sdram schematic diagram
Abstract: MT48LC1M16A1S D4564163 AN218 EP7312 a2523 MT48LC4M16A2
Text: AN218 Application Note INTERFACING THE EP7312 WITH SDRAM 1. INTRODUCTION The focus of this note is to aid product developers in successfully creating an EP7312 design that utilizes SDRAM. It does not cover the software configuration or internal operation of the
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AN218
EP7312
EP7312,
EP73xx
DS508)
T48LC1M
16A1S
MT48LC1M16A1S
sdram schematic diagram
D4564163
AN218
a2523
MT48LC4M16A2
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apd456
Abstract: No abstract text available
Text: 9 MOS INTEGRATED CIRCUIT pPD4564441,4564841,4564163 for Rev. E 64 M-bit Synchronous DRAM 4-bank, LVTTL Description The pPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304x4x4, 2,097,152x8x4, 1,048,576x16x4 word x bit x bank , respectively.
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pPD4564441
pPD4564441,
864-bit
304x4x4,
152x8x4,
576x16x4
54-pin
apd456
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PD23C64020
Abstract: PD45D128442 4M84 PD45D128842 256M5 0443 IC PD23C64000AL 45V16A PD264 A80L
Text: IC Memory CD-ROM IC Memory CD-ROM X13769XJ2V0CD00 04-1 IC Memory Dynamic RAM • Synchronous DRAM: SDR Single Data Rate , 256M bits (x4 bits organization) Density (bits) Organization (words × bits × banks) Part number 256M★ 16M×4×4 µ PD45256441 Speed
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X13769XJ2V0CD00
A10BL
8K/64
256M5
PD45256441
54-pin
PC133
PC100
MC-22000
PD23C64020
PD45D128442
4M84
PD45D128842
0443 IC
PD23C64000AL
45V16A
PD264
A80L
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cs102m
Abstract: CS-102M BCC37 MA1040 1BT70 27C1024 BSC27 5cs5 rpc01 PD434008ALE-12
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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V850E/MA1
PD703103A
PD703105A
PD703106A
PD703106A
PD703107A
PD703107A
PD70F3107A
PD70F3107A
U15179JJ2V0AN002
cs102m
CS-102M
BCC37
MA1040
1BT70
27C1024
BSC27
5cs5
rpc01
PD434008ALE-12
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-454CB646 4M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454CB646 is a 4,194,304 words by 64 bits synchronous dynamic RAM module on which 4 pieces of 64M
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MC-454CB646
64-BIT
MC-454CB646
uPD4564163
MC-454CB646-A80
MC-454C
B646-A10
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-454CB64S 4 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-454CB64S is a 4,194,304 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 4 pieces of 64 M SDRAM: /¿PD4564163 (Revision E) are assembled.
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MC-454CB64S
64-BIT
MC-454CB64S
uPD4564163
MC-454CB64S-A80
MC-454CB64S-A10
MC-454CB6
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-454CB645 4M-W ORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454CB645 is a 4,194,304 words by 64 bits synchronous dynamic RAM module on which 4 pieces of 64M
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MC-454CB645
64-BIT
MC-454CB645
uPD4564163
MC-454C
B645-A10
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT ju P D 4 5 6 4 4 4 1 ,4 5 6 4 8 4 1 , 4 5 6 4 1 6 3 64 M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynam ic random-access memories, organized as 4,194,304x4x4, 2,097,152x8x4, 1,048,576x16x4 word x bit x bank , respectively.
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uPD4564441
864-bit
304x4x4,
152x8x4,
576x16x4
54-pin
S54G5-80-9JF
PD4564441
PD4564xxx.
pPD4564xxxG5
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT MC-458CD641LS 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-458CD641 LS is a 8,388,608 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 8 pieces of 64M SDRAM: ,PD4564163 are assembled.
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MC-458CD641LS
64-BIT
MC-458CD641
uPD4564163
M13348X)
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-454CB64S 4 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-454CB64S is a 4,194,304 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 4 pieces of 64 M SDRAM: ,PD4564163 (Revision E) are assembled.
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MC-454CB64S
64-BIT
MC-454CB64S
uPD4564163
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d4564841
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ;iP D 4 5 6 4 4 4 1 , 4 5 6 4 8 4 1 , 4 5 6 4 1 6 3 64M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4, 1,048,576 x16 x 4 word x bit x bank , respectively.
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64M-bit
uPD4564441
864-bit
54-pin
d4564841
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-454DA726 4 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC-454DA726 is an 4,194,304 words by 72 bits synchronous dynamic RAM module on which 5 pieces of 64M SDRAM : ,PD4564163 Rev. E are assembled. This module provides high density and large quantities of memory
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MC-454DA726
72-BIT
MC-454DA726
uPD4564163
C-454DA726-A80
C-454DA726-A10
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-454CB64S 4M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-454CB64S is a 4,194,304 words by 64 bits synchronous dynam ic RAM module (Small Outline DIMM) on which 4 pieces of 64 M SDRAM: ^¡PD4564163 are assembled.
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MC-454CB64S
64-BIT
MC-454CB64S
PD4564163
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-454CB645 4M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454CB645 is a 4,194,304 words by 64 bits synchronous dynamic RAM module on which 4 pieces of 64M
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OCR Scan
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MC-454CB645
64-BIT
MC-454CB645
uPD4564163
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT MC-458CD641LS 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-458CD641 LS is a 8,388,608 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 8 pieces of 64M SDRAM: ,PD4564163 are assembled.
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MC-458CD641LS
64-BIT
MC-458CD641
uPD4564163
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LX 2262
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT / PD4564441,4564841,4564163 64 M-bit Synchronous DRAM 4-bank, LVTTL Description The /¿PD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random -access memories, organized as 4,194,304x4x4, 2,097,152x8x4, 1,048,576x16x4 (word x bit x bank , respectively.
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uPD4564441
uPD4564841
uPD4564163
864-bit
304x4x4,
152x8x4,
576x16x4
54-pin
LX 2262
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT uPD4564441,4564841,4564163 for Rev. E 64M-bit Synchronous DRAM 4-bank, LVTTL Description The ^¡PD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4, 1,048,576 x16 x 4 word x bit x bank , respectively.
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OCR Scan
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uPD4564441
64M-bit
PD4564441,
864-bit
54-pin
S54G5-80-9JF-1
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-454CB64S 4 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-454CB64S is a 4,194,304 words by 64 bits synchronous dynam ic RAM module (Small Outline DIMM) on which 4 pieces of 64 M SDRAM: ^¡PD4564163 (Rev. E) are assembled.
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OCR Scan
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MC-454CB64S
64-BIT
MC-454CB64S
PD4564163
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-458CD64S 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-458CD64S is a 8,388,608 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 8 pieces of 64M SDRAM: ,PD4564163 (Revision E) are assembled.
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MC-458CD64S
64-BIT
MC-458CD64S
uPD4564163
-A10B/-A10BL
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-458CD641LS 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-458CD641 LS is a 8,388,608 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 8 pieces of 64M SDRAM: ^¡PD4564163 are assembled.
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OCR Scan
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MC-458CD641LS
64-BIT
MC-458CD641
PD4564163
M13348X)
M13949EJ3V0DS00
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT uPD4564441,4564841,4564163 for Rev. E 64M-bit Synchronous DRAM 4-bank, LVTTL Description The ^¡PD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4, 1,048,576 x16 x 4 word x bit x bank , respectively.
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OCR Scan
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uPD4564441
64M-bit
PD4564441,
864-bit
54-pin
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-454CB646 4M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454CB646 is a 4,194,304 words by 64 bits synchronous dynamic RAM module on which 4 pieces of 64M
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OCR Scan
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MC-454CB646
64-BIT
MC-454CB646
uPD4564163
MC-454CB646LFA]
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PDF
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Untitled
Abstract: No abstract text available
Text: NEC MOS INTEGRATED CIRCUIT MC-454CB64S 4M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-454CB84S is a 4,194,304 words by 64 bits synchronous dynamic RAM module(Small Outline DIMM) on which 4 pieces of 64MSDBAM : PD4564163 are assembled.
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MC-454CB64S
64-BIT
MC-454CB84S
64MSDBAM
uPD4564163
MC-454CB64S-A10
MC-454CB64S-
PD4564163
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PDF
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C-458CD64S-A10B
Abstract: No abstract text available
Text: DATA SHEET / MOS INTEGRATED CIRCUIT MC-458CD64S, 458CD64LS 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-458CD64S and MC-458CD64LS are a 8,388,608 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 8 pieces of 64M SDRAM: ^¡PD4564163 are assembled.
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MC-458CD64S,
458CD64LS
64-BIT
MC-458CD64S
MC-458CD64LS
PD4564163
C-458CD64S-A80
C-458CD
13041EJ6V0D
C-458CD64S-A10B
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