LDMOS
Abstract: LDMOS digital bipolar junction transistor "RF Power Transistors" mosfet high power rf ldmos AN1223 amplitude modulation applications
Text: AN1223 Application note RF power transistors: comparative study of LDMOS versus bipolar technology Introduction RF power transistors consist of two type of devices: Bipolar Junction BJT and Field Effect (FET). Due to differences in technology, the bipolar junction transistor yields superior
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AN1223
LDMOS
LDMOS digital
bipolar junction transistor
"RF Power Transistors"
mosfet high power rf ldmos
AN1223
amplitude modulation applications
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amplitude modulation applications
Abstract: LDMOS AN1223
Text: AN1223 APPLICATION NOTE RF POWER TRANSISTORS: COMPARATIVE STUDY OF LDMOS VERSUS BIPOLAR TECHNOLOGY Serge Juhel 1. ABSTRACT RF power transistors consist of two type of devices: Bipolar Junction BJT and Field Effect (FET). Due to differences in technology, the bipolar junction transistor will yield superior performance for certain
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AN1223
amplitude modulation applications
LDMOS
AN1223
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mosfet high power rf ldmos
Abstract: Bipolar Junction Transistor AN1223 RF MOSFET CLASS AB
Text: AN1223 APPLICATION NOTE RF POWER TRANSISTORS: COMPARATIVE STUDY OF LDMOS VERSUS BIPOLAR TECHNOLOGY Serge Juhel 1. ABSTRACT RF power transistors consist of two type of devices: Bipolar Junction BJT and Field Effect (FET). Due to differences in technology, the bipolar junction transistor will yield superior performance for certain
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AN1223
mosfet high power rf ldmos
Bipolar Junction Transistor
AN1223
RF MOSFET CLASS AB
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GT30F131
Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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SCE0004L
TTC4116*
2SC4118
TTA1586*
2SA1588
2SC4117
2SA1587
2SC5233
2SC4738
2SA1832
GT30F131
GT30F124
TK18A60V
smd m5 transistor 6-pin
SMD TRANSISTOR H2A NPN
GT50N322
MARKING SMD PNP TRANSISTOR h2a
GT30J124
*30f124
TPCP8R01
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GT30J124
Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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SCE0004I
SC-43)
2SC1815
GT30J124
smd transistor h2a
gt45f122
TPCP8R01
GT30F123
2sc1815 smd type
smd marking 8L01
h2a smd
2SC5471
2sc5200 amplifiers circuit diagram
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GT30F124
Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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2010/9SCE0004K
SC-43)
2SC1815
700the
GT30F124
TPCP8R01
GT30J124
JAPANESE 2SC TRANSISTOR 2010
smd transistor h2a
smd marking 8L01
tk25e06k3
GT45F122
gt30g124
GT30F123
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bipolar junction transistor
Abstract: FZT953 DZT3150 DZT853 DZT953 Bipolar Junction Transistor npn DZT851 DZT951 NPN medium power transistor in a SOT package 100V transistor npn 5a
Text: New Product Announcement February 23, 2007 Announcing Medium Power SOT-223 Bipolar Junction Transistor Product Line Product Highlights DZT851, DZT853, DZT951, DZT953 • Single Transistors in SOT-223 Package • Highest Collector Current Rating Among Diodes, Inc.’s Bipolar Junction Transistor Product
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OT-223
DZT851,
DZT853,
DZT951,
DZT953
OT-223
DZT851
DZT951
DZT853
bipolar junction transistor
FZT953
DZT3150
DZT853
DZT953
Bipolar Junction Transistor npn
DZT851
DZT951
NPN medium power transistor in a SOT package
100V transistor npn 5a
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BU931 ST
Abstract: BU931P BU931 bu931 equivalent BU931T
Text: BU931 BU931P, BU931T High voltage ignition coil driver NPN power Darlington transistors Features • Very rugged Bipolar technology ■ High operating junction temperature ■ Wide range of packages TAB TAB Application ■ 1 2 2 The devices are bipolar Darlington transistors
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BU931
BU931P,
BU931T
O-247
O-220
BU931 ST
BU931P
BU931
bu931 equivalent
BU931T
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BU931P
Abstract: BU931 BU931T JESD97
Text: BU931 BU931P, BU931T High voltage ignition coil driver NPN power Darlington transistors Features • Very rugged Bipolar technology ■ High operating junction temperature ■ Wide range of packages Applications ■ 1 2 2 1 TO-247 Description The devices are bipolar Darlington transistors
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BU931
BU931P,
BU931T
O-247
O-220
BU931P
BU931
BU931T
JESD97
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BU931
Abstract: BU931P BU931T JESD97 W313 High voltage ignition coil driver NPN POWER DARLINGTON TRANSISTORS
Text: BU931 BU931P, BU931T High voltage ignition coil driver NPN power Darlington transistors Features • Very rugged Bipolar technology ■ High operating junction temperature ■ Wide range of packages Applications ■ 1 2 2 1 TO-247 Description The devices are bipolar Darlington transistors
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BU931
BU931P,
BU931T
O-247
O-220
JESD97.
BU931
BU931P
BU931T
JESD97
W313
High voltage ignition coil driver
NPN POWER DARLINGTON TRANSISTORS
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Untitled
Abstract: No abstract text available
Text: BCP5316Q 80V PNP MEDIUM POWER TRANSISTORS IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Medium Power Switching or Amplification Applications
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BCP5316Q
OT223
-500mV
BCP5616Q
DS36980
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Untitled
Abstract: No abstract text available
Text: BCP5616Q 80V NPN MEDIUM POWER TRANSISTORS IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Medium Power Switching or Amplification Applications
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BCP5616Q
OT223
500mV
BCP5316Q
DS36981
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Untitled
Abstract: No abstract text available
Text: BCP5316Q 80V PNP MEDIUM POWER TRANSISTORS IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the • Medium Power Switching or Amplification Applications stringent requirements of Automotive Applications. •
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BCP5316Q
OT223
-500mV
BCP5616Q
DS36980
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reverse-conducting thyristor
Abstract: gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor
Text: I Power Electronic Devices 1 Power Electronics Kaushik Rajashekara, Sohail Anwar, Vrej Barkhordarian, Alex Q. Huang Overview • Diodes • Schottky Diodes • Thyristors • Power Bipolar Junction Transistors • MOSFETs • General Power Semiconductor Switch Requirements • Gate
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MCT00,
reverse-conducting thyristor
gto Gate Drive circuit
IGCT thyristor
IGCT mitsubishi
Usha Rectifier
Emitter Turn-Off thyristor
eto thyristor
GTO triac
HEXFET Power MOSFET designer manual
MOS-Controlled Thyristor
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BUT30
Abstract: No abstract text available
Text: SGS-THOMSON BUT30V NPN TRANSISTOR POWER MODULE > HIGH CURRENT POWER BIPOLAR MODULE > VERY LOW Rih JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS • ISOLATED CASE 2500V RMS . EASY TO MOUNT ■ LOW INTERNAL PARASITIC INDUCTANCE 4 INDUSTRIAL APPLICATIONS:
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BUT30V
SC04830
BUT30
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fast diodes 400 v
Abstract: BUT232V BUT23
Text: BUT232V NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS:
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BUT232V
fast diodes 400 v
BUT232V
BUT23
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Untitled
Abstract: No abstract text available
Text: £ = T SGS-THOMSON NPN TRANSISTOR POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW R,h JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ISOLATED CASE 2500V RMS . EASY TO MOUNT . LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS: . MOTOR CONTROL
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BUT32V
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BUV98AV
Abstract: No abstract text available
Text: £ = T SGS-THOMSON NPN TRANSISTOR POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW R,h JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ISOLATED CASE 2500V RMS . EASY TO MOUNT . LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS: . MOTOR CONTROL
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BUV98AV
BUV98AV
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BUT23
Abstract: No abstract text available
Text: BUT232V NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS:
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BUT232V
BUT23
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BUV298AV
Abstract: No abstract text available
Text: BUV298AV NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS:
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BUV298AV
BUV298AV
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BUV98AV
Abstract: No abstract text available
Text: BUV98AV NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS:
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BUV98AV
BUV98AV
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD BU931Z NPN SILICON TRANSISTOR NPN POWER DARLINGTON FEATURES * High Operating Junction Temperature * High Voltage Ignition Coil Driver * Very Rugged Bipolar Technology INTERNAL SCHEMATIC DIAGRAM ORDERING INFORMATION
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BU931Z
BU931ZL-TA3-T
BU931ZG-TA3-T
BU931ZL-T3P-T
BU931ZG-T3P-T
O-220
QW-R214-015
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welding rectifier schematic
Abstract: schematic diagram UPS SMPS 30 smps circuit diagram BUV298AV
Text: BUV298AV NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS INSULATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS:
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BUV298AV
welding rectifier schematic
schematic diagram UPS
SMPS 30
smps circuit diagram
BUV298AV
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BUT32V
Abstract: SMPS IC 2003 BUT32
Text: BUT32V NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS FULLY INSULATED PACKAGE U.L. COMPLIANT FOR EASY MOUNTING LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS:
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BUT32V
BUT32V
SMPS IC 2003
BUT32
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