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    PHP3N20E Search Results

    PHP3N20E Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PHP3N20E Philips Semiconductors PowerMOS Transistor Original PDF
    PHP3N20E Toshiba Power MOSFETs Cross Reference Guide Original PDF

    PHP3N20E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    PHP3N20E

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance


    Original     		PDF O220AB PHP3N20E PHP3N20E

    Philips tea1090

    Abstract: tea1090 tea1402 pcf2705p philips TEA1090T SAA7321GP TDA2579A LMT 393 N TDA3653bq TEA5713
    Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-41 DATED JUNE 30, 1999 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION PHILIPS LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODES COMMENTS


    Original     		PDF DN-41 LO9585/WD LO9585 LO9700 OQ8845T/K3 OQ8868HP/K6 QFP47) X2G-BUK5R3-100B Philips tea1090 tea1090 tea1402 pcf2705p philips TEA1090T SAA7321GP TDA2579A LMT 393 N TDA3653bq TEA5713

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION PHP3N20E QUICK REFERENCE DATA SYM BO L N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable


    OCR Scan     		PDF PHP3N20E T022QAB

    buk7530-55

    Abstract: mosfet-n SOT166 TOPFET buk7530
    Text: SELECTION GUIDE Page TOPFETs 14 PowerMOS Transistors 16 Insulated Gate Bipolar Transistors 23 Philips Semiconductors TOPFETs VDS Selection Guide @ID FUSION O) (V) (A) Id w Pd (W) TYPE NUMBER TECHNOLOGY ENVELOPE 50 0.028 25 50 125 BUK106-50L TOPFET SOT263


    OCR Scan     		PDF 56-800A BUK446-800A BUK456-800B BUK446-800B BUK454-800A BUK444-800A BUK454-800B BUK444-800B BUK456-1000B BUK446-1000B buk7530-55 mosfet-n SOT166 TOPFET buk7530

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance


    OCR Scan     		PDF PHP3N20E T0220AB 00A/ns;

    T0-220AB

    Abstract: PHILIPS MOSFET igbt mosfet switch BUK866 4001z
    Text: Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Types added to the range since the last issue of data handbook SC13 1995 are shown in bold print, TYPE NUMBER TECHNOLOGY PACKAGE PAGE BUK100-50DL TOPFET T0220AB 38 BUK100-50GL TOPFET


    OCR Scan     		PDF BUK100-50DL BUK100-50GL BUK100-50GS BUK101-50DL BUK101-50GL BUK101-50GS BUK102-50DL BUK102-50GL BUK102-50GS BUK104-50L T0-220AB PHILIPS MOSFET igbt mosfet switch BUK866 4001z

    BUK444-200

    Abstract: 100a mosfet Philips Semiconductors Selection Guide BUK454-60H BUK108-50DL BUK102-50GL BUk2 BUK44 BUK9630-55 BUK9570-55
    Text: Philips Semiconductors TOPFETs Selection Guide VDs Rdsion lD Id V) (fl) (A) (A) Pd (W) TYPE NUMBER TECHNOLOGY ENVELOPE 50 0.028 25 50 125 BUK106-50L TOPFET 50 0.028 25 50 125 BUK106-50LP TOPFET SOT263-O1 50 0.028 25 50 125 BUK116-50L TOPFET SOT426 50


    OCR Scan     		PDF 7-800B BUK446-800B BUK454-800A BUK444-800A BUK454-800B BUK444-800B BUK456-1OOOB BUK446-1000B T0220AB OT186 BUK444-200 100a mosfet Philips Semiconductors Selection Guide BUK454-60H BUK108-50DL BUK102-50GL BUk2 BUK44 BUK9630-55 BUK9570-55

    837 mosfet

    Abstract: 912 MOSFET T0-220AB PHILIPS MOSFET igbt BUK108-50DL 50SP 200b mosfet MOSFET 1053 mosfet handbook
    Text: Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Types added to the range since the last issue of data handbook SC13 1995 are shown in bold print. TYPE NUMBER TECHNOLOGY PACKAGE BUK100-50DL TOPFET T0220AB PAGE 38 BUK100-50GL TOPFET


    OCR Scan     		PDF BUK100-50DL BUK100-50GL BUK100-50GS BUK101-50DL BUK101-50GL BUK101-50GS BUK102-50DL BUK102-50GL BUK102-50GS BUK104-50L 837 mosfet 912 MOSFET T0-220AB PHILIPS MOSFET igbt BUK108-50DL 50SP 200b mosfet MOSFET 1053 mosfet handbook

    BS107 spice

    Abstract: BS108 spice K9614 Philips Semiconductors Selection Guide BUK7535-55 K9514 PHD69N03LT bsh201 SFE 7.2 k75-10
    Text: Philips Semiconductors PowerMOS Transistors Selection guide POWERMOS SELECTION GUIDE Vos V RoS(ori) (Ohm) @Id (A) tamax (A) Pûmax (W) TYPE NUMBER TECHNOLOGY PACKAGE PAGE 25 0.01 25 75 142 PHB87N03LT L2 TrenchMOS N SOT404 1656 25 0.01 25 75 142 PHP87N03LT


    OCR Scan     		PDF PHB87N03LT PHP87N03LT PHB69N03LT PHD69N03LT PHP69N03LT PHB55N03LT PHD55N03LT PHP55N03LT PHB50N03LT PHP50N03LT BS107 spice BS108 spice K9614 Philips Semiconductors Selection Guide BUK7535-55 K9514 bsh201 SFE 7.2 k75-10

    PHC2300

    Abstract: BSH202 200B PHC20306 PHP45N03LT php18n20e BST100 PHT11N06LT PHN203 PHB50N03LT
    Text: Philips Semiconductors PowerMOS Transistors TYPE NUMBER PAGE Index TYPE NUMBER 2N7000 48 BSP110 2N7002 54 BSP120 PAGE TYPE NUMBER PAGE 203 BST84 358 208 BST86 364 BS107 60 BSP121 213 BUK100-50DL 385 BS107A 66 BSP122 219 BUK100-50GL 393 BS108 70 BSP126 221


    OCR Scan     		PDF 2N7000 2N7002 BS107 BS107A BS108 BS170 BS250 BSH101 BSH102 BSH103 PHC2300 BSH202 200B PHC20306 PHP45N03LT php18n20e BST100 PHT11N06LT PHN203 PHB50N03LT

    IPM tm 35

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION PARAMETER Drain-source voltage Drain current DC Total power dissipation Drain-source on-state résistance Id P to, R d S(ON) PIN CONFIGURATION MAX. UNIT 200 3.5 50 1.5 V


    OCR Scan     		PDF PHP3N20E T0220AB IPM tm 35