siemens igbt BSM 150 gb 100 d
Abstract: siemens igbt BSM 100 gb siemens igbt BSM 150 Gb 160 d siemens igbt BSM 50 gb 120 d siemens igbt BSM 300 siemens igbt chip siemens igbt BSM 100
Text: r i 3 r I i C f i l m i c v i t u r d o r U O I V e a I n v i u r ï D V J L -l n I o n r t K i o C - \J ^ IGBT Power Module • Haif-bridge ' • including fast free-wheeiing diodes 'jm • Package with insulated metai base piate VM4UJ0/3 Type ^CE Package
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C67076-A2105-A67
Oct-13-1995
Oct-13-1995
siemens igbt BSM 150 gb 100 d
siemens igbt BSM 100 gb
siemens igbt BSM 150 Gb 160 d
siemens igbt BSM 50 gb 120 d
siemens igbt BSM 300
siemens igbt chip
siemens igbt BSM 100
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ST02D-170F2
Abstract: AHA 500 ST02D-1 Zener Diode marking 3a DIODE CQ U180
Text: m n m ^ /u x Power-Clamper Surface M ount D evice m s Z e n e r Diode with F as t Recovery Diode • f t M U ! OUTLINE ST02D-170F2 170V 200W ftft ■H i Feature ■ Power Zener Diodes with FRD ■ SMD Package ■ Application for snubber circuit £ V\ 'T ¿5 V
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ST02D-170F2
wavefi50HzTiS
ST02D-170F2
AHA 500
ST02D-1
Zener Diode marking 3a
DIODE CQ
U180
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE 1N746A to 1N759A 2SE D bt.s3i3i aoi73ki? a • T -tt-O l I 400 mW ZENER DIODES Silicon planar diodes in DO-35 packages intended for use as low power voltage stabilizers or voltage references. The series consists of 14 types with nominal working voltages ranging from 3.3 to 12 V.
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1N746A
1N759A
aoi73ki?
DO-35
DO-35
1N746A
1N747A
1N748A
1N749A
1N750A
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ior e78996
Abstract: No abstract text available
Text: Bulletin 127403 rev. A 09/97 International i ö r Rectifier IRKDL450.S20 FAST DIODES s e r ie s SUPER MAGN-A-pak Power Modules Features • High power FAST recovery diode series ■ High current capability 460 A ■ 3000 V RMS isolating voltage with non-toxic substrate
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IRKDL450.
E78996
I27403
ior e78996
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Diode BA 163
Abstract: No abstract text available
Text: Zero Bias Detector Diodes Features • CAN BE USED WITHOUT EXTERNAL DC BIAS ■ EXHIBIT UNIFORM Rv CHARACTERISTICS ■ HIGH VOLTAGE SENSITIVITY ■ AVAILABLE IN PACKAGES, CHIPS AND BEAM LEADS Applications This family of Zero Bias Detector ZBD diodes is designed
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MA4E932A
Abstract: MA4E931C MA4E932B MA40186 MA40186B MA40186C MA40187D MA4E929 MA4E929A MA4E929B
Text: an A M P company Zero Bias Detector Diodes V 2.00 Features Case Styles • • • • sions Can Be Used Without External DC Bias Exhibit Uniform Rv Characteristics High Voltage Sensitivity Available in Packages, Chips and Beam Leads See appendix for complete dimen
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100Kb
MA4E932A
MA4E931C
MA4E932B
MA40186
MA40186B
MA40186C
MA40187D
MA4E929
MA4E929A
MA4E929B
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Mixer and Detector Diodes
Abstract: X-Band Motion Detector "zero-bias schottky diode" ST Low Forward Voltage Schottky Diode gold metal detectors VF-8Z microwave motion sensors balun diode mixer motion sensor doppler x band diode detector waveguide
Text: APPLICATION NOTE Mixer and Detector Diodes Surface Barrier Diodes Electrical Characteristics and Physics of Schottky Barriers Most people who use diodes are more familiar with junction devices than with the surface barrier diodes commonly used in mixer and detector circuits. In a junction diode the rectifying
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Silicon Point Contact Diode
Abstract: No abstract text available
Text: TYPICAL D.C. CHARACTERISTICS 36 37 1 Low barrier PDB 1 1 Ze o Bias P D B - 1 i Sta ndard GaAs Setlottky r .♦V ✓ 3 ^ ✓ l / • 4 ik \ " Standard GaAs \ Schottky \ I Low barrier PDB 2 " / X Zero Bia s PDB I 10 -20- ; Voltage N Current /mA 8 / Figure 10. Comparison of the l-V characteristics o f a 'zero bias' PDB diode, a low barrier PDB diode and a standard
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375GHz
DC1596)
OC1301)
-10dB
-20dB
35GHz
150pA.
Silicon Point Contact Diode
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U1020
Abstract: No abstract text available
Text: N AflER P H I L I P S / D I S C R E T E 25E D • bbS3T31 0032331 1 ■ bY32y SERIES A _ T -Q 3 -I7 FAST SOFT-RECOVERY RECTIFIER DIODES Glass-passivated double-diffused rectifier diodes in plastic envelopes, featuring fast reverse recovery times and non-snap-off characteristics. They are intended for use in chopper applications as well as in
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bbS3T31
bY32y
BY329â
BY329
bbS3ci31
T-03-17
U1020
bS3131
U1020
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Untitled
Abstract: No abstract text available
Text: SILICON PIN DIODES High voltage PIN diodes HIGH VOLTAGE PIN DIODES Applications Characteristics These devices are most often used to control Radio Frequency RF and microwave signals. Typically, high-voltage PIN diodes are found in high power switches and phase shifters.
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SH92103
SH91107
SH91207
SH90207
SH93103
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DH80154
Abstract: DH80080 DH80106 DH80051 DH80055 dh80102 BH200 DH80100 DH80120 SH93103
Text: SILICON PIN DIODES High voltage PIN diodes MICROWAVE HIGH VOLTAGE PIN DIODES Applications Characteristics These devices are most often used to control Radio Frequency RF and microwave signals. Typically, high-voltage PIN diodes are found in high power switches and phase shifters.
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SH92103
SH91107
SH91207
SH90207
SH93103
DH80154
DH80080
DH80106
DH80051
DH80055
dh80102
BH200
DH80100
DH80120
SH93103
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE TOD D bbS3T31 0010540 5 1N3909 to 1N3913 FAST SOFT-RECOVERY RECTIFIER DIODES Silicon diodes in DO—5 metal envelopes, featuring non-snap-off characteristics. They are intended for use in high-frequency power supplies, thyristor inverters and multi-phase power rectifier applications.
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bbS3T31
1N3909
1N3913
1N3910
1N3911
1N3912
1N3913.
1N3909
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Gunn Diode MA49156
Abstract: gunn diodes MA49156 MA49148 MA49000 gunn diode x band radar x-band gunn diode MA49508 MA49152 Gunn Diode e band
Text: an A M P company GaAs Gunn Diodes MA49000 V 2.00 Case Styles Features See appendix for complete dimensions • Low Noise Characteristics From 5 to 100 GHz • Catalog or Custom Tailored Diodes • Pulse or CW Operation Description The MA49000 series of Gallium Arsenide Gunn diodes is
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MA49000
MA49000
Gunn Diode MA49156
gunn diodes
MA49156
MA49148
gunn diode x band radar
x-band gunn diode
MA49508
MA49152
Gunn Diode e band
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BYW97G PH
Abstract: No abstract text available
Text: N AUER PHIL IPS /DI SCRE TE b b 5 3 c!31 0Q270bD 727 * A P X b^E D Philips Semiconductors Preliminary specification Fast soft-recovery avalanche rectifier diodes FEATURES • Non-snap-off soft- recovery switching characteristics BYW97F; BYW97G QUICK REFERENCE DATA
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bb53c
0Q270bD
BYW97F;
BYW97G
BYW97F
BYW97G PH
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bRE D ^ 5 3 ^ 3 1 D027D37 3MH « A P X Philips Semiconductors Preliminary specification Very fast soft-recovery avalanche rectifier diodes FEATURES • Non-snap-off soft- recovery switching characteristics • Capability of absorbing reverse
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D027D37
BYV36
BYV36A
BYV36B
BYV36C
BYV36E
BYV36F
BYV36G
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Untitled
Abstract: No abstract text available
Text: A jf e a m Stripline Packaged Silicon Schottky Mixer Diodes Features • LARGE CHOICE OF AVAILABLE PACKAGES ■ UNIFORM RF CHARACTERISTICS ■ SCREENING TO JANTXV LEVEL AVAILABLE ■ LOW, MEDIUM AND HIGH BARRIER
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/D ISCR ETE • E5E D bbS^Bl 0QEE3DS □ ■ BY229F SERIES T -0 3 -1 7 FAST SOFT-RECOVERY ELECTRICALLY ISOLATED RECTIFIER DIODES Glass-passivated, double-diffused rectifier diodes in full-pack plastic envelopes, featuring fast reverse recovery times and non-snap-off characteristics. Their electrical isolation makes them ideal for
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BY229F
BY229Fâ
LLS3T31
bt53131
QD2531S
002531b
T-03-17
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BYM26C PH
Abstract: No abstract text available
Text: b'lE D N AMER PHI LIPS/ DISCRE TE bb53^31 0D57Q1S 7fi3 BIAPX Philips Semiconductors Product specification Very fast soft-recovery avalanche rectifier diodes FEATURES • Non-snap-off soft- recovery switching characteristics • Capability of absorbing reverse
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0D57Q1S
BYM26
BYM26A
BYM26D
BYM26C
BYM26B
BYM26E
BYM26C PH
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40HF
Abstract: 40HFL 70HF 70HFL 85HF 85HFL
Text: T.HFL Series Vishay High Power Products Fast Recovery Diodes, 40/70/85 A T-Modules FEATURES • Fast recovery time characteristics RoHS • Electrically isolated base plate COMPLIANT • 3500 VRMS isolating voltage • Standard JEDEC package • Simplified mechanical designs, rapid assembly
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E78996
18-Jul-08
40HF
40HFL
70HF
70HFL
85HF
85HFL
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byv26c ph
Abstract: philips diode PH 15
Text: N AUER PHILIPS/DISCRETE 1,^53131 QDS7Q2b SbT • APX b^E » Philips Semiconductors Preliminary specification Very fast soft-recovery avalanche rectifier diodes FEATURES • Non-snap-off soft- recovery switching characteristics • Capability of absorbing reverse
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BYV26
BYV26A
BYV26C
BYV26D
BYV26B
BYV26E
byv26c ph
philips diode PH 15
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S305
Abstract: L240
Text: VSKDL240, VSKCL240, VSKJL240, VSKEL240 Series Vishay Semiconductors Fast Recovery Diodes, 250 A MAGN-A-PAK Power Modules FEATURES • Fast recovery time characteristics • Electrically isolated base plate • Industrial standard package • Simplified mechanical designs, rapid assembly
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VSKDL240,
VSKCL240,
VSKJL240,
VSKEL240
E78996
2002/95/EC
11-Mar-11
S305
L240
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Untitled
Abstract: No abstract text available
Text: VSKDL240, VSKCL240, VSKJL240, VSKEL240 Series Vishay Semiconductors Fast Recovery Diodes, 250 A MAGN-A-PAK Power Modules FEATURES • Fast recovery time characteristics • Electrically isolated base plate • Industrial standard package • Simplified mechanical designs, rapid assembly
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VSKDL240,
VSKCL240,
VSKJL240,
VSKEL240
E78996
2002/95/EC
11-Mar-11
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AN599
Abstract: 100C BY255 BYT261 BYT60P BYV255 BYW51
Text: APPLICATION NOTE PARALLEL OPERATION OF POWER RECTIFIERS B. Rivet INTRODUCTION I - QUALITATIVE ANALYSIS AND LIMITATIONS In parallel operation of several diodes, the current is not split into equal parts because of differences between forward characteristics.
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE _ L l_ TDD D bb53T31 001,03TM T • BYV60 SERIES t:o2->7 FAST SOFT-RECOVERY RECTIFIER DIODES Glass-passivated double-diffused rectifier diodes in TO-238 envelope, featuring fast reverse recovery times with soft recovery characteristics.
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bb53T31
BYV60
O-238
BVV60â
bbS3T31
00103TT
bS3T31
0D104D0
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