Untitled
Abstract: No abstract text available
Text: PowerCat C5E F/UTP Cable PVC TECHNICAL SPECIFICATIONS Features summary Molex Premise Networks PowerCat C5E 4 Pair F/UTP cable has been designed to support high speed data transmission systems. This cable is part of the PowerCat System range of products that have
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dB/100
f/100)
ns/100m
9A-504-FT
9A-504-FT#
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bcm 4330
Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Text: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?
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WRD-YKD-5W
Abstract: microdc
Text: WRD-YKD-5W Series 5W, WIDE INPUT ISOLATED & REGULATED TWIN OUTPUT DIP 24 DC-DC CONVERTER DIP24 PRODUCT PROGRAM Input Part 2:1 wide input voltage range ◆ Twin output ◆ Operating temperature: -40℃ to + 85℃ ◆ UL94-V0 package ◆ No external component required
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DIP24
DIP24
WRD120505YKD-5W
WRD120909YKD-5W
WRD121212YKD-5W
WRD121515YKD-5W
WRD122424YKD-5W
WRD240505YKD-5W
WRD240512YKD-5W
WRD-YKD-5W
microdc
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8n20
Abstract: 8n18 C-313 SEFP8N20 POWEC
Text: ; ^ m. SETHH82I •— :> »P8M 8 : i ,U v ; ^ A l* . : > m m s * • N-CHAWNEL POWER MOS TRANSISTORS H IG H S P E E D S W IT C H I N G A P P L I C A T I O N S V DSS R 0 8 <0W *o These products ore dWfusod multi-cell silicon gate N-Chonnel enhancement modo Powec-Mos field
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fPM18
SEFP8N20
80V/200V
20Kfl)
C-313
300duty
8n20
8n18
C-313
SEFP8N20
POWEC
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powec rm 1110
Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Text: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor
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111ii
MZ5558
Z5555,
Z5556,
MZ5557
powec rm 1110
rm 1100 powec
MPC1000
transistors JX 6822 A
inverter welder 4 schematic
SAA 14Z
transistor SI 6822
stg 8810
PL 15Z DIODE
germanium transistor
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IC 1691 AI CIRCUIT DIAGRAM
Abstract: 1691 AI 50/MSC 1691 A1
Text: 19-0208; Rev 2; 9/95 y k i y j x i v k i In te g ra te d pP Supervisor Module w ith Lithium B ackup B a tte ry _ G eneral D escription The internal +3V, 125mAh lithium battery connects to the |j P supervisory circuit through external pin strap
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125mAh
MAX1691
16-PIN
IC 1691 AI CIRCUIT DIAGRAM
1691 AI
50/MSC 1691 A1
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Untitled
Abstract: No abstract text available
Text: cP IITSU May 1997 Revision 0.3 data sheet GOB512UV6431 A -(67/84/100/125)Q-S 4 MByte (512Kx 64) CMOS Synchronous Graphic Module General Description The GOB512llV6431(A)-(67/84/100/125)Q-S is a high performance, 4-megabtye synchronous, graphic RAM module organized
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GOB512UV6431
512Kx
GOB512llV6431
144-pin,
G83222-
256Kx32
GOB512UV6431
GOB512UV6431A
Q02327Ã
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29L510
Abstract: l510 L510B Am29510/L510
Text: Am29510/L510 Am29510/L510 16 X 16 M ultiplier A ccum ulator DISTINCTIVE CHARACTERISTICS Uses tw o 's com plem ent or unsigned inputs and Round control Output register preload 35-bit product accum ulator result - 32-bit product - 3-bit extended product IM O X processing
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Am29510/L510
35-bit
32-bit
110ns
16-bit
03563B
29L510
l510
L510B
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Z84 D
Abstract: z80pio Z80CPU Ates
Text: PRELIMINARY PRODUCT SPECIFICATION ¿ £ Z iIß G Z 8 4 0 1 3 /0 1 5 Z 8 4 C 1 3 /Z 8 4 C 1 5 IPC I n t e l l ig e n t P e r ip h e r a l C o n t r o l l e r FEATURES * Z84C00 Z80 CPU with Z84C30 CTC, Z84C4X SIO. CGC, Watch Dog Timer WDT . In addition, Z84C15
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Z84C00
Z84C30
Z84C4X
Z84C15
Z84015
Z84C20
84-pin
Z84013
100-pin
Z84 D
z80pio
Z80CPU Ates
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Untitled
Abstract: No abstract text available
Text: fax id: 1030 CY7C199 32K x 8 Static RAM Features • Highspeed — 10 ns • Fast tpoE • CMOS for optimum speed/power • Low active power — 467 mW max, 12 ns “L” version • Low standby power — 0.275 mW (max, “L” version) • 2V data retention (“L” version only)
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CY7C199
CY7C199
300-mil-wide
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DH0034
Abstract: No abstract text available
Text: ELANTEC INC TÔ 3129557 ELANTEC Î>Ë| BISTSS? ODOGS3D 1 INC 98 D 0 0 5 3 0 HIGH PERFORMANCE ANALOG INTEGRATED CIRCUITS 9 S 3 -31 ÏQ033C . Fast Bu/f^K Amplifier Features General Description • • • • • • The ELH0033 is a high-spefed, E Ë ^n p ^ ^o ltag M o llo w er/b u ffer
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Q033C
ELH0033
500V/ps
100mA
100MHz
MIL-STD-883
ELH0033,
ELH0033/ELH0033C
DH0034
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ASP-105884-01
Abstract: 13002 hj B1 PA66-GF13 5mm ldr ASP-105885-01 mj 13003 IRF 3055 DIN 16901 130 plastic PCI x1 express PCB dimensions artwork Training TV repair
Text: CONTENTS Board-to-Board Applications Fin al Inch P C B D esign T o o ls . 10-11 High S p eed Board-to-Board S y s te m s .12-27 M icro Pitch Board-to-Board S y s t e m s .28-37
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Series09
ASP-105884-01
13002 hj B1
PA66-GF13
5mm ldr
ASP-105885-01
mj 13003
IRF 3055
DIN 16901 130 plastic
PCI x1 express PCB dimensions artwork
Training TV repair
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Untitled
Abstract: No abstract text available
Text: EL2005/EL2005C ELANTEC INC % HIGH PERFORMANCE ANALOG INTEGRATED CIRCUITS DeJ BIETSS? • Low input current—50 pA • Low offset &drift— 2mV/25fiV/°C • High slew rate—1500V/jiS • F&st rise &fall time—2.5ns • High input resistance1000GQ • Bandwidth—140MHz
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EL2005/EL2005C
2mV/25fiV/Â
500V/jiS
resistance1000GQ
140MHz
ELH0033
MHrSTD-883
EL2005CG
MDP0002
EL2005CG/E+
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powec
Abstract: No abstract text available
Text: KM41C4000C, KM41V4000C CMOS DRAM 4M x 1 Bit CM OS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access
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KM41C4000C,
KM41V4000C
1024cycles
powec
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