color sensitive PHOTO TRANSISTOR
Abstract: Rise time of photo transistor KDT3002A npn photo transistor 3mm photo transistor
Text: Silicon photo transistor KDT3002A The KDT3002A is high sensitivity NPN silicon photo [Unit : mm] Dimensions transistor mounted in Φ3mm T-1 all plastic mold type. This photo transistor is both compact and easy to mount. Features Higly sensitive photo transistor
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KDT3002A
KDT3002A
color sensitive PHOTO TRANSISTOR
Rise time of photo transistor
npn photo transistor
3mm photo transistor
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Untitled
Abstract: No abstract text available
Text: Silicon photo transistor KDT3002A Dimensions The KDT3002A is high sensitivity NPN silicon photo transistor mounted in [Unit : mm] 3mm T-1 all plastic mold type. This photo transistor is both compact and easy to mount. Features Higly sensitive photo transistor
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KDT3002A
KDT3002A
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PHOTO TRANSISTOR
Abstract: Rise time of photo transistor photo transistor high current
Text: PRODUCTION SPECIFICATION PRODUCT LINE : PHOTO TRANSISTOR TITLE : HI-T70MB 1. GENERAL DESCRIPTION The HI-T70MB is a high sensitive NPN silicon photo transistor mounted in TO-18 type header with clear epoxy encapsulation. This photo transistor have awide angular response and
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HI-T70MB
HI-T70MB
200Lux
2000Lux
PHOTO TRANSISTOR
Rise time of photo transistor
photo transistor high current
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dual photodiode
Abstract: photodiode "far infrared" S8030 KPIC1028E01 S8064 SE-171
Text: PHOTO IC Photo IC for rangefinder NEW S8030, S8064 Photo IC designed for near/far distance detection S8030 and S8064 are light modulation photo ICs consisting of a dual photodiode and a control/processing circuit. When used with an infrared LED and light emitting/receiving lenses, these photo ICs detect the distance near or far to an object at a certain
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S8030,
S8064
S8030
S8064
SE-171
KPIC1028E01
dual photodiode
photodiode "far infrared"
KPIC1028E01
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Untitled
Abstract: No abstract text available
Text: N EC ELECTRONICS INC 30E D L^27S55 0 02T77b b • T " .4 |-7 5 PHOTO INTERRUPTER PS4008 PHOTO INTERRUPTER DESCRIPTION PACKAGE DIMENSIONS The PS4008 photo coupled interrupter module containing a GaAs in millimeters inches light em itting diode and an NPN silicon photo-transistor,
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27S55
02T77b
PS4008
PS4008
T-41-73
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transistor ZR
Abstract: No abstract text available
Text: N E C 30E.D ELECTRONICS INC • b 457555 005T7â5 1 ■ PHOTO IN TERRUPTER PS4502 PHOTO INTERRUPTER DESCRIPTIO N PACKAG E DIMENSIONS in millimeters inches The PS4502 photo coupled interrupter module containing a GaAs light emitting diode and an NPN silicon darlington connected photo
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005T7
PS4502
PS4502
bHH7555
T-41-73
25-ZtW
transistor ZR
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DIODE S6 73
Abstract: No abstract text available
Text: N E C ELECTRONICS INC 3QE D • b4S7S5S 002^050 T ■ -p -lj-l-*J 3 PHOTO SENSER _ PS6001A PHOTO REFLECTIVE SE N SE R D ESCRIPTIO N The PS6001A it a photo reflective senser containing a GaAs light emitting diode and an NPN silicon photo-transistor.
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PS6001A
PS6001A
b4E7S25
y/-73
DIODE S6 73
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K 4005 transistor
Abstract: "Photo Interrupter" PS4001 ir 4009 pa 4009 transistor 4003 K 4005 ps4009
Text: NEC PHOTO INTERRUPTERS ELECTRON DEVICE p s 400 i , p s 4003, p s 4005,p s 4007, p s 4009 PHOTO INTERRUPTER NEPOC SERIES DESCRIPTION The PS4001, PS4003, PS4005, PS4007, PS4009 are photo coupled interrupter modules containing a GaAs light emitting diode and an NPN silicon darlington connected photo-transistor.
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PS4001,
PS4003,
PS4005,
PS4007,
PS4009
CHARACTERIS492
K 4005 transistor
"Photo Interrupter" PS4001
ir 4009
pa 4009
transistor 4003
K 4005
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03F1
Abstract: TLN103A TPS603A
Text: TOSHIBA TPS603A TOSHIBA PHOTO TRANSISTOR SILICON NPN EPITAXIAL PLANAR TPS603A PHOTO TRANSISTOR FOR PHOTO SENSOR Unit in mm PHOTOELECTRIC COUNTER VARIOUS KINDS OF READERS POSITION DETECTION CONTROLLER OF HOME ELECTRIC EQUIPM ENT DETECTOR FOR STOBOSCOPIC CONTROL
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TPS603A
TLN103A
TLN103A
03F1
TPS603A
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transistor 1052
Abstract: WPDT-317D photo darlington sensor Rise time of photo transistor p317d
Text: Photo Transistor Waitrony Module No.: WPDT-317D 1. General Description: The WPDT-317D is ; output NPN photo dai transistor mounted in an end black epoxy package. This photo darlington transistor narrow angular response. Dimensions 2. Features > > ^ > Compact 03mm
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WPDT-317D
WPDT-317D
Temper317D
transistor 1052
photo darlington sensor
Rise time of photo transistor
p317d
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"Photo Interrupter"
Abstract: photo diod PS4501
Text: E C ELECTRONICS INC 30E D • k4275S5 002^700 fi ■ T"'-*+1 - X 3 PHOTO INTERRUPTER PS4501 PHOTO IN T E R R U P T E R DESCRIPTION PACKAGE DIMENSIONS The PS4501 photo coupled interrupter module containing a GaAs in m illim tttft light emitting diode and an NPN silicon photo-transistor.
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PS4501
PS4501
"Photo Interrupter"
photo diod
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waitrony
Abstract: WPDT-270 photo darlington sensor
Text: Photo Transistor Waitrony Module No.: WPDT-270 1. General Description: The WPDT-270 is a high output NPN photo darlington transistor mounted in a water clear end looking epoxy package. This small photo darlington transistor permits narrow angular response.
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WPDT-270
WPDT-270
PDT-270
waitrony
photo darlington sensor
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toshiba 4b1
Abstract: 4b1 toshiba photo interrupter darlington sensor TLN107A TPS617 TLN107
Text: TO SHIBA TPS617 TPS617 TOSHIBA PHOTO DARLINGTON TRANSISTOR SILICON NPN EPITAXIAL PLANAR Unit in mm PHOTO DARINGTON TRANSISTOR FOR PHOTO INTERRUPTER PHOTOELECTRIC COUNTER POSITION DETECTION AUTOMATIC CONTROL UNIT Visible light cut type black package High sensitivity : I l = 1.4mA (TYP.)
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TPS617
TLN107A,
TLN107A
driven40mm
TPS617
toshiba 4b1
4b1 toshiba
photo interrupter darlington sensor
TLN107
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NEC PS2001B
Abstract: PS2001B ps2001
Text: SEC PHOTO BECTM M DEVICE COUPLER PS2001B PHOTO COUPLER INDUSTRIAL USE -NEPO C SERIES - DESCRIPTION The PS2001B is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon photo transistor. FEATURES PACKAGE DIMENSIONS • High isolation voltage
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PS2001B
PS2001B
NEC PS2001B
ps2001
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Voltage senser
Abstract: PS6001A VC60 light senser IR SENSER
Text: N E C ELECTRONICS INC 3QE D • b4S7SSS QO^ñSñ T ■ - p - l j - l -* J3 PHOTO SENSER _ P S6 001 A PHOTO REFLECTIVE S E N S E R D ES C R IPT IO N The PS6001A it a photo reflective senser containing a GaAs light em itting diode and an NPN silicon photo-transistor.
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PS6001A
PS6001A
b427S25
f-41-73
bM275E5
Voltage senser
VC60
light senser
IR SENSER
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TPS607A
Abstract: photo interrupter darlington sensor
Text: TOSHIBA TPS607A TOSHIBA PHOTO DARLINGTON TRANSISTOR SILICON NPN EPITAXIAL PLANAR TPS607A PHOTO DARLINGTON TRANSISTOR FOR PHOTO INTERRUPTER PHOTOELECTRIC COUNTER POSITION DETECTION AUTOMATIC CONTROL UNIT • High sensitivity ; lL = 2mA TYP, • The same external shape as the infrared LED TLN107A, and is
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TPS607A
TLN107A,
TLN107A
--40mm
TPS607A
500//A
photo interrupter darlington sensor
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photo interrupter darlington sensor
Abstract: No abstract text available
Text: T O SH IB A TPS617 TOSHIBA PHOTO DARLINGTON TRANSISTOR SILICON NPN EPITAXIAL PLANAR TPS61 7 PHOTO DARINGTON TRANSISTOR FOR PHOTO INTERRUPTER PHOTOELECTRIC COUNTER POSITION DETECTION AUTOMATIC CONTROL UNIT • Visible light cut type black package • High sensitivity : I l = 1.4mA (TYP.)
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TPS617
TPS61
TLN107A,
TLN107A
--40mm
TPS617
photo interrupter darlington sensor
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317 TRANSISTOR
Abstract: OF IC 317 ML 317 WPDT-317
Text: Photo Transistor Waitrony M odule No.: W PD T-317 1. G eneral D escription: The WPDT-317 is a high output NPN photo darlington transistor mounted in a clear end looking epoxy package. This small photo darlington transistor permits narrow angular response.
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WPDT-317
WPDT-317
317 TRANSISTOR
OF IC 317
ML 317
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photo interrupter darlington sensor
Abstract: toshiba 4b1 TPS607A tps607 04b1 "Photo Interrupter" 4b1 toshiba TLN107A AUTOMATIC CONTROL UNIT
Text: TOSHIBA TPS607A TOSHIBA PHOTO DARLINGTON TRANSISTOR SILICON NPN EPITAXIAL PLANAR TPS607A PHOTO DARLINGTON TRANSISTOR FOR PHOTO INTERRUPTER Unit in mm PHOTOELECTRIC COUNTER 4 POSITION DETECTION AUTOMATIC CONTROL UNIT +0 ö 4 .4 -0 .2 +0 3-0 .2 2.4 ± 0 . 3
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TPS607A
TLN107A,
TLN107A
driven40mm
TPS607A
photo interrupter darlington sensor
toshiba 4b1
tps607
04b1
"Photo Interrupter"
4b1 toshiba
AUTOMATIC CONTROL UNIT
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TPS607A
Abstract: No abstract text available
Text: TO SHIBA TPS607A TOSHIBA PHOTO DARLINGTON TRANSISTOR SILICON NPN EPITAXIAL PLANAR T• P <; ■ MF fi n 7 » »a » PHOTO DARLINGTON TRANSISTOR FOR PHOTO INTERRUPTER U nit in mm 4 PHOTOELECTRIC COUNTER POSITION DETECTION -4r AUTOMATIC CONTROL UNIT +0 4.4 -0.2
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TPS607A
TLN107A,
TLN107A
TPS607A
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TLN101A
Abstract: TPS601A-B TPS601A tps604 toshiba TLN108 TPS604 photo 2870
Text: TPS601A TO SHIBA TOSHIBA PHOTO TRANSISTOR SILICON NPN EPITAXIAL PLANAR TPS601A PHOTO TRANSISTOR FOR PHOTO SENSOR Unit in mm PHOTOELECTRIC COUNTER POSITION DETECTION VARIOUS KINDS OF READERS • TO-18 metal package • High sensitivity. • Sharp directivity. Incident light can be effectively used.
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TPS601A
TPS604
TLN201
TPS601A
226//A
TLN101A
TPS601A-B
tps604 toshiba
TLN108
photo 2870
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Untitled
Abstract: No abstract text available
Text: PHOTO TRANSISTOR IflE D MARKTECH INTERNATIONAL 57^55 G D D O M G 1! M MTD6180 SILICON NPN EPITAXIAL PLANAR SILICON PHOTO TRANSISTOR FOR PHOTO SENSOR APPLICATIONS • OPTICAL SWITCH • INTERRUPTER • TAPE, CARD READERS FEATURES SYMBOL • Spectrally and mechanically matched with
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MTD6180
MTE1070A.
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Untitled
Abstract: No abstract text available
Text: PHOTO TRANSISTOR -^q,u 1ÔE D • STTÌbSS QQOOMQS MTD6060 SILICON NPN EPITAXIAL PLANAR -1“ I 1 MARKTECH INTERNATIONAL SILICON PHOTO TRANSISTOR FOR PHOTO SENSOR w ^ > - cj »T 77R M N APPLICATIONS • OPTICAL SWITCH • TAPE, CARD READERS • POSITION SENSOR
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MTD6060
MTE1040,
QDDD403
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transistor cms
Abstract: mtd6040 MTE1010A PHOTO TRANSISTOR
Text: PHOTO TRANSISTOR MARKTECH INTERNATIONAL IflE D STTTbSS G O G O m s MTD6040 u 3 SILICON NPN EPITAXIAL PLANAR SILICON PHOTO TRANSISTOR FOR PHOTO SENSOR APPLICATIONS • OPTICAL SWITCH • TAPE, CARD READ ERS • VELOCITY SENSO R FEATURES • High sensitivity: l|_=250/iA Typ. .
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MTD6040
250/iA
MTE1010A.
S0UHCE-MTE1010Â
transistor cms
mtd6040
MTE1010A
PHOTO TRANSISTOR
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