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    PHEMT MARKING CODE B Search Results

    PHEMT MARKING CODE B Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    54LS190/BEA Rochester Electronics LLC 54LS190 - BCD Counter, 4-Bit Synchronous Up/Down, With Mode Control - Dual marked (M38510/31513BEA) Visit Rochester Electronics LLC Buy
    5447/BEA Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) Visit Rochester Electronics LLC Buy
    TC4511BP Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, BCD-to-7-Segment Decoder, DIP16 Visit Toshiba Electronic Devices & Storage Corporation
    5962-8950303GC Rochester Electronics LLC ICM7555M - Dual Marked (ICM7555MTV/883) Visit Rochester Electronics LLC Buy

    PHEMT MARKING CODE B Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor SMD P2F

    Abstract: FPD4000AF PHEMT marking code a pHEMT transistor 360 transistor STD P2F smd p2f transistor MIL-HDBK-263 transistor P2F ATC600S1R0 FET MARKING CODE
    Text: PRELIMINARY FPD4000AF 4W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Output Power (P1dB) ♦ 10.5 dB Power Gain (G1dB) ♦ 49 dBm Output IP3 ♦ 10V Operation ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website


    Original     		FPD4000AF FPD4000AF ATC600S330JW250 T491B105M035AS7015 RCI-0603-10R1J PC-SP-000022-002 AMP-103185-2 transistor SMD P2F PHEMT marking code a pHEMT transistor 360 transistor STD P2F smd p2f transistor MIL-HDBK-263 transistor P2F ATC600S1R0 FET MARKING CODE PDF

    PHEMT marking code a

    Abstract: FET P2F pHEMT FET marking l transistor code p2f pHEMT FET marking A
    Text: PRELIMINARY FPD4000AF 4W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Output Power (P1dB) ♦ 10.5 dB Power Gain (G1dB) ♦ 49 dBm Output IP3 ♦ 10V Operation ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website


    Original     		FPD4000AF FPD4000AF PHEMT marking code a FET P2F pHEMT FET marking l transistor code p2f pHEMT FET marking A PDF

    transistor P2F

    Abstract: p2f 250 PHEMT marking code a p2F 45 FPD2000AS MIL-HDBK-263 40 P1dB 2W transistor marking code 1325
    Text: PRELIMINARY • PERFORMANCE 1.8 GHz ♦ 33 dBm Output Power (P1dB) ♦ 14 dB Power Gain (G1dB) ♦ 46 dBm Output IP3 ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available on Website ♦ Usable Gain to 4GHz


    Original     		FPD2000AS FPD2000AS 350mA transistor P2F p2f 250 PHEMT marking code a p2F 45 MIL-HDBK-263 40 P1dB 2W transistor marking code 1325 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY • PERFORMANCE 1.8 GHz ♦ 33 dBm Output Power (P1dB) ♦ 14 dB Power Gain (G1dB) ♦ 46 dBm Output IP3 ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available ♦ Usable Gain to 4GHz • DESCRIPTION AND APPLICATIONS


    Original     		FPD2000AS FPD2000AS 350mA PDF

    transistor SMD P1f

    Abstract: R04003 A114 A115 FPD1000AS JESD22 ATC600S5R6CW250 PHEMT marking code a ATC600S680 marking code P1F
    Text: FPD1000AS 1W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ -42 dBc WCDMA ACPR at 21 dBm PCH ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available


    Original     		FPD1000AS FPD1000AS R04003, CB100 transistor SMD P1f R04003 A114 A115 JESD22 ATC600S5R6CW250 PHEMT marking code a ATC600S680 marking code P1F PDF

    ATC600S680JW250

    Abstract: PC-SP-000010-006 AMP-103185-2 atc600s ATC600S5R T491B105M035AS7015 ATC600S2R0BW250 ATC600S680 ATC600S3R
    Text: PRELIMINARY • PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available ♦ Usable Gain to 4GHz • DESCRIPTION AND APPLICATIONS


    Original     		FPD1000AS FPD1000AS R04003, CB100 ATC600S680JW250 PC-SP-000010-006 AMP-103185-2 atc600s ATC600S5R T491B105M035AS7015 ATC600S2R0BW250 ATC600S680 ATC600S3R PDF

    Transistor p1f

    Abstract: MARKING P1F ON MARKING P1F p1f on P1F MARKING marking code P1F A114 A115 FPD1000AS FPD4000AS
    Text: FPD4000AS 2.5W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 34.5 dBm Output Power (P1dB) ♦ 12 dB Power Gain (G1dB) ♦ 45 dBm Output IP3 ♦ 8V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available on Website


    Original     		FPD4000AS FPD4000AS 200mA Transistor p1f MARKING P1F ON MARKING P1F p1f on P1F MARKING marking code P1F A114 A115 FPD1000AS PDF

    Untitled

    Abstract: No abstract text available
    Text: TAT7469 CATV 75 Ω pHEMT Dual RF Amplifier Applications • • • • Edge QAM Gain Stage MDU Output RF Distribution Amplifiers Low Noise Optical TIA SOIC-8 Package Product Features Functional Block Diagram • 75 Ω, 50 MHz to 1200 MHz Bandwidth • RF Low Noise Figure: 3.2 dB to 1000 MHz


    Original     		TAT7469 S21Typ PDF

    spf-5043

    Abstract: MARKING SPF5043Z spf-5043z SPF5043 spf5043z TAJB104KLRF SPF5043ZPCK1 SPF5043ZSR spf5043zsq
    Text: SPF5043Z SPF5043Z 50MHz to 4000MHz, GaAs pHEMT Low Noise MMIC Amplifier 50MHz to 4000MHz, GaAs pHEMT LOW NOISE MMIC AMPLIFIER Product Description Features The SPF5043Z is a high performance pHEMT MMIC LNA designed for operation from 50MHz to 4000MHz. The on-chip active bias network provides stable current over temperature and process threshold voltage variations. The SPF5043Z offers ultra-low noise figure and high linearity


    Original     		SPF5043Z 50MHz 4000MHz, SPF5043Z 4000MHz. spf-5043 MARKING SPF5043Z spf-5043z SPF5043 TAJB104KLRF SPF5043ZPCK1 SPF5043ZSR spf5043zsq PDF

    MARKING SPF5043Z

    Abstract: SPF5043Z
    Text: SPF5043Z SPF5043Z 50MHz to 4000MHz, GaAs pHEMT Low Noise MMIC Amplifier 50MHz to 4000MHz, GaAs pHEMT LOW NOISE MMIC AMPLIFIER Product Description Features The SPF5043Z is a high performance pHEMT MMIC LNA designed for operation from 50MHz to 4000MHz. The on-chip active bias network provides stable current over temperature and process threshold voltage variations. The SPF5043Z offers ultra-low noise figure and high linearity


    Original     		SPF5043Z 50MHz 4000MHz, SPF5043Z 4000MHz. MARKING SPF5043Z PDF

    CXE1089Z

    Abstract: MMIC SOT 89 marking CODE 02 CXE-1089 1200MHZ lna CXE1089
    Text: CXE-1089Z CXE-1089Z 50MHz to 1200MHz 75Ω pHEMT MMIC LNA 50MHz to 1200MHz 75Ω pHEMT MMIC LNA Package: SOT-89 Product Description Features RFMD’s CXE-1089Z is a high performance 75Ω pHEMT MMIC low-noise amplifier utilizing a Darlington configuration with active bias. The active


    Original     		CXE-1089Z 50MHz 1200MHz CXE-1089Z OT-89 Frequency6-678-5570 CXE1089Z MMIC SOT 89 marking CODE 02 CXE-1089 1200MHZ lna CXE1089 PDF

    P3F filtronic

    Abstract: pHEMT FET marking A FPD10000AF MIL-HDBK-263 PHEMT marking code a PHEMT marking code B
    Text: PRELIMINARY FPD10000AF 10W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 40 dBm Output Power (P1dB) ♦ 11 dB Power Gain (G1dB) ♦ -44 dBc WCDMA ACPR at 30 dBm output power ♦ 180 to 300 mA typical quiescent current (IDQ) ♦ 55% Power-Added Efficiency


    Original     		FPD10000AF FPD10000AF FPD10000AF) P3F filtronic pHEMT FET marking A MIL-HDBK-263 PHEMT marking code a PHEMT marking code B PDF

    Untitled

    Abstract: No abstract text available
    Text: CXE-1089Z CXE-1089Z 50MHz to 1200MHz 75Ω pHEMT MMIC LNA 50MHz to 1200MHz 75Ω pHEMT MMIC LNA Package: SOT-89 Product Description Features RFMD’s CXE-1089Z is a high performance 75Ω pHEMT MMIC low-noise amplifier utilizing a Darlington configuration with active bias. The active


    Original     		CXE-1089Z 50MHz 1200MHz 1200MHz OT-89 CXE-1089Z 75VDC, PDF

    MARKING CODE ACOM

    Abstract: No abstract text available
    Text: GaAs SP2T 2.7V High Power Switch DC - 3 GHz MASWSS0117 V 1.00 Features n n n n n n Functional Block Diagram Low Voltage Operation: 2.7 V High IP3: +56 dBm Low Insertion Loss: 0.30 dB at 1 GHz High Isolation: 25 dB at 1 GHz Miniature Package: SC70 6L 0.5 micron GaAs PHEMT Process


    Original     		MASWSS0117 MASWSS0117 MARKING CODE ACOM PDF

    Untitled

    Abstract: No abstract text available
    Text: TQL5000 PRELIMINARY DATASHEET WLAN PRODUCTS LNA for5 GHz UNII Band 802.11a Systems Vdd In Out Features 4.9 to 5.9 GHz Frequency Coverage Low Noise Figure Src High Gain Low Current: 8mA Typical @ 3V Product Description: 50-ohm Input and Output Match The TQL5000 is a low noise amplifier designed for 802.11a receive applications


    Original     		TQL5000 TQL5000 50-ohm PDF

    CXE-1089Z

    Abstract: CXE1089Z CXE1089 1008LS marking code sirenza
    Text: CXE-1089Z CXE-1089Z 50MHz to 1200MHz 75Ω pHEMT MMIC LNA 50MHz to 1200MHz 75Ω pHEMT MMIC LNA Package: SOT-89 Product Description Features RFMD’s CXE-1089Z is a high performance 75Ω pHEMT MMIC low-noise amplifier utilizing a Darlington configuration with active bias. The active


    Original     		CXE-1089Z 50MHz 1200MHz 1200MHz OT-89 CXE-1089Z EDS-105785 CXE1089Z CXE1089 1008LS marking code sirenza PDF

    MARKING CODE ACOM

    Abstract: aCOM marking M513 MASWSS0117 MASWSS0117SMB MASWSS0117TR MASWSS0117TR-3000 PHEMT marking code a
    Text: GaAs SPDT 2.7 V High Power Switch DC - 3.0 GHz Features • • • • • • MASWSS0117 V2 Functional Block Diagram Low Voltage Operation: 2.7 V High IP3: +56 dBm Low Insertion Loss: 0.30 dB at 1 GHz High Isolation: 25 dB at 1 GHz SC70 6-Lead Package 0.5 micron GaAs PHEMT Process


    Original     		MASWSS0117 MASWSS0117 SC-70 MARKING CODE ACOM aCOM marking M513 MASWSS0117SMB MASWSS0117TR MASWSS0117TR-3000 PHEMT marking code a PDF

    MASWSS0204 marking

    Abstract: MARKING CODE ACOM M513 MASWSS0117 MASWSS0204 MASWSS0204SMB MASWSS0204TR-3000 aCOM marking
    Text: RoHS Compliant GaAs SPDT 2.7 V High Power Switch DC - 3.0 GHz Features • • • • • • • • • • MASWSS0204 V1 Functional Block Diagram Low Voltage Operation: 2.7 V High IP3: +56 dBm Low Insertion Loss: 0.30 dB at 1 GHz High Isolation: 25 dB at 1 GHz


    Original     		MASWSS0204 MASWSS0117 MASWSS0204 MASWSS0204 marking MARKING CODE ACOM M513 MASWSS0117 MASWSS0204SMB MASWSS0204TR-3000 aCOM marking PDF

    Untitled

    Abstract: No abstract text available
    Text: TAT7460B1A 75Ω 5V 50-2600 MHz RF Amplifier Applications • • • • • Distribution Amplifiers Multi-Dwelling Units Drop Amplifiers Single-ended Gain Block FTTH Receivers T SOT-89 Package Product Features • • • • • 1A 0B 46 7 AT Functional Block Diagram


    Original     		TAT7460B1A OT-89 TAT7460B1A PDF

    Untitled

    Abstract: No abstract text available
    Text: SXE1089Z SXE1089Z 0.05GHz to 3GHz, Cascadable pHEMT MMIC Amplifier 0.05GHz to 3GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SXE1089Z is a high performance pHEMT MMIC amplifier utilizing a patented self-bias Darlington topology housed in a lowcost, surface


    Original     		SXE1089Z 05GHz OT-89 SXE1089Z OT-89 PDF

    Untitled

    Abstract: No abstract text available
    Text: SXE1089Z SXE1089Z 0.05GHz to 3GHz, Cascadable pHEMT MMIC Amplifier 0.05GHz to 3GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SXE1089Z is a high performance pHEMT MMIC amplifier utilizing a patented self-bias Darlington topology housed in a lowcost, surface


    Original     		SXE1089Z 05GHz SXE1089Z OT-89 OT-89 SXE1089Z" PDF

    FPD200P70

    Abstract: TL11 TL22 l420 FPD200P70SR
    Text: FPD200P70 FPD200P70 High Frequency Packaged pHEMT HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD200P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25mmx200mm Schottky barrier gate, defined by high-resolution stepper-based photolithography.


    Original     		FPD200P70 FPD200P70 25mmx200mm 20dBm 26GHz 15GHz FPD200P70-AJ TL11 TL22 l420 FPD200P70SR PDF

    IP1dB

    Abstract: TQL500 7 NF 13 0600 M
    Text: TQL5000 DATASHEET WLAN PRODUCTS RF Input LNA for 5GHz UNII Band 802.11a Systems Vdd Features 4.9 to 5.9 GHz Frequency Coverage Low Noise Figure High Gain RF Output Src Low Current: 8mA Typical @ 3V Product Description: 50-ohm Input and Output Match The TQL5000 is a low noise amplifier designed for 802.11a receive applications


    Original     		TQL5000 50-ohm TQL5000 IP1dB TQL500 7 NF 13 0600 M PDF

    PHEMT marking code M

    Abstract: triquint LNA
    Text: TQL5000 DATASHEET PRELIMINARY WLAN PRODUCTS RF Input LNA for 5GHz UNII Band 802.11a Systems Vdd Features 4.9 to 5.9 GHz Frequency Coverage Low Noise Figure High Gain RF Output Src Low Current: 8mA Typical @ 3V Product Description: 50-ohm Input and Output Match


    Original     		TQL5000 50-ohm TQL5000 PHEMT marking code M triquint LNA PDF