Untitled
Abstract: No abstract text available
Text: 2N2102 • 2N4036 COMPLEMEMTARY SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES 1 THE 2N210? NPN AND 2N4056(PNP) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF MEDIUM POWER DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCHING APPLICATIONS. C E B
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2N2102
2N4036
2N210?
2N4056
2N21Q2
150mA
150mA
8100B
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transistor NEC D 582
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE1280 SERIES K-BAND MEDIUM POWER AMPLIFIE N-CHANNEL HJ-FET CHIPS DESCRIPTION CHIP DIMENSIONS unit: firn The NE1280 series is medium power HJ-FET chips which offer high output power and high gain for telecom
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NE1280
NE1280100
NE1280200
NE1280400
transistor NEC D 582
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2SC1600
Abstract: NE57510 NE57500 ne575 2SC1042 2SC1642 NE57520 321E S21E 2SC164
Text: NEC/ CALIFORNIA NEC SbE D b4S7414 00053^^ 4TS * N E C C T ^ - o s NE57500 NE57510 NE57520 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • HIGH OSCILLATOR POWER OUTPUT: 700 m W at 1.7 GHz The NE575 series of NPN silicon medium power transistors is
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b4S7414
NE57500
NE57510
NE57520
NE575
2SC1600
2SC1042
2SC1642
NE57520
321E
S21E
2SC164
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Untitled
Abstract: No abstract text available
Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise,
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NESG2101M16
NESG2101M16
PU10395EJ03V0DS
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Untitled
Abstract: No abstract text available
Text: m 2N3740 \ \ SILICON PNP MEDIUM POWER TRANSISTOR DESCRIPTION: The 2N3740 is a Medium Power Transistor for General Purpose Amplifier and Switching Applications. PACKAGE STYLE T O -66 MAXIMUM RATINGS 4.0 lc VcEO -60 V P diss 25 W @ Tc = 25 °C Tj -65 to +200 °C
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2N3740
2N3740
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transistor T1J
Abstract: NESG2101M05-A transistor T1J 4pin M05 MARKING
Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M05 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise,
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NESG2101M05
NESG2101M05-A
NESG2101M05-TERISTICS
PU10190EJ02V0DS
transistor T1J
transistor T1J 4pin
M05 MARKING
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pnp for 2n3019
Abstract: No abstract text available
Text: r ! / 2N3019 2N3020 NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES -A 1 S& THE 2N3019, 2N3020 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR AF MEDIUM POWER DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCH ING APPLICATIONS UP TO 1 AMPERE. THEY ARE COMPLEMENTARY TO THE PNP 2N4033, 2N4031.
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2N3019
2N3020
2N3019,
2N3020
2N4033,
2N4031.
800mW
200OC
150mA
VCE-10V
pnp for 2n3019
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morocco tip32c
Abstract: TIP32C malaysia tip32c TIP31c PNP Transistor st 393 JESD97 TIP31C
Text: TIP32C Power transistor Applications • . Linear and swithing industrial equipment Description The TIP32C is a silicon Epitaxial-base PNP power transistor in Jedec TO-220 plastic package. It is intented for use in medium power linear and switching applications.
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TIP32C
TIP32C
O-220
O-220
TIP31C.
morocco tip32c
malaysia tip32c
TIP31c PNP Transistor
st 393
JESD97
TIP31C
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Untitled
Abstract: No abstract text available
Text: 2N3107 z * ’“ - th ro u g h 2N3110 NPN SILICON AP MEDIUM POWER AMPLIFIERS & SWITCHES ¥ X ''«SS« »W v. I CASE TO-39 THE 2N3107 THROUGH 2N3110 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR AF MEDIUM POWER DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCHING APPLICATIONS
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2N3107
2N3110
2N3107
2N3110
2N4032,
2N4030.
2N3109
800mW
150mA
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2SD864K
Abstract: 2SB765K
Text: SavantIC Semiconductor Product Specification 2SB765K Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·DARLINGTON ·High DC current gain ·Complement to type 2SD864K APPLICATIONS ·For medium speed and power switching Applications PINNING
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2SB765K
O-220C
2SD864K
-30mA
-120V,
-100V;
2SD864K
2SB765K
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Untitled
Abstract: No abstract text available
Text: m 2N3741 \ \ SILICON PNP MEDIUM POWER TRANSISTOR DESCRIPTION: The 2N3741 is a Medium Power Transistor for General Purpose Amplifier and Switching Applications. PACKAGE STYLE T O -66 MAXIMUM RATINGS INCHES A 6 C D E F G H J K L M 4.0 A lc O m < -80 V 25 W @ Tc = 25 °C
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2N3741
2N3741
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2N6476
Abstract: 2N6475
Text: Inchange Semiconductor Product Specification 2N6475 2N6476 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Low collector saturation voltage ·Excellent safe operating area APPLICATIONS ·General-purpose medium power for switching and amplifier applications
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2N6475
2N6476
O-220
O-220)
2N6475
-120V
2N6476
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2N5293
Abstract: 2N5295 2N5297
Text: Product Specification www.jmnic.com 2N5293 2N5295 2N5297 Silicon NPN Power Transistors DESCRIPTION ・・With TO-220 package ・High power dissipation APPLICATIONS ・Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION 1 Base 2
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2N5293
2N5295
2N5297
O-220
2N5293
2N5295
2N5297
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NTE197
Abstract: NTE196
Text: NTE196 NPN & NTE197 (PNP) Silicon Complementary Transistors Audio Power Output and Medium Power Switching Description: The NTE196 (NPN) and NTE197 (PNP) are silicon complementary transistors in a TO220 type package designed for use in general purpose amplifier and switching applications.
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NTE196
NTE197
500mA
NTE196)
10MHz
NTE197)
500mA,
NTE197
NTE196
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BD435
Abstract: ic 435 BD433 BD437
Text: Inchange Semiconductor Product Specification BD433/435/437 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type BD434/436/438 APPLICATIONS ・For medium power linear and switching applications PINNING PIN DESCRIPTION 1
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BD433/435/437
O-126
BD434/436/438
BD433
BD435
BD437
BD435
ic 435
BD433
BD437
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RX1214B130Y
Abstract: RX1214B80W
Text: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B80W; RX1214B130Y NPN microwave power transistors Product specification Supersedes data of November 1994 1997 Feb 14 Philips Semiconductors Product specification NPN microwave power transistors FEATURES • Suitable for short and medium
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RX1214B80W;
RX1214B130Y
SCA53
127147/00/02/pp12
RX1214B130Y
RX1214B80W
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2N5190
Abstract: 2N5191 2N5192 2N5193
Text: SavantIC Semiconductor Product Specification 2N5190 2N5191 2N5192 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2N5193/5194/5195 ·Excellent safe operating area APPLICATIONS ·For use in medium power linear and switching applications
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2N5190
2N5191
2N5192
O-126
2N5193/5194/5195
2N5190
2N5191
2N5192
2N5193
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2N5193
Abstract: 2N5195 2N5194 2N5190 VCE60V
Text: SavantIC Semiconductor Product Specification 2N5193 2N5194 2N5195 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2N5190/5191/5192 ·Excellent safe operating area APPLICATIONS ·For use in medium power linear and switching applications
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2N5193
2N5194
2N5195
O-126
2N5190/5191/5192
2N5193
2N5194
2N5195
2N5190
VCE60V
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Untitled
Abstract: No abstract text available
Text: m 2N6044 \ \ SILICON NPN-DARLINGTON POWER TRANSISTOR DESCRIPTION: The 2N6044 Darlington Transistor is Designed for General Purpose Medium Power Amplifier and Switching Applications. PACKAGE STYLE TO-220AB DIMENSIONS mm MAXIMUM RATINGS 120 mA Ib 0JC 10 15.2
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2N6044
2N6044
O-220AB
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Untitled
Abstract: No abstract text available
Text: Medium power transistor 60V, 0.5A 2SA2090 Features 1) High speed switching. (Tf : Typ. : 35ns at IC = 500mA) 2) Low saturation voltage, typically. (Typ. : 150mV at IC = 100mA, IB = 10mA) 3) Strong discharge power for inductive load and
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2SA2090
500mA)
150mV
100mA,
2SC5868.
R1120A
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MJE371
Abstract: MJE521 TO-225AA MJE-371
Text: ON Semiconductor MJE371 Plastic Medium-Power PNP Silicon Transistors 4 AMPERE POWER TRANSISTOR PNP SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 20 Watt audio amplifiers
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MJE371
MJE371
MJE521
r14525
MJE371/D
MJE521
TO-225AA
MJE-371
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30D16
Abstract: NCP1230D100R2G MC33262 NCP1230D65R2G 751U JESD78 NCP1230 NCP1230D165R2G NCP1230D65R2 zener spice model
Text: NCP1230 Low−Standby Power High Performance PWM Controller The NCP1230 represents a major leap towards achieving low standby power in medium−to−high power Switched−Mode Power Supplies such as notebook adapters, off−line battery chargers and consumer electronics equipment. Housed in a compact 8−pin package
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NCP1230
NCP1230
NCP1230/D
30D16
NCP1230D100R2G
MC33262
NCP1230D65R2G
751U
JESD78
NCP1230D165R2G
NCP1230D65R2
zener spice model
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PSA56
Abstract: No abstract text available
Text: TOSHIBA MPSA55,56 Transistor Silicon PNP Epitaxial Type Designed For Use as Medium-Power Driver and Low-Power Outputs Features • High Collector-Emitter Breakdown Voltage - BV c b o = -60Vdc Min. @ lc =-1 .OmAdc M PSA55 -80Vdc (Min.) @ lc = 1 .OmAdc M PSA56
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MPSA55
-60Vdc
PSA55
-80Vdc
PSA56
25Vdc
100mAdc,
PSA05,
PSA55
PSA56
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NTE16007
Abstract: NTE160 TO8 package
Text: NTE16007 Silicon NPN Transistor General Purpose for Medium Power Applications Description: The NTE16007 is a silicon NPN diffused-junction power transistor in a TO8 type package intended for a wide variety of applications in industrial and military equipment. This device is particularly useful
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NTE16007
NTE16007
100kHz
NTE160
TO8 package
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