Untitled
Abstract: No abstract text available
Text: 2N6388 SILICON NPN POWER DARLINGTON TRANSISTOR • STMicroelectronics PREFERRED SALESTYPE . NPN DARLINGTON . HIGH CURRENT CAPABILITY . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The device is a silicon epitaxial-base NPN power transistor in monolithic Darlington configuration
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2N6388
O-220
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2N6388
Abstract: No abstract text available
Text: 2N6388 SILICON NPN POWER DARLINGTON TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON HIGH CURRENT CAPABILITY INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The device is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration
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2N6388
O-220
O-220
P011C
2N6388
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2N6388
Abstract: No abstract text available
Text: 2N6388 SILICON NPN POWER DARLINGTON TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON HIGH CURRENT CAPABILITY INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The device is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration
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2N6388
O-220
O-220
2N6388
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TIP147T
Abstract: tip142t
Text: TIP142T TIP147T COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n n n n n SGS-THOMSON PREFERRED SALESTYPES MONOLITHIC DARLINGTON CONFIGURATION LOW VOLTAGE HIGH CURRENT HIGH GAIN DESCRIPTION The TIP142T is a silicon epitaxial-base NPN power transistors in monolithic Darlington
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TIP142T
TIP147T
O-220
TIP147T.
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TIP147T
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2N6388
Abstract: No abstract text available
Text: 2N6388 SILICON NPN POWER DARLINGTON TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON HIGH CURRENT CAPABILITY INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The device is a silicon epitaxial-base NPN power transistor in monolithic Darlington configuration
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2N6388
O-220
O-220
2N6388
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2N6388
Abstract: No abstract text available
Text: 2N6388 SILICON NPN POWER DARLINGTON TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON HIGH CURRENT CAPABILITY INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The device is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration
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2N6388
O-220
O-220
2N6388
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TIP147T
Abstract: TIP142T
Text: TIP142T TIP147T COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPES MONOLITHIC DARLINGTON CONFIGURATION LOW VOLTAGE HIGH CURRENT HIGH GAIN DESCRIPTION The TIP142T is a silicon epitaxial-base NPN power transistors in monolithic Darlington
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TIP142T
TIP147T
TIP142T
O-220
TIP147T.
O-220
TIP147T
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BU323Z
Abstract: free ic 555 BU323Z-D transistor ignition circuit
Text: ON Semiconductort BU323Z NPN Silicon Power Darlington High Voltage Autoprotected AUTOPROTECTED DARLINGTON 10 AMPERES 360 −450 VOLTS CLAMP 150 WATTS The BU323Z is a planar, monolithic, high−voltage power Darlington with a built−in active zener clamping circuit. This device is
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BU323Z
BU323Z
BU323Z/D
free ic 555
BU323Z-D
transistor ignition circuit
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BU323Z
Abstract: No abstract text available
Text: ON Semiconductort BU323Z NPN Silicon Power Darlington High Voltage Autoprotected AUTOPROTECTED DARLINGTON 10 AMPERES 360 −450 VOLTS CLAMP 150 WATTS The BU323Z is a planar, monolithic, high−voltage power Darlington with a built−in active zener clamping circuit. This device is
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BU323Z
BU323Z
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BU323Z
Abstract: HIGH ENERGY IGNITION CIRCUIT darlington transistor with built-in temperature c
Text: ON Semiconductort BU323Z NPN Silicon Power Darlington High Voltage Autoprotected AUTOPROTECTED DARLINGTON 10 AMPERES 360–450 VOLTS CLAMP 150 WATTS The BU323Z is a planar, monolithic, high–voltage power Darlington with a built–in active zener clamping circuit. This device is
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BU323Z
BU323Z
r14525
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HIGH ENERGY IGNITION CIRCUIT
darlington transistor with built-in temperature c
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pin diagram of ic 4066
Abstract: ic tc 4066 diagram MJ11015 darlington complementary 120v npn darlington transistor 200 watts MJ11016 MJ11015-11016 11016 Darlington npn 2 amp 60 amp npn darlington power transistors
Text: MJ11015, 11016 Darlington Power Transistors Complementary Silicon Power Darlington Transistors are designed for use as output devices in complementary general purpose amplifier applications. Features: • High Gain Darlington performance. • High DC Current Gain hFE = 1000 Minimum at IC = 20A.
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MJ11015,
MJ11015
MJ11016
pin diagram of ic 4066
ic tc 4066 diagram
MJ11015
darlington complementary 120v
npn darlington transistor 200 watts
MJ11016
MJ11015-11016
11016
Darlington npn 2 amp
60 amp npn darlington power transistors
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BU323Z
Abstract: No abstract text available
Text: ON Semiconductort BU323Z NPN Silicon Power Darlington High Voltage Autoprotected AUTOPROTECTED DARLINGTON 10 AMPERES 360–450 VOLTS CLAMP 150 WATTS The BU323Z is a planar, monolithic, high–voltage power Darlington with a built–in active zener clamping circuit. This device is
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BU323Z
BU323Z
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BU323Z/D
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RBE 215 RELAY
Abstract: bu323z
Text: ON Semiconductort BU323Z NPN Silicon Power Darlington High Voltage Autoprotected AUTOPROTECTED DARLINGTON 10 AMPERES 360 −450 VOLTS CLAMP 150 WATTS The BU323Z is a planar, monolithic, high−voltage power Darlington with a built−in active zener clamping circuit. This device is
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BU323Z
RBE 215 RELAY
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MJ10009
Abstract: 1N4937 2N3762 MTP3055E
Text: ON Semiconductort MJ10009 * SWITCHMODEt Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *ON Semiconductor Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 450 and 500 VOLTS 175 WATTS The MJ10009 Darlington transistor is designed for high–voltage,
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MJ10009
MJ10009
r14525
MJ10009/D
1N4937
2N3762
MTP3055E
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MJE802
Abstract: No abstract text available
Text: MJE802 SILICON NPN POWER DARLINGTON TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON APPLICATIONS GENERAL PURPOSE SWITCHING ■ DESCRIPTION The MJE802 is a silicon Epitaxial-Base NPN transistor in monolithic Darlington configuration,
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MJE802
OT-32
OT-32
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON iMiniSiRitaignigfafiRiOBinieg MJE802 SILICON NPN POWER DARLINGTON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN DARLINGTON APPLICATIONS . GENERAL PURPOSE SWITCHING DESCRIPTION The MJE802 is a silicon epitaxial-base NPN transistor in monolithic Darlington configuration
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MJE802
MJE802
OT-32
GC73280
OT-32
O-126)
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Untitled
Abstract: No abstract text available
Text: TIP142T TIP147T Complementary power Darlington transistors Features • Monolithic Darlington configuration ■ Integrated antiparallel collector-emitter diode TAB Application ■ Linear and switching industrial equipment 1 Description Figure 1. Internal schematic diagrams
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON SGS125 SILICON PNP POWER DARLINGTON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . PNP DARLINGTON . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION . GENERAL PURPOSE SWITCHING DESCRIPTION The SGS125 is a silicon epitaxial-base PNP transistor in monolithic Darlington configuration in
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SGS125
SGS125
OT-82
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TIP132
Abstract: TIP131G TIP131 TIP132G TIP137 TIP137G
Text: TIP131, TIP132 NPN , TIP137 (PNP) Preferred Devices Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low−speed switching applications. http://onsemi.com Features DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
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TIP131,
TIP132
TIP137
TIP131
TIP132,
TIP131/D
TIP132
TIP131G
TIP131
TIP132G
TIP137
TIP137G
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SILICON COMPLEMENTARY transistors darlington
Abstract: darlington complementary power amplifier TO-220 AYWW marking code IC DARLINGTON MANUAL tip131 schematic diagram 800 watt power amplifier TIP137G TIP131G TIP132
Text: TIP131, TIP132 NPN , TIP137 (PNP) Preferred Devices Darlington Complementary Silicon Power Transistors Designed for general-purpose amplifier and low-speed switching applications. http://onsemi.com Features DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
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TIP131,
TIP132
TIP137
TIP131
TIP132,
O-220AB
TIP131/D
SILICON COMPLEMENTARY transistors darlington
darlington complementary power amplifier
TO-220
AYWW marking code IC
DARLINGTON MANUAL
tip131
schematic diagram 800 watt power amplifier
TIP137G
TIP131G
TIP132
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fw26025
Abstract: FW26025A fw26025a1 fw26025a1 equivalent MALAYSIA FW26025A1 parameters FW26025A1 st fw26025a1 fw26025a1 "transistor" transistor fw26025a1 ic 351
Text: FW26025A1 PNP POWER DARLINGTON TRANSISTOR • INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ DESCRIPTION The FW26025A1 is a silicon Epitaxial-Base PNP power transistor in monolithic Darlington
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FW26025A1
fw26025
FW26025A
fw26025a1 equivalent
MALAYSIA FW26025A1
parameters FW26025A1
st fw26025a1
fw26025a1 "transistor"
transistor fw26025a1
ic 351
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35N04G
Abstract: NJD35N04G
Text: NJD35N04G, NJVNJD35N04G, NJVNJD35N04T4G NPN Darlington Power Transistor This high voltage power Darlington has been specifically designed for inductive applications such as Electronic Ignition, Switching Regulators and Motor Control. Features •
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NJD35N04G,
NJVNJD35N04G,
NJVNJD35N04T4G
AEC-Q101
NJD35N04/D
35N04G
NJD35N04G
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Untitled
Abstract: No abstract text available
Text: BD777 Plastic Darlington Complementary Silicon Power Transistors Plastic Darlington complementary silicon power transistors designed for general purpose amplifier and high−speed switching applications. http://onsemi.com • High DC Current Gain • • •
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BD777
BD776
BD777,
BD780
BD777/D
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fw26025
Abstract: FW26025A FW26025A1 st fw26025a1 MALAYSIA FW26025A1 fw26025a1 "transistor" fw26025a1 equivalent transistor fw26025a1 parameters FW26025A1 P003F
Text: FW26025A1 PNP POWER DARLINGTON TRANSISTOR • INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ DESCRIPTION The FW26025A1 is a silicon Epitaxial-Base PNP power transistor in monolithic Darlington
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FW26025A1
FW26025A1
fw26025
FW26025A
st fw26025a1
MALAYSIA FW26025A1
fw26025a1 "transistor"
fw26025a1 equivalent
transistor fw26025a1
parameters FW26025A1
P003F
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