Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    PHOTOLITHOGRAPHY Search Results

    PHOTOLITHOGRAPHY Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MC-306

    Abstract: No abstract text available
    Text: Crystal unit SMALL SMD LOW / MEDIUM-FREQUENCY CRYSTAL UNIT MC-306 • High-density mounting-type SMD. • Photolithography finished allows uniform and stable performance. • Excellent reliability and environmental capability. Actual size Specifications characteristics


    Original
    MC-306 MC-306 PDF

    C-005R

    Abstract: 100 khz crystal C-001R C-002RX C-004R
    Text: Crystal unit SMALL CYLINDER LOW/MEDIUM-FREQUENCY CRYSTAL UNIT C-4-TYPE • Photolithography finished allows uniform and stable performance. • Small and light weight. ø1.5 x 6 mm • Excellent shock resistance and environmental capability. • Most suitable for pagers and card products like PCMCIA.


    Original
    C-001R C-002RX C-004R C-005R C-005R 100 khz crystal C-001R C-002RX C-004R PDF

    planar spiral coil

    Abstract: MicroMetrics HP 8510 MMI301 MMI-300 MMI304 MMI302 MMI300 MMI303 300 Series
    Text: Passive Components Passive Components: MMI 300 Series Spiral Inductors Description The MicroMetrics MMI 300 series of Spiral Inductors are formed by photolithography and plating techniques on quartz substrates. They eliminate the need for hand forming and ”staking“ of coil in hybrid circuits.


    Original
    MMI301 MMI302 MMI303 MMI304 planar spiral coil MicroMetrics HP 8510 MMI301 MMI-300 MMI304 MMI302 MMI300 MMI303 300 Series PDF

    GH15

    Abstract: gh15/17/18.1
    Text: Microwave SLC’s GENERAL INFORMATION In addition to the standard SLC products shown below, AVX is now able to offer bordered versions in these same dielectric families as detailed on the opposing page utilizing micron resolution photolithography and etching processes.


    Original
    50WVDC 100WVDC GH15 gh15/17/18.1 PDF

    HSH1500KS

    Abstract: MA150 MA200 Ultratech 250 W canon power
    Text: Imaging D A T A S H E E T Lighting Telecom Mercury Short Arc Lamps HSH1500KS Lamps for Photolithography Description PerkinElmer Optoelectronics is a leading manufacturer of mercury short arc lamps ranging in output power from 1000 to 8000 watts. These lamps are used in the


    Original
    HSH1500KS DS-183 HSH1500KS MA150 MA200 Ultratech 250 W canon power PDF

    nikon

    Abstract: nikon nsr 1505 NSR-1505 USH1002FNL nikon NSR nikon STEPPER HSH1002NEO nikon NSR g8
    Text: Imaging D A T A S H E E T Lighting Telecom Mercury Short Arc Lamps HSH1002NEO Lamps for Photolithography Description PerkinElmer Optoelectronics is a leading manufacturer of mercury short arc lamps ranging in output power from 1000 to 8000 watts. These lamps are used in the


    Original
    HSH1002NEO DS-179 nikon nikon nsr 1505 NSR-1505 USH1002FNL nikon NSR nikon STEPPER HSH1002NEO nikon NSR g8 PDF

    HSH1500CIEO

    Abstract: SUV1501CIL canon 350
    Text: Imaging D A T A S H E E T Lighting Telecom Mercury Short Arc Lamps HSH1500CIEO Lamps for Photolithography Description PerkinElmer Optoelectronics is a leading manufacturer of mercury short arc lamps ranging in output power from 1000 to 8000 watts. These lamps are used in the


    Original
    HSH1500CIEO DS-182 HSH1500CIEO SUV1501CIL canon 350 PDF

    Untitled

    Abstract: No abstract text available
    Text: FPD750 FPD7500.5 W Power pHEMT 0.5W POWER pHEMT Package Style: Bare Die Product Description Features The FPD750 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx750μm Schottky barrier gate, defined by high -resolution stepper-based photolithography. The double recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing


    Original
    FPD750 FPD7500 FPD750 mx750Î OT343, 12GHz 12GHzlable FPD750-000 FPD750-000SQ PDF

    lockin amplifier

    Abstract: pbs photoconductor lead selenide Model 289K 77058 70703
    Text: 5.0 127 PbS @ 289K V /A -10 10 A G M E CO NS TA NT Photolithography N MI X MA D ME 2.06 (52) -11 10 PbSe @ 243K PbS @ 243K -12 6000 WAVELENGTH (nm) Fig. 1 NEP of PbS and PbSe Detectors. 1.25 (32) Dimensions in inches (mm) Excellent detectors for the 1 to 4.5 µm region


    Original
    PDF

    MC-405

    Abstract: MC-406 6571a
    Text: Crystal unit SMD LOW/ MEDIUM-FREQUENCY CRYSTAL UNIT MC-405/406 Products number Q1 xMC 4 0 5 x x x x x 0 0 Q1 xMC 4 0 6 x x x x x 0 0 • • • • • High-density mounting-type SMD. Photolithography finished allows uniform, stable performance. Excellent environmental capability.


    Original
    MC-405/406 10-6/year MC-405 MC-406 MC-406 MC-405 6571a PDF

    C-001R

    Abstract: C-002RX C-004R C-005R
    Text: Crystal unit CYLINDER LOW/MEDIUM-FREQUENCY CRYSTAL UNIT C-001R C-2-TYPE/C-TYPE C-002RX C-2-TYPE C-004R C-005R Products number Q1 2C2 0 0 0 x x x x x 0 0 Q1 1C0 0 1Rx x x x x 0 0 Q1 1C0 2RXx x x x x 0 0 Q1 1C0 0 4Rx x x x x 0 0 Q1 1C0 0 5Rx x x x x 0 0 • Photolithography finished allows uniform and stable performance.


    Original
    C-001R C-002RX C-004R C-005R 10-6/year C-001R C-002RX C-004R C-005R PDF

    Untitled

    Abstract: No abstract text available
    Text: CRYSTAL UNIT TUNING FORK CH-308 - Photolithography finished allows uniform stable performance - Excellent shock resistance and environmental capability - Low power consumption - Suitable for time-keeping of clock and micro computer tR o H S • ELECTRICAL SPECIFICATIONS


    OCR Scan
    CH-308 500MQ CH-206 CS-146 CS-306 CS-519 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMD LOW/MEDIUM-FREQUENCY QUARTZ CRYSTAL MC-405/MC-406 • High-density mounting-type SMD. • Photolithography finish allows uniform, stable performance. • Excellent shock resistance and environmental capability. • Capable of covering low-frequency range from 20 kHz to 165 kHz.


    OCR Scan
    MC-405/MC-406 3000G MC-405 MC-406 PDF

    Untitled

    Abstract: No abstract text available
    Text: CYLINDER LOW/ MEDIUM-FREQUENCY QUARTZ CRYSTAL C-2-TYPE/C-TYPE C-001R C-002RX Photolithography finish allows uniform and stable performance. • Excellent shock resistance and environmental capability. • Respond to an extensive range of frequency, from 20 kHz to


    OCR Scan
    C-001R C-002RX 04ppm 3000G PDF

    Untitled

    Abstract: No abstract text available
    Text: MODEL : TO-306PS SERIES SURFACE MOUNT TYPE LOW FREQUENCY PLASTIC MOLDED PACKAGE # High density mounting type SMD OS # Photolithography finish allows uniform and stable performance 2.76 T3 8K # Excellent reliability and environmental capability # 2.54mm thickness which is equal to SMD type IC


    Original
    O-306PS 768KHz 000KHz 20ppm 50ppm 768KHz 3000G 54Max PDF

    DRAMs

    Abstract: Dram 168 pin EDO buffered PQFP-128 Multibank - DRAM Signal Path Designer Bus repeater 64MEDO
    Text: SIEMENS Trends in Memory Technology when CAS goes high again and initiates the next page access. Trends in Memory Technology DRAM speed improvements have historically come from process and photolithography advances. More recent improvements in DRAM performance however, have resulted from


    OCR Scan
    64M-EDO 4/x72 DRAMs Dram 168 pin EDO buffered PQFP-128 Multibank - DRAM Signal Path Designer Bus repeater 64MEDO PDF

    6571a

    Abstract: No abstract text available
    Text: Crystal unit SMD LOW/ MEDIUM-FREQUENCY CRYSTAL UNIT MC-405/MC-406 • High-density mounting-type SMD. • Photolithography finished allows uniform, stable performance. • Excellent shock resistance and environmental capability. • Capable of covering low-frequency range from 20 kHz to 165 kHz.


    OCR Scan
    MC-405/MC-406 3000G MC-405 MC-406 6571a PDF

    6571a

    Abstract: No abstract text available
    Text: Crystal unit SMD LOW/ MEDIUM-FREQUENCY CRYSTAL UNIT MC-405/MC-406 • High-density m ounting-type SM D . • Photolithography finished allows uniform, stable performance. • Excellent shock resistance and environmental capability. • Capable of covering low-frequency range from 20 kHz to 165 kHz.


    OCR Scan
    MC-405/MC-406 6571a PDF

    epson 32.768KHZ CRYSTALS

    Abstract: mc306 crystal DG00003EC 32.768khz crystal MC306 Quartz Crystal 32.768KHz 21FF QUARTZ 32,768KHz epson photolithography 32.768khz crystal data sheet
    Text: Surface Mount Quartz Crystals - Seiko Epson Low Frequency MC306 Series Features • Frequency range 20kHz-165kHz Photolithography finish allows uniform and stable performance • Excellent shock resistance and environmental capability • Ex-stock availability


    Original
    MC306 20kHz-165kHz 10ppm 20ppm 50ppm 100ppm 04ppm/ 3000G 768kHz MC306 epson 32.768KHZ CRYSTALS mc306 crystal DG00003EC 32.768khz crystal Quartz Crystal 32.768KHz 21FF QUARTZ 32,768KHz epson photolithography 32.768khz crystal data sheet PDF

    pseudomorphic HEMT

    Abstract: fpd7612general FPD7612 MIL-HDBK-263 AlGaAs resistivity
    Text: FPD7612 FPD7612General Purpose pHEMT GENERAL PURPOSE pHEMT Package Style: Bare Die Product Description Features The FPD7612 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx200μm Schottky barrier gate, defined by high-resolution stepper-based photolithography. The recessed


    Original
    FPD7612 FPD7612General FPD7612 25mx200m 12GHz 18GHz 22-A114. MIL-STD-1686 MIL-HDBK-263. pseudomorphic HEMT MIL-HDBK-263 AlGaAs resistivity PDF

    FPD3000

    Abstract: MIL-HDBK-263
    Text: FPD3000 FPD30002W Power pHEMT 2W POWER pHEMT Package Style: Bare Die Product Description Features The FPD3000 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx3000μm Schottky barrier gate, defined by high resolution stepper-based photolithography. The recessed gate structure minimizes


    Original
    FPD3000 FPD30002W FPD3000 25mx3000m 12GHz 42dBm FPD3000-000 MIL-HDBK-263 PDF

    pseudomorphic HEMT

    Abstract: FPD2250 MIL-HDBK-263 InP transistor HEMT
    Text: FPD2250 FPD22501.5W Power pHEMT 1.5W POWER pHEMT Package Style: Bare Die Product Description Features The FPD2250 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx2250μm Schottky barrier gate, defined by highresolution stepper-based photolithography. The recessed gate structure minimizes


    Original
    FPD2250 FPD22501 FPD2250 25mx2250m 32dBm 12GHz 42dBm FPD2250-000 pseudomorphic HEMT MIL-HDBK-263 InP transistor HEMT PDF

    ot 306

    Abstract: CS-306 CH-308 CS-405 SUNNY TR 308 OF cs 308 CH-206 CS-206 CS306
    Text: CH-206, CH-308, CS-206, CS-306 : CH-206 - Photolithography finished allows uniform stable performance - Excellent shock resistance and environmental capability - Low power consumption - Suitable for time-keeping of clock and micro computer CH-308 TUNING FORK TYPE


    OCR Scan
    CH-206 CH-308 CH-206, CH-308, CS-206, CS-306 768kHz, 000kHz 50ppm 04ppm/C2 ot 306 CS-306 CH-308 CS-405 SUNNY TR 308 OF cs 308 CH-206 CS-206 CS306 PDF

    ED98

    Abstract: 64MEDO
    Text: [ren d s tn M em ory Eecnnoiogy w UMrtH spsea irrpnovemenis nave nisfaricany come from process and photolithography B !3 advances, More recent ¡mpnoYamenlH in DRAM •_■■. I I k'. r-. I ■ .-.r-. . l i - i r I CHI I ■-■'Z I 'h n i L i'V iO V C I.


    OCR Scan
    13urst-EDO 64M-EDO ED98 64MEDO PDF