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Abstract: No abstract text available
Text: MUR1100 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current1.0 V(RRM)(V) Rep.Pk.Rev. Voltage1.0k t(rr) Max.(s) Rev.Rec. Time75n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage1.7 @I(FM) (A) (Test Condition)1.0
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MUR1100
Time75n
Current10u
Current600u
StyleDO-41
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Untitled
Abstract: No abstract text available
Text: MUR1100E Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current1.0 V(RRM)(V) Rep.Pk.Rev. Voltage1.0k t(rr) Max.(s) Rev.Rec. Time75n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage1.7
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MUR1100E
Time75n
Current10u
Current600u
StyleDO-41
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MR918
Abstract: MJ16006A PK MUR1100 AN952 IC 7403 p6302 MTP12N10 MTP8P10 MUR105 AM503
Text: MOTOROLA Order this document by MJH16006A/D SEMICONDUCTOR TECHNICAL DATA Designer's MJH16006A Data Sheet NPN Silicon Power Transistor 1 kV SWITCHMODE Series These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for
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MJH16006A/D
MJH16006A
MJH16006A/D*
MR918
MJ16006A
PK MUR1100
AN952
IC 7403
p6302
MTP12N10
MTP8P10
MUR105
AM503
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download MUR1100
Abstract: Bipolar Power Transistor Data MJ16018/cp4071 MJ16018/2SD218 equivalent MJW16018 MJ16018 MJE210 MTP12N10 MTP8P10 MUR105
Text: MOTOROLA Order this document by MJ16018/D SEMICONDUCTOR TECHNICAL DATA Designer's MJ16018* MJW16018 * Data Sheet NPN Silicon Power Transistors *Motorola Preferred Device 1.5 kV SWITCHMODE Series These transistors are designed for high–voltage, high–speed, power switching in
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MJ16018/D
MJ16018*
MJW16018
MJ16018/D*
download MUR1100
Bipolar Power Transistor Data
MJ16018/cp4071
MJ16018/2SD218 equivalent
MJW16018
MJ16018
MJE210
MTP12N10
MTP8P10
MUR105
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MTP12N10 pin configuration
Abstract: PK MUR1100 MTP12N10 MTP8P10 PD-135 IC 7403 IC 7403 datasheet mjw16010a AM503 MJE210
Text: MOTOROLA Order this document by MJW16010A/D SEMICONDUCTOR TECHNICAL DATA Designer's MJW16010A* Data Sheet NPN Silicon Power Transistors *Motorola Preferred Device 1 kV SWITCHMODE Series These transistors are designed for high–voltage, high–speed, power switching in
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MJW16010A/D
MJW16010A*
90nufacture
MJW16010A/D*
MTP12N10 pin configuration
PK MUR1100
MTP12N10
MTP8P10
PD-135
IC 7403
IC 7403 datasheet
mjw16010a
AM503
MJE210
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tc4500
Abstract: MJ16018
Text: ON Semiconductort MJ16018 * MJW16018 * NPN Silicon Power Transistors 1.5 kV SWITCHMODEt Series *Not Recommended for New Design These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are
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MJ16018
MJW16018
r14525
MJ16018/D
tc4500
MJ16018
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MR918
Abstract: MTP8P10 Motorola mr918 AM503 MJE210 MJH16006A MPF930 MTP12N10 MUR105 P6302
Text: MOTOROLA Order this document by MJH16006A/D SEMICONDUCTOR TECHNICAL DATA Designer's MJH16006A Data Sheet NPN Silicon Power Transistor 1 kV SWITCHMODE Series These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for
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MJH16006A/D
MJH16006A
MJH16006A/D*
MR918
MTP8P10
Motorola mr918
AM503
MJE210
MJH16006A
MPF930
MTP12N10
MUR105
P6302
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MR918
Abstract: MJ16006A MJH16006A tektronix 475 IC 7403 MTP8P10 AM503 MJE210 MPF930 MTP12N10
Text: ON Semiconductort NPN Silicon Power Transistor MJH16006A 1 kV SWITCHMODEt Series These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated SWITCHMODE applications.
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MJH16006A
r14525
MJH16006A/D
MR918
MJ16006A
MJH16006A
tektronix 475
IC 7403
MTP8P10
AM503
MJE210
MPF930
MTP12N10
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mjw16010a
Abstract: PK MUR1100 AM503 MJE210 MTP12N10 MTP8P10 MUR105 P6302
Text: ON Semiconductort NPN Silicon Power Transistors 1 kV SWITCHMODEt Series MJW16010A* *ON Semiconductor Preferred Device These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are
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MJW16010A*
r14525
MJW16010A/D
mjw16010a
PK MUR1100
AM503
MJE210
MTP12N10
MTP8P10
MUR105
P6302
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MTP12N10 pin configuration
Abstract: MTP12N10 P6302
Text: MOTOROLA Order this document by MJW16010A/D SEMICONDUCTOR TECHNICAL DATA Designer's MJW16010A* Data Sheet NPN Silicon Power Transistors *Motorola Preferred Device 1 kV SWITCHMODE Series These transistors are designed for high–voltage, high–speed, power switching in
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MJW16010A/D
MJW16010A/D*
MTP12N10 pin configuration
MTP12N10
P6302
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MTP12N10 pin configuration
Abstract: IRFD9123 MJ16110 IRFD113 equivalent MTP25N06 pk98 MJW16110 MTP12N10 mur47 MJ16010 DATASHEET
Text: MOTOROLA Order this document by MJ16110/D SEMICONDUCTOR TECHNICAL DATA Designer's MJ16110* MJW16110 * Data Sheet NPN Silicon Power Transistors *Motorola Preferred Device SWITCHMODE Bridge Series . . . specifically designed for use in half bridge and full bridge off line converters.
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MJ16110/D
MJ16110*
MJW16110
MJ16110/D*
MTP12N10 pin configuration
IRFD9123
MJ16110
IRFD113 equivalent
MTP25N06
pk98
MJW16110
MTP12N10
mur47
MJ16010 DATASHEET
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MJ16110
Abstract: MJW16110 IRFD9120 mtp25n06 MJE210 MTP12N10 MTP8P10 MUR105 MUR870
Text: ON Semiconductort MJ16110 * MJW16110 * NPN Silicon Power Transistors SWITCHMODEt Bridge Series *Not Recommended for New Design . . . specifically designed for use in half bridge and full bridge off line converters. • • • • • • • • POWER TRANSISTORS
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MJ16110
MJW16110
r14525
MJ16110/D
MJ16110
MJW16110
IRFD9120
mtp25n06
MJE210
MTP12N10
MTP8P10
MUR105
MUR870
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2n3055 motorola
Abstract: tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046
Text: Index and Cross Reference 1 Selector Guide 2 Data Sheets 3 Surface Mount Package Information and Tape and Reel Specifications 4 Outline Dimensions and Leadform Options 5 Applications Information 6 Thermal Clad is a trademark of the Bergquist Company. Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad,
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1PHX11122C
2n3055 motorola
tip122 tip127 audio amp schematic
transistor equivalent book 2sc2238
IR640
transistor motorola 40411
TRANSISTOR REPLACEMENT GUIDE
ir431
motorola AN485
C2688
2SA1046
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MJ11016 equivalent
Abstract: DIODE MOTOROLA 633 MTP12N10 pin configuration 726 MOTOROLA TRANSISTORS MJF16206 high voltage CRT transformer MC1391 MC1391P MJ11016 PK MUR1100
Text: MOTOROLA Order this document by MJW16206/D SEMICONDUCTOR TECHNICAL DATA MJW16206 SCANSWITCH NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors The MJF16206 and the MJW16206 are state–of–the–art SWITCHMODE bipolar
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MJW16206/D
MJW16206
MJF16206
MJW16206
MJW16206/D*
MJ11016 equivalent
DIODE MOTOROLA 633
MTP12N10 pin configuration
726 MOTOROLA TRANSISTORS
high voltage CRT transformer
MC1391
MC1391P
MJ11016
PK MUR1100
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2N5337
Abstract: 2N6191 MJF16206 MJW16206 MR856 MTP8P10 MUR8100 MUR8100E
Text: MOTOROLA Order this document by MJW16206/D SEMICONDUCTOR TECHNICAL DATA MJW16206 SCANSWITCH NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors The MJF16206 and the MJW16206 are state–of–the–art SWITCHMODE bipolar
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MJW16206/D
MJW16206
MJF16206
MJW16206
MJW16206/D*
2N5337
2N6191
MR856
MTP8P10
MUR8100
MUR8100E
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MDC1000A
Abstract: 1811P3C8 MDC1000 2N5337 2N6191 MJF16206 MJW16206 MR856 MTP8P10 MUR8100E
Text: ON Semiconductort MJW16206 SCANSWITCHt NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors POWER TRANSISTORS 12 AMPERES 1200 VOLTS — VCES 50 and 150 WATTS The MJF16206 and the MJW16206 are state–of–the–art SWITCHMODEt bipolar power transistors. They are specifically
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MJW16206
MJF16206
MJW16206
r14525
MJW16206/D
MDC1000A
1811P3C8
MDC1000
2N5337
2N6191
MR856
MTP8P10
MUR8100E
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marking diode axial
Abstract: Axial lead inductor marking
Text: MUR180E, MUR1100E MUR1100E is a Preferred Device SWITCHMODE Power Rectifiers Ultrafast “E” Series with High Reverse Energy Capability http://onsemi.com . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state−of−the−art devices have the
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MUR180E,
MUR1100E
MUR1100E
marking diode axial
Axial lead inductor marking
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mercury SWITCH
Abstract: pk mur1100e
Text: MUR180E, MUR1100E MUR1100E is a Preferred Device SWITCHMODE Power Rectifiers Ultrafast “E” Series with High Reverse Energy Capability http://onsemi.com . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state- of- the- art devices have the
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MUR180E,
MUR1100E
MUR1100E
mercury SWITCH
pk mur1100e
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PK MUR 1100E DIODE
Abstract: PK MUR 1100E DIODE MOTOROLA MUR1100e MUR 1100E DIODE diode 217 motorola
Text: MOTOROLA Order this document by MUR1100E/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power Rectifiers MUR1100E MUR180E Ultrafast “E’’ Series with High Reverse Energy Capability . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the
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MUR1100E/D
MUR1100E/D
PK MUR 1100E DIODE
PK MUR 1100E
DIODE MOTOROLA MUR1100e
MUR 1100E DIODE
diode 217 motorola
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MUR1100E
Abstract: MUR1100 mur180e MUR1100ERL MUR180ERL MUR8100E
Text: MUR180E, MUR1100E MUR1100E is a Preferred Device SWITCHMODE Power Rectifiers Ultrafast “E” Series with High Reverse Energy Capability http://onsemi.com . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the
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MUR180E,
MUR1100E
MUR1100E
r14525
MUR180E/D
MUR1100
mur180e
MUR1100ERL
MUR180ERL
MUR8100E
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PK MUR 1100E
Abstract: PK MUR 1100E DIODE U1100E 1100E MUR1100E MUR190E MUR8100E voltage rectifier diode motorola 190E
Text: MOTOROLA Order this document by MUR190E/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power Rectifiers MUR190E MUR1100E Ultrafast “E’’ Series with High Reverse Energy Capability . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the
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MUR190E/D
MUR190E
MUR1100E
MUR1100E
PK MUR 1100E
PK MUR 1100E DIODE
U1100E
1100E
MUR190E
MUR8100E
voltage rectifier diode motorola
190E
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PK MUR 1100E DIODE
Abstract: PK MUR 1100E DIODE MOTOROLA MUR1100e pk mur1100e voltage rectifier diode motorola
Text: MOTOROLA Order this document by MUR1100E/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power Rectifiers MUR1100E MUR180E Ultrafast “E’’ Series with High Reverse Energy Capability . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the
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MUR1100E/D
MUR1100E/D
PK MUR 1100E DIODE
PK MUR 1100E
DIODE MOTOROLA MUR1100e
pk mur1100e
voltage rectifier diode motorola
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P6302
Abstract: transistor equivalent table TL 3849 AN952
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJW16010A* Designer’s Data Sheet *M otoroii P rtfe rrtd D avtc* NPN Silicon Power Transistors 1 kV SWITCHMODE Series These transistors are designed for high-voltage, high-speed, power switching in inductive circuits w here fall tim e is critica l. They are p a rticu la rly suited for
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MJW16010A*
AN951)
MUR105
MUR1100
MUR405
MUR4100
AR131)
P6302
transistor equivalent table
TL 3849
AN952
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P8302
Abstract: 16006A c 3833 transistor c series transistor equivalent table transistor equivalent table 066AA MJh-16006A
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJH 16006A Designer’s Data Sheet NPN Silicon Power Transistor *Motorol« Pr*f*rr*d D«vtc« 1 kV SWITCHMODE Series These transistors are designed for high-voltage, high-speed, power switching In in d u c tiv e c irc u its w h e re fa ll tim e Is c ritic a l. T h e y a re p a rtic u la rly s u ite d fo r
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6006A
AN951)
MUR105
MUR1100
UR405
AR131)
P8302
16006A
c 3833 transistor
c series transistor equivalent table
transistor equivalent table
066AA
MJh-16006A
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