PF0047
Abstract: No abstract text available
Text: PF0047A/PF0067A MOS FET Power Amplifier Module for E-TACS Handy Phone HITACHI Features • High Efficiency — PF0047A: 58 % Typ at 1.2 W — PF0067A: 52 % Typ at 1.2 W • Low voltage operation: 4.8 V • High power gain: 1 mW input • Low power control current: 500 A Typ
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PF0047A/PF0067A
PF0047A:
PF0067A:
ADE-208-311B
D-85622
PF0047
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PF0067A
Abstract: No abstract text available
Text: H ITACH I PFO047A/PFOO67A MOS FET Power Amplifier Module for E-TACS Handy Phone HITACHI ADE-208-311B Z Preliminary 3rd. Edition July 1996 Features • High Efficiency PF0047A: 58 % Typ at 1.2 W PF0067A: 52 % Typ at 1.2 W • Low voltage operation: 4.8 V
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PFO047A/PFOO67A
PF0047A:
PF0067A:
ADE-208-311B
PF0047A/PF0067A
PF0047A/PF
PF0067A
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PF0131
Abstract: PF0141 PF0144 PF0145 PF0148 PFS 3000 PF0310A PF0049A PF0147 PF0040
Text: FET MODULE •High frequency amplifier Package Type No. cods RF-B2 PF0Q3Q PF0031 PF0032 PF0120 PF0121 PF0130 PF0131 PF0210 RF-B3 PF0040 PF0042 RF-E PFÓ02S PF0026 PF0027 PFQ04S PF0045A PF0047A PF0049A PFÖ065 PF0065A PF0O67A PF0144 PF0145 PF0146 PF0150 PF0231
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PF0031
PF0032
PF0120
PF0121
PF0130
PF0131
PF0210
PF0040
PF0042
PF0026
PF0141
PF0144
PF0145
PF0148
PFS 3000
PF0310A
PF0049A
PF0147
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Untitled
Abstract: No abstract text available
Text: PF0047A/PF0067A MOS FET Power Amplifier Module for E-TACS Handy Phone HITACHI ADE-208-311B Z Preliminary 3rd. Edition July 1996 Features • High Efficiency — PF0047A: 58 % Typ at 1.2 W — PF0067A: 52 % Typ at 1.2 W • Low voltage operation: 4.8 V •
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PF0047A/PF0067A
ADE-208-311B
PF0047A:
PF0067A:
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Untitled
Abstract: No abstract text available
Text: PF0045 Series Product Preview MOS FET Power Amplifier Module Mobile Phone PF0045: For AM PS 824-849 MHz PF0047: For E-TACS 872-905 MHz O U T LIN E DRAW ING I FEATURES ’ Light and thin package 5 g. 5.0 mm t 1 Low voltage operation 6V • Low power control current 300 ¿iA
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PF0045
PF0045:
PF0047:
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Untitled
Abstract: No abstract text available
Text: PF0047A/PF0067A-MOS FET Power Amplifier Module for E-TACS Handy Phone Pin Arrangement Features • High Efficiency PF0047A: 58 % typ. at 1.2 W PF0067A: 52 % typ. at 1.2 W • Low voltage operation: 4.8 V • High power gain: 1 mW input • Low power control current: 500 iA typ.
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PF0047A/PF0067A-----------MOS
PF0047A:
PF0067A:
PF0047A
F0067A
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pf0067a
Abstract: BL01RN1-A62 K 872 PF0047A Hitachi Scans-001
Text: PF0047A/PF0067A MOS FET Power Amplifier Module for E-TACS Handy Phone HITACHI Features • High Efficiency — PF0047A: 58 % Typ at 1.2 W — PF0067A: 52 % Typ at 1.2 W • Low voltage operation: 4.8 V • High power gain: 1 mW input • Low power control current: 500 xA Typ
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PF0047A/PF0067A
PF0047A:
PF0067A:
ADE-208-311B
BL01RN1-A62-001
pf0067a
BL01RN1-A62
K 872
PF0047A
Hitachi Scans-001
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HD 62 hitachi
Abstract: No abstract text available
Text: ADE-208-251A Z PF0047A/PF0067A MOS FET Power Amplifier Module for E-TACS Handy Phone Preliminary HITACHI January 1995 Pin Arrangement Features • High Efficiency PF0047A: 58 % typ. at 1.2 W PF0067A: 52 % typ. at 1.2 W • Low voltage operation: 4.8 V • High power gain: 1 mW input
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ADE-208-251A
PF0047A/PF0067A
PF0047A:
PF0067A:
HD 62 hitachi
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PF0045
Abstract: No abstract text available
Text: PF0045 Series Product Preview MOS FET Power Amplifier Module Mobile Phone PF0045: For AMPS 824-849 MHz PF0047: For E-TACS 872-905 MHz I O U T L IN E DRAW ING • FEATURES ' Light and thin packagc 5 g, 5.0 mm t ' Low voltage operation 6V 1 Low power control current 300
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PF0045
PF0045:
PF0047:
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All mobile ic code image
Abstract: hitachi pbx HD81504 HD814103 ic 747 cn hitachi 4-bit lcd PF0145 DTMF mobile HA22004 HA16811A
Text: CONTENTS Selection Guide fo r A p p lic a tio n s . 7 • Telecom Network System.
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circuit diagrams retu 3.02
Abstract: APPLIED MICROSYSTEMS CORP 68020 a23 445-1 VMIVME DR11W 0000A018 Panduit 050-040-455 S43A MC68153 perkin
Text: VMIVME-DR11W-A VMEbus-T0-DR11W INTERFACE INSTRUCTION MANUAL DOCUMENT NO. 500-000121-000 E Revised 08 December 1993 VME MICROSYSTEMS INTERNATIONAL CORPORATION 12090 SOUTH MEMORIAL PARKWAY HUNTSVILLE, AL 35803-3308 205 880-0444 1-800-322-3616 N O T IC E The information in this document has been carefully checked and is
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VMIVME-DR11W-A
VMEbus-T0-DR11W
VMIC60
000009D8
00000A8C
DR11WA
00126C
00127C
FF00FF00
00128C
circuit diagrams retu 3.02
APPLIED MICROSYSTEMS CORP 68020
a23 445-1
VMIVME
DR11W
0000A018
Panduit 050-040-455
S43A
MC68153
perkin
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Untitled
Abstract: No abstract text available
Text: Signetìcs SCB68430 Direct Memory Access Interface DMAI Product Specification Microprocessor Products DESCRIPTION FEATURES The SCB68430 Direct Memory Access Interface (DMAI) is a single channel interface circuit which is intended to complement the performance and archi
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SCB68430
SCB68430
SCN68000
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HD81504
Abstract: hitachi pbx HA22004 HD64941 HD63084 HD64530 HA12158 HVU354 Hitachi hg51 PF0049A
Text: Selection Guide for Applications Telecom Network System Optical trunk 2.4 Gb/s, 10 Gb/s -C\ Multi-function phone . I |h Frame III relay / FTTH ATM-Lan □ • Exchange ISDN PC / / ^ \ ISDN line / FTTC ] fl| PBX . O h Amusement TV phones Mobile Communications
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HD64540]
HD64541]
HD81806]
HD81803]
HD81820
HD81504
hitachi pbx
HA22004
HD64941
HD63084
HD64530
HA12158
HVU354
Hitachi hg51
PF0049A
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HG62G
Abstract: HG71G154 hg62g051 HG62G019 HG71G063 HG71G HG71G030 HG62g014 HG51B HG62G035
Text: Wireless Communications ICs RF Power Amplifier Module Cellular Output PowerSupply Voltage Efficiency Part Number Standard W (V) (•/« Typ.) Technology 47% PF0025 AMPS 6.0 MOSFET 1.2 47% MOSFET PF0026 NMT900, TACS 1.2 6.0 PF0027 E-TACS 47% MOSFET 6.0 1.2
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PF0025
PF0026
NMT900,
PF0027
PF0030
PF0031
NMT900
PF0032
PF0040
PF0042
HG62G
HG71G154
hg62g051
HG62G019
HG71G063
HG71G
HG71G030
HG62g014
HG51B
HG62G035
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