:DIS PARK platform installed M96:DIS M96 platform installed VRAM_1G:VRAM 128M*16 installed Colay :Manual modify BOM	Original	PDF	512MB 64Mx16b C995R GPIO45 650ms NPCE781BA0DX nuvoton NPCE781BA0DX 92HD79B1a5 92HD79B1 NPCE781 TPS51611 NPCE781B UP7534BRA8 npce781ba G7922R61U
PD2026A Abstract: CXD2562Q saa7321gp PD2029A saa7321 PD2026B CXA8042AS CXD8567 CXD2562 PD2028B Text: CD Players ACOUSTIC RESEARCH CD-07 ACCUPHASE DAC10 ACCUPHASE DAC20 ACCUPHASE DC801 ACCUPHASE DP55V ACCUPHASE DP57 ACCUPHASE DP65 ACCUPHASE DP67 ACCUPHASE DP78 ACCUPHASE DP85 ACCUPHASE DP90 ACCUPHASE DP500 ADC CD 250XR AKAI CD26 AKAI CD37 AKAI CD55 AKAI CD57	Original	PDF	CD-07 DAC10 DAC20 DC801 DP55V DP500 250XR CD-M839 CD420 APD32A PD2026A CXD2562Q saa7321gp PD2029A saa7321 PD2026B CXA8042AS CXD8567 CXD2562 PD2028B
Untitled Abstract: No abstract text available Text: 4-WAY POWER DIVIDERS – 30 WATT SPECIFICATIONS FREQUENCY GHz 0.5 1 2 2.6 4 7 12 8 2 – – – – – – – – – INSERTION LOSS (dB, Max.) MODEL NUMBER 1 2 4 5.2 8 12.4 18 18 18 PD4-500/1000-30S PD4-1000/2000-30S PD4-2000/4000-30S PD4-2600/5200-30S	Original	PDF	PD4-500/1000-30S PD4-1000/2000-30S PD4-2000/4000-30S PD4-2600/5200-30S PD4-4000/8000-30S PD4-7000/12400-30S PD4-12000/18000-30S PD4-8000/18000-30S PD4-2000/18000-30S
PD4300 Abstract: No abstract text available Text: HIGH POWER DIVIDERS/COMBINERS FREQUENCY MHz INSERTION PHASE POWER LOSS BALANCE ISOLATION VSWR (Watts) (±dB, Max.) (±Deg. Max.) (dB, Min.) (Max.) (CW) MODEL NUMBER STANDARD CONNECTORS INPUT/OUTPUT OUTLINE 2-WAY DIVIDERS 0.16 – 0.32 0.225 – 0.40 0.32 – 0.60	Original	PDF	PD2-160/320-200S PD2-225/400-200S PD2-320/600-200S PD2-640/1200-200S PD2-800/900-250N PD2-930/1250-200S PD2-1000/2000-200S PD2-1000/2000-500N PD2-1200/1400-200S PD2-1400/2300-200S PD4300
Nuvoton NPCE781 Abstract: NPCE781BA0DX nuvoton NPCE781BA0DX npce781 RT8209EGQW 92HD79B1a5 RS880M G5285T11U NPCE781B HP C6602 Text: 5 4 3 2 1 Berry Discrete/UMA Schematics Document D C D AMD Danube CPU S1g4 AMD GPU Madison-LP/M96-LP M2 RS880M + SB820M C 2010-03-08 REV : A00 B B <Core Design> Size A4 Document Number 4 3 Rev 2 Sheet ai Berry AMD Discrete/UMA Date: Monday, March 08, 2010	Original	PDF	Madison-LP/M96-LP RS880M SB820M 4HH01 BQ24745 C6806, C6807, EC7928-EC7932. TP1309. EC704 Nuvoton NPCE781 NPCE781BA0DX nuvoton NPCE781BA0DX npce781 RT8209EGQW 92HD79B1a5 RS880M G5285T11U NPCE781B HP C6602
PS224 Abstract: PS235 PS835 PD416 PS-224 PD86 pd46 PS815 PD215 PD816 Text: 41E D MIL ELECTRONICS INC blbmhM n000271 1 • ■«* 1.80 • K - “ S ttlA ■>* ^ IN lit A 1 WATTS O F ISOLATED O U TPU T POW ER • T A T r) 7 • POWER SUPPLY MODEL 1.00 - /' SINGLE O R DUAL O U TPU TS PRINTED C IR CU IT MOUNTING LESS THAN 3/4 CUBIC INCH	OCR Scan	PDF	ps870 ps880 ps890 ps8100 pd510 pd512 pd210 pd212 pd410 pd412 PS224 PS235 PS835 PD416 PS-224 PD86 pd46 PS815 PD215 PD816
A8RN Abstract: uPD4502161 D4502161 Text: DATA SHEET MOS INTEGRATED CIRCUIT ju P D 4 5 0 2 1 6 1 2M-bit Synchronous DRAM Description The /¿PD4502161 is a high-speed 2,097,152-bit synchronous dynamic random-access memory, organized as 65,536 x 16 x 2 word x bit x bank , respectively. The synchronous DRAM achieves high-speed data transfer using the pipeline architecture.	OCR Scan	PDF	uPD4502161 152-bit 50-pin A8RN D4502161
Untitled Abstract: No abstract text available Text: MICROWAVE PIN DIODE DRIVERS T7 -FEATURES: • MIL-STD-883 SCREENING • TTL COMPATIBLE INPUTS • -6 5 ° TO +150°C STORAGE TEMP RANGE • -5 5 ° TO +125°C OPERATING TEMP RANGE OUTPUT CURRENT OUTPUT VOLTAGE OPEN CKT VEE , - 1 2	OCR Scan	PDF	MIL-STD-883 PD2112 PD217 PDF311 PD350 PD450 PD6304 PD650 PD1050-1 PDF2311
Microwave PIN diode Abstract: PD650 PD217 PD350 PD450 PD630 PDF311 Micro-Precision Technologies PD2112 PD1050 Text: 7 P MICROWAVE PIN DIODE DRIVERS w l — FEATURES: • -6 5 ° TO +150°C STORAGE TEMP RANGE • -5 5 ° TO +125°C OPERATING TEMP RANGE MODEL OUTPUT CURRENT DC mA POSITIVE NEGATIVE MIN MAX MIN MAX MIN PEAK mA) POS NEG OUTPUT VOLTAGE OPEN CKT (VEE = -1 2 )	OCR Scan	PDF	MIL-STD-883 PD1111 PD2112 PD217 PD3113 Microwave PIN diode PD650 PD350 PD450 PD630 PDF311 Micro-Precision Technologies PD1050
Untitled Abstract: No abstract text available Text: DATA SHEET MOS INTEGRATED CIRCUIT PD4502161 2M-bit Synchronous DRAM Description The ¿¡PD4502161 is a high-speed 2,097,152-bit synchronous dynam ic random -access memory, organized as 65,536 x 16 x 2 word x bit x bank , respectively. The synchronous DRAM achieves high-speed data transfer using the pipeline architecture.	OCR Scan	PDF	uPD4502161 PD4502161 152-bit 50-pin S50G5-80-7JF3 PD4502161 PD4502161. PD4502161G5-7JF:

PS224 Abstract: PD515 PD516 ps235 PD245 PS890 pd845 PD215 pd26 PD814 Text: POWER SUPPLY MODEL • 1 WATTS OF ISOLATED OUTPUT POWER • SINGLE OR DUAL OUTPUTS • PRINTED CIRCUIT MOUNTING ° LESS THAN 3/4 CUBIC INCH • PRINTED CIRCUIT MOUNTING ELECTRICAL SPECIFICATIONS Regulation for Input. .+ .5%	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: 7 P w 7 MICROWAVE PIN DIODE DRIVERS — FEATURES: • -6 5 ° TO +150°C STORAGE TEMP RANGE • -5 5 ° TO +125°C OPERATING TEMP RANGE MODEL OUTPUT CURRENT DC mA POSITIVE NEGATIVE MIN MAX MIN MAX MIN PEAK mA) POS NEG OUTPUT VOLTAGE OPEN CKT (VEE = -1 2 )	OCR Scan	PDF	MIL-STD-883
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /PD4502161 2M-bit Synchronous DRAM Description The ¿¡PD4502161 is a high-speed 2,097,152-bit synchronous dynam ic random -access memory, organized as 65,536 x 16 x 2 word x bit x bank , respectively. The synchronous DRAM achieves high-speed data transfer using the pipeline architecture.	OCR Scan	PDF	/IPD4502161 PD4502161 152-bit 50-pin S50G5-80-7JF3 PD4502161 PD4502161. PD4502161G5-7JF:
UPB562C Abstract: pc1373H uPB562 IPB562C PC393C 705C-01 PC1373 mpb562 received frequency display for vhf receivers 1705C Text: t MOS DIGITAL INTEGRATED CIRCUIT j u P DI 705 C -012 P H A S E LO C K ED LO O P F R E Q U E N C Y S Y N T H E S IZ E R T V D IG IT A L T U N IN G S Y S T E M C O N T R O L LE R C M O S LS I JUPD1705C-012 is a CMOS LSI developed for television receivers of PLL frequency synthesizer system designed	OCR Scan	PDF	uPD1705C-012 pre-scaler/uPB562C, UPB562C pc1373H uPB562 IPB562C PC393C 705C-01 PC1373 mpb562 received frequency display for vhf receivers 1705C