Untitled
Abstract: No abstract text available
Text: 3875081 G E SOLID STATE 01E 19732 D Optoelectronic S pecifications_ HA RR IS S E M I C O N D S E C T O R 37E D • LiBDSSTl 0 0 2 7 1 ^ 4 3 ■ HAS Photon Coupled Isolator H 1 1 G 1- H 1 1 G2 Ga As Infrared Emitting Diode & NPN Silicon Darlington Connected Phototransistor
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S-429S
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PHOTOTRANSISTOR 3 LEGS
Abstract: EE-SX1235-P2 IR sensor and photo diode pair Electric Welding Machine diagram EE-SA401-P welding machine diagram
Text: omRon Technical Information Technical Information Non-amplified Output Sensing Methods Features Operating principle Sensing method Transmissive A pair of light source element LED and detector element (phototransistor) opposing each other on the same optical axis is housed in a case to
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Untitled
Abstract: No abstract text available
Text: 01E 3875081 G E SOLID STATE uptoeiectronic specifications _ HARRI S SEMI COND 3 7E SECTOR 43Q2571 » 0027134 Photon Coupled Isolator 4 N 2 5 -4 N 2 5 A -4 N 2 6 -4 N 2 7 -4 N 2 8 SYMBOL Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor
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43Q2571
92CS-42662
92CS-429S1
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PHOTOTRANSISTOR 3 LEGS
Abstract: military resistors catalog photoconductive cell cdse schematic retro reflective sensor "x-ray detector" VTR17D1 opamps catalog common cathode photodiode diodes catalog design opto interrupter
Text: Optoelectronics Lighting Imaging Telecom Sensors Detectors and Sensors Optoswitches, Optical Hybrids, and Custom Optical Assemblies Specialty Lighting Digital Imaging Telecom Sensors . . Optoswitches, optical hybrids, custom assemblies, photodiodes, phototransistors, IR
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D-65199
CA-275
PHOTOTRANSISTOR 3 LEGS
military resistors catalog
photoconductive cell cdse
schematic retro reflective sensor
"x-ray detector"
VTR17D1
opamps catalog
common cathode photodiode
diodes catalog
design opto interrupter
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Untitled
Abstract: No abstract text available
Text: 3875081 G E SOLID STATE 0 1E 19858 D Optoelectronic Specifications_ T - Í //- S 3 HARRIS SEMICOND SECTOR 37E D I M305571 Photon Coupled Isolator GEPS2001 0057350 ! M IL L IM E T E R S J O T M B Jkr M IN . ; M A X . Ga As Infrared Em itting Diode & NPN Silicon Photo-Transistor
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M305571
GEPS2001
GEPS2001
92CS-42662
92CS-429S1
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TRANSISTOR CD 2897
Abstract: GFH601 k 2897 transistor 340 opto isolator 100J1
Text: HARRIS SEMICOND MÊimmmmtiÈÊmâiiim SECTOR 37E D B 430SS71 DG2732b S E l HAS Optoelectronic Speciticatio n s. Photon Coupled Isolator GFH601 Ga As Solid State Lamp & NPN Silicon Photo-Transistor The G E Solid State GFH601 consists of a gallium arsenide infrared
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430SS71
DG2732b
GFH601
GFH601
92cs-42862
92cs-428m
TRANSISTOR CD 2897
k 2897 transistor
340 opto isolator
100J1
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Untitled
Abstract: No abstract text available
Text: HARRIS SEMICOND 3 7E SECTOR D 4305271 □0273G0 I HAS =1 Optoelectronic Specifications _ Photon Coupled Isolator CNY33 Ga A s Infrared Em itting D iode & N PN S ilicon High V o ltage Photo-Transistor The G E Solid State CNY33 is a gallium arsenide, infrared emitting
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0273G0
CNY33
CNY33
S-42662
S-429S1
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cq 838
Abstract: No abstract text available
Text: 3875081 G E SOLID STATE 01E 19818 D Optoelectronic Specifications_ HARRI S SEMICOND 3 7E SECTOR D 430E271 GG27SÔD 7 • T ^ y /- S 3 Photon Coupled Isolator CQY80 r. G a A s In fr a r e d E m ittin g D io d e & N P N S ilic o n P h o to -T r a n s is to r
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430E271
GG27SÃ
CQY80
S-429S
cq 838
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Untitled
Abstract: No abstract text available
Text: HARRIS SEMICOND SECTOR 37E 4302271 D 0027142 L> I HAS Optoelectronic Specifications_ T -V /-S 3 Photon Coupled Isolator4N38,4N38A MIN. 3 1« tTOPVIEWI 4 FEATURES: 2 6 ! s 1 - s y y u • Fast switching speeds , • High DC current transfer ratio • High isolation resistance
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Isolator4N38
4N38A
E51868
92CS-42662
92CS-429S1
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PHOTOTRANSISTOR 3 LEGS
Abstract: No abstract text available
Text: 3875 08 1 0 1 E 19776 G E SOLID STATE Optoelectronic Specifications - HARRIS SEMICOND SECTOR 37E D S 4302271 0G2723Ô fl • HAS Photon Coupled Isolator SL5511 The GE Solid State SL551I consists of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a dual-in-line package. The GE
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0G2723Ã
SL5511
SL551I
SL5511
C96-551
92CS-42662
92CS-428S1
PHOTOTRANSISTOR 3 LEGS
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Untitled
Abstract: No abstract text available
Text: 387 5 0 8 1 0 1E 19736 STATE G E SOLID Optoelectronic Specifications HARRIS SEMICOND SECTOR 37E D T'W-ZS B 4302271 0 D 2 ? n a 0 • HAS Photon Coupled Isolator H11G45-H11G46 Ga As Infrared E m itting D iode & N P N Silicon Darlington Connected Phototransistor
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H11G45-H11G46
S-42662
S-429S1
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robot circuit diagram free download
Abstract: No abstract text available
Text: Robotics with the Boe-Bot Student Guide VERSION 3.0 WARRANTY Parallax warrants its products against defects in materials and workmanship for a period of 90 days from receipt of product. If you discover a defect, Parallax will, at its option, repair or replace the merchandise, or refund the
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Untitled
Abstract: No abstract text available
Text: HA RR IS S E M I C O N D S E CT OR 4 3 D 2 2 7 1 D 0 S 7 3 Q S 2 • HAS 37E D Optoelectronic S p e c ific a tio n s _ T-4I-S3 AC Input Photon Coupled Isolator CNY35 — i.— -1 -j_ ■rtAA 3 1» 1 c ITOPV1EWI S 4 S \ G a A s Infared Em itting D iode s & N P N Silicon Photo-Transistor
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CNY35
CNY35
S-42662
92CS-429S1
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Untitled
Abstract: No abstract text available
Text: 3875081 G E SOLID STATE 01E 19826 D Optoelectronic Specifications. T-m-13 HARRIS SEMI COND SECTOR 37E D H 4302271 0027200 1 MHAS Photon Coupled Interrupter Module C N Y 28 T he G E Solid S tate CNY28 is a gallium arsenide infrared em itting diode coupled w ith a silicon p h o to tran sisto r in a plastic housing. T he
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T-m-13
CNY28
92CS-42662
92CS-429S1
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Untitled
Abstract: No abstract text available
Text: 3875081 G E S O L ID STATE 01E 19782 Optoelectronic Specifications_ HARRIS SE MI COND SECTOR 37E T> -r-M 1-7 3 I 4302271 0027244 3 HHAS 1m m Aperture Photon Coupled Interrupter Module H 21A 4,H 21A 5,H 21A 6 The GE Solid State H21A Interrupter Module is agallium arsenide
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92CS-42662
92CS-429S1
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Untitled
Abstract: No abstract text available
Text: -»wMtflggfcaA.«» sE r^ Y p tfn f.-^ a iir-r,- HARRIS SEMICOND SECTOR 37E D rr "irrriirT iaj-if! t , M302271 DGE7330 7 • HAS Optoelectronic Specifications_ T-m-ZS Photon Coupled Isolator MCA230, MCA231, MCA255 GaAs Infrared Emitting Diode & N’PN Silicon Darlington Connected Phototransistor
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M302271
DGE7330
MCA230,
MCA231,
MCA255
E51868
92CS-42662
92CS-429S1
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Untitled
Abstract: No abstract text available
Text: H A R R IS SEM IC O ND SECTOR 37E ]> 4302271 D02733Ö 1 B IH A S Optoelectronic Specifications. T -Hi-53 Photon Coupled Isolator MCT210 G aA s In fra re d E m ittin g Diode & NPN Silicon Photo-T ransistor The GE Solid State MCT210 is a gallium arsenide, infrared emitting
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D02733Ã
-Hi-53
MCT210
MCT210
E51868
92CS-42662
92CS-428S1
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Untitled
Abstract: No abstract text available
Text: 3875081 G E SO LID 01E STATE 1 9 8 10 D Optoelectronic Specifications_ HARRIS SEMICOND SECTOR 37E D H 4302271 0G27272 A E l HAS Photon Coupled Isolator H24B1-H24B2 Ga As Infrared Em itting Diode & NPN Silicon Photo-Darlington Amplifier The GE Solid State H24B series consists of a gallium arsenide
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0G27272
H24B1-H24B2
E51868
S-42662
92CS-429S1
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Untitled
Abstract: No abstract text available
Text: 3875081 G E SOLID STATE 0 1E 19772 Optoelectronic Specifications -T - W J - Î 3 HARRI S SEMI COND SECTOR 3 7E D • 4305571 0057534 0 ■ Photon Coupled Isolator SL5504 The GE Solid State SL5504 consists of a gallium arsenide infrared emitting
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SL5504
SL5504
C96-551
92CS-42662
92CS-429S1
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Omron H3BA
Abstract: smd transistor A6t omron relay 12VDC, IEC255 omron h3ba timer smd a6t double diode smd transistor A6a h3ba 5 pin relay 12vdc 4088 cross reference capillary rotary compressor RELAY OMRON LZN 203
Text: 2005 Components Catalogue Text 2005 Catalogue 1 Contents Welcome to the 2005 Omron Catalogue Section 1 – POWER RELAYS 8-9 10 - 168 Technical Information – Power & Signal Relays 10 - 31 Selection Guide 32 - 43 G5B 44 - 47 G5NB-E 48 - 51 G5SB 52 - 55 G6M
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S-164
OCB003
Omron H3BA
smd transistor A6t
omron relay 12VDC, IEC255
omron h3ba timer
smd a6t double diode
smd transistor A6a
h3ba
5 pin relay 12vdc 4088
cross reference capillary rotary compressor
RELAY OMRON LZN 203
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Untitled
Abstract: No abstract text available
Text: 3875081 G E SOLID STATE 01E 19802 Optoelectronic Sp e c ific atio n s_ H A R R IS SEMICOND S EC T O R 37E D 43G2271 Matched Emitter-Detector Pair H23B1 SYM T he G E Solid State H 23B 1 is a matched emitter-detector pair which consists o f a gallium arsenide, infrared emitting diode and a silicon,
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43G2271
H23B1
S-429S1
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Untitled
Abstract: No abstract text available
Text: 3875081 G E SOLID STATE 01E Optoelectronic Specifications- 19768 r-v/-& 3 HARRIS SEMICOND SECTOR 37E » • 4302271 QD2723Q 3 « H A S Photon Coupled Isolator SL5500 - SL5501 The GE Solid State SL5500 - SL5501 consists of a gallium arsenide infrared
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QD2723Q
SL5500
SL5501
SL5501
C96-551
speed02
92CS-42662
92CS-429S1
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PDF
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Untitled
Abstract: No abstract text available
Text: HARRIS SENICOND SECTOR 37E » 4305E71 005715b b • HAS O p to ele c tro n ic S p e c ific a tio n s -T ‘- V / 'Í 3 Photon Coupled Isolator H11A520-H11A550 -H11A5100. Ga As Infrared E m itting D iode & NPN Silicon Photo-T ransistor The G E Solid State H 11A520, H 11A550 and H 11A 5100 consist of a
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4305E71
005715b
H11A520-H11A550
-H11A5100.
11A520,
11A550
S-42662
92CS-429S1
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Untitled
Abstract: No abstract text available
Text: HARRIS SEMICOND SECTOR 37E î> 430E271 00 57 1 3 6 4 Optoelectronic Sp e c ific a tio n s_ IHAS T-m-33 Photon Coupled Isolator 4N35,4N36,4N37 Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State 4N35-4N36-4N37 are gallium arsenide
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430E271
T-m-33
4N35-4N36-4N37
E51868
S-42662
92CS-429S1
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