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SW SPDT 6pin Abstract: HS350 VP215 PG10191EJ02V0DS Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2009TB L-BAND HIGH POWER SPDT SWITCH DESCRIPTION The µPG2009TB is an L-band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion	Original	PG2009TB PG2009TB SW SPDT 6pin HS350 VP215 PG10191EJ02V0DS	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2009TB L-BAND HIGH POWER SPDT SWITCH DESCRIPTION The µPG2009TB is an L-band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion	Original	PG2009TB PG2009TB	PDF
uPG2009TB-E3 Abstract: SW SPDT 6pin HS350 VP215 Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
PG2009TB Abstract: spdt mark s22 Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2009TB L-BAND HIGH POWER SPDT SWITCH DESCRIPTION The μPG2009TB is an L-band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion	Original	PG2009TB PG2009TB PG10191EJ02V0DS spdt mark s22	PDF